KR101780663B1 - 감광성 수지 조성물, 릴리프 패턴 형성 재료, 감광성막, 폴리이미드막, 경화 릴리프 패턴, 그 제조 방법, 및 반도체 장치 - Google Patents
감광성 수지 조성물, 릴리프 패턴 형성 재료, 감광성막, 폴리이미드막, 경화 릴리프 패턴, 그 제조 방법, 및 반도체 장치 Download PDFInfo
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- KR101780663B1 KR101780663B1 KR1020147002626A KR20147002626A KR101780663B1 KR 101780663 B1 KR101780663 B1 KR 101780663B1 KR 1020147002626 A KR1020147002626 A KR 1020147002626A KR 20147002626 A KR20147002626 A KR 20147002626A KR 101780663 B1 KR101780663 B1 KR 101780663B1
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- Prior art keywords
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- general formula
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Links
- 0 C1*2CCC1C2 Chemical compound C1*2CCC1C2 0.000 description 17
- NNKQLUVBPJEUOR-UHFFFAOYSA-N C#Cc1cccc(N)c1 Chemical compound C#Cc1cccc(N)c1 NNKQLUVBPJEUOR-UHFFFAOYSA-N 0.000 description 1
- DBGWIQIRISZFSA-UHFFFAOYSA-N C=CC(OCC(COC(C=C)=O)(COC(C=C)=O)COC(NCCCCCCNC(OCC(COC(C=C)=O)(COC(C=C)=O)COC(C=C)=O)=O)=O)=O Chemical compound C=CC(OCC(COC(C=C)=O)(COC(C=C)=O)COC(NCCCCCCNC(OCC(COC(C=C)=O)(COC(C=C)=O)COC(C=C)=O)=O)=O)=O DBGWIQIRISZFSA-UHFFFAOYSA-N 0.000 description 1
- FANPHFKZTBINIK-UHFFFAOYSA-N C=CC(OCCOCC(COCCOC(C=C)=O)(COCCOC(C=C)=O)COCCOC(NCCCCCCNC(OCCOCC(COCCOC(C=C)=O)(COCCOC(C=C)=O)COCCOC(C=C)=O)=O)=O)=O Chemical compound C=CC(OCCOCC(COCCOC(C=C)=O)(COCCOC(C=C)=O)COCCOC(NCCCCCCNC(OCCOCC(COCCOC(C=C)=O)(COCCOC(C=C)=O)COCCOC(C=C)=O)=O)=O)=O FANPHFKZTBINIK-UHFFFAOYSA-N 0.000 description 1
- LBSXSAXOLABXMF-UHFFFAOYSA-N C=Cc(cc1)ccc1N Chemical compound C=Cc(cc1)ccc1N LBSXSAXOLABXMF-UHFFFAOYSA-N 0.000 description 1
- GTRZHYPUBGAYQL-UHFFFAOYSA-N CC(C)OCCC1CCCCC1 Chemical compound CC(C)OCCC1CCCCC1 GTRZHYPUBGAYQL-UHFFFAOYSA-N 0.000 description 1
- RJZPOJSEHSKSPZ-UHFFFAOYSA-N CC(C)OCCc1ccc(C)cc1 Chemical compound CC(C)OCCc1ccc(C)cc1 RJZPOJSEHSKSPZ-UHFFFAOYSA-N 0.000 description 1
- FMPXLXBVYDFXIC-UHFFFAOYSA-N CC(C)OCCc1ccccc1 Chemical compound CC(C)OCCc1ccccc1 FMPXLXBVYDFXIC-UHFFFAOYSA-N 0.000 description 1
- MQZPDIBXCVCMRX-UHFFFAOYSA-N CC(OC1CCCCC1)I Chemical compound CC(OC1CCCCC1)I MQZPDIBXCVCMRX-UHFFFAOYSA-N 0.000 description 1
- XZAREUVKALEUIS-CXQJBGSLSA-N CCOC(CC(C)CC1)[C@@H]1C(C)C Chemical compound CCOC(CC(C)CC1)[C@@H]1C(C)C XZAREUVKALEUIS-CXQJBGSLSA-N 0.000 description 1
- AYUWVBMUAOJNNF-UHFFFAOYSA-N CCOC1C2CC(C3)CC1CC3C2 Chemical compound CCOC1C2CC(C3)CC1CC3C2 AYUWVBMUAOJNNF-UHFFFAOYSA-N 0.000 description 1
- MIGFUKAARRHOLO-UHFFFAOYSA-N CCOCCC1CCCCC1 Chemical compound CCOCCC1CCCCC1 MIGFUKAARRHOLO-UHFFFAOYSA-N 0.000 description 1
- JFANZZWLQBVVME-UHFFFAOYSA-N ICOC1CCCCC1 Chemical compound ICOC1CCCCC1 JFANZZWLQBVVME-UHFFFAOYSA-N 0.000 description 1
- RKIMRFMKMUWNDN-UHFFFAOYSA-N ICOCc1ccccc1 Chemical compound ICOCc1ccccc1 RKIMRFMKMUWNDN-UHFFFAOYSA-N 0.000 description 1
- LMLOMLKWSBMPHD-UHFFFAOYSA-N ICOc1ccccc1 Chemical compound ICOc1ccccc1 LMLOMLKWSBMPHD-UHFFFAOYSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N Nc1cccc(O)c1 Chemical compound Nc1cccc(O)c1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UHFFFAOYSA-N O=C(C1C2C3C=CC1C3)OC2=O Chemical compound O=C(C1C2C3C=CC1C3)OC2=O KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 1
- UPGRRPUXXWPEMV-UHFFFAOYSA-N O=C(c(c1c2)ccc2C#Cc2ccccc2)OC1=O Chemical compound O=C(c(c1c2)ccc2C#Cc2ccccc2)OC1=O UPGRRPUXXWPEMV-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N O=C(c1ccccc11)OC1=O Chemical compound O=C(c1ccccc11)OC1=O LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2011-167622 | 2011-07-29 | ||
| JP2011167622 | 2011-07-29 | ||
| JP2012068197A JP5887172B2 (ja) | 2011-07-29 | 2012-03-23 | 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置 |
| JPJP-P-2012-068197 | 2012-03-23 | ||
| PCT/JP2012/067852 WO2013018524A1 (ja) | 2011-07-29 | 2012-07-12 | 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140047105A KR20140047105A (ko) | 2014-04-21 |
| KR101780663B1 true KR101780663B1 (ko) | 2017-09-21 |
Family
ID=47629055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147002626A KR101780663B1 (ko) | 2011-07-29 | 2012-07-12 | 감광성 수지 조성물, 릴리프 패턴 형성 재료, 감광성막, 폴리이미드막, 경화 릴리프 패턴, 그 제조 방법, 및 반도체 장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5887172B2 (ja) |
| KR (1) | KR101780663B1 (ja) |
| CN (1) | CN103718109B (ja) |
| WO (1) | WO2013018524A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6447242B2 (ja) * | 2014-05-15 | 2019-01-09 | Jsr株式会社 | 感放射線性樹脂組成物、絶縁膜及びその製造方法、並びに有機ｅｌ素子 |
| US9477148B1 (en) | 2015-05-26 | 2016-10-25 | Industrial Technology Research Institute | Polymer, method for preparing the same, and a photosensitive resin composition thereof |
| TWI637980B (zh) * | 2017-01-11 | 2018-10-11 | 長興材料工業股份有限公司 | 聚醯亞胺前驅物及其應用 |
| KR101949611B1 (ko) * | 2017-09-29 | 2019-05-08 | (주)휴넷플러스 | 화학 증폭형 바인더 수지 및 이를 포함하는 유기 절연막 조성물 |
| US20210364919A1 (en) * | 2019-01-23 | 2021-11-25 | Microcosm Technology Co., Ltd. | Photosensitive resin composition and application thereof |
| US11456266B2 (en) | 2019-10-31 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bump structure and method of manufacturing bump structure |
| CN117083346A (zh) * | 2021-03-30 | 2023-11-17 | 富士胶片株式会社 | 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356555A (ja) * | 2001-05-30 | 2002-12-13 | Kanegafuchi Chem Ind Co Ltd | ポリイミド前駆体及びそれを用いた感光性樹脂組成物 |
| JP2009037201A (ja) * | 2007-03-14 | 2009-02-19 | Fujifilm Corp | 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置 |
| JP2009192760A (ja) * | 2008-02-14 | 2009-08-27 | Kyowa Hakko Chemical Co Ltd | ポジ型感光性樹脂組成物 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3351582B2 (ja) * | 1993-03-12 | 2002-11-25 | 株式会社東芝 | 感放射線性樹脂組成物 |
| JP3667956B2 (ja) * | 1996-10-11 | 2005-07-06 | 株式会社東芝 | 透明性樹脂、感光性組成物、およびパターン形成方法 |
| JPH11231531A (ja) * | 1998-02-19 | 1999-08-27 | Hitachi Chem Co Ltd | 感光性樹脂組成物、パターン製造法及び半導体装置 |
| JP4211440B2 (ja) * | 2003-03-14 | 2009-01-21 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性重合体組成物、レリーフパターンの製造方法及び電子部品 |
| TWI287028B (en) * | 2002-05-17 | 2007-09-21 | Hitachi Chem Dupont Microsys | Photosensitive polymer composition, method of forming relief patterns, and electronic equipment |
| KR101067825B1 (ko) * | 2003-06-05 | 2011-09-27 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 신규한 포지티브 감광성 수지 조성물들 |
| CN101218540B (zh) * | 2005-07-14 | 2011-04-13 | 三井化学株式会社 | 正型感光性树脂组合物以及图案形成方法 |
-
2012
- 2012-03-23 JP JP2012068197A patent/JP5887172B2/ja active Active
- 2012-07-12 WO PCT/JP2012/067852 patent/WO2013018524A1/ja active Application Filing
- 2012-07-12 CN CN201280037948.3A patent/CN103718109B/zh active Active
- 2012-07-12 KR KR1020147002626A patent/KR101780663B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356555A (ja) * | 2001-05-30 | 2002-12-13 | Kanegafuchi Chem Ind Co Ltd | ポリイミド前駆体及びそれを用いた感光性樹脂組成物 |
| JP2009037201A (ja) * | 2007-03-14 | 2009-02-19 | Fujifilm Corp | 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置 |
| JP2009192760A (ja) * | 2008-02-14 | 2009-08-27 | Kyowa Hakko Chemical Co Ltd | ポジ型感光性樹脂組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5887172B2 (ja) | 2016-03-16 |
| CN103718109A (zh) | 2014-04-09 |
| KR20140047105A (ko) | 2014-04-21 |
| CN103718109B (zh) | 2017-06-23 |
| JP2013050696A (ja) | 2013-03-14 |
| WO2013018524A1 (ja) | 2013-02-07 |
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