KR101827020B1 - 고애스펙트비 나노구조들의 패턴 붕괴를 저감시키는 방법 - Google Patents

고애스펙트비 나노구조들의 패턴 붕괴를 저감시키는 방법 Download PDF

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KR101827020B1
KR101827020B1 KR1020127019911A KR20127019911A KR101827020B1 KR 101827020 B1 KR101827020 B1 KR 101827020B1 KR 1020127019911 A KR1020127019911 A KR 1020127019911A KR 20127019911 A KR20127019911 A KR 20127019911A KR 101827020 B1 KR101827020 B1 KR 101827020B1
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wafer
high aspect
features
aspect ratio
primer
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KR20120116457A (ko
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아미르 에이 야세리
지 주
석민 윤
데이비드 에스 엘 무이
카트리나 미하일리첸코
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127019911A 2010-02-01 2011-01-21 고애스펙트비 나노구조들의 패턴 붕괴를 저감시키는 방법 Expired - Fee Related KR101827020B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/697,862 2010-02-01
US12/697,862 US8617993B2 (en) 2010-02-01 2010-02-01 Method of reducing pattern collapse in high aspect ratio nanostructures
PCT/US2011/022075 WO2011094132A2 (en) 2010-02-01 2011-01-21 Method of reducing pattern collapse in high aspect ratio nanostructures

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KR20120116457A KR20120116457A (ko) 2012-10-22
KR101827020B1 true KR101827020B1 (ko) 2018-03-22

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US (1) US8617993B2 (enExample)
JP (1) JP5805105B2 (enExample)
KR (1) KR101827020B1 (enExample)
CN (1) CN102741984B (enExample)
SG (1) SG182670A1 (enExample)
TW (1) TWI571925B (enExample)
WO (1) WO2011094132A2 (enExample)

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WO2021231307A1 (en) * 2020-05-12 2021-11-18 Lam Research Corporation Controlled degradation of a stimuli-responsive polymer film
US12119218B2 (en) 2019-01-29 2024-10-15 Lam Research Corporation Sacrificial protection layer for environmentally sensitive surfaces of substrates
US12322588B2 (en) 2019-09-04 2025-06-03 Lam Research Corporation Stimulus responsive polymer films and formulations

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440573B2 (en) * 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
US8932933B2 (en) * 2012-05-04 2015-01-13 Micron Technology, Inc. Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures
US9520459B2 (en) * 2012-12-21 2016-12-13 SK Hynix Inc. Surface treatment method for semiconductor device
KR102084073B1 (ko) * 2012-12-21 2020-03-04 에스케이하이닉스 주식회사 반도체 장치의 표면 처리 방법
US9666427B2 (en) * 2013-06-21 2017-05-30 Lam Research Corporation Method of collapse-free drying of high aspect ratio structures
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
KR101529528B1 (ko) * 2014-01-06 2015-06-18 한국과학기술연구원 저반사성 초소수 또는 초발수 유리 및 그 제조방법
JP6304592B2 (ja) 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
EP2980014B1 (en) 2014-07-31 2019-06-26 IMEC vzw Method for interconnected nanowire cluster formation using an Anodic Aluminium Oxide (AAO) template
US9466511B2 (en) 2014-09-18 2016-10-11 Lam Research Corporation Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material
US10068781B2 (en) 2014-10-06 2018-09-04 Lam Research Corporation Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma
US10008396B2 (en) 2014-10-06 2018-06-26 Lam Research Corporation Method for collapse-free drying of high aspect ratio structures
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
JP6441176B2 (ja) * 2015-07-10 2018-12-19 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
US9653307B1 (en) 2016-07-14 2017-05-16 Micron Technology, Inc. Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures
US10446416B2 (en) * 2016-08-09 2019-10-15 Lam Research Ag Method and apparatus for processing wafer-shaped articles
US10748757B2 (en) 2017-09-21 2020-08-18 Honeywell International, Inc. Thermally removable fill materials for anti-stiction applications
US10727044B2 (en) * 2017-09-21 2020-07-28 Honeywell International Inc. Fill material to mitigate pattern collapse
US10954480B2 (en) 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
KR102891364B1 (ko) 2017-10-23 2025-11-25 램 리서치 아게 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들
US10957530B2 (en) 2017-12-19 2021-03-23 Micron Technology, Inc. Freezing a sacrificial material in forming a semiconductor
US10964525B2 (en) 2017-12-19 2021-03-30 Micron Technology, Inc. Removing a sacrificial material via sublimation in forming a semiconductor
US11037779B2 (en) 2017-12-19 2021-06-15 Micron Technology, Inc. Gas residue removal
US10475656B2 (en) 2017-12-19 2019-11-12 Micron Technology, Inc. Hydrosilylation in semiconductor processing
US10784101B2 (en) 2017-12-19 2020-09-22 Micron Technology, Inc. Using sacrificial solids in semiconductor processing
US10497558B2 (en) 2018-02-26 2019-12-03 Micron Technology, Inc. Using sacrificial polymer materials in semiconductor processing
KR20190138743A (ko) * 2018-06-06 2019-12-16 도오꾜오까고오교 가부시끼가이샤 기판의 처리 방법 및 린스액
WO2020046706A1 (en) * 2018-08-31 2020-03-05 Honeywell International Inc. Water soluble polymers for pattern collapse mitigation
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
US10886166B2 (en) 2019-03-08 2021-01-05 International Business Machines Corporation Dielectric surface modification in sub-40nm pitch interconnect patterning
CN113394074A (zh) * 2020-03-11 2021-09-14 长鑫存储技术有限公司 半导体结构的处理方法
CN113495675B (zh) 2020-04-01 2023-08-11 长鑫存储技术有限公司 读写方法及存储器装置
CN113497142B (zh) * 2020-04-01 2024-04-19 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法
CN113889404B (zh) * 2020-07-02 2024-07-05 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
JP7411818B2 (ja) * 2020-07-02 2024-01-11 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造の処理方法及び形成方法
CN113889405B (zh) * 2020-07-02 2024-07-05 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
US11715634B2 (en) * 2021-04-28 2023-08-01 Nanya Technology Corporation Wet clean process for fabricating semiconductor devices
TW202338913A (zh) * 2021-09-27 2023-10-01 美商蘭姆研究公司 使用刺激響應聚合物的犧牲性支撐、表面保護及等候時間管理用之方法及配方
JP2023087228A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 ガス処理方法およびガス処理装置
US12341054B2 (en) * 2022-03-30 2025-06-24 Nanya Technology Corporation Method for fabricating semiconductor device with chelating agent
JP2023174253A (ja) * 2022-05-27 2023-12-07 株式会社ジャパンディスプレイ 表示装置の製造方法及びｃｖｄ装置
JP7614273B1 (ja) * 2023-08-28 2025-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196879A (ja) * 2004-12-17 2006-07-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621022A (ja) * 1992-06-30 1994-01-28 Mitsubishi Electric Corp 半導体装置の製造方法
JP3253851B2 (ja) * 1996-04-18 2002-02-04 株式会社日立製作所 超撥水塗料及びそれを用いた超撥水塗膜
JPH11312665A (ja) * 1998-04-27 1999-11-09 Kyocera Corp 半導体基板の粗面化法
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6782027B2 (en) * 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
KR100393118B1 (ko) * 2001-02-22 2003-07-31 현만석 반도체 소자의 레지스트 패턴 형성 방법 및 이 방법에서 사용되는 반도체 웨이퍼 세척액
US6605413B1 (en) * 2001-03-29 2003-08-12 Advanced Micro Devices, Inc. Chemical treatment to strengthen photoresists to prevent pattern collapse
US6849389B2 (en) * 2001-07-12 2005-02-01 International Business Machines Corporation Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmas
US6513996B1 (en) * 2002-01-16 2003-02-04 Advanced Micro Devices, Inc. Integrated equipment to drain water-hexane developer for pattern collapse
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
DE10307523B4 (de) * 2003-02-21 2005-11-17 Infineon Technologies Ag Verfahren zur Herstellung einer Resistmaske für die Strukturierung von Halbleitersubstraten
US9236279B2 (en) * 2003-06-27 2016-01-12 Lam Research Corporation Method of dielectric film treatment
JP2005115171A (ja) * 2003-10-09 2005-04-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
US7008866B2 (en) * 2003-12-17 2006-03-07 Taiwan Semiconductor Manufacturing Co Ltd. Large-scale trimming for ultra-narrow gates
US7229936B2 (en) * 2004-05-03 2007-06-12 International Business Machines Corporation Method to reduce photoresist pattern collapse by controlled surface microroughening
US7611825B2 (en) * 2004-09-15 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography method to prevent photoresist pattern collapse
EP1726609A1 (en) * 2005-05-25 2006-11-29 DSM IP Assets B.V. Hydrophobic coating
US7776754B2 (en) * 2005-10-11 2010-08-17 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
US20070254169A1 (en) * 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
JP2009094183A (ja) * 2007-10-05 2009-04-30 Nec Electronics Corp 疎水化多孔質膜の製造方法
JP5114252B2 (ja) * 2008-03-06 2013-01-09 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US20090236627A1 (en) * 2008-03-19 2009-09-24 Jang-Sub Kim Method of forming metal wiring
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
US7892937B2 (en) * 2008-10-16 2011-02-22 Micron Technology, Inc. Methods of forming capacitors
US20100122711A1 (en) * 2008-11-14 2010-05-20 Advanced Micro Devices, Inc. wet clean method for semiconductor device fabrication processes
JP5206622B2 (ja) * 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
JP4743340B1 (ja) * 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196879A (ja) * 2004-12-17 2006-07-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12119218B2 (en) 2019-01-29 2024-10-15 Lam Research Corporation Sacrificial protection layer for environmentally sensitive surfaces of substrates
US12322588B2 (en) 2019-09-04 2025-06-03 Lam Research Corporation Stimulus responsive polymer films and formulations
WO2021231307A1 (en) * 2020-05-12 2021-11-18 Lam Research Corporation Controlled degradation of a stimuli-responsive polymer film
KR20230004895A (ko) * 2020-05-12 2023-01-06 램 리써치 코포레이션 자극-반응성 폴리머 막의 제어된 열화
US11862473B2 (en) 2020-05-12 2024-01-02 Lam Research Corporation Controlled degradation of a stimuli-responsive polymer film
KR102665933B1 (ko) 2020-05-12 2024-05-20 램 리써치 코포레이션 자극-반응성 폴리머 막의 제어된 열화

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WO2011094132A2 (en) 2011-08-04
JP2013519217A (ja) 2013-05-23
US20110189858A1 (en) 2011-08-04
JP5805105B2 (ja) 2015-11-04
TWI571925B (zh) 2017-02-21
KR20120116457A (ko) 2012-10-22
CN102741984A (zh) 2012-10-17
US8617993B2 (en) 2013-12-31
CN102741984B (zh) 2015-05-13
SG182670A1 (en) 2012-08-30
TW201140682A (en) 2011-11-16
WO2011094132A3 (en) 2011-10-13

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