KR101857323B1 - 패턴 형성 방법, 패턴 형성 장치 및 컴퓨터 판독 가능 기억 매체 - Google Patents

패턴 형성 방법, 패턴 형성 장치 및 컴퓨터 판독 가능 기억 매체 Download PDF

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KR101857323B1
KR101857323B1 KR1020147027564A KR20147027564A KR101857323B1 KR 101857323 B1 KR101857323 B1 KR 101857323B1 KR 1020147027564 A KR1020147027564 A KR 1020147027564A KR 20147027564 A KR20147027564 A KR 20147027564A KR 101857323 B1 KR101857323 B1 KR 101857323B1
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film
block copolymer
ultraviolet light
pattern forming
inert gas
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KR20150007279A (ko
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마코토 무라마츠
다카히로 기타노
다다토시 도미타
게이지 다노우치
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020147027564A 2012-04-06 2013-03-28 패턴 형성 방법, 패턴 형성 장치 및 컴퓨터 판독 가능 기억 매체 Active KR101857323B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-087106 2012-04-06
JP2012087106 2012-04-06
JP2012285132A JP5918122B2 (ja) 2012-04-06 2012-12-27 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体
JPJP-P-2012-285132 2012-12-27
PCT/JP2013/059264 WO2013150955A1 (ja) 2012-04-06 2013-03-28 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体

Publications (2)

Publication Number Publication Date
KR20150007279A KR20150007279A (ko) 2015-01-20
KR101857323B1 true KR101857323B1 (ko) 2018-05-11

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US (1) US9618849B2 (https=)
JP (1) JP5918122B2 (https=)
KR (1) KR101857323B1 (https=)
TW (1) TWI538745B (https=)
WO (1) WO2013150955A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140273290A1 (en) * 2013-03-15 2014-09-18 Tokyo Electron Limited Solvent anneal processing for directed-self assembly applications
JP5783472B2 (ja) * 2013-06-10 2015-09-24 ウシオ電機株式会社 アッシング装置
TWI562239B (en) * 2013-11-07 2016-12-11 Tokyo Electron Ltd Pattern forming method and heating device
KR102066301B1 (ko) * 2013-11-25 2020-01-14 도쿄엘렉트론가부시키가이샤 패턴 형성 방법 및 가열 장치
JP6235974B2 (ja) 2014-09-24 2017-11-22 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6314779B2 (ja) 2014-10-01 2018-04-25 東京エレクトロン株式会社 液処理方法、記憶媒体及び液処理装置
JP6543064B2 (ja) 2015-03-25 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP6495707B2 (ja) * 2015-03-25 2019-04-03 株式会社Ｓｃｒｅｅｎホールディングス 露光装置および基板処理装置
TWI723052B (zh) 2015-10-23 2021-04-01 日商東京威力科創股份有限公司 基板處理方法、程式及電腦記憶媒體
JP6655418B2 (ja) 2016-02-17 2020-02-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JPWO2017221683A1 (ja) * 2016-06-24 2019-04-04 東京エレクトロン株式会社 基板処理方法、読み取り可能なコンピュータ記憶媒体及び基板処理システム
JP6802667B2 (ja) 2016-08-18 2020-12-16 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置、基板処理装置、熱処理方法および基板処理方法
JP6773495B2 (ja) 2016-09-15 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置、基板処理装置、エッチング方法および基板処理方法
JP6683578B2 (ja) 2016-09-23 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6811638B2 (ja) 2017-02-14 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及びその装置
EP3528045A1 (en) 2018-02-16 2019-08-21 IMEC vzw Method for forming a cross-linked layer
CN109569970A (zh) * 2018-12-26 2019-04-05 江苏荣成环保科技股份有限公司 一种单面瓦楞机胶桶加热保温装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324393A (ja) 2006-06-01 2007-12-13 Tokyo Electron Ltd 塗布膜形成装置および溶剤供給方法
WO2011039847A1 (ja) 2009-09-29 2011-04-07 株式会社 東芝 パターン形成方法
WO2012111694A1 (ja) 2011-02-15 2012-08-23 独立行政法人理化学研究所 ナノ構造体を表面に備える基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP4127682B2 (ja) 1999-06-07 2008-07-30 株式会社東芝 パターン形成方法
JP2001113163A (ja) * 1999-10-20 2001-04-24 Hoya Schott Kk 紫外光照射装置及び方法
JP2005142185A (ja) * 2003-11-04 2005-06-02 Canon Inc 露光装置及びその環境制御方法
US20060210929A1 (en) * 2005-03-15 2006-09-21 Canon Kabushiki Kaisha Photosensitive composition and forming process of structured material using the composition
JP4665720B2 (ja) 2005-11-01 2011-04-06 株式会社日立製作所 パターン基板，パターン基板の製造方法、微細金型および磁気記録用パターン媒体
JP5300799B2 (ja) * 2010-07-28 2013-09-25 株式会社東芝 パターン形成方法及びポリマーアロイ下地材料
JP5484373B2 (ja) * 2011-02-14 2014-05-07 東京エレクトロン株式会社 パターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324393A (ja) 2006-06-01 2007-12-13 Tokyo Electron Ltd 塗布膜形成装置および溶剤供給方法
WO2011039847A1 (ja) 2009-09-29 2011-04-07 株式会社 東芝 パターン形成方法
WO2012111694A1 (ja) 2011-02-15 2012-08-23 独立行政法人理化学研究所 ナノ構造体を表面に備える基板の製造方法
US20130313223A1 (en) 2011-02-15 2013-11-28 Tokyo Ohka Kogyo Co., Ltd. Method for producing substrate having surface nanostructure

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US9618849B2 (en) 2017-04-11
JP2013232621A (ja) 2013-11-14
US20150062545A1 (en) 2015-03-05
JP5918122B2 (ja) 2016-05-18
TW201410336A (zh) 2014-03-16
KR20150007279A (ko) 2015-01-20
TWI538745B (zh) 2016-06-21
WO2013150955A1 (ja) 2013-10-10

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