KR101822950B1 - 기판 세정 방법 및 기판 세정 시스템 - Google Patents

기판 세정 방법 및 기판 세정 시스템 Download PDF

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Publication number
KR101822950B1
KR101822950B1 KR1020130106582A KR20130106582A KR101822950B1 KR 101822950 B1 KR101822950 B1 KR 101822950B1 KR 1020130106582 A KR1020130106582 A KR 1020130106582A KR 20130106582 A KR20130106582 A KR 20130106582A KR 101822950 B1 KR101822950 B1 KR 101822950B1
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South Korea
Prior art keywords
substrate
wafer
liquid
film
processing
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KR20140067893A (ko
Inventor
미야코 가네코
타케히코 오리이
이타루 칸노
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid

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  • Cleaning Or Drying Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020130106582A 2012-11-26 2013-09-05 기판 세정 방법 및 기판 세정 시스템 Active KR101822950B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012257081A JP6000822B2 (ja) 2012-11-26 2012-11-26 基板洗浄方法および基板洗浄システム
JPJP-P-2012-257081 2012-11-26

Publications (2)

Publication Number Publication Date
KR20140067893A KR20140067893A (ko) 2014-06-05
KR101822950B1 true KR101822950B1 (ko) 2018-01-29

Family

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KR1020130106582A Active KR101822950B1 (ko) 2012-11-26 2013-09-05 기판 세정 방법 및 기판 세정 시스템

Country Status (4)

Country Link
US (1) US9443712B2 (enExample)
JP (1) JP6000822B2 (enExample)
KR (1) KR101822950B1 (enExample)
TW (1) TWI566293B (enExample)

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JP6455962B2 (ja) * 2013-03-18 2019-01-23 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6351993B2 (ja) 2013-03-18 2018-07-04 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6302700B2 (ja) 2013-03-18 2018-03-28 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
JP5977727B2 (ja) 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
JP6308910B2 (ja) 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
US9799539B2 (en) * 2014-06-16 2017-10-24 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
JP6425517B2 (ja) * 2014-11-28 2018-11-21 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6630213B2 (ja) * 2016-03-30 2020-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法およびプログラム記録媒体
US10734255B2 (en) 2016-05-25 2020-08-04 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system and memory medium
WO2018128093A1 (ja) 2017-01-05 2018-07-12 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP6951229B2 (ja) 2017-01-05 2021-10-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP6945314B2 (ja) * 2017-03-24 2021-10-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6994307B2 (ja) * 2017-03-27 2022-01-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7140110B2 (ja) * 2017-04-13 2022-09-21 Jsr株式会社 半導体基板洗浄用組成物
JPWO2019009054A1 (ja) * 2017-07-03 2020-04-16 東京エレクトロン株式会社 基板処理システム、基板洗浄方法および記憶媒体
WO2019044199A1 (ja) * 2017-08-31 2019-03-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7051334B2 (ja) * 2017-08-31 2022-04-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7136543B2 (ja) * 2017-08-31 2022-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7008489B2 (ja) * 2017-12-05 2022-01-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
EP3576133B1 (en) 2018-05-31 2023-11-22 SCREEN Holdings Co., Ltd. Substrate processing method
JP7227758B2 (ja) 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7227757B2 (ja) * 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102680866B1 (ko) 2019-07-16 2024-07-04 삼성전자주식회사 기판 세정 장치 및 이를 이용한 기판 세정 방법
JP7545890B2 (ja) * 2020-12-28 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理システムおよび基板処理方法
KR102523437B1 (ko) * 2020-12-29 2023-04-18 세메스 주식회사 기판 처리 장치 및 방법
DE102024117724A1 (de) * 2024-06-24 2025-12-24 Ams-Osram International Gmbh Vorrichtung, wafer und verfahren zur herstellung eines elektronischen bauelements

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US5879572A (en) 1996-11-19 1999-03-09 Delco Electronics Corporation Method of protecting silicon wafers during wet chemical etching
US20050267253A1 (en) 2002-07-15 2005-12-01 Yoshihiro Hayashi Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film
JP2008177471A (ja) * 2007-01-22 2008-07-31 Tokyo Electron Ltd 基板の処理方法、塗布膜除去装置及び基板処理システム
JP2012019025A (ja) 2010-07-07 2012-01-26 Tokyo Electron Ltd 液処理装置

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JPH04253332A (ja) * 1991-01-28 1992-09-09 Toshiba Corp 半導体ウェーハ処理装置
JPH11162816A (ja) * 1997-11-28 1999-06-18 Oki Electric Ind Co Ltd スピン式レジスト塗布装置およびウェーハ処理方法
JP3739220B2 (ja) 1998-11-19 2006-01-25 大日本スクリーン製造株式会社 基板処理方法及びその装置
US6245677B1 (en) * 1999-07-28 2001-06-12 Noor Haq Backside chemical etching and polishing
US7451774B2 (en) * 2000-06-26 2008-11-18 Applied Materials, Inc. Method and apparatus for wafer cleaning
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP2005322782A (ja) * 2004-05-10 2005-11-17 Sumitomo Heavy Ind Ltd 薄板の枚葉型回転処理装置及び方法
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JP2009135169A (ja) 2007-11-29 2009-06-18 Tokyo Electron Ltd 基板処理システムおよび基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879572A (en) 1996-11-19 1999-03-09 Delco Electronics Corporation Method of protecting silicon wafers during wet chemical etching
US20050267253A1 (en) 2002-07-15 2005-12-01 Yoshihiro Hayashi Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film
JP2008177471A (ja) * 2007-01-22 2008-07-31 Tokyo Electron Ltd 基板の処理方法、塗布膜除去装置及び基板処理システム
JP2012019025A (ja) 2010-07-07 2012-01-26 Tokyo Electron Ltd 液処理装置

Also Published As

Publication number Publication date
TWI566293B (zh) 2017-01-11
JP2014107313A (ja) 2014-06-09
US20140144464A1 (en) 2014-05-29
US9443712B2 (en) 2016-09-13
TW201428838A (zh) 2014-07-16
KR20140067893A (ko) 2014-06-05
JP6000822B2 (ja) 2016-10-05

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