KR101804597B1 - 성막 장치 - Google Patents

성막 장치 Download PDF

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Publication number
KR101804597B1
KR101804597B1 KR1020130114205A KR20130114205A KR101804597B1 KR 101804597 B1 KR101804597 B1 KR 101804597B1 KR 1020130114205 A KR1020130114205 A KR 1020130114205A KR 20130114205 A KR20130114205 A KR 20130114205A KR 101804597 B1 KR101804597 B1 KR 101804597B1
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KR
South Korea
Prior art keywords
gas
gas supply
showerhead
shower head
film forming
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KR1020130114205A
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English (en)
Korean (ko)
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KR20140042699A (ko
Inventor
데츠야 사이토
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도쿄엘렉트론가부시키가이샤
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Publication of KR20140042699A publication Critical patent/KR20140042699A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020130114205A 2012-09-28 2013-09-26 성막 장치 Active KR101804597B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-217035 2012-09-28
JP2012217035A JP6123208B2 (ja) 2012-09-28 2012-09-28 成膜装置

Publications (2)

Publication Number Publication Date
KR20140042699A KR20140042699A (ko) 2014-04-07
KR101804597B1 true KR101804597B1 (ko) 2017-12-04

Family

ID=50384029

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130114205A Active KR101804597B1 (ko) 2012-09-28 2013-09-26 성막 장치

Country Status (4)

Country Link
US (1) US20140090599A1 (enExample)
JP (1) JP6123208B2 (enExample)
KR (1) KR101804597B1 (enExample)
TW (1) TWI599676B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20160070683A (ko) * 2014-12-10 2016-06-20 램 리써치 코포레이션 효과적인 혼합 및 퍼징을 위한 유입부

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US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US10128087B2 (en) 2014-04-07 2018-11-13 Lam Research Corporation Configuration independent gas delivery system
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
US10557197B2 (en) * 2014-10-17 2020-02-11 Lam Research Corporation Monolithic gas distribution manifold and various construction techniques and use cases therefor
US20160111257A1 (en) * 2014-10-17 2016-04-21 Lam Research Corporation Substrate for mounting gas supply components and methods thereof
JP6503730B2 (ja) * 2014-12-22 2019-04-24 東京エレクトロン株式会社 成膜装置
US10167552B2 (en) * 2015-02-05 2019-01-01 Lam Research Ag Spin chuck with rotating gas showerhead
EP3054032B1 (en) * 2015-02-09 2017-08-23 Coating Plasma Industrie Installation for film deposition onto and/or modification of the surface of a moving substrate
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
US10022689B2 (en) 2015-07-24 2018-07-17 Lam Research Corporation Fluid mixing hub for semiconductor processing tool
US10118263B2 (en) 2015-09-02 2018-11-06 Lam Researech Corporation Monolithic manifold mask and substrate concepts
US10215317B2 (en) 2016-01-15 2019-02-26 Lam Research Corporation Additively manufactured gas distribution manifold
KR102156390B1 (ko) 2016-05-20 2020-09-16 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리를 위한 가스 분배 샤워헤드
JP2018011032A (ja) * 2016-07-15 2018-01-18 株式会社東芝 流路構造及び処理装置
JP6988083B2 (ja) * 2016-12-21 2022-01-05 東京エレクトロン株式会社 ガス処理装置及びガス処理方法
JP6597732B2 (ja) 2017-07-24 2019-10-30 東京エレクトロン株式会社 ガス処理装置
KR102501472B1 (ko) * 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10943769B2 (en) * 2018-07-19 2021-03-09 Lam Research Corporation Gas distributor and flow verifier
JP7119747B2 (ja) * 2018-08-10 2022-08-17 東京エレクトロン株式会社 ガス処理装置及びガス処理方法
JP2022545273A (ja) 2019-08-23 2022-10-26 ラム リサーチ コーポレーション 温度制御型のシャンデリア型シャワーヘッド
KR20220052996A (ko) 2019-08-28 2022-04-28 램 리써치 코포레이션 금속 증착
JP2021044285A (ja) * 2019-09-06 2021-03-18 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6987821B2 (ja) 2019-09-26 2022-01-05 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
CN115956136A (zh) 2020-06-15 2023-04-11 朗姆研究公司 用于半导体处理工具的具有斜角气体分配通道的喷头面板
JP7573466B2 (ja) * 2021-03-17 2024-10-25 東京エレクトロン株式会社 ガス処理装置
JP7590082B2 (ja) 2021-06-10 2024-11-26 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
JP7590081B2 (ja) 2021-06-10 2024-11-26 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
US12338530B2 (en) * 2021-07-09 2025-06-24 Applied Materials, Inc. Shaped showerhead for edge plasma modulation
KR20250033571A (ko) * 2023-09-01 2025-03-10 한화세미텍 주식회사 기판 처리 장치
CN119663241A (zh) * 2024-12-24 2025-03-21 拓荆创益(沈阳)半导体设备有限公司 一种匀气混气结构

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JP2009224775A (ja) * 2008-02-20 2009-10-01 Tokyo Electron Ltd ガス供給装置、成膜装置及び成膜方法

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US5565382A (en) * 1993-10-12 1996-10-15 Applied Materials, Inc. Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
KR100267885B1 (ko) * 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
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WO2004111297A1 (ja) * 2003-06-10 2004-12-23 Tokyo Electron Limited 処理ガス供給機構、成膜装置および成膜方法

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JP2005113268A (ja) * 2003-10-09 2005-04-28 Asm Japan Kk 上流下流排気機構を備えた薄膜形成装置及び方法
JP2009224775A (ja) * 2008-02-20 2009-10-01 Tokyo Electron Ltd ガス供給装置、成膜装置及び成膜方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160070683A (ko) * 2014-12-10 2016-06-20 램 리써치 코포레이션 효과적인 혼합 및 퍼징을 위한 유입부
KR102484362B1 (ko) 2014-12-10 2023-01-02 램 리써치 코포레이션 효과적인 혼합 및 퍼징을 위한 유입부

Also Published As

Publication number Publication date
TW201433652A (zh) 2014-09-01
US20140090599A1 (en) 2014-04-03
KR20140042699A (ko) 2014-04-07
TWI599676B (zh) 2017-09-21
JP2014070249A (ja) 2014-04-21
JP6123208B2 (ja) 2017-05-10

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