KR101809567B1 - 모노머, 포토레지스트 조성물 및 포토리소그래피 패턴의 형성 방법 - Google Patents

모노머, 포토레지스트 조성물 및 포토리소그래피 패턴의 형성 방법 Download PDF

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KR101809567B1
KR101809567B1 KR1020120000213A KR20120000213A KR101809567B1 KR 101809567 B1 KR101809567 B1 KR 101809567B1 KR 1020120000213 A KR1020120000213 A KR 1020120000213A KR 20120000213 A KR20120000213 A KR 20120000213A KR 101809567 B1 KR101809567 B1 KR 101809567B1
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layer
photoresist
polymer
photoresist composition
monomer
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KR20120078673A (ko
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마티아스 에스. 오버
배영철
류이
이승현
박종근
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롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
다우 글로벌 테크놀로지스 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/93—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems condensed with a ring other than six-membered
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
    • C07D317/14—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with substituted hydrocarbon radicals attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
    • C07D317/14—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with substituted hydrocarbon radicals attached to ring carbon atoms
    • C07D317/18—Radicals substituted by singly bound oxygen or sulfur atoms
    • C07D317/24—Radicals substituted by singly bound oxygen or sulfur atoms esterified
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F24/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020120000213A 2010-12-31 2012-01-02 모노머, 포토레지스트 조성물 및 포토리소그래피 패턴의 형성 방법 Expired - Fee Related KR101809567B1 (ko)

Applications Claiming Priority (2)

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US201061429101P 2010-12-31 2010-12-31
US61/429,101 2010-12-31

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Publication Number Publication Date
KR20120078673A KR20120078673A (ko) 2012-07-10
KR101809567B1 true KR101809567B1 (ko) 2017-12-15

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US (1) US8771917B2 (enExample)
EP (1) EP2472324A1 (enExample)
JP (1) JP6080358B2 (enExample)
KR (1) KR101809567B1 (enExample)
CN (1) CN102603701B (enExample)
TW (1) TWI428356B (enExample)

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JP5947028B2 (ja) * 2010-12-02 2016-07-06 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
EP2472326A1 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Polymers, photoresist compositions and methods of forming photolithographic patterns
EP2492749A1 (en) * 2011-02-28 2012-08-29 Rohm and Haas Electronic Materials LLC Photoresist compositions and methods of forming photolithographic patterns
EP2698388B1 (en) * 2011-04-15 2015-12-09 Zeon Corporation Polymerizable compound, polymerizable composition, polymer, and optically anisotropic body
JP2013225094A (ja) * 2011-10-07 2013-10-31 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP5923423B2 (ja) * 2011-10-13 2016-05-24 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP5682542B2 (ja) * 2011-11-17 2015-03-11 信越化学工業株式会社 ネガ型パターン形成方法
JP6213016B2 (ja) * 2012-08-01 2017-10-18 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6063264B2 (ja) * 2012-09-13 2017-01-18 東京エレクトロン株式会社 被処理基体を処理する方法、及びプラズマ処理装置
JP6327036B2 (ja) * 2013-07-24 2018-05-23 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体、化合物及び化合物の製造方法
CN103400750A (zh) * 2013-08-19 2013-11-20 中国科学院高能物理研究所 一种在硅衬底表面涂覆光刻胶的方法
JP5963730B2 (ja) * 2013-10-17 2016-08-03 シャープ株式会社 通信システム及び通信装置
JP6252154B2 (ja) * 2013-12-13 2017-12-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9229321B2 (en) * 2013-12-13 2016-01-05 Sumitomo Chemical Company, Limited Salt and photoresist composition comprising the same
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9229319B2 (en) 2013-12-19 2016-01-05 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US10685846B2 (en) * 2014-05-16 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor integrated circuit fabrication with pattern-reversing process
JP6319001B2 (ja) * 2014-09-08 2018-05-09 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
EP3067381A1 (en) * 2015-03-12 2016-09-14 Basf Se Coated silicon surfaces, their manufacture and application
KR101697336B1 (ko) * 2016-03-03 2017-01-17 주식회사 엘지화학 액정 배향막의 제조방법
CN105566552B (zh) * 2016-03-04 2019-05-17 江南大学 一种丙烯酸酯共聚物及其制成的248nm光刻胶组合物
US11480878B2 (en) * 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
US11574805B2 (en) * 2019-09-12 2023-02-07 Brewer Science, Inc. Selective liquiphobic surface modification of substrates
CN110724216B (zh) * 2019-11-05 2021-12-31 浙江展宇新材料有限公司 一种阻隔红外节能的pmma板材及其制备方法
TWI887523B (zh) * 2021-03-02 2025-06-21 日商Ｊｓｒ股份有限公司 感放射線性樹脂組成物、抗蝕劑圖案的形成方法、聚合物及化合物

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Publication number Publication date
TWI428356B (zh) 2014-03-01
TW201238984A (en) 2012-10-01
CN102603701A (zh) 2012-07-25
EP2472324A1 (en) 2012-07-04
KR20120078673A (ko) 2012-07-10
CN102603701B (zh) 2014-11-12
US8771917B2 (en) 2014-07-08
JP6080358B2 (ja) 2017-02-15
US20130011783A1 (en) 2013-01-10
JP2012162707A (ja) 2012-08-30

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