201205650 六、發明說明： 明所屬之技術領域】 發明係關於’在薄膜電晶體液晶面板等時，以對非晶石夕膜 並進行回火來形成低溫多晶频之雷射 ίίΐ^ίί^與使用微透鏡列陣，而可只針對用以形成薄 膜電日曰體之£域魏回火之雷射回火方法及裝置相關。 【先刖技術】 絲ΐί曰面ΐ時，在玻璃基板上形成非晶石夕膜，針對該非晶石夕膜， ，以連續對垂直於該光束之長度方向之方向，掃描 sit形狀的f射光’來形成低溫多晶賴。藉由 iHii非晶賴被雷射光加熱而度被溶化，其 射ί通過而使溶化之石夕，因為急冷而凝固並結晶化， 進而形成低溫多晶矽膜(專利文獻丨、2)。 低溫多晶销之形絲置時，非晶稍整體因為受 、田射而成為高溫’非祕膜之熔化凝固導致整體成為低 =?。所以，因為應形成薄膜電晶體(以下，抓)之區域以 外之區域也被回火，而有處理效率不佳的問題。 此j人提出町之方案’亦即’制微透鏡列陣，以各 同時ϋίΪΐί射絲光树晶賴上之餘織小區域，並 屮、μ ;各電晶體之微小區域分別照射脈衝雷射光並進行 二3法(ί利文獻3)。該方法時，因為只針對複數個TFT形成 ΐίϊ域之非晶石夕膜執行回火處理，而有提高雷射光之利用效率 ，而’該等傳統非晶石夕膜之雷射回火裝置時，係針對非晶矽 哕於^賴為高吸收率之XeC1氣_準分子雷射。 ^刀&田十，係使用基本波長308nm。或者，因為使用YAG雷 具JV^YAG雷射之基本波長為l〇64nm，使其成為3倍之譜波(波 ^二，而為相對於非晶矽膜為吸收特性良好之雷射光後， 再當作雷細結H &701夂 201205650 一所以’使用準分子雷射時，該準分子雷射裝置 南，此外，因為使用XeC1氣體時 凌置成本較 本較高的問題。 4泡之”較短，而有運轉成 基本稱輪低，然而， 吸收，故必須使用波長Uf長之5射光，因為不為非晶石夕膜所 波，因為4ί:ίΐί!之第3諧波之雷射光。該第3諧 充份輸出;^ 輸出之30%程度可供利用，而有無法得到 長較雷_熱處理褒置’係具備使波 之雷射St L置，藉由使YAG雷射所輸出之基本波長 有時間之=雷射縣_射後，在具 光脈衝來對被=5::=表f理， 光脈衝來iH第2層照射波長與第1光脈衝不同之第2 卻時之時間#法’係藉由延長冷 ^雷^光，電力密度之高低連動地以 多、° 3射=射光束，具有稍充份熔化 同，但係具有盈法^多照射之雷射光束，雖然波長相 火再結晶時之粒經，使用3 裝置’為了加大雷射回 衝的能量，分割成㈣當!r傳統1輸出脈 :面進行照射，來延長麻再. 201205650 時或具有時間差來照射種光能量之光’以同 化）。其後，稍為延遲’t射此旦r j，丄從最表面開始固化(結晶 固化的最表面再奴化使半導體層之開始 為均一。 佼镟汉牛導體層整體，而使結晶粒更 [習知技術文獻] [f利文獻1]日本特料39458()5 # if2]曰本特開2〇〇4_282_號公報 3]日本特開2购119%號公報 [專利文獻4]日本特公昭Μ ·號公報 [專利文獻5]日本特開昭紀9323號 [專利文獻6]曰本特公平4-20254號公報 [專利文獻7]日本綱平从觀號公報 [專利文獻8]日本特開平卜丨634〇6號公報 【發明内容】 [發明所欲解決的問題] 長大之，=術，以結餘徑之均-化、結晶粒徑之 光照射於觀，細，使跡YAG f 射 裝置’而無法有效地使用雷射統所射出之雷射光能旦。田射光源 有鑑於上述問點，本發明之目的係提供一種 ，裝置，實施非晶石夕膜之雷射回火來形成低溫多晶石夕膜 使 使用如YAG雷射之低成本的雷射光源裝置，亦可對^石2 充份能量而有效率地進行相轉變。 阳夕膜賦予 [解決問題之技術手段] 本發明之雷射回火方法，其特徵為，包含： 具有輸出第1脈衝雷射光、及輸出比該第丨脈衝雷射光更為 .201205650 ίίίίίΐ2脈衝雷射光的雷射照射部，對非晶矽膜照射該 ^的^ 由_2脈衝雷射光之騎來航該非晶石夕 兮繁部凝固前之時點，使闕1脈衝雷縣之一部分比 卿1延辦職，縣轉晶賴 弋化口陳固如之時點’使該第1脈衝雷射光之另一部分 i： 2 ^ 該第:射光之能量、及將 以下j第1脈衝雷射光，波長超過55〇1 長為55〇咖 本發明之第1雷射回火裝置，. 輸出第1脈衝雷射光之第i 4 ^„二匕3 . 光更為高階之譜波之第2脈“=，比該第1脈衝雷射 照射該第1脈衝雷射光之第的第2振I器、對非晶石夕膜 第2脈衝雷射光而形成_部之g二，該非晶頻照射該 該苐1光學系包含：卜南丨田—_勿_予’、’且 衝雷射光之照射延遲第1延遲進行之該第2脈 學系所進倾第i脈衝雷射光Z，„利用該第3光 對該非晶石夕膜之該溶化部照身$ 射延遲第2延遲時間來 餘部分之第4光學系；且 X 脈衝雷射光之另一部分或剩 該第1延遲時間，係在 石夕膜熔化後，於溶化部凝;;雷射光照射而使該非晶 部分， 時，·、，占照射該第1脈衝雷射光之該 該第2延遲時間，係在 J持炼化之該炫化部凝固前之時點，光之該部分照射而 另一部分或剩餘部分。 A射该弟1脈衝雷射光之該 201205650 該第1雷射回火裝置時，該第2脈衝雷誠，波長為55〇· 以下’而該第1崎f射光，波長超過55Qnm。 本發明之第2雷射回火裝置，其槪為，包含： 賴之雷縣之基本波的雷射絲、將該基本波變 ίί ί，之而階之魏之波長變換11、將該基本波或低階之 ^皮之弟1脈衝雷射光料至該非晶賴並進行歸之第1光學 i、广及將比該第1脈衝雷射光更為高階之請波之第2脈衝雷射 一V引，該巧晶矽膜並進行照射來形成熔化部之第2光學系；且 μ該ί,1解系包含：該第2絲线行該第2脈衝雷 银;ϋ射延遲第1延遲_來韻非晶频之娜化部照射該 第一脈？雷射光之—部分的第3光縣、及比綱該第3光學系 進订該第1 _雷射紅—部分照射延遲帛2延遲時間來對該非 ί曰ί 化部照射該第1脈衝雷射光之另—部分或剩餘部分 之弟4无子糸，3 該第1延遲時間，係在以該第2脈衝雷射光照射而使該非晶 石夕膜溶化後’於炫化部凝固前之時點，照射該第丨脈衝雷射光之 該部分者， 該第2延遲時間，係在以該第丨脈衝雷射光之該部分照射而 維持炼化之雜化部凝时之咖，照射該第丨脈 另一部分或剩餘部分者。 通 該第2雷射回火裝置時，例如，該雷射光源係基本波之波長 為1064nm之YAG雷射光源；該第i脈衝雷射光，係該基本波▲ 波長為533nm之第2諧波，·該第2脈衝雷射光，係波長為3 _ 之篦3雜浊。 〜刀nm [發明之效果] 々依據本發明，在照射高階之諧波(例如，波長為55〇nm以下 ，第2脈衝雷射光而使非晶矽膜熔化後，於熔化部凝固前，延遲 第1延遲時間，實施波長為例如超過550nm之第丨脈衝雷射光之 部分=照射。藉此，在因第2脈衝雷射光而熔化之區域處於熔化 之狀悲下，照射第1脈衝雷射光之一部分，即使為不被固體之非 8 201205650 第1脈衝#射光，姐化成金屬&之齡部，被充 部分或另、^化狀欧職部照射第1脈衝雷射光之剩餘 ii ΐι猎此，物吏用如yag雷射之波長較長之雷射 次，'木iit frl夕膜，而且’可以賦予充份夠大之能量。其 的第1 能讀兩(光束強度較高)之基本波或低階之讀波 二割成2個或以上，分割成第1脈衝雷射光 雷射光之剩餘部分、或第1脈衝雷射光之- 之另—邻八^光之另—部分(以下’亦稱為第1脈衝雷射光 邱。所二刀二Λ餘β分)後，以相互延遲第2延遲時間來照射熔化 i割成能的第2脈衝雷射光、被 脈姆H 先部分、及囉被分割之第1 ΐ與基本波及高階之雜之2個波時相比，以較 一疋強度之雷射光來進行照射，而可以更高效率來 使非晶石夕膜吸收雷射光之能量。 之第ΐΐιίϊϊ之f1f射回火裝置時，該第2振4器所輸出 ΰτ 田、，可以使用非基本波長之2次或3次之諧波即 可，故該第2雷射回火裝置可低成本。 【實施方式】 Μ 1 ’*參蝴賴^ ’針對本翻之實郷態進行具體說明。 ^ 1圖係使射魏鏡之雷射回火裝置圖。第丨圖所示之雷射回火 ^置’係於如逆交錯構造之薄膜電晶體之半導體裝置的製造步戰 ^，例如’只對麵道區_細定區舰射祕絲實施回火， 使該通道區域形成預定區域多結晶化，而形成多晶挪之裝置。 使用該微透鏡之雷伽域置，由缝^丨所射出之雷射光，被 =群2整軸平行絲，介由以錄微透鏡5賴成之微透鏡 列陣，照射於被照射體6。雷射振盡器卜如後面之第2圖所述， 例如，係以YAG雷射做為光源，而以於波長為355nm及·腦 201205650 .之2個雷射光之間設有延遲時間之方式來進行射出者。微透鏡列 陣’係於透明基板4配置著多數微透鏡5者，而使雷射光集光於 设疋在被照射體6之薄膜電晶體基板之薄膜電晶體形成預定區域 者。透明基板4係以平行於被照射體6之方式配置，微透鏡5，係 以電晶體形成預定區域之配列間距之例如2以上之整數倍(例如， 2)之間距來配置。本實施形態之被照射體6，例如，為薄膜電晶體， 對該a-Si臈之通道區域形成預定區域照射雷射光，來形成多晶矽 通道區域。、於微透鏡5之上方，配置著以使微透鏡5只對通道形 成預足區域妝射雷射光為目的之遮罩3，利用該遮罩3，於被昭射 體6劃定通道區域。 ^ 本實施形態之雷射振盪器i，如第2圖所示，包含：基本波之 波長為1064nm之YAG雷射光源u、將該基本波變換成2次之諧 ^的第1波長鶴H 12、以及變換成3次之譜波的第2波長變換 益13。第1波長變換器π，將來自雷射光源u之基本波，變換 ί 第2频SHG) ’並輸出基本波及第2譜波。' ，出波長為355nm之第3魏、第2 J = 本波。此外’第2圖中，鏡24與鏡25間之距離 5 間之距離及鏡15與鏡14間之ΐ離， 圖不上，為了谷易理解，相較於實際之物理尺寸比，以放 大縱與橫之縱橫比轉圖。 认了比以放 入读ί ^長肉變換/ 13所輸出之第3譜波(波長：355啦），由包 it% *學系2G，照射於形成著非晶頻之被照射 體18。另一方面，第2波長變換器13所輸出之基本綱i射 L06^； ί14 ' 3 t 此外，基本波之剩餘 學系22。其次，由該第3二24 25來構成第4光 基本波之第1光學系19。此:、第光^系22來構成導弓j 卜，第2波長變換器13所輸出之第2 10 201205650 =(波長：533nm)，亦可延遲成第3言皆波(波長：％ 或不 延遲而使用於非晶矽膜之照射。 祕13所輸出之基本波，其—部分於鏡14反射， 於兮、'透射鏡14。該反射量及透射量，例如，分別為50%。 /之f本波，稱為ρ波，而透射鏡14之基本波，則 從第2Ϊ本波之Ρ波之第3光學系21的光路，係 # 1«访H :器13經由鏡14、15、16而從透鏡17到達被照射 理赚if f長度’例如’3m。例如，鏡14、15與鏡16間之物 =離為約Um ’第2波長類器13所輸出之基本波，於鏡14、 p、、f 士道故可If 3m之光路Μ。所以，基本波當中之50%之 導引至第3光學系21，而使第3譜波經由第2光學系照 射^被照射體18，兩者之光路長度㈣3m之差異，該光路^ =差，’使基本波之P波，相對於第3微被延遲約 射於非晶矽膜。 此外，透射鏡14並於鏡23、24、25反射之基本波當中之s 波被導引至第4光學系22而照射於被照射體18。該第4光學李 22，係由第2波長變換器13，經由鏡14、23、24、25、16而由^ 鏡17到達被照射體18，該光路長度，例如，6m。例如，鏡23、 24與鏡25間之物理距離為約3m，第2波長變換器13所輸出之美 於鏡23、24折返’故可確保6m之光路長度。所以，基i 波备中之50%之S波，被導引至第4光學系22，而基本波 50%之P波被導引至第3光學系21，兩者之光路長度有約&之 差異，該光路長之差異，使基本波之s波，相對於基本波之s 被延遲約10ns，再照射於非晶矽膜。所以，第3諧波、p波、及$ 波’以相互間約l〇ns之延遲時間，照射於被照射體18之炫化 此外，於第3光學系21之鏡16與透鏡17之間，配置著用以 被導引至第3光學系21及第4光學系22之雷射光之強度的^咸 器26 〇 其次，針對如上所述之構成之本實施形態之雷射回火 動作進行說明。YAG雷射之基本波時，#使對非晶石夕膜進行照射， 201205650 該非晶石夕膜難以吸收，YAG雷射基本波，無法熔化非晶石夕膜，而 且’透射非晶石夕膜而到達其基底之玻璃基板，導致玻璃基板受損。 所以’傳統上’ YAG雷射時，使用第3諧波(波長為355nm)來實 施雷射回火。 然而’本實施形態時’由YAG雷射光源11，只進行1次基本 波(波長為1064nm)之雷射光的脈衝輸出。因此，該雷射光由第1 波長變換器12變換成第2諧波(SHG)，並由被輸入第2諳波及基 ，波之第2波長變換器13變換成第3諳波(THG)。其次，該第3 5皆波’介由透鏡17被照射於被照射體18，而使被照射體18產生 局部熔化。另一方面，基本波當中之卩波，經由包含鏡14、15、 16在内之第3光學系21而被延遲，例如，相對於第3譜波被延遲 10ns ’再照射於被照射體18之炼化部。此外，基本波當中之s波， 經由包含鏡23、24、25在内之第4光學系22而被延遲，例如， 相對於P波被延遲l〇ns，再照射於被照射體18之熔化部。 、第3(a)圖，係照射第3諧波後，基本波之p波，例如，被延 ^ 1〇=再照射，此外，基本波之s波，例如，被延遲_再照射 ，。八次，照射該第3諧波，因為第3諧波之波長為 355nm，非 扭熔化。假設’只照射該第3諧波時，非晶矽膜在約50邶後 二二固f此’ * 3譜波之照射後，延遲1〇nS再照射基本波之 昭Γ為該基本波之P波照射於熔化狀態之金屬別，不同於 ^晶賴時，錄本波之波長，娜二^吸收， 之全大熱源。此外，基本波之p波照射於熔化狀態 ^金屬Si <灸，延遲10ns再照射基本波之s波時，該 s ί*被d態i ifSi充份吸收，㈣該熔化部賦予大熱源。 施“it，大於譜波’雷射光之強度較高，然而，本實 μ Γ ί基本波，該能量為分別分割成50%，強度約-半之p 遲時間延遲·;局===射^相i間以之延 之P波及基本ΐΒ0夕膜。藉此’第3譜波、基本波 /之3波全部都提供熱，而對非晶矽膜整體， 12 .201205650 賦予第3圖(b)所示之熱量。 藉此，對非晶石夕膜賦予極大的熱量。YAQ·雷射之第3譜波時， 該熱里只為基本波時之30%程度。例如’ yag雷射時，若基本波 之l〇64mn波長之雷射光之能量為10，則第2諧波之533nm波長 之©射光之此量為5，第3譜波之355nm波長之雷射光之能量為 3。所以，單獨照射第3諧波時，對非晶矽膜賦予之熱量較少。所 以，若要對非晶石夕膜充份賦予熱量來實施回火，則YAG雷射之輸 出必須為極大，傳統上，其輸出損失為極大。 _、相，於此，本實施形態時，即使第3諧波之照射對非晶矽膜 賦予熱量較少，於熔化之矽凝固前，亦即，第3諧波之照射後5〇仍 士内，分2次依序照射基本波，以該基本波對熔化部賦予大熱量。 藉此^YAG雷射光源η所發之雷射光能量可以在沒有浪費之情形 下，高效率地使用於非晶矽膜之加熱。而且，該γΑ(}雷射光源u， 有，置，本低、運轉成本低之優點。基本波，因為能量較高，只 3 5皆波及基本波之2者時，一度將基本波當作高能量密度之 i够照射。相對於此，本實施形態時，將基本波分誠能量密度 與弟3諧波相同程度之p波及s波之2個，並以特定之延遲時間 延，’再照射於非晶賴之熔化部。所以，本實施形態時，相較 5土念波?第3譜波之2個波時，可以較長時間照射大致一定強 又之雷射光，而以更高效率使非晶矽膜吸收雷射光之能量。 止、、本發明，並未受限於上述實施形態，可以為各種變形。雷射 二ϋί限制為yag雷射，可以使用各種雷射。因為非晶矽膜 I伯長之雷縣而不吸收長波長之雷射光，首先，照射能量 收效率良好之短波長之雷射光使非晶補溶化後，一定之 朵後^對金屬狀態之溶化石夕’分割長波長且能量大之雷射 之昭二杯糸本發明之特徵。所以’可以實施該3階段之雷射光 可以使用各種雷射光源。此外，光能量之雷射光， 口上述實施形態之分割成2個，亦可分割成3個以上， 能遲ί定，時間即可。此外’分割之程度，如上述實施形 心不’未限定為50% ’例如，亦可以變更成4G%及6()%之分割 13 201205650 \ 比例。 一 ，上述實施形態時，使用YAG雷射之同一光源，使用第 L光學系19而以使基本波比第3諧波延遲之方式來實施2階段之 ，射光照射，然而，並未受限於此，亦可使用另一雷射光源來實 施短波長照射及其後之長波長照射。此時，只要以第1振盪器輸 出，波長之第1脈衝雷射光的時序比第2振盪器輸出短波長之第2 脈衝雷射光的時序，延遲特定延遲時間之方式，來控制脈衝之時 序即可。 、此日f，先照射之第2脈衝雷射光，應為波長550nm以下之短 波長。若為550mn以下，第2脈衝雷射光，為非晶矽膜所吸收’ 可以對非晶矽膜充份進行加熱而使其熔化。所以，能量較大之後 發的第1脈衝雷射光，波長超過550^。該波長超過55〇nm之長 波長，難以為非晶石夕膜所吸收，而不會使其溶化，可對溶化金屬 Si賦予大能量。 此外’上述實施形態時’長波長之第1脈衝雷射光係使用基 本波長，然而，亦可使用第2譜波之533nm之雷射光來取代基本 波長。該533nm之第2諧波，能量小於基本波長，然而，依對非 晶矽膜賦予之整體能量的大小，也可使用第2諧波。 此外，例如，亦可使用第4諧波及第5諧波等。此外，亦可 使用LBO結晶(LiB3〇5)或KTP結晶(KTiOP〇4)來當作第2、第3 譜波發生元件’係眾所皆知的事。此外，亦可使用BBO結晶 ®-BaB2〇4)來當作第4諧波發生元件，係眾所皆知的事。 此外，亦可一邊依序延遲第3諳波、第2諧波、基本波長之 雷射光一邊照射非晶矽膜。 [產業利用性] 依據本發明'，因為可以使用低成本之雷射光源來實施非晶矽 膜之雷射回火，故對使用雷射光之回火技術極為有用。 【圖式簡單說明】 第1圖係雷射回火裝置圖。 14 201205650 第2圖係本發明之實施形態之雷射回火事置之光源部分的模 式圖。 、 ’ 第3圖係本實施形態之動作之雷射光照射時序之曲線圖。 【主要元件符號說明】 1 :雷射光源 2 :透鏡群 3 :遮罩 4 :透明基板 5 :微透鏡 6 :被照射體 11 : YAG雷射光源 12 :第1波長變換器 13 :第2波長變換器 14、15、16、23、24、25 :鏡 17 透鏡 18 被照射體 19 第1光學系 20 第2光學系 21 第3光學系 22 第4光學系 26 衰減器 15201205650 VI. INSTRUCTIONS: The technical field of the invention belongs to the invention. In the case of a thin film transistor liquid crystal panel, etc., a low-temperature polycrystalline laser is formed by tempering an amorphous stone film and tempering ίίΐ^ίί^ The use of a microlens array can be used only for the laser tempering method and apparatus for forming a thin film electric corona body. [First-hand technique] When a wire is used, an amorphous stone film is formed on a glass substrate, and for the amorphous film, the spot-shaped f-ray is scanned in a direction perpendicular to the longitudinal direction of the beam. 'To form a low temperature polycrystalline La. When the iHii amorphous ray is heated by the laser light, it is melted, and the illuminating stone is melted and solidified and crystallized to form a low-temperature polycrystalline ruthenium film (Patent Document No. 2). When the shape of the low-temperature polycrystalline pin is set, the amorphous portion becomes a high temperature due to the radiation and the field, and the solidification of the non-secret film becomes low. Therefore, since the area outside the area where the thin film transistor should be formed (hereinafter, scratched) is also tempered, there is a problem that the processing efficiency is not good. This j person proposed the town's plan 'that is, 'making a microlens array, with each of the ϋ Ϊΐ Ϊΐ Ϊΐ 射 射 射 射 射 射 织 织 织 织 μ μ μ μ μ μ ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Carry out the two 3 method (Kelly Document 3). In this method, since the tempering treatment is performed only for the amorphous quartz film formed by the plurality of TFTs, the utilization efficiency of the laser light is improved, and the laser tempering device of the conventional amorphous stone film is used. It is based on the XeC1 gas-excimer laser with high absorption rate. ^Knife & Tian Ten, using a basic wavelength of 308nm. Or, because the basic wavelength of the YAG laser JV^YAG laser is l〇64nm, it is a three-fold spectral wave (wave 2), and is a laser light having good absorption characteristics with respect to the amorphous germanium film. As a lightning knot H & 701 夂 201205650 one, so when using excimer lasers, the excimer laser device South, in addition, because the use of XeC1 gas when the cost of erection is higher than this. "Shorter, and the operation is basically low, however, absorption, so it is necessary to use the 5th wavelength of the Uf wavelength, because it is not the wave of the amorphous stone, because the 4th harmonic of the 4th: ίΐί! The third harmonic charge output; ^ 30% of the output is available, and there is no way to get longer than the heat _ heat treatment set ' is equipped with the wave of the strike St L, by making the YAG laser The basic wavelength of the output has time = laser county _ after the shot, in the light pulse to be = 5:: = table f, the light pulse to iH the second layer of the irradiation wavelength is different from the first light pulse Time of time #法' is by extending the cold ^ Lei ^ light, the power density of the high and low linkages, more than 3 shots = beam, with a little charge The same melting, but with the laser beam of the multiplication method, although the wavelength phase fire recrystallizes the grain, use the 3 device 'in order to increase the energy of the laser backflush, split into (four) when! r traditional 1 output Pulse: the surface is irradiated to extend the hemp. At 201205650 or with the time difference to illuminate the light of the seed light energy 'to assimilate'. Then, a little delay 't shot this time rj, 丄 from the outermost surface to solidify (crystal solidified The most surface re-encapsulation makes the beginning of the semiconductor layer uniform. The conductor layer of the Han Han cattle is integrated, and the crystal grains are made more [Purpose technical literature] [f Li document 1] Japanese special material 39458 () 5 # if2] 曰 Bent Japanese Unexamined Patent Publication No. Hei. No. Hei. No. 9323 [Patent Document 5] Japanese Patent Laid-Open No. 9323 [Patent Document 6] Japanese Patent Publication No. 4-20254 [Patent Document 7] Japanese Patent Application No. [Patent Document 8] Japanese Patent Laid-Open No. 634-6 (Convention) [Problems to be Solved by the Invention] Growing up, = surgery The light of the average diameter of the balance diameter and the crystal grain size are irradiated to the view, and the trace is made to make the trace YAG f In view of the above, the object of the present invention is to provide a device for performing laser tempering of an amorphous stone film to form a laser light source that can be effectively used by a laser system. The low-temperature polycrystalline stone film enables the use of a low-cost laser light source device such as a YAG laser, and can efficiently perform phase transformation on the energy of the stone 2. The cation film is given [the technical means to solve the problem] The invention relates to a laser tempering method, comprising: a laser illuminating portion having an output of a first pulse of laser light and outputting a more than .201205650 355 laser light, the amorphous iridium film Irradiation of the ^ ^ by the pulse of _2 pulse laser light to sail the point of the amorphous stone 兮 兮 兮 兮 兮 兮 兮 兮 兮 , , , , 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一At the same time, 'the other part of the first pulse of the laser light i: 2 ^ the first: the energy of the light, and the following j first pulse of the laser light, the wavelength exceeds 55〇1 and the length is 55〇 1 laser tempering device, output the first pulse of the first pulse of laser light 4 ^„二匕3. The second pulse of the higher-order spectral wave “=, the second vibration device that irradiates the first pulse of the first pulse laser light, the amorphous laser film The second pulse of the laser light forms a portion of the _ portion, and the amorphous frequency illuminates the 苐1 optical system including: 卜南丨田__勿_予', and the irradiation delay of the laser light is delayed by the first delay In the second pulse system, the i-th pulse laser light Z is tilted, and the fourth optical system is used to delay the second delay time of the melting portion of the amorphous stone film by the third light; The other part of the X-pulse laser light or the first delay time is after the melting of the stone film, and is condensed in the melting portion; the laser light is irradiated to make the amorphous portion, the hour, and the irradiation of the first pulse The second delay time of the light emission is the time before the solidification of the J-reinforced portion is solidified, and the portion of the light is irradiated to the other portion or the remaining portion. A shot of the younger one-pulse laser light 201205650 When the first laser tempering device is used, the second pulse is Rays, the wavelength is 55 〇· or less and the first sigma is emitted, and the wavelength exceeds 55 Qnm. The second laser tempering device according to the present invention includes: a laser beam of a basic wave of Laizhi Lei County, a wavelength change of the fundamental wave, and a wavelength conversion of the Wei, 11 Wave or low-order 皮 1 脉冲 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V, the crystal film is irradiated to form a second optical system of the melting portion; and the μ1 includes: the second wire is the second pulse of Rayleigh; the first delay of the radiation delay _ The rhyme of the amorphous frequency of the Nahua Department illuminates the first pulse? The third light county of the laser light, and the third optical system of the third optical system, subscribe to the first _thrath red-partial illumination delay 帛2 delay time to illuminate the non-discriminating portion of the first pulse ray The other part of the light-emitting portion or the remaining portion of the younger brother 4 has no child, and the first delay time is after the solidification of the amorphous film by the irradiation of the second pulse of the laser light. And irradiating the portion of the second pulsed laser light, wherein the second delay time is irradiated by the portion of the second pulsed laser light to maintain the refining and chemical hybridization, and the third pulse is irradiated The other part or the rest. When the second laser tempering device is used, for example, the laser light source is a YAG laser light source having a fundamental wave wavelength of 1064 nm; the ith pulse laser light is the second harmonic of the fundamental wave ▲ wavelength 533 nm , the second pulse of laser light, the wavelength is 3 _ 篦 3 turbidity. ~Knife nm [Effect of the Invention] According to the present invention, after irradiating a high-order harmonic (for example, a wavelength of 55 〇 nm or less, the second pulse of laser light is used to melt the amorphous ruthenium film, and before the solidification of the melted portion, the retardation is delayed. In the first delay time, the wavelength of the third pulse laser light having a wavelength of, for example, more than 550 nm is irradiated, thereby irradiating the first pulse of the laser light in a region where the region melted by the second pulse laser light is melted. In the part, even if it is not the solid non-201205605650 the first pulse #射光, the sister turns into the metal & the age part, is filled with part or another, the chemical part of the European part of the first pulse of the laser light ii ΐ 猎 hunting this The object uses a laser with a longer wavelength than the yag laser, 'wood iit frl, and 'can give enough energy. The first can read two (high beam intensity) The wave or the low-order read wave is cut into two or more, and is divided into the remaining part of the first pulse laser light, or the other part of the first pulse laser light (below) Also known as the first pulse of laser light Qiu. After two knives and two β β β points), to each other When the second delay time is irradiated, the second pulse laser light that is melted and i-cut, the first portion of the pulse H, and the first one that is divided by the enthalpy are compared with the two waves of the basic wave and the high-order noise. The intensity of the laser light is irradiated, and the amorphous stone film can absorb the energy of the laser light with higher efficiency. When the first fιίϊϊ f1f is fired back to the fire device, the second vibration device outputs the ΰτ field, and It is only necessary to use the second or third harmonic of the non-basic wavelength, so the second laser tempering device can be low-cost. [Embodiment] Μ 1 '* 参蝴赖 ' ^ For the actual state of the turn Specifically, the figure 1 is a diagram of a laser tempering device for a laser beam. The laser retort shown in Fig. ' is set in the manufacturing process of a semiconductor device such as a reverse-staggered thin film transistor. 'Only in the opposite zone _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The laser light emitted by the group 2 is parallel to the whole axis, and is based on the recording microlens 5 The microlens array is irradiated onto the irradiated body 6. The laser vibrator is as described in Fig. 2 below, for example, a YAG laser is used as a light source, and the wavelength is 355 nm and the brain 201205650. The emitter is provided with a delay time between the two laser beams. The microlens array is arranged such that a plurality of microlenses 5 are disposed on the transparent substrate 4, and the laser light is collected on the irradiated body 6. The thin film transistor of the thin film transistor substrate is formed in a predetermined region. The transparent substrate 4 is disposed in parallel with the object 6 to be irradiated, and the microlens 5 is formed by an integral multiple of, for example, 2 or more of the arrangement pitch of the predetermined region of the transistor ( For example, 2) the irradiated body 6 of the present embodiment is, for example, a thin film transistor, and a predetermined region of the channel region of the a-Si is irradiated with laser light to form a polysilicon channel region. Above the microlens 5, a mask 3 for arranging the laser beam only for the pre-formed area of the microlens 5 is disposed, and the mask 3 is used to define the channel region by the illuminating body 6. As shown in Fig. 2, the laser oscillator i of the present embodiment includes a YAG laser light source u having a fundamental wave wavelength of 1064 nm, and a first wavelength crane H which converts the fundamental wave into two harmonics. 12. And the second wavelength conversion benefit 13 converted into a spectral wave of three times. The first wavelength converter π converts the fundamental wave from the laser light source u into the second frequency SHG) and outputs the fundamental wave and the second spectral wave. ', the third wave with a wavelength of 355nm and the second J = the local wave. In addition, in Fig. 2, the distance between the mirror 24 and the mirror 25 is 5 and the distance between the mirror 15 and the mirror 14 is not shown. For the sake of easy understanding, the actual physical size ratio is enlarged. Vertical and horizontal aspect ratio map. It is recognized that the third spectrum (wavelength: 355 lb) outputted by the reading ί ^ 长肉变 / 13 is irradiated onto the irradiated body 18 in which the amorphous frequency is formed by the package %% *2G. On the other hand, the basic output of the second wavelength converter 13 is L06^; ί14 ' 3 t. Further, the residual wave of the fundamental wave is 22. Next, the first optical system 19 of the fourth optical fundamental wave is constituted by the third and second 254. Therefore, the first optical system 22 constitutes a guide bow, and the second wavelength of the second wavelength converter 13 is outputted by the second 10 201205650 = (wavelength: 533 nm), and may also be delayed into the third universal wave (wavelength: % or not) The delay is used for the irradiation of the amorphous germanium film. The fundamental wave output by the secret 13 is partially reflected by the mirror 14, and is transmitted to the mirror 14. The amount of reflection and the amount of transmission are, for example, 50%. The f-wave is called a ρ-wave, and the fundamental wave of the transmission mirror 14 is the optical path of the third optical system 21 from the second Ϊ-wave, which is #1«访H: 13 via the mirrors 14, 15 And 16 from the lens 17 to reach the illuminated length if f length 'for example '3 m. For example, the object between the mirrors 14, 15 and the mirror 16 = about Um 'the basic wave output by the second wavelength class 13, The mirrors 14, p, and f can be used as the optical path of 3 m. Therefore, 50% of the fundamental waves are guided to the third optical system 21, and the third spectral wave is irradiated to the irradiated body via the second optical system. 18, the difference between the optical path lengths of the two (4) 3m, the optical path ^ = poor, 'the P wave of the fundamental wave is delayed relative to the third micro by about the amorphous germanium film. In addition, the mirror 14 is applied to the mirror 23, 24, 25 The s-wave in the fundamental wave of the radiation is guided to the fourth optical system 22 and is irradiated onto the object 18 to be irradiated. The fourth optical ray 22 is transmitted from the second wavelength converter 13 via the mirrors 14, 23, 24, and 25 And the mirror 17 reaches the irradiated body 18, and the optical path length is, for example, 6 m. For example, the physical distance between the mirrors 23, 24 and the mirror 25 is about 3 m, and the second wavelength converter 13 outputs the beauty mirror 23. 24 fold back, so the length of the optical path of 6m can be ensured. Therefore, 50% of the S wave in the base wave is guided to the fourth optical system 22, and the fundamental wave 50% of the P wave is guided to the third In the optical system 21, the optical path lengths of the two are different from each other, and the difference in the optical path length causes the s-wave of the fundamental wave to be delayed by about 10 ns with respect to the fundamental wave s, and then irradiated to the amorphous germanium film. The third harmonic, the p-wave, and the $wave' are radiated to the irradiated body 18 at a delay time of about 10 ns, and are disposed between the mirror 16 of the third optical system 21 and the lens 17. The shovel 26 for guiding the intensity of the laser light to the third optical system 21 and the fourth optical system 22, and the laser of the present embodiment configured as described above The fire action is explained. When the basic wave of the YAG laser is irradiated, the amorphous austenite film is irradiated, 201205650, the amorphous stone film is difficult to absorb, the YAG laser fundamental wave, the amorphous stone film cannot be melted, and the transmission is Amorphous stone film reaches the glass substrate of the substrate, causing damage to the glass substrate. Therefore, 'traditionally' YAG laser, the third harmonic (wavelength of 355 nm) is used to perform laser tempering. However, this implementation In the form of 'by the YAG laser light source 11, only the pulse output of the fundamental light (wavelength: 1064 nm) is performed once. Therefore, the laser light is converted into the second harmonic (SHG) by the first wavelength converter 12, and converted into the third ripple (THG) by the second wavelength converter 13 to which the second ripple and the base are input. Then, the 35th wave is irradiated to the object 18 by the lens 17, and the object 18 is locally melted. On the other hand, the chopping wave in the fundamental wave is delayed by the third optical system 21 including the mirrors 14, 15, and 16, for example, delayed by 10 ns with respect to the third spectral wave, and is irradiated to the irradiated body 18 again. The Ministry of Refining and Chemicals. Further, the s wave among the fundamental waves is delayed by the fourth optical system 22 including the mirrors 23, 24, and 25, for example, delayed by 1 ns with respect to the P wave, and then irradiated to the melted body 18 by melting. unit. In the third (a) diagram, after the third harmonic is irradiated, the p-wave of the fundamental wave is, for example, delayed by 1 〇 = re-irradiation, and the s-wave of the fundamental wave is delayed, for example, re-irradiated. Eight times, the third harmonic was irradiated because the third harmonic had a wavelength of 355 nm and was non-twisted. Suppose that when only the third harmonic is irradiated, the amorphous ruthenium film is irradiated by the '3 wave after about 50 邶, and then delayed by 1〇nS and then irradiated to the fundamental wave. The P wave is irradiated to the metal in the molten state. When it is different from the crystal, the wavelength of the local wave is recorded, and the second heat is absorbed. In addition, the p-wave of the fundamental wave is irradiated to the molten state ^Metal Si < moxibustion, when the s wave of the fundamental wave is delayed by 10 ns, the s ί* is sufficiently absorbed by the d-state i ifSi, and (4) the melting portion is given a large heat source. Applying "it, greater than the spectral wave", the intensity of the laser light is higher, however, the actual μ Γ ί basic wave, the energy is divided into 50%, the intensity is about - half of the p late time delay · Bureau === shot ^P wave and basic ΐΒ0 膜 间 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 第 第 第 第 第 第 第 第 第 第 第 第 第 第b) The heat shown. This gives a great heat to the amorphous stone film. When the third wave of YAQ·Laser is used, the heat is only 30% of the fundamental wave time. For example, 'yag laser In the case where the energy of the laser light of the fundamental wave of 10 mn 64 nm is 10, the amount of the 533 nm wavelength of the second harmonic is 5, and the energy of the 355 nm wavelength of the third spectrum is 3. Therefore, when the third harmonic is irradiated alone, the amount of heat imparted to the amorphous germanium film is small. Therefore, if heat is applied to the amorphous austenite film to perform tempering, the output of the YAG laser must be extremely large. Conventionally, the output loss is extremely large. _, phase, here, in the present embodiment, even if the third harmonic irradiation gives less heat to the amorphous germanium film, Before the solidification of the enthalpy, that is, after the irradiation of the third harmonic is 5 〇, the fundamental wave is sequentially irradiated in two steps, and the fundamental wave is given a large amount of heat to the melting portion. Thereby the YYAG laser light source η The emitted laser light energy can be efficiently used for the heating of the amorphous germanium film without waste, and the gamma ray laser light source u has the advantages of low cost and low running cost. The basic wave, because the energy is high, only 3 of the 5 waves and the fundamental wave, the fundamental wave is once irradiated as the high energy density. In contrast, in this embodiment, the fundamental wave is divided into the energy density. Two of the p-waves and the s-waves, which are the same as the harmonics of the third harmonic, and are delayed by a specific delay, and are then irradiated to the melting portion of the amorphous ray. Therefore, in the present embodiment, compared with the five soils. When two waves of the three spectral waves are used, the laser light of a certain intensity can be irradiated for a long time, and the amorphous germanium film absorbs the energy of the laser light with higher efficiency. The present invention is not limited to the above. The embodiment can be various deformations. The laser is limited to a yag laser and can be used. A kind of laser. Because the amorphous enamel film I is long and does not absorb the long-wavelength laser light, firstly, the short-wavelength laser light with good irradiation efficiency makes the amorphous resolving, after a certain amount of The molten metal of the metal state divides the characteristics of the present invention by dividing the long-wavelength and high-energy laser. Therefore, it is possible to use various laser light sources for performing the three-stage laser light. In addition, the laser light of the light energy, The above-described embodiment is divided into two, and may be divided into three or more, and may be set to be delayed, and the time may be sufficient. Further, the degree of division is not limited to 50% as described above. For example, Changed to 4G% and 6()% of the division 13 201205650 \ ratio. 1. In the above embodiment, the same light source of the YAG laser is used, and the L-th optical system 19 is used to delay the fundamental wave from the third harmonic. To perform the two-stage illumination, however, it is not limited thereto, and another laser source may be used to perform short-wavelength illumination and subsequent long-wavelength illumination. In this case, the timing of the first pulse is output, and the timing of the first pulse laser light of the wavelength is delayed by a specific delay time from the timing of outputting the second pulse of the short-wavelength light of the second oscillator, thereby controlling the timing of the pulse. can. On this day f, the second pulse of the laser light that is first irradiated should be a short wavelength of 550 nm or less. When it is 550 nm or less, the second pulsed laser light is absorbed by the amorphous germanium film. The amorphous germanium film can be sufficiently heated and melted. Therefore, the first pulse of the laser light after the energy is larger, the wavelength exceeds 550^. When the wavelength exceeds a long wavelength of 55 Å, it is difficult to absorb the amorphous film, and it does not melt, and a large energy can be imparted to the molten metal Si. Further, in the above-described embodiment, the first wavelength of the long-wavelength laser light is a fundamental wavelength, but the laser light of 533 nm of the second spectral wave may be used instead of the fundamental wavelength. The second harmonic of the 533 nm has an energy smaller than the fundamental wavelength. However, the second harmonic can be used depending on the total energy given to the amorphous film. Further, for example, the fourth harmonic, the fifth harmonic, or the like can also be used. Further, it is also known that LBO crystals (LiB3〇5) or KTP crystals (KTiOP〇4) are used as the second and third spectral generating elements. In addition, BBO Crystal ®-BaB2〇4) can also be used as the fourth harmonic generating element, which is well known. Further, the amorphous germanium film may be irradiated while sequentially delaying the third chopping, the second harmonic, and the fundamental wavelength of the laser light. [Industrial Applicability] According to the present invention, since a laser light source of a low-cost laser can be used to perform laser tempering of an amorphous germanium film, it is extremely useful for tempering technology using laser light. [Simple description of the diagram] Figure 1 is a diagram of a laser tempering device. 14 201205650 Fig. 2 is a schematic view showing a light source portion of a laser tempering device according to an embodiment of the present invention. Fig. 3 is a graph showing the timing of laser light irradiation for the operation of the present embodiment. [Description of main component symbols] 1 : Laser light source 2 : Lens group 3 : Mask 4 : Transparent substrate 5 : Microlens 6 : Irradiated body 11 : YAG laser light source 12 : First wavelength converter 13 : Second wavelength Inverter 14, 15, 16, 23, 24, 25: mirror 17 lens 18 irradiated body 19 first optical system 20 second optical system 21 third optical system 22 fourth optical system 26 attenuator 15