KR101849638B1 - 습식-박리성 실리콘-함유 반사방지제 - Google Patents

습식-박리성 실리콘-함유 반사방지제 Download PDF

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KR101849638B1
KR101849638B1 KR1020160068651A KR20160068651A KR101849638B1 KR 101849638 B1 KR101849638 B1 KR 101849638B1 KR 1020160068651 A KR1020160068651 A KR 1020160068651A KR 20160068651 A KR20160068651 A KR 20160068651A KR 101849638 B1 KR101849638 B1 KR 101849638B1
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siloxane
polymer
layer
dihydrofuran
formula
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KR20160147652A (ko
Inventor
오웬디 온가위
샬롯 커틀러
밍키 리
신타로 야마다
제임스 카메론
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롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020160068651A 2015-06-15 2016-06-02 습식-박리성 실리콘-함유 반사방지제 Expired - Fee Related KR101849638B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/739,402 2015-06-15
US14/739,402 US9442377B1 (en) 2015-06-15 2015-06-15 Wet-strippable silicon-containing antireflectant

Publications (2)

Publication Number Publication Date
KR20160147652A KR20160147652A (ko) 2016-12-23
KR101849638B1 true KR101849638B1 (ko) 2018-04-17

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US (2) US9442377B1 (enExample)
JP (2) JP2017020000A (enExample)
KR (1) KR101849638B1 (enExample)
CN (1) CN106243357B (enExample)
TW (1) TWI600724B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102439087B1 (ko) * 2014-11-19 2022-09-01 닛산 가가쿠 가부시키가이샤 습식제거가 가능한 실리콘함유 레지스트 하층막 형성 조성물
US10528945B1 (en) 2015-03-31 2020-01-07 Square, Inc. Open ticket payment handling with incremental authorization
US10043162B1 (en) 2015-03-31 2018-08-07 Square, Inc. Open ticket payment handling with bill splitting
US10658191B2 (en) * 2015-09-04 2020-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal middle layer for a lithography process
US10410883B2 (en) * 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10311420B1 (en) 2016-06-17 2019-06-04 Square, Inc. Synchronizing open ticket functionality with kitchen display systems
US10580062B1 (en) * 2016-06-28 2020-03-03 Square, Inc. Integrating predefined templates with open ticket functionality
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US11506979B2 (en) * 2016-12-14 2022-11-22 Rohm And Haas Electronic Materials Llc Method using silicon-containing underlayers
US20180164685A1 (en) * 2016-12-14 2018-06-14 Rohm And Haas Electronic Materials Llc Method using silicon-containing underlayers
WO2018181989A1 (ja) * 2017-03-31 2018-10-04 日産化学株式会社 カルボニル構造を有するシリコン含有レジスト下層膜形成組成物
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
KR102674631B1 (ko) 2017-07-06 2024-06-12 닛산 가가쿠 가부시키가이샤 알칼리성 현상액 가용성 실리콘함유 레지스트 하층막 형성 조성물
US11360387B2 (en) * 2017-08-04 2022-06-14 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US10761423B2 (en) * 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
US10943311B1 (en) 2017-09-29 2021-03-09 Square, Inc. Order fulfillment and tracking systems and methods
US20190146343A1 (en) 2017-11-10 2019-05-16 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11138680B1 (en) 2018-11-21 2021-10-05 Square, Inc. Updating menus based on predicted efficiencies
US10915905B1 (en) 2018-12-13 2021-02-09 Square, Inc. Batch-processing transactions in response to an event
JP7534720B2 (ja) * 2019-03-28 2024-08-15 日産化学株式会社 膜形成用組成物
JP7342953B2 (ja) * 2019-07-29 2023-09-12 Jsr株式会社 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法
US11817317B2 (en) 2019-10-24 2023-11-14 Brewer Science, Inc. High-silicon-content wet-removable planarizing layer
JP7637070B2 (ja) * 2020-01-15 2025-02-27 株式会社カネカ 樹脂組成物、その製造方法、及び、多液型硬化性樹脂組成物
KR20220162140A (ko) * 2020-03-31 2022-12-07 닛산 가가쿠 가부시키가이샤 막 형성용 조성물
KR20230003058A (ko) * 2020-04-30 2023-01-05 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010039051A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
US20140186774A1 (en) 2013-01-03 2014-07-03 International Business Machines Corporation Acid-strippable silicon-containing antireflective coating

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03100021A (ja) * 1989-09-14 1991-04-25 Nippon Telegr & Teleph Corp <Ntt> ポリシロキサン
JP4096138B2 (ja) 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
JP3951124B2 (ja) 2002-12-06 2007-08-01 Ｊｓｒ株式会社 絶縁膜
DE602004009791T2 (de) 2003-05-23 2008-10-30 Dow Corning Corp., Midland Siloxan-harz basierte anti-reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
US7270887B2 (en) 2004-10-13 2007-09-18 Shin-Etsu Chemical Co., Ltd. Antireflective coating, coating composition, and antireflective coated article
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
US7678529B2 (en) 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
JP5110283B2 (ja) 2005-12-06 2012-12-26 日産化学工業株式会社 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物
JP4421566B2 (ja) 2005-12-26 2010-02-24 チェイル インダストリーズ インコーポレイテッド フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
EP2121808A1 (en) * 2007-02-27 2009-11-25 AZ Electronic Materials USA Corp. Silicon-based antifrelective coating compositions
JP5078475B2 (ja) * 2007-07-11 2012-11-21 旭化成イーマテリアルズ株式会社 ポリオルガノシロキサン
JP2009265595A (ja) * 2007-09-07 2009-11-12 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
JP5369553B2 (ja) * 2007-09-07 2013-12-18 東レ株式会社 シロキサン樹脂組成物、硬化物およびこれを用いた光半導体
US8304161B2 (en) * 2008-03-04 2012-11-06 Dow Corning Corporation Silsesquioxane resins
JP2010039056A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
US7955782B2 (en) 2008-09-22 2011-06-07 Honeywell International Inc. Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
EP2373722A4 (en) 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
WO2010071155A1 (ja) 2008-12-19 2010-06-24 日産化学工業株式会社 アニオン基を有するシリコン含有レジスト下層膜形成組成物
US9217921B2 (en) 2009-06-02 2015-12-22 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having sulfide bond
JP5534250B2 (ja) 2009-09-16 2014-06-25 日産化学工業株式会社 スルホンアミド基を有するシリコン含有レジスト下層膜形成組成物
TWI432895B (zh) * 2010-12-01 2014-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其所形成之基材保護膜
JP5785121B2 (ja) 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法
TWI470352B (zh) 2011-08-31 2015-01-21 Asahi Kasei E Materials Corp A photosensitive alkali-soluble polysiloxane resin composition
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
TWI432898B (zh) 2011-12-05 2014-04-01 Chi Mei Corp 彩色濾光片用藍色感光性樹脂組成物及其應用
WO2014080908A1 (ja) * 2012-11-26 2014-05-30 東レ株式会社 ネガ型感光性樹脂組成物
WO2014126013A1 (ja) * 2013-02-14 2014-08-21 東レ株式会社 ネガ型感光性着色組成物、硬化膜、タッチパネル用遮光パターン及びタッチパネルの製造方法
JP5830044B2 (ja) 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
TWI490653B (zh) 2013-09-10 2015-07-01 Chi Mei Corp 正型感光性樹脂組成物及其圖案形成方法
WO2016052268A1 (ja) * 2014-09-30 2016-04-07 東レ株式会社 感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010039051A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
US20140186774A1 (en) 2013-01-03 2014-07-03 International Business Machines Corporation Acid-strippable silicon-containing antireflective coating

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