TWI599676B - Film-forming device - Google Patents

Film-forming device Download PDF

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Publication number
TWI599676B
TWI599676B TW102134078A TW102134078A TWI599676B TW I599676 B TWI599676 B TW I599676B TW 102134078 A TW102134078 A TW 102134078A TW 102134078 A TW102134078 A TW 102134078A TW I599676 B TWI599676 B TW I599676B
Authority
TW
Taiwan
Prior art keywords
gas
gas supply
head
wafer
film
Prior art date
Application number
TW102134078A
Other languages
English (en)
Chinese (zh)
Other versions
TW201433652A (zh
Inventor
斉藤哲也
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201433652A publication Critical patent/TW201433652A/zh
Application granted granted Critical
Publication of TWI599676B publication Critical patent/TWI599676B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • H10P72/04—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW102134078A 2012-09-28 2013-09-23 Film-forming device TWI599676B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012217035A JP6123208B2 (ja) 2012-09-28 2012-09-28 成膜装置

Publications (2)

Publication Number Publication Date
TW201433652A TW201433652A (zh) 2014-09-01
TWI599676B true TWI599676B (zh) 2017-09-21

Family

ID=50384029

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102134078A TWI599676B (zh) 2012-09-28 2013-09-23 Film-forming device

Country Status (4)

Country Link
US (1) US20140090599A1 (enExample)
JP (1) JP6123208B2 (enExample)
KR (1) KR101804597B1 (enExample)
TW (1) TWI599676B (enExample)

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US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
JP2015201646A (ja) 2014-04-07 2015-11-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 構成独立型のガス供給システム
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
US20160111257A1 (en) * 2014-10-17 2016-04-21 Lam Research Corporation Substrate for mounting gas supply components and methods thereof
US10557197B2 (en) 2014-10-17 2020-02-11 Lam Research Corporation Monolithic gas distribution manifold and various construction techniques and use cases therefor
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
JP6503730B2 (ja) 2014-12-22 2019-04-24 東京エレクトロン株式会社 成膜装置
US10167552B2 (en) * 2015-02-05 2019-01-01 Lam Research Ag Spin chuck with rotating gas showerhead
EP3054032B1 (en) * 2015-02-09 2017-08-23 Coating Plasma Industrie Installation for film deposition onto and/or modification of the surface of a moving substrate
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
US10022689B2 (en) 2015-07-24 2018-07-17 Lam Research Corporation Fluid mixing hub for semiconductor processing tool
US10118263B2 (en) 2015-09-02 2018-11-06 Lam Researech Corporation Monolithic manifold mask and substrate concepts
US10215317B2 (en) 2016-01-15 2019-02-26 Lam Research Corporation Additively manufactured gas distribution manifold
KR102214350B1 (ko) * 2016-05-20 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리를 위한 가스 분배 샤워헤드
JP2018011032A (ja) * 2016-07-15 2018-01-18 株式会社東芝 流路構造及び処理装置
JP6988083B2 (ja) * 2016-12-21 2022-01-05 東京エレクトロン株式会社 ガス処理装置及びガス処理方法
JP6597732B2 (ja) 2017-07-24 2019-10-30 東京エレクトロン株式会社 ガス処理装置
KR102501472B1 (ko) * 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10943769B2 (en) * 2018-07-19 2021-03-09 Lam Research Corporation Gas distributor and flow verifier
JP7119747B2 (ja) * 2018-08-10 2022-08-17 東京エレクトロン株式会社 ガス処理装置及びガス処理方法
CN114341398B (zh) 2019-08-23 2024-10-29 朗姆研究公司 温控吊灯型喷头
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
JP2021044285A (ja) * 2019-09-06 2021-03-18 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6987821B2 (ja) 2019-09-26 2022-01-05 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
US12139791B2 (en) 2020-06-15 2024-11-12 Lam Research Corporation Showerhead faceplates with angled gas distribution passages for semiconductor processing tools
JP7573466B2 (ja) * 2021-03-17 2024-10-25 東京エレクトロン株式会社 ガス処理装置
JP7590081B2 (ja) 2021-06-10 2024-11-26 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
JP7590082B2 (ja) 2021-06-10 2024-11-26 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
US12338530B2 (en) * 2021-07-09 2025-06-24 Applied Materials, Inc. Shaped showerhead for edge plasma modulation
KR20250033571A (ko) * 2023-09-01 2025-03-10 한화세미텍 주식회사 기판 처리 장치
CN119663241A (zh) * 2024-12-24 2025-03-21 拓荆创益(沈阳)半导体设备有限公司 一种匀气混气结构

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US5284805A (en) * 1991-07-11 1994-02-08 Sematech, Inc. Rapid-switching rotating disk reactor
US5565382A (en) * 1993-10-12 1996-10-15 Applied Materials, Inc. Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
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US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
CN101068950A (zh) * 2003-05-30 2007-11-07 阿维扎技术公司 气体分配系统
JPWO2004111297A1 (ja) * 2003-06-10 2006-07-20 東京エレクトロン株式会社 処理ガス供給機構、成膜装置および成膜方法
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
KR101204614B1 (ko) * 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법

Also Published As

Publication number Publication date
KR101804597B1 (ko) 2017-12-04
US20140090599A1 (en) 2014-04-03
JP2014070249A (ja) 2014-04-21
KR20140042699A (ko) 2014-04-07
TW201433652A (zh) 2014-09-01
JP6123208B2 (ja) 2017-05-10

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