KR101780368B1 - 포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치 - Google Patents

포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치 Download PDF

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Publication number
KR101780368B1
KR101780368B1 KR1020127034458A KR20127034458A KR101780368B1 KR 101780368 B1 KR101780368 B1 KR 101780368B1 KR 1020127034458 A KR1020127034458 A KR 1020127034458A KR 20127034458 A KR20127034458 A KR 20127034458A KR 101780368 B1 KR101780368 B1 KR 101780368B1
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KR
South Korea
Prior art keywords
substrate
photomask
transport direction
reference position
alignment mark
Prior art date
Application number
KR1020127034458A
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English (en)
Korean (ko)
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KR20130113356A (ko
Inventor
마코토 하타나카
다카미츠 이와모토
가츠시게 하시모토
Original Assignee
브이 테크놀로지 씨오. 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 브이 테크놀로지 씨오. 엘티디 filed Critical 브이 테크놀로지 씨오. 엘티디
Publication of KR20130113356A publication Critical patent/KR20130113356A/ko
Application granted granted Critical
Publication of KR101780368B1 publication Critical patent/KR101780368B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Recrystallisation Techniques (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127034458A 2010-06-17 2011-05-26 포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치 KR101780368B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-137976 2010-06-17
JP2010137976A JP5344766B2 (ja) 2010-06-17 2010-06-17 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置
PCT/JP2011/062135 WO2011158630A1 (ja) 2010-06-17 2011-05-26 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置

Publications (2)

Publication Number Publication Date
KR20130113356A KR20130113356A (ko) 2013-10-15
KR101780368B1 true KR101780368B1 (ko) 2017-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127034458A KR101780368B1 (ko) 2010-06-17 2011-05-26 포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치

Country Status (5)

Country Link
JP (1) JP5344766B2 (zh)
KR (1) KR101780368B1 (zh)
CN (1) CN102947760B (zh)
TW (1) TWI512388B (zh)
WO (1) WO2011158630A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI701517B (zh) * 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
JP2019046910A (ja) * 2017-08-31 2019-03-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN109062001B (zh) * 2018-08-27 2022-04-08 京东方科技集团股份有限公司 一种掩膜版
CN109742044B (zh) * 2019-01-11 2022-04-12 京东方科技集团股份有限公司 一种激光退火装置、阵列基板、显示装置及制作方法
CN110767576B (zh) * 2019-10-17 2022-10-21 上海华力集成电路制造有限公司 激光退火设备及激光退火工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008216593A (ja) 2007-03-02 2008-09-18 V Technology Co Ltd 露光方法及び露光装置
JP2009251290A (ja) 2008-04-07 2009-10-29 V Technology Co Ltd 露光装置
WO2010140505A1 (ja) 2009-06-03 2010-12-09 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040210B2 (ja) * 1999-06-30 2008-01-30 株式会社東芝 露光方法、レチクル及び半導体装置の製造方法
TWI227913B (en) * 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
JP4754924B2 (ja) * 2005-10-07 2011-08-24 株式会社ブイ・テクノロジー 露光装置
WO2008111214A1 (ja) * 2007-03-15 2008-09-18 Fujitsu Limited 表示パネル、積層型表示素子及びその製造方法
JP4897006B2 (ja) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008216593A (ja) 2007-03-02 2008-09-18 V Technology Co Ltd 露光方法及び露光装置
JP2009251290A (ja) 2008-04-07 2009-10-29 V Technology Co Ltd 露光装置
WO2010140505A1 (ja) 2009-06-03 2010-12-09 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置

Also Published As

Publication number Publication date
KR20130113356A (ko) 2013-10-15
WO2011158630A1 (ja) 2011-12-22
TWI512388B (zh) 2015-12-11
CN102947760A (zh) 2013-02-27
CN102947760B (zh) 2015-05-13
JP2012003038A (ja) 2012-01-05
TW201214022A (en) 2012-04-01
JP5344766B2 (ja) 2013-11-20

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