JP5805105B2 - 高アスペクト比ナノ構造におけるパターン崩壊の低減方法 - Google Patents
高アスペクト比ナノ構造におけるパターン崩壊の低減方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Description
本発明は、たとえば、以下のような態様で実現することもできる。
適用例1:
半導体デバイス製造に用いられるウエハを処理する方法であって、
前記ウエハ上のシリコン系層に高アスペクト比フィーチャを形成する工程と、
前記フィーチャの側壁の疎水性を高める工程と、
前記ウエハの湿式処理を実行する工程と、
その後に前記ウエハを乾燥させる工程と、
を備える、方法。
適用例2:
適用例1の方法であって、前記フィーチャの前記側壁の疎水性を高める工程は、前記ウエハ上にプライマを堆積させることによって達成され、前記プライマは、前記フィーチャの表面を化学変化させることによって前記側壁の疎水性を高める、方法。
適用例3:
適用例2の方法であって、前記プライマは、前記ウエハの湿式処理を実行する工程の前に蒸着によって前記ウエハ上に堆積される、方法。
適用例4:
適用例3の方法であって、前記湿式処理の前に前記ウエハ上に前記プライマを堆積させる工程は、
0.1〜50重量%のC 8 F 13 H 4 SiCl 3 (FOTS)の溶液を無水n−ヘキサンと混合することによってプライマ溶液を生成する工程と、
前記プライマ溶液が蒸発し、前記FOTS分子が前記ナノ構造の前記側壁と反応するように、前記プライマ溶液の一部を前記ウエハと共加熱する工程と、
を含む、方法。
適用例5:
適用例2の方法であって、前記プライマは、前記ウエハの前記湿式処理中に液相成長によって前記ウエハ上に堆積される、方法。
適用例6:
適用例5の方法であって、前記ウエハの湿式処理を実行する工程は、前記湿式処理中に前記ウエハ上に前記プライマを堆積させる工程の後に前記ウエハをリンスする工程を含む、方法。
適用例7:
適用例2の方法であって、前記プライマは、自己集合単分子層を含む、方法。
適用例8:
適用例2の方法であって、前記プライマは薄膜を含み、前記薄膜は、ヘキサメチルジシロキサン、アルコキシシラン、または、アルキルシランのうちの少なくとも1つを含む、方法。
適用例9:
適用例1の方法であって、前記側壁の疎水性を高める工程は、前記側壁を粗面化することによって達成される、方法。
適用例10:
適用例9の方法であって、前記側壁の前記粗面化は、重合プラズマ、フッ化水素蒸気、または、フッ化物を用いたプラズマエッチングのうちの少なくとも1つに前記ウエハを暴露することによって達成される、方法。
適用例11:
適用例9の方法であって、前記側壁の前記粗面化は、反応性イオンエッチングによって達成される、方法。
適用例12:
適用例1ないし11のいずれかの方法であって、前記高アスペクト比フィーチャを形成する工程は、
前記シリコン系層の上にフォトレジストパターン化マスクを形成する工程と、
前記シリコン系層に前記高アスペクト比フィーチャをエッチングする工程と、
を含む、方法。
適用例13:
適用例12の方法であって、前記高アスペクト比フィーチャを形成する工程は、さらに、前記フォトレジストパターン化マスクを剥離する工程を含む、方法。
適用例14:
半導体デバイス製造に用いられるウエハを処理する方法であって、
前記ウエハ上のシリコン系層に高アスペクト比フィーチャを形成する工程と、
前記ウエハの湿式処理を実行する工程であって、前記湿式処理は、
前記ウエハを湿式洗浄する工程と、
前記フィーチャの表面の疎水性を高めるように前記フィーチャの表面特性を改質するプライマを前記ウエハ上に堆積させる工程と、
プライマの堆積に用いられた有機溶媒を脱イオン水で置き換える工程と、を含む、工程と、
その後に前記ウエハを乾燥させる工程と、
を備える、方法。
適用例15:
適用例14の方法であって、前記プライマは、自己集合単分子層を含む、方法。
適用例16:
適用例14の方法であって、前記プライマは薄膜を含み、前記薄膜は、ヘキサメチルジシロキサン、アルコキシシラン、または、アルキルシランのうちの少なくとも1つを含む、方法。
適用例17:
適用例14の方法であって、前記ウエハ上に前記プライマを堆積させる工程は、
窒素雰囲気下で、HFE、トルエン、n−ヘキサン、クロロホルム、または、アセトンのうちの少なくとも1つに含まれる0.01〜50重量%のC 8 F 13 H 4 SiCl 3 (FOTS)の溶液に前記ウエハを浸漬する工程と、
HFEでリンスする工程と、
を含む、方法。
適用例18:
適用例14ないし17のいずれかの方法であって、有機溶媒を置き換える工程は、
水と混和可能な有機溶媒で前記ウエハをリンスする工程と、
脱イオン水で前記ウエハをリンスする工程と、
を含む、方法。
適用例19:
適用例14ないし18のいずれかの方法であって、前記ウエハの前記湿式洗浄で用いられる溶液は、HCl、HF、NH 4 F、NH 3 水溶液、H 2 SO 4 、または、H 2 O 2 のうちの1または複数を含む、方法。
Claims (6)
- 半導体デバイス製造に用いられるウエハを処理する方法であって、
前記ウエハ上のシリコン系層に高アスペクト比フィーチャを形成する工程と、
前記ウエハの湿式処理を実行する工程であって、前記湿式処理は、
前記ウエハを湿式洗浄する工程と、
前記フィーチャの表面の疎水性を高めるように前記フィーチャの表面特性を改質するプライマを前記ウエハ上に堆積させる工程と、
プライマの堆積に用いられた有機溶媒を脱イオン水で置き換える工程と、を含む、工程と、
その後に前記ウエハを乾燥させる工程と、
を備える、方法。 - 請求項1に記載の方法であって、前記プライマは、自己集合単分子層を含む、方法。
- 請求項1に記載の方法であって、前記プライマは薄膜を含み、前記薄膜は、ヘキサメチルジシロキサン、アルコキシシラン、または、アルキルシランのうちの少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、前記ウエハ上に前記プライマを堆積させる工程は、
窒素雰囲気下で、HFE、トルエン、n−ヘキサン、クロロホルム、または、アセトンのうちの少なくとも1つに含まれる0.01〜50重量%のC8F13H4SiCl3(FOTS)の溶液に前記ウエハを浸漬する工程と、
HFEでリンスする工程と、
を含む、方法。 - 請求項1ないし4のいずれかに記載の方法であって、有機溶媒を置き換える工程は、
水と混和可能な有機溶媒で前記ウエハをリンスする工程と、
脱イオン水で前記ウエハをリンスする工程と、
を含む、方法。 - 請求項1ないし5のいずれかに記載の方法であって、前記ウエハの前記湿式洗浄で用いられる溶液は、HCl、HF、NH4F、NH3水溶液、H2SO4、または、H2O2のうちの1または複数を含む、方法。
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