KR101783819B1 - 가열 장치 및 기판 가열 방법 - Google Patents

가열 장치 및 기판 가열 방법 Download PDF

Info

Publication number
KR101783819B1
KR101783819B1 KR1020137004891A KR20137004891A KR101783819B1 KR 101783819 B1 KR101783819 B1 KR 101783819B1 KR 1020137004891 A KR1020137004891 A KR 1020137004891A KR 20137004891 A KR20137004891 A KR 20137004891A KR 101783819 B1 KR101783819 B1 KR 101783819B1
Authority
KR
South Korea
Prior art keywords
substrate
heating
plane
processing system
enclosure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020137004891A
Other languages
English (en)
Korean (ko)
Other versions
KR20130105606A (ko
Inventor
에드윈 핑크
필립 호츠
Original Assignee
텔 쏠라 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텔 쏠라 아게 filed Critical 텔 쏠라 아게
Publication of KR20130105606A publication Critical patent/KR20130105606A/ko
Application granted granted Critical
Publication of KR101783819B1 publication Critical patent/KR101783819B1/ko
Assigned to 에바텍 아크티엔게젤샤프트 reassignment 에바텍 아크티엔게젤샤프트 권리의 전부이전등록 Assignors: 텔 쏠라 아게 인 리퀴데이션
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/60Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H10F77/68Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling using gaseous or liquid coolants, e.g. air flow ventilation or water circulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963Off-grid food refrigeration
    • Y02A40/966Powered by renewable energy sources
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Resistance Heating (AREA)
KR1020137004891A 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법 Expired - Fee Related KR101783819B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36791010P 2010-07-27 2010-07-27
US61/367,910 2010-07-27
PCT/EP2011/062912 WO2012013707A1 (en) 2010-07-27 2011-07-27 Heating arrangement and method for heating substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177027060A Division KR102121794B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Publications (2)

Publication Number Publication Date
KR20130105606A KR20130105606A (ko) 2013-09-25
KR101783819B1 true KR101783819B1 (ko) 2017-10-10

Family

ID=44681074

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137004891A Expired - Fee Related KR101783819B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법
KR1020177027060A Expired - Fee Related KR102121794B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177027060A Expired - Fee Related KR102121794B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Country Status (6)

Country Link
US (1) US10276412B2 (https=)
EP (1) EP2599115B1 (https=)
JP (1) JP6088970B2 (https=)
KR (2) KR101783819B1 (https=)
CN (1) CN103222041B (https=)
WO (1) WO2012013707A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130074358A1 (en) * 2011-09-24 2013-03-28 Quantum Technology Holdings Limited Heated body with high heat transfer rate material and its use
WO2014032192A1 (en) * 2012-08-27 2014-03-06 Oc Oerlikon Balzers Ag Processing arrangement with temperature conditioning arrangement and method of processing a substrate
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
WO2016106337A1 (en) * 2014-12-23 2016-06-30 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
KR102592972B1 (ko) * 2016-02-12 2023-10-24 삼성전자주식회사 센싱 모듈 기판 및 이를 포함하는 센싱 모듈
DE102016015502A1 (de) * 2016-12-23 2018-06-28 Singulus Technologies Ag Verfahren und Vorrichtung zur thermischen Behandlung beschichteter Substrate, insbesondere von Dünnschicht-Solarsubstraten
DE102018128243A1 (de) * 2018-11-12 2020-05-14 AM Metals GmbH Herstellvorrichtung zur additiven Fertigung dreidimensionaler Bauteile
JP7398935B2 (ja) * 2019-11-25 2023-12-15 東京エレクトロン株式会社 載置台、及び、検査装置
CN115461491B (zh) * 2020-07-01 2024-08-23 应用材料公司 用于操作腔室的方法、用于处理基板的装置和基板处理系统
DE102020130339A1 (de) * 2020-11-17 2022-05-19 Aixtron Se Heizeinrichtung für einen CVD-Reaktor
KR102836506B1 (ko) * 2023-03-27 2025-07-22 주식회사 히타치하이테크 플라스마 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002536829A (ja) * 1999-02-04 2002-10-29 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理(rtp)装置のための冷却シャワーヘッド
JP2007329423A (ja) * 2006-06-09 2007-12-20 Tokki Corp 基板加熱装置及び基板加熱方法
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4470369A (en) * 1982-07-12 1984-09-11 Energy Conversion Devices, Inc. Apparatus for uniformly heating a substrate
JPS63274714A (ja) * 1987-04-28 1988-11-11 Michio Sugiyama 真空熱処理炉用ラジアントチユ−ブヒ−タ
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US5108570A (en) 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
US5700992A (en) * 1993-10-08 1997-12-23 Toshiba Machine Co., Ltd. Zigzag heating device with downward directed connecting portions
JPH07221037A (ja) * 1994-02-03 1995-08-18 Dainippon Screen Mfg Co Ltd 熱処理装置
JPH0820868A (ja) * 1994-07-06 1996-01-23 Noboru Naruo 真空加熱均熱ヒーター
JPH08191074A (ja) * 1995-01-10 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH08222360A (ja) * 1995-02-10 1996-08-30 Noboru Naruo 真空加熱兼冷却均熱ヒータ
JPH10208855A (ja) * 1997-01-23 1998-08-07 Toshiba Ceramics Co Ltd 面状ヒータ
JPH1197448A (ja) * 1997-09-18 1999-04-09 Kemitoronikusu:Kk 熱処理装置とこれを用いた半導体結晶の熱処理法
JP3170573B2 (ja) * 1999-06-23 2001-05-28 助川電気工業株式会社 縦型加熱炉用円板状ヒータ
US6342691B1 (en) 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
JP2001332560A (ja) * 2000-05-23 2001-11-30 Ibiden Co Ltd 半導体製造・検査装置
JP2004146570A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP4227578B2 (ja) * 2003-09-30 2009-02-18 キヤノン株式会社 加熱方法および画像表示装置の製造方法
JP4710255B2 (ja) * 2004-03-26 2011-06-29 ウシオ電機株式会社 加熱ステージ
JP4377296B2 (ja) * 2004-07-30 2009-12-02 エア・ウォーター株式会社 成膜装置
US20060127067A1 (en) * 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof
TWI295816B (en) * 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
US7842135B2 (en) * 2006-01-09 2010-11-30 Aixtron Ag Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire
JP4142706B2 (ja) 2006-09-28 2008-09-03 富士フイルム株式会社 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置
US8057601B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US8548311B2 (en) * 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8961691B2 (en) * 2008-09-04 2015-02-24 Tokyo Electron Limited Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method
US8294068B2 (en) * 2008-09-10 2012-10-23 Applied Materials, Inc. Rapid thermal processing lamphead with improved cooling
US20100151680A1 (en) * 2008-12-17 2010-06-17 Optisolar Inc. Substrate carrier with enhanced temperature uniformity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002536829A (ja) * 1999-02-04 2002-10-29 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理(rtp)装置のための冷却シャワーヘッド
JP2007329423A (ja) * 2006-06-09 2007-12-20 Tokki Corp 基板加熱装置及び基板加熱方法
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

Also Published As

Publication number Publication date
KR20130105606A (ko) 2013-09-25
JP6088970B2 (ja) 2017-03-01
US20140202027A1 (en) 2014-07-24
EP2599115A1 (en) 2013-06-05
CN103222041A (zh) 2013-07-24
JP2013541176A (ja) 2013-11-07
KR102121794B1 (ko) 2020-06-12
CN103222041B (zh) 2016-01-20
KR20170117198A (ko) 2017-10-20
US10276412B2 (en) 2019-04-30
EP2599115B1 (en) 2015-02-25
WO2012013707A1 (en) 2012-02-02

Similar Documents

Publication Publication Date Title
KR101783819B1 (ko) 가열 장치 및 기판 가열 방법
TWI449121B (zh) 調節基板溫度之基板支撐件及其應用
TWI559425B (zh) 垂直的整合製程腔室
Schropp Industrialization of hot wire chemical vapor deposition for thin film applications
US20080302653A1 (en) Method And Device For Producing An Anti-Reflection Or Passivation Layer For Solar Cells
JP2013541176A5 (https=)
CN101636522A (zh) 真空涂覆装置
CN102421934A (zh) 高产量多晶片外延反应器
CN104995727A (zh) 带有温度调节布置的加工布置和加工基底的方法
CN101330114B (zh) 制备用于太阳能电池的抗反射或钝化层的方法和装置
US6413794B1 (en) Method of forming photovoltaic element
KR101720884B1 (ko) 열 공정에서의 유리 휨의 회피
KR20130102577A (ko) 기판 가열 장치
CN113574683B (zh) 一种用于薄膜太阳能模块的多层体的热处理的装置、设备和方法
KR101224529B1 (ko) 열처리장치
KR100977330B1 (ko) 태양 전지를 위한 반사방지층 또는 패시베이션층을 제조하기 위한 방법
KR101446631B1 (ko) 대면적기판용 플라즈마 처리 장치
KR101462321B1 (ko) 촉매 cvd 장치, 막의 형성 방법, 태양 전지의 제조 방법 및 기재의 유지체
KR100237146B1 (ko) 가열 가능한 회전테이블
JP2008202066A (ja) 真空処理装置
EP1122337A2 (en) Apparatus and method for forming deposited film
US20230245868A1 (en) Holding device, and use of the holding device
EP4609006A1 (en) Evaporator design with low heat loads
CN111621771A (zh) 用于化学气相沉积处理的加热装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20200917

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20210827

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20220818

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240927

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20240927

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240927

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000