KR101800404B1 - 기판의 어닐링시 열량 관리 - Google Patents

기판의 어닐링시 열량 관리 Download PDF

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Publication number
KR101800404B1
KR101800404B1 KR1020117008790A KR20117008790A KR101800404B1 KR 101800404 B1 KR101800404 B1 KR 101800404B1 KR 1020117008790 A KR1020117008790 A KR 1020117008790A KR 20117008790 A KR20117008790 A KR 20117008790A KR 101800404 B1 KR101800404 B1 KR 101800404B1
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KR
South Korea
Prior art keywords
substrate
zone
annealing
energy
preheat
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KR1020117008790A
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English (en)
Korean (ko)
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KR20110053387A (ko
Inventor
스티븐 모파트
아브힐라쉬 제이. 마우어
선다 라마무리티
조셉 라니쉬
아론 헌터
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어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110053387A publication Critical patent/KR20110053387A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
KR1020117008790A 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리 Expired - Fee Related KR101800404B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/212,214 2008-09-17
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 2008-09-17
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177033214A Division KR101868378B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Publications (2)

Publication Number Publication Date
KR20110053387A KR20110053387A (ko) 2011-05-20
KR101800404B1 true KR101800404B1 (ko) 2017-11-22

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117008790A Expired - Fee Related KR101800404B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리
KR1020177033214A Expired - Fee Related KR101868378B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Family Applications After (1)

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KR1020177033214A Expired - Fee Related KR101868378B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101800404B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG10201807844VA (enExample)
TW (3) TWI549190B (enExample)
WO (1) WO2010033389A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200012345A (ko) 2018-07-27 2020-02-05 주식회사 코윈디에스티 레이저 어닐링 장치

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
KR20170078795A (ko) * 2014-10-31 2017-07-07 어플라이드 머티어리얼스, 인코포레이티드 전기화학 디바이스 층들의 증착과 레이저 프로세싱의 통합
WO2016153716A1 (en) * 2015-03-20 2016-09-29 Applied Materials, Inc. An atomic layer process chamber for 3d conformal processing
US10256005B2 (en) * 2015-07-29 2019-04-09 Applied Materials, Inc. Rotating substrate laser anneal
JP6887234B2 (ja) * 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091806A2 (en) 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US20050103998A1 (en) 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
JP2006501636A (ja) 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理
JP4843225B2 (ja) 2004-01-22 2011-12-21 ウルトラテック インク 低濃度ドープされたシリコン基板のレーザ熱アニール

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JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
WO1999041777A1 (en) * 1998-02-13 1999-08-19 Seiko Epson Corporation Method of producing semiconductor device and heat treating apparatus
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
WO2001064591A1 (en) * 2000-03-01 2001-09-07 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091806A2 (en) 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
JP2006501636A (ja) 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US20050103998A1 (en) 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
JP4843225B2 (ja) 2004-01-22 2011-12-21 ウルトラテック インク 低濃度ドープされたシリコン基板のレーザ熱アニール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200012345A (ko) 2018-07-27 2020-02-05 주식회사 코윈디에스티 레이저 어닐링 장치

Also Published As

Publication number Publication date
WO2010033389A1 (en) 2010-03-25
SG193882A1 (en) 2013-10-30
KR101868378B1 (ko) 2018-06-18
TWI549190B (zh) 2016-09-11
EP2342739A4 (en) 2013-05-22
TW201013789A (en) 2010-04-01
KR20170130616A (ko) 2017-11-28
EP2342739A1 (en) 2011-07-13
CN102160157A (zh) 2011-08-17
CN102160157B (zh) 2015-11-25
JP5611212B2 (ja) 2014-10-22
SG10201807844VA (en) 2018-10-30
KR20110053387A (ko) 2011-05-20
TW201342480A (zh) 2013-10-16
TW201415558A (zh) 2014-04-16
TWI549191B (zh) 2016-09-11
TWI419234B (zh) 2013-12-11
JP2012503311A (ja) 2012-02-02

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