KR101867250B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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KR101867250B1
KR101867250B1 KR1020177019849A KR20177019849A KR101867250B1 KR 101867250 B1 KR101867250 B1 KR 101867250B1 KR 1020177019849 A KR1020177019849 A KR 1020177019849A KR 20177019849 A KR20177019849 A KR 20177019849A KR 101867250 B1 KR101867250 B1 KR 101867250B1
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substrate
nozzle
liquid
nozzles
treatment liquid
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KR20170087524A (ko
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고노스케 하야시
다카시 오오타가키
유지 나가시마
아키노리 이소
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H01L21/304—
    • H01L21/306—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020177019849A 2013-03-29 2014-03-25 기판 처리 장치 및 기판 처리 방법 Active KR101867250B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-073877 2013-03-29
JP2013073877 2013-03-29
JP2014060462A JP6203098B2 (ja) 2013-03-29 2014-03-24 基板処理装置及び基板処理方法
JPJP-P-2014-060462 2014-03-24
PCT/JP2014/058241 WO2014157180A1 (ja) 2013-03-29 2014-03-25 基板処理装置及び基板処理方法

Related Parent Applications (1)

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KR1020157024852A Division KR101762054B1 (ko) 2013-03-29 2014-03-25 기판 처리 장치 및 기판 처리 방법

Publications (2)

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KR20170087524A KR20170087524A (ko) 2017-07-28
KR101867250B1 true KR101867250B1 (ko) 2018-06-12

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KR1020177019849A Active KR101867250B1 (ko) 2013-03-29 2014-03-25 기판 처리 장치 및 기판 처리 방법
KR1020157024852A Active KR101762054B1 (ko) 2013-03-29 2014-03-25 기판 처리 장치 및 기판 처리 방법

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Country Status (7)

Country Link
US (1) US10325787B2 (https=)
EP (1) EP2980833A4 (https=)
JP (1) JP6203098B2 (https=)
KR (2) KR101867250B1 (https=)
CN (1) CN105103268B (https=)
TW (1) TWI508138B (https=)
WO (1) WO2014157180A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20220073724A (ko) * 2015-02-18 2022-06-03 가부시키가이샤 스크린 홀딩스 기판 처리 장치

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JP6478692B2 (ja) * 2015-02-18 2019-03-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6361071B2 (ja) * 2015-02-25 2018-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN109037111B (zh) 2015-02-25 2022-03-22 株式会社思可林集团 基板处理装置
JP6517113B2 (ja) * 2015-08-28 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド
JP6563762B2 (ja) * 2015-09-29 2019-08-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR20180013327A (ko) * 2016-07-29 2018-02-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN106065495B (zh) * 2016-08-17 2018-10-23 上海大族新能源科技有限公司 扩散源涂覆装置
KR101870650B1 (ko) 2016-08-25 2018-06-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6814653B2 (ja) * 2017-02-09 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6842952B2 (ja) * 2017-02-28 2021-03-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7040871B2 (ja) * 2017-07-28 2022-03-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理装置の部品検査方法
JP7202106B2 (ja) * 2018-08-31 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102174065B1 (ko) * 2018-12-28 2020-11-04 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN112233996A (zh) * 2019-07-15 2021-01-15 长鑫存储技术有限公司 晶圆清洗装置、晶圆处理设备及晶圆清洗方法
JP7344720B2 (ja) * 2019-09-03 2023-09-14 東京エレクトロン株式会社 基板処理方法、記憶媒体、及び基板処理装置
JP2021077702A (ja) * 2019-11-06 2021-05-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7408421B2 (ja) * 2020-01-30 2024-01-05 株式会社Ｓｃｒｅｅｎホールディングス 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置
JP7093390B2 (ja) * 2020-10-15 2022-06-29 株式会社荏原製作所 基板洗浄装置
JP7710880B2 (ja) * 2021-04-27 2025-07-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US12285837B2 (en) * 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same
KR102811418B1 (ko) 2021-11-30 2025-05-26 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
TW202406634A (zh) * 2022-04-28 2024-02-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR20240016644A (ko) 2022-07-29 2024-02-06 세메스 주식회사 기판처리장치 및 기판처리방법
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
US12512335B2 (en) * 2022-09-21 2025-12-30 Kioxia Corporation Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device
GB202315890D0 (en) * 2023-10-17 2023-11-29 Lam Res Ag Apparatus for processing a wafer

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KR20030065412A (ko) * 2002-01-30 2003-08-06 가부시끼가이샤 도시바 성막 방법, 성막 장치, 패턴 형성 방법, 및 반도체 장치의제조 방법
JP2004237157A (ja) * 2003-02-04 2004-08-26 Matsushita Electric Ind Co Ltd 回転塗布装置
KR20090028414A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 소쿠도 기판처리장치 및 기판처리방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220073724A (ko) * 2015-02-18 2022-06-03 가부시키가이샤 스크린 홀딩스 기판 처리 장치
KR102502045B1 (ko) 2015-02-18 2023-02-20 가부시키가이샤 스크린 홀딩스 기판 처리 장치

Also Published As

Publication number Publication date
KR20170087524A (ko) 2017-07-28
JP6203098B2 (ja) 2017-09-27
EP2980833A4 (en) 2016-08-10
US20160071746A1 (en) 2016-03-10
KR101762054B1 (ko) 2017-07-26
CN105103268A (zh) 2015-11-25
WO2014157180A1 (ja) 2014-10-02
CN105103268B (zh) 2017-11-17
TW201508815A (zh) 2015-03-01
EP2980833A1 (en) 2016-02-03
TWI508138B (zh) 2015-11-11
JP2014209605A (ja) 2014-11-06
US10325787B2 (en) 2019-06-18
KR20150119186A (ko) 2015-10-23

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