JP6057503B2 - 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子 - Google Patents

光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子 Download PDF

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JP6057503B2
JP6057503B2 JP2011205480A JP2011205480A JP6057503B2 JP 6057503 B2 JP6057503 B2 JP 6057503B2 JP 2011205480 A JP2011205480 A JP 2011205480A JP 2011205480 A JP2011205480 A JP 2011205480A JP 6057503 B2 JP6057503 B2 JP 6057503B2
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sio
optical semiconductor
semiconductor element
group
composition
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JP2013067683A5 (enExample
JP2013067683A (ja
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侑典 宮本
侑典 宮本
吉武　誠
誠 吉武
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Priority to JP2011205480A priority Critical patent/JP6057503B2/ja
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Priority to PCT/JP2012/074601 priority patent/WO2013042794A1/en
Priority to US14/346,129 priority patent/US8912302B2/en
Priority to EP12772528.1A priority patent/EP2758473B1/en
Priority to KR1020147009269A priority patent/KR101818412B1/ko
Priority to CN201280044796.XA priority patent/CN103814087B/zh
Priority to TW101134820A priority patent/TWI568798B/zh
Publication of JP2013067683A publication Critical patent/JP2013067683A/ja
Publication of JP2013067683A5 publication Critical patent/JP2013067683A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F30/08—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Led Device Packages (AREA)
JP2011205480A 2011-09-21 2011-09-21 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子 Active JP6057503B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011205480A JP6057503B2 (ja) 2011-09-21 2011-09-21 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
US14/346,129 US8912302B2 (en) 2011-09-21 2012-09-18 Curable silicone composition for sealing an optical semiconductor element, method of producing a resin-sealed optical semiconductor element, and resin-sealed optical semiconductor element
EP12772528.1A EP2758473B1 (en) 2011-09-21 2012-09-18 Curable silicone composition for sealing an optical semiconductor element, method of producing a resin-sealed optical semiconductor element, and resin-sealed optical semiconductor element
KR1020147009269A KR101818412B1 (ko) 2011-09-21 2012-09-18 광학 반도체 소자 밀봉용 경화성 실리콘 조성물, 수지-밀봉된 광학 반도체 소자의 제조 방법, 및 수지-밀봉된 광학 반도체 소자
PCT/JP2012/074601 WO2013042794A1 (en) 2011-09-21 2012-09-18 Curable silicone composition for sealing an optical semiconductor element, method of producing a resin-sealed optical semiconductor element, and resin-sealed optical semiconductor element
CN201280044796.XA CN103814087B (zh) 2011-09-21 2012-09-18 用于密封光学半导体元件的可固化有机硅组合物、制备树脂密封的光学半导体元件的方法、以及树脂密封的光学半导体元件
TW101134820A TWI568798B (zh) 2011-09-21 2012-09-21 光半導體元件封裝用硬化性矽酮組合物、樹脂封裝光半導體元件之製造方法、及樹脂封裝光半導體元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011205480A JP6057503B2 (ja) 2011-09-21 2011-09-21 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子

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JP2013067683A JP2013067683A (ja) 2013-04-18
JP2013067683A5 JP2013067683A5 (enExample) 2014-09-18
JP6057503B2 true JP6057503B2 (ja) 2017-01-11

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US (1) US8912302B2 (enExample)
EP (1) EP2758473B1 (enExample)
JP (1) JP6057503B2 (enExample)
KR (1) KR101818412B1 (enExample)
CN (1) CN103814087B (enExample)
TW (1) TWI568798B (enExample)
WO (1) WO2013042794A1 (enExample)

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TWI844552B (zh) 2018-09-10 2024-06-11 美商陶氏有機矽公司 用於生產光學聚矽氧總成之方法、及藉其生產之光學聚矽氧總成
KR20220094128A (ko) 2020-12-28 2022-07-05 롬엔드하스전자재료코리아유한회사 광 디바이스용 구조체, 이의 제조방법, 및 이를 위한 광경화성 실록산 수지 조성물

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Also Published As

Publication number Publication date
WO2013042794A1 (en) 2013-03-28
EP2758473B1 (en) 2018-12-19
KR101818412B1 (ko) 2018-01-15
TW201323525A (zh) 2013-06-16
US20140235806A1 (en) 2014-08-21
EP2758473A1 (en) 2014-07-30
CN103814087B (zh) 2016-06-08
JP2013067683A (ja) 2013-04-18
KR20140078655A (ko) 2014-06-25
US8912302B2 (en) 2014-12-16
TWI568798B (zh) 2017-02-01
CN103814087A (zh) 2014-05-21

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