CN102741984B - 在高深宽比纳米结构中减少图案塌陷的方法 - Google Patents

在高深宽比纳米结构中减少图案塌陷的方法 Download PDF

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Publication number
CN102741984B
CN102741984B CN201180007817.6A CN201180007817A CN102741984B CN 102741984 B CN102741984 B CN 102741984B CN 201180007817 A CN201180007817 A CN 201180007817A CN 102741984 B CN102741984 B CN 102741984B
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wafer
aspect ratio
high aspect
primer
ratio features
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CN102741984A (zh
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阿米尔·A·亚西尔
朱继
尹石民
戴维·S·L·梅
卡特里娜·米哈利钦科
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
CN201180007817.6A 2010-02-01 2011-01-21 在高深宽比纳米结构中减少图案塌陷的方法 Active CN102741984B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/697,862 2010-02-01
US12/697,862 US8617993B2 (en) 2010-02-01 2010-02-01 Method of reducing pattern collapse in high aspect ratio nanostructures
PCT/US2011/022075 WO2011094132A2 (en) 2010-02-01 2011-01-21 Method of reducing pattern collapse in high aspect ratio nanostructures

Publications (2)

Publication Number Publication Date
CN102741984A CN102741984A (zh) 2012-10-17
CN102741984B true CN102741984B (zh) 2015-05-13

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Country Link
US (1) US8617993B2 (enExample)
JP (1) JP5805105B2 (enExample)
KR (1) KR101827020B1 (enExample)
CN (1) CN102741984B (enExample)
SG (1) SG182670A1 (enExample)
TW (1) TWI571925B (enExample)
WO (1) WO2011094132A2 (enExample)

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Also Published As

Publication number Publication date
WO2011094132A2 (en) 2011-08-04
JP2013519217A (ja) 2013-05-23
US20110189858A1 (en) 2011-08-04
JP5805105B2 (ja) 2015-11-04
TWI571925B (zh) 2017-02-21
KR20120116457A (ko) 2012-10-22
KR101827020B1 (ko) 2018-03-22
CN102741984A (zh) 2012-10-17
US8617993B2 (en) 2013-12-31
SG182670A1 (en) 2012-08-30
TW201140682A (en) 2011-11-16
WO2011094132A3 (en) 2011-10-13

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