KR101818412B1 - 광학 반도체 소자 밀봉용 경화성 실리콘 조성물, 수지-밀봉된 광학 반도체 소자의 제조 방법, 및 수지-밀봉된 광학 반도체 소자 - Google Patents

광학 반도체 소자 밀봉용 경화성 실리콘 조성물, 수지-밀봉된 광학 반도체 소자의 제조 방법, 및 수지-밀봉된 광학 반도체 소자 Download PDF

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KR101818412B1
KR101818412B1 KR1020147009269A KR20147009269A KR101818412B1 KR 101818412 B1 KR101818412 B1 KR 101818412B1 KR 1020147009269 A KR1020147009269 A KR 1020147009269A KR 20147009269 A KR20147009269 A KR 20147009269A KR 101818412 B1 KR101818412 B1 KR 101818412B1
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optical semiconductor
silicon
semiconductor element
composition
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KR20140078655A (ko
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유스케 미야모토
마코토 요시타케
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다우 코닝 도레이 캄파니 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F30/08—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
KR1020147009269A 2011-09-21 2012-09-18 광학 반도체 소자 밀봉용 경화성 실리콘 조성물, 수지-밀봉된 광학 반도체 소자의 제조 방법, 및 수지-밀봉된 광학 반도체 소자 Active KR101818412B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-205480 2011-09-21
JP2011205480A JP6057503B2 (ja) 2011-09-21 2011-09-21 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
PCT/JP2012/074601 WO2013042794A1 (en) 2011-09-21 2012-09-18 Curable silicone composition for sealing an optical semiconductor element, method of producing a resin-sealed optical semiconductor element, and resin-sealed optical semiconductor element

Publications (2)

Publication Number Publication Date
KR20140078655A KR20140078655A (ko) 2014-06-25
KR101818412B1 true KR101818412B1 (ko) 2018-01-15

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Country Link
US (1) US8912302B2 (enExample)
EP (1) EP2758473B1 (enExample)
JP (1) JP6057503B2 (enExample)
KR (1) KR101818412B1 (enExample)
CN (1) CN103814087B (enExample)
TW (1) TWI568798B (enExample)
WO (1) WO2013042794A1 (enExample)

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KR102120623B1 (ko) * 2013-02-22 2020-06-11 듀폰 도레이 스페셜티 머티리얼즈 가부시키가이샤 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 디바이스
WO2015034821A1 (en) * 2013-09-03 2015-03-12 Dow Corning Corporation Additive for a silicone encapsulant
US20150307759A1 (en) 2014-04-28 2015-10-29 Ames Rubber Corporation Solventless curable coating systems and uses thereof
WO2017087351A1 (en) * 2015-11-18 2017-05-26 Dow Corning Corporation Curable silicone composition
WO2017126199A1 (ja) * 2016-01-19 2017-07-27 セントラル硝子株式会社 硬化性シリコーン樹脂組成物およびその硬化物、並びにこれらを用いた光半導体装置
KR102601302B1 (ko) * 2017-06-19 2023-11-14 다우 실리콘즈 코포레이션 이송성형 또는 사출성형 광학 부품용 액체 실리콘 조성물, 이로부터 제조되는 광학 부품 및 이의 방법
CN112262181A (zh) 2018-06-12 2021-01-22 迈图高新材料日本合同公司 阻燃性聚有机硅氧烷组合物、阻燃性固化物及光学用部件
WO2019240124A1 (ja) * 2018-06-12 2019-12-19 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 成形用ポリオルガノシロキサン組成物、光学用部材、および成形方法
JP6981939B2 (ja) 2018-08-28 2021-12-17 信越化学工業株式会社 付加硬化型シリコーン組成物及び半導体装置
TWI844552B (zh) * 2018-09-10 2024-06-11 美商陶氏有機矽公司 用於生產光學聚矽氧總成之方法、及藉其生產之光學聚矽氧總成
KR20220094128A (ko) 2020-12-28 2022-07-05 롬엔드하스전자재료코리아유한회사 광 디바이스용 구조체, 이의 제조방법, 및 이를 위한 광경화성 실록산 수지 조성물

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Publication number Publication date
US8912302B2 (en) 2014-12-16
WO2013042794A1 (en) 2013-03-28
CN103814087A (zh) 2014-05-21
EP2758473B1 (en) 2018-12-19
EP2758473A1 (en) 2014-07-30
CN103814087B (zh) 2016-06-08
TW201323525A (zh) 2013-06-16
JP2013067683A (ja) 2013-04-18
JP6057503B2 (ja) 2017-01-11
KR20140078655A (ko) 2014-06-25
US20140235806A1 (en) 2014-08-21
TWI568798B (zh) 2017-02-01

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