KR101800882B1 - 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Download PDF

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Publication number
KR101800882B1
KR101800882B1 KR1020100034355A KR20100034355A KR101800882B1 KR 101800882 B1 KR101800882 B1 KR 101800882B1 KR 1020100034355 A KR1020100034355 A KR 1020100034355A KR 20100034355 A KR20100034355 A KR 20100034355A KR 101800882 B1 KR101800882 B1 KR 101800882B1
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South Korea
Prior art keywords
film
pattern
reflective mask
absorber
absorber film
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KR1020100034355A
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English (en)
Korean (ko)
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KR20100114472A (ko
Inventor
모리오 호소야
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020100034355A 2009-04-15 2010-04-14 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Active KR101800882B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009098621A JP5507876B2 (ja) 2009-04-15 2009-04-15 反射型マスクブランク及び反射型マスクの製造方法
JPJP-P-2009-098621 2009-04-15

Publications (2)

Publication Number Publication Date
KR20100114472A KR20100114472A (ko) 2010-10-25
KR101800882B1 true KR101800882B1 (ko) 2017-11-23

Family

ID=42981227

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100034355A Active KR101800882B1 (ko) 2009-04-15 2010-04-14 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법

Country Status (4)

Country Link
US (2) US8329361B2 (https=)
JP (1) JP5507876B2 (https=)
KR (1) KR101800882B1 (https=)
TW (2) TWI486702B (https=)

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JP5275275B2 (ja) 2010-02-25 2013-08-28 株式会社東芝 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法
JP5671306B2 (ja) 2010-11-10 2015-02-18 カヤバ工業株式会社 サスペンション装置
KR20140004101A (ko) 2011-02-01 2014-01-10 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US8601404B2 (en) * 2011-03-14 2013-12-03 Synopsys, Inc. Modeling EUV lithography shadowing effect
JP6125772B2 (ja) * 2011-09-28 2017-05-10 Hoya株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
KR102064643B1 (ko) 2012-03-30 2020-01-08 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
WO2015046303A1 (ja) * 2013-09-27 2015-04-02 Hoya株式会社 多層反射膜付き基板、マスクブランク、転写用マスク及び半導体装置の製造方法
KR20150066966A (ko) 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
JP6301127B2 (ja) 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US9766536B2 (en) 2015-07-17 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mask with multilayer structure and manufacturing method by using the same
US10276662B2 (en) 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming contact trench
JP6855190B2 (ja) * 2016-08-26 2021-04-07 Hoya株式会社 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
US11150550B2 (en) 2017-08-10 2021-10-19 AGC Inc. Reflective mask blank and reflective mask
US10553428B2 (en) * 2017-08-22 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reflection mode photomask and fabrication method therefore
US10802393B2 (en) * 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
JP6556885B2 (ja) * 2018-02-22 2019-08-07 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US11221554B2 (en) 2020-01-17 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. EUV masks to prevent carbon contamination
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7117445B1 (ja) 2021-12-15 2022-08-12 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237174A (ja) * 2000-02-25 2001-08-31 Oki Electric Ind Co Ltd 反射型露光マスク
WO2008093534A1 (ja) * 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
JP2008244089A (ja) * 2007-03-27 2008-10-09 Toppan Printing Co Ltd 極端紫外線露光用マスク、極端紫外線露光用マスクブランク、極端紫外線露光用マスクの製造方法及びリソグラフィ方法

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JPH08213303A (ja) 1995-02-03 1996-08-20 Nikon Corp 反射型ｘ線マスク及びその製造法
JP5371162B2 (ja) 2000-10-13 2013-12-18 三星電子株式会社 反射型フォトマスク
JP2002246299A (ja) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子
US6653053B2 (en) 2001-08-27 2003-11-25 Motorola, Inc. Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
EP2317383A3 (en) 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
JP2006040050A (ja) 2004-07-28 2006-02-09 Olympus Corp 再生装置、カメラおよび再生装置の表示切換方法
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
WO2008084680A1 (ja) * 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237174A (ja) * 2000-02-25 2001-08-31 Oki Electric Ind Co Ltd 反射型露光マスク
WO2008093534A1 (ja) * 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
JP2008244089A (ja) * 2007-03-27 2008-10-09 Toppan Printing Co Ltd 極端紫外線露光用マスク、極端紫外線露光用マスクブランク、極端紫外線露光用マスクの製造方法及びリソグラフィ方法

Also Published As

Publication number Publication date
KR20100114472A (ko) 2010-10-25
TW201445244A (zh) 2014-12-01
US20130071779A1 (en) 2013-03-21
JP5507876B2 (ja) 2014-05-28
TWI486702B (zh) 2015-06-01
US8329361B2 (en) 2012-12-11
JP2010251490A (ja) 2010-11-04
US8709685B2 (en) 2014-04-29
TWI454833B (zh) 2014-10-01
TW201100951A (en) 2011-01-01
US20100266938A1 (en) 2010-10-21

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