KR101790813B1 - 레이저 어닐 방법 및 장치 - Google Patents

레이저 어닐 방법 및 장치 Download PDF

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Publication number
KR101790813B1
KR101790813B1 KR1020127029844A KR20127029844A KR101790813B1 KR 101790813 B1 KR101790813 B1 KR 101790813B1 KR 1020127029844 A KR1020127029844 A KR 1020127029844A KR 20127029844 A KR20127029844 A KR 20127029844A KR 101790813 B1 KR101790813 B1 KR 101790813B1
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KR
South Korea
Prior art keywords
laser light
pulsed laser
amorphous silicon
silicon film
optical system
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KR1020127029844A
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English (en)
Korean (ko)
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KR20130089145A (ko
Inventor
고이찌 가지야마
미찌노부 미즈무라
구니유끼 하마노
Original Assignee
브이 테크놀로지 씨오. 엘티디
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Publication of KR20130089145A publication Critical patent/KR20130089145A/ko
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Publication of KR101790813B1 publication Critical patent/KR101790813B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
KR1020127029844A 2010-05-27 2011-05-11 레이저 어닐 방법 및 장치 KR101790813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010121945A JP5678333B2 (ja) 2010-05-27 2010-05-27 レーザアニール方法及び装置
JPJP-P-2010-121945 2010-05-27
PCT/JP2011/060875 WO2011148788A1 (ja) 2010-05-27 2011-05-11 レーザアニール方法及び装置

Publications (2)

Publication Number Publication Date
KR20130089145A KR20130089145A (ko) 2013-08-09
KR101790813B1 true KR101790813B1 (ko) 2017-10-26

Family

ID=45003780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127029844A KR101790813B1 (ko) 2010-05-27 2011-05-11 레이저 어닐 방법 및 장치

Country Status (5)

Country Link
JP (1) JP5678333B2 (zh)
KR (1) KR101790813B1 (zh)
CN (1) CN103038862B (zh)
TW (1) TWI549164B (zh)
WO (1) WO2011148788A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190034268A (ko) * 2016-07-26 2019-04-01 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 칩을 기판에 본딩하기 위한 방법 및 시스템

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6221088B2 (ja) * 2012-01-31 2017-11-01 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
JP5964621B2 (ja) * 2012-03-16 2016-08-03 株式会社ディスコ レーザー加工装置
CN109979805B (zh) * 2014-07-03 2023-02-21 Ipg光子公司 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
KR20180027179A (ko) * 2016-09-06 2018-03-14 주식회사 이오테크닉스 레이저 가공 장치 및 이를 이용한 레이저 가공 방법
DE102017203655B4 (de) * 2017-03-07 2019-08-22 Robert Bosch Gmbh Verfahren und Vorrichtung zur Formung von Strahlung für die Laserbearbeitung
DE102018200078B4 (de) * 2018-01-04 2020-07-02 Innovavent Gmbh Optisches System und Verfahren zum Erzeugen einer Beleuchtungslinie
JP7320975B2 (ja) * 2019-04-16 2023-08-04 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
CA3203410A1 (en) * 2021-05-10 2022-11-17 Takahiro Yamamoto Drill

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

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JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPS57104217A (en) * 1980-12-22 1982-06-29 Toshiba Corp Surface heat treatment
JP3252403B2 (ja) * 1991-08-02 2002-02-04 セイコーエプソン株式会社 レーザ照射装置及びシリコン薄膜の形成方法
JP3221149B2 (ja) * 1993-03-31 2001-10-22 ソニー株式会社 薄膜の熱処理方法
JP3388042B2 (ja) * 1994-11-18 2003-03-17 三菱電機株式会社 レーザアニーリング方法
JP2001326190A (ja) * 2000-05-17 2001-11-22 Nec Corp 薄膜処理方法及び薄膜処理装置
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4860116B2 (ja) * 2003-03-17 2012-01-25 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP2005228808A (ja) * 2004-02-10 2005-08-25 Sharp Corp 半導体デバイスの製造方法
US7547866B2 (en) * 2004-04-28 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190034268A (ko) * 2016-07-26 2019-04-01 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 칩을 기판에 본딩하기 위한 방법 및 시스템
KR102507528B1 (ko) 2016-07-26 2023-03-08 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르 베텐샤펠리즈크 온데르조에크 테엔오 칩을 기판에 본딩하기 위한 방법 및 시스템

Also Published As

Publication number Publication date
JP2011249607A (ja) 2011-12-08
CN103038862B (zh) 2016-03-16
JP5678333B2 (ja) 2015-03-04
WO2011148788A1 (ja) 2011-12-01
TWI549164B (zh) 2016-09-11
TW201205650A (en) 2012-02-01
KR20130089145A (ko) 2013-08-09
CN103038862A (zh) 2013-04-10

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