SG182670A1 - Method of reducing pattern collapse in high aspect ratio nanostructures - Google Patents
Method of reducing pattern collapse in high aspect ratio nanostructures Download PDFInfo
- Publication number
- SG182670A1 SG182670A1 SG2012054318A SG2012054318A SG182670A1 SG 182670 A1 SG182670 A1 SG 182670A1 SG 2012054318 A SG2012054318 A SG 2012054318A SG 2012054318 A SG2012054318 A SG 2012054318A SG 182670 A1 SG182670 A1 SG 182670A1
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- SG
- Singapore
- Prior art keywords
- wafer
- primer
- nanostructures
- features
- sidewalls
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 84
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
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- 238000007788 roughening Methods 0.000 claims description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
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- 229910052731 fluorine Inorganic materials 0.000 claims description 2
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
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- 238000001039 wet etching Methods 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
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- 238000004528 spin coating Methods 0.000 description 3
- 239000011550 stock solution Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229930195733 hydrocarbon Natural products 0.000 description 2
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- GSNUFIFRDBKVIE-UHFFFAOYSA-N DMF Natural products CC1=CC=C(C)O1 GSNUFIFRDBKVIE-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- -1 NPM Chemical compound 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
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- 230000000873 masking effect Effects 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 125000001424 substituent group Chemical group 0.000 description 1
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- PISDRBMXQBSCIP-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl PISDRBMXQBSCIP-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/697,862 US8617993B2 (en) | 2010-02-01 | 2010-02-01 | Method of reducing pattern collapse in high aspect ratio nanostructures |
| PCT/US2011/022075 WO2011094132A2 (en) | 2010-02-01 | 2011-01-21 | Method of reducing pattern collapse in high aspect ratio nanostructures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG182670A1 true SG182670A1 (en) | 2012-08-30 |
Family
ID=44320060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012054318A SG182670A1 (en) | 2010-02-01 | 2011-01-21 | Method of reducing pattern collapse in high aspect ratio nanostructures |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8617993B2 (enExample) |
| JP (1) | JP5805105B2 (enExample) |
| KR (1) | KR101827020B1 (enExample) |
| CN (1) | CN102741984B (enExample) |
| SG (1) | SG182670A1 (enExample) |
| TW (1) | TWI571925B (enExample) |
| WO (1) | WO2011094132A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8440573B2 (en) * | 2010-01-26 | 2013-05-14 | Lam Research Corporation | Method and apparatus for pattern collapse free wet processing of semiconductor devices |
| US8932933B2 (en) * | 2012-05-04 | 2015-01-13 | Micron Technology, Inc. | Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures |
| US9520459B2 (en) * | 2012-12-21 | 2016-12-13 | SK Hynix Inc. | Surface treatment method for semiconductor device |
| KR102084073B1 (ko) * | 2012-12-21 | 2020-03-04 | 에스케이하이닉스 주식회사 | 반도체 장치의 표면 처리 방법 |
| US9666427B2 (en) * | 2013-06-21 | 2017-05-30 | Lam Research Corporation | Method of collapse-free drying of high aspect ratio structures |
| CN104517813A (zh) * | 2013-09-29 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | 双重图形的形成方法 |
| KR101529528B1 (ko) * | 2014-01-06 | 2015-06-18 | 한국과학기술연구원 | 저반사성 초소수 또는 초발수 유리 및 그 제조방법 |
| JP6304592B2 (ja) | 2014-03-25 | 2018-04-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| EP2980014B1 (en) | 2014-07-31 | 2019-06-26 | IMEC vzw | Method for interconnected nanowire cluster formation using an Anodic Aluminium Oxide (AAO) template |
| US9466511B2 (en) | 2014-09-18 | 2016-10-11 | Lam Research Corporation | Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material |
| US10068781B2 (en) | 2014-10-06 | 2018-09-04 | Lam Research Corporation | Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma |
| US10008396B2 (en) | 2014-10-06 | 2018-06-26 | Lam Research Corporation | Method for collapse-free drying of high aspect ratio structures |
| JP2016139774A (ja) * | 2015-01-23 | 2016-08-04 | 富士フイルム株式会社 | パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液 |
| JP6441176B2 (ja) * | 2015-07-10 | 2018-12-19 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| US9653307B1 (en) | 2016-07-14 | 2017-05-16 | Micron Technology, Inc. | Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures |
| US10446416B2 (en) * | 2016-08-09 | 2019-10-15 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
| US10748757B2 (en) | 2017-09-21 | 2020-08-18 | Honeywell International, Inc. | Thermally removable fill materials for anti-stiction applications |
| US10727044B2 (en) * | 2017-09-21 | 2020-07-28 | Honeywell International Inc. | Fill material to mitigate pattern collapse |
| US10954480B2 (en) | 2017-09-29 | 2021-03-23 | Versum Materials Us, Llc | Compositions and methods for preventing collapse of high aspect ratio structures during drying |
| US10354883B2 (en) * | 2017-10-03 | 2019-07-16 | Mattson Technology, Inc. | Surface treatment of silicon or silicon germanium surfaces using organic radicals |
| KR102891364B1 (ko) | 2017-10-23 | 2025-11-25 | 램 리서치 아게 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
| US10957530B2 (en) | 2017-12-19 | 2021-03-23 | Micron Technology, Inc. | Freezing a sacrificial material in forming a semiconductor |
| US10964525B2 (en) | 2017-12-19 | 2021-03-30 | Micron Technology, Inc. | Removing a sacrificial material via sublimation in forming a semiconductor |
| US11037779B2 (en) | 2017-12-19 | 2021-06-15 | Micron Technology, Inc. | Gas residue removal |
| US10475656B2 (en) | 2017-12-19 | 2019-11-12 | Micron Technology, Inc. | Hydrosilylation in semiconductor processing |
| US10784101B2 (en) | 2017-12-19 | 2020-09-22 | Micron Technology, Inc. | Using sacrificial solids in semiconductor processing |
| US10497558B2 (en) | 2018-02-26 | 2019-12-03 | Micron Technology, Inc. | Using sacrificial polymer materials in semiconductor processing |
| KR20190138743A (ko) * | 2018-06-06 | 2019-12-16 | 도오꾜오까고오교 가부시끼가이샤 | 기판의 처리 방법 및 린스액 |
| WO2020046706A1 (en) * | 2018-08-31 | 2020-03-05 | Honeywell International Inc. | Water soluble polymers for pattern collapse mitigation |
| US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
| CN113366617B (zh) | 2019-01-29 | 2024-10-01 | 朗姆研究公司 | 用于衬底的环境敏感表面的牺牲性保护层 |
| US10886166B2 (en) | 2019-03-08 | 2021-01-05 | International Business Machines Corporation | Dielectric surface modification in sub-40nm pitch interconnect patterning |
| CN114375489A (zh) | 2019-09-04 | 2022-04-19 | 朗姆研究公司 | 刺激响应聚合物膜和制剂 |
| CN113394074A (zh) * | 2020-03-11 | 2021-09-14 | 长鑫存储技术有限公司 | 半导体结构的处理方法 |
| CN113495675B (zh) | 2020-04-01 | 2023-08-11 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
| CN113497142B (zh) * | 2020-04-01 | 2024-04-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及半导体结构的形成方法 |
| US11862473B2 (en) | 2020-05-12 | 2024-01-02 | Lam Research Corporation | Controlled degradation of a stimuli-responsive polymer film |
| CN113889404B (zh) * | 2020-07-02 | 2024-07-05 | 长鑫存储技术有限公司 | 半导体结构的处理方法及形成方法 |
| JP7411818B2 (ja) * | 2020-07-02 | 2024-01-11 | チャンシン メモリー テクノロジーズ インコーポレイテッド | 半導体構造の処理方法及び形成方法 |
| CN113889405B (zh) * | 2020-07-02 | 2024-07-05 | 长鑫存储技术有限公司 | 半导体结构的处理方法及形成方法 |
| US11715634B2 (en) * | 2021-04-28 | 2023-08-01 | Nanya Technology Corporation | Wet clean process for fabricating semiconductor devices |
| TW202338913A (zh) * | 2021-09-27 | 2023-10-01 | 美商蘭姆研究公司 | 使用刺激響應聚合物的犧牲性支撐、表面保護及等候時間管理用之方法及配方 |
| JP2023087228A (ja) * | 2021-12-13 | 2023-06-23 | 東京エレクトロン株式会社 | ガス処理方法およびガス処理装置 |
| US12341054B2 (en) * | 2022-03-30 | 2025-06-24 | Nanya Technology Corporation | Method for fabricating semiconductor device with chelating agent |
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| JP7614273B1 (ja) * | 2023-08-28 | 2025-01-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
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| US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
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| JP4743340B1 (ja) * | 2009-10-28 | 2011-08-10 | セントラル硝子株式会社 | 保護膜形成用薬液 |
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| JP2013519217A (ja) | 2013-05-23 |
| US20110189858A1 (en) | 2011-08-04 |
| JP5805105B2 (ja) | 2015-11-04 |
| TWI571925B (zh) | 2017-02-21 |
| KR20120116457A (ko) | 2012-10-22 |
| KR101827020B1 (ko) | 2018-03-22 |
| CN102741984A (zh) | 2012-10-17 |
| US8617993B2 (en) | 2013-12-31 |
| CN102741984B (zh) | 2015-05-13 |
| TW201140682A (en) | 2011-11-16 |
| WO2011094132A3 (en) | 2011-10-13 |
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