TWI571925B - 使高深寬比之奈米結構之圖案崩塌減少發生的方法 - Google Patents

使高深寬比之奈米結構之圖案崩塌減少發生的方法 Download PDF

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Publication number
TWI571925B
TWI571925B TW100103679A TW100103679A TWI571925B TW I571925 B TWI571925 B TW I571925B TW 100103679 A TW100103679 A TW 100103679A TW 100103679 A TW100103679 A TW 100103679A TW I571925 B TWI571925 B TW I571925B
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Taiwan
Prior art keywords
wafer
processing
aspect ratio
sidewalls
semiconductor device
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TW100103679A
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English (en)
Chinese (zh)
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TW201140682A (en
Inventor
阿米爾Ａ 雅薩瑞
朱濟
允錫民
梅世禮
卡翠那 米凱俐茜可
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蘭姆研究公司
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Publication of TW201140682A publication Critical patent/TW201140682A/zh
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Publication of TWI571925B publication Critical patent/TWI571925B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW100103679A 2010-02-01 2011-01-31 使高深寬比之奈米結構之圖案崩塌減少發生的方法 TWI571925B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/697,862 US8617993B2 (en) 2010-02-01 2010-02-01 Method of reducing pattern collapse in high aspect ratio nanostructures

Publications (2)

Publication Number Publication Date
TW201140682A TW201140682A (en) 2011-11-16
TWI571925B true TWI571925B (zh) 2017-02-21

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TW100103679A TWI571925B (zh) 2010-02-01 2011-01-31 使高深寬比之奈米結構之圖案崩塌減少發生的方法

Country Status (7)

Country Link
US (1) US8617993B2 (enExample)
JP (1) JP5805105B2 (enExample)
KR (1) KR101827020B1 (enExample)
CN (1) CN102741984B (enExample)
SG (1) SG182670A1 (enExample)
TW (1) TWI571925B (enExample)
WO (1) WO2011094132A2 (enExample)

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Also Published As

Publication number Publication date
WO2011094132A2 (en) 2011-08-04
JP2013519217A (ja) 2013-05-23
US20110189858A1 (en) 2011-08-04
JP5805105B2 (ja) 2015-11-04
KR20120116457A (ko) 2012-10-22
KR101827020B1 (ko) 2018-03-22
CN102741984A (zh) 2012-10-17
US8617993B2 (en) 2013-12-31
CN102741984B (zh) 2015-05-13
SG182670A1 (en) 2012-08-30
TW201140682A (en) 2011-11-16
WO2011094132A3 (en) 2011-10-13

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