KR101780368B1 - Photomask, and laser annealing device and exposure device which use same - Google Patents

Photomask, and laser annealing device and exposure device which use same Download PDF

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KR101780368B1
KR101780368B1 KR1020127034458A KR20127034458A KR101780368B1 KR 101780368 B1 KR101780368 B1 KR 101780368B1 KR 1020127034458 A KR1020127034458 A KR 1020127034458A KR 20127034458 A KR20127034458 A KR 20127034458A KR 101780368 B1 KR101780368 B1 KR 101780368B1
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substrate
photomask
transport direction
reference position
alignment mark
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KR20130113356A (en
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마코토 하타나카
다카미츠 이와모토
가츠시게 하시모토
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브이 테크놀로지 씨오. 엘티디
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Recrystallisation Techniques (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The present invention relates to a semiconductor device comprising a plurality of mask patterns (2) formed in a predetermined arrangement pitch in a direction intersecting with a carrying direction of a substrate to allow light to pass therethrough, and a plurality of patterns And a pair of thin wires 4a and 4b formed at equal intervals and parallel to the substrate transport direction. The plurality of mask patterns 2 are arranged at positions opposite to the substrate transport direction in the substrate transport direction And a plurality of alignment marks 4 formed so as to be displaced away from each other by a predetermined distance in a direction intersecting the substrate transport direction and preset reference positions between the pair of fine wires 4a and 4b . Thereby, even when light is irradiated to a position offset in the direction intersecting the substrate transport direction of the same type of substrate, the followability to the moving substrate is improved.

Figure 112012109780901-pct00001

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photomask, a laser annealing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photomask for selectively irradiating light to a plurality of positions on a substrate following a substrate being transported in a constant direction, more specifically, To a laser annealing apparatus and an exposure apparatus using the same, and to a laser annealing apparatus and an exposure apparatus using the same.

Conventional photomasks of this kind are formed at a constant arrangement pitch in a direction intersecting with the carrying direction of the substrate and are provided with a plurality of mask patterns for passing light therethrough and a plurality of patterns formed on the substrate, And a pair of fine lines formed in parallel with the substrate transfer direction at an interval equal to an integral multiple of the mask pattern, Mark (see, for example, Patent Document 1).

Patent Document 1: JP-A-2008-216593

However, in such a conventional photomask, a pair of fine line intervals parallel to the substrate transfer direction of the alignment mark is equal to an integral multiple of the array pitch in a direction intersecting the substrate transfer direction of a plurality of patterns formed on the substrate Therefore, when light is irradiated to a position offset in the direction crossing the substrate transport direction of the same kind of substrate, the pair of fine lines of the alignment mark interfere with the edge parallel to the substrate transport direction of the substrate So that the reference position of the alignment mark can not be accurately detected. As a result, the tracking performance of the photomask with respect to the substrate deteriorates, and there is a possibility that light can not be irradiated to a target position on the substrate with high accuracy.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a photomask for improving followability to a moving substrate while laser light is irradiated to a position offset in the direction crossing the substrate transport direction, And an exposure apparatus.

In order to achieve the above object, a photomask according to a first aspect of the present invention includes a plurality of patterns formed on a surface of a substrate in a matrix with a predetermined arrangement pitch, the plurality of patterns being transported in a predetermined direction, A plurality of mask patterns formed in a predetermined arrangement pitch in a direction intersecting with the carrying direction of the substrate to allow light to pass therethrough and a plurality of patterns formed on the substrate, And a pair of thin lines formed in parallel with the substrate transport direction with an interval therebetween and arranged at a position separated from the plurality of mask patterns at a position opposite to the substrate transport direction by a certain distance from each other in the substrate transport direction, Wherein a predetermined reference position between the pair of fine lines A predetermined distance in a direction crossing the direction as is provided with a plurality of alignment marks formed in each of position.

With this configuration, when light is irradiated to a position offset in the direction crossing the substrate transport direction of the same kind of substrate, an appropriate alignment mark is selected from a plurality of alignment marks arranged at a certain distance from each other in the substrate transport direction And reduces interference between a pair of thin lines parallel to the substrate transport direction of the alignment mark and both edge portions parallel to the substrate transport direction of the pattern formed on the substrate.

 In addition, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate among the plurality of alignment marks are aligned, a pair of fine lines of the selected alignment mark is formed on the substrate Direction to a center line parallel to the direction of the center line. In this state, a pair of fine lines of the selected alignment mark is parallel to the substrate transport direction of the pixel provided on the substrate, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned, So that the interference between the pair of fine lines and the two edges parallel to the substrate transport direction of the pattern formed on the substrate is further reduced.

In addition, a plurality of microlenses were formed on the substrate side in correspondence with the respective mask patterns. Thus, light is condensed on the substrate with a plurality of microlenses formed on the substrate side corresponding to each mask pattern.

The plurality of mask patterns are formed in a matrix shape at a constant arrangement pitch in the substrate transport direction and the cross direction. Thereby, light passes through a plurality of mask patterns formed in a matrix with a predetermined arrangement pitch in the substrate transfer direction and the intersection direction thereof, and the light is irradiated to a plurality of positions on the substrate.

In the laser annealing apparatus according to the second aspect of the present invention, a plurality of patterns are formed on the surface of the substrate in the form of a matrix having a constant arrangement pitch and are transported in a predetermined direction, and a photomask disposed opposite to the substrate, A laser annealing apparatus for selectively irradiating laser light to a plurality of positions on a substrate and annealing a thin film formed on the substrate, the laser annealing apparatus comprising: A plurality of mask patterns and a pair of thin lines formed parallel to the substrate transport direction and having an interval equal to an integral multiple of the array pitch in a direction intersecting the substrate transport direction of the plurality of patterns formed on the substrate , A plurality of mask patterns are formed on the substrate And a plurality of alignment marks formed in a state in which a predetermined reference position between the pair of fine lines is deviated from each other by a predetermined distance in a direction crossing the substrate conveying direction, A mask stage for moving the photomask in a substrate transfer direction so that one alignment mark can be selected from among the plurality of alignment marks; and a mask stage for selecting one of the plurality of alignment marks in the photomask, And a positional relationship between a reference position of the selected alignment mark and a reference position set in advance on the substrate is a predetermined relationship,Is provided with a alignment means for relatively moving the substrate and the photomask group in the cross direction to the substrate transport direction.

With this configuration, when annealing processing is performed by irradiating a laser beam at a position offset in the direction intersecting with the substrate transfer direction of the same type of substrate, the mask stage is moved in the substrate transfer direction, A line camera is used to pick up a pair of thin lines parallel to the substrate transport direction of the alignment mark and a reference position on the substrate with a line camera, and based on this picked-up image, The substrate and the photomask are relatively moved in the direction crossing the substrate transport direction by the alignment means so that the positional relationship between the reference position of the substrate and the reference position of the substrate becomes a predetermined relationship.

In addition, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned among the plurality of alignment marks provided on the photomask, a pair of thin lines of the selected alignment mark are formed on the substrate And is disposed so as to be approximately aligned with a center line parallel to the substrate transport direction of the installed pixels. In this state, a pair of fine lines of the selected alignment mark is parallel to the substrate transport direction of the pixel provided on the substrate, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned, So that the interference between the pair of fine lines and the two edges parallel to the substrate transport direction of the pattern formed on the substrate is further reduced.

The photomask has a plurality of microlenses formed on the substrate side corresponding to the respective mask patterns. Thus, the laser light is condensed on the substrate by a plurality of microlenses formed on the substrate side corresponding to each mask pattern.

According to the exposure apparatus of the third invention, a plurality of patterns are formed in a matrix with a predetermined arrangement pitch on the surface, and the alignment of the substrate, which is transported in a predetermined direction, and the photomask disposed opposite to the substrate, An exposure device for selectively irradiating ultraviolet light to a plurality of positions on the substrate and exposing a photosensitive material coated on the substrate, the exposure device comprising: And a pair of thin lines formed parallel to the substrate transport direction and having an interval equal to an integral multiple of an array pitch in a direction intersecting the substrate transport direction of a plurality of patterns formed on the substrate, Wherein the plurality of mask patterns are arranged at positions opposite to the substrate transfer direction with respect to each other in the substrate transfer direction And a plurality of alignment marks formed in a state in which a predetermined reference position between the pair of fine lines deviates from each other by a predetermined distance in a direction intersecting with the substrate conveying direction is formed, A mask stage which moves the photomask in a substrate transfer direction so that one alignment mark can be selected from among the plurality of alignment marks; and a mask stage which moves the photomask in a direction intersecting the substrate transport direction of the alignment marks selected from the plurality of alignment marks of the photomask And a line camera disposed in such a manner that the center axis of the light receiving unit is aligned with the center axis of the light receiving unit in the longitudinal direction of the light receiving unit, and a positional relationship between a reference position of the selected alignment mark and a preset reference position, hemp The greater will be provided with the alignment means for relatively moving in the cross direction to the substrate transport direction.

With this configuration, when exposure is performed by irradiating ultraviolet rays at positions offset from each other in a direction intersecting the substrate transfer direction of the same type of substrate, the mask stage is moved in the substrate transfer direction, An appropriate alignment mark is selected from a plurality of alignment marks, a line camera captures a pair of thin lines parallel to the substrate transfer direction of the alignment mark and a reference position on the substrate, and based on this captured image, The substrate and the photomask are relatively moved in the direction crossing the substrate transfer direction by the alignment means so that the positional relationship between the reference position and the reference position of the substrate is predetermined.

Further, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned among the plurality of alignment marks formed on the photomask, a pair of thin lines of the selected alignment mark are formed on the substrate And is disposed so as to be approximately aligned with a center line parallel to the substrate transport direction of the installed pixels. Thus, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned with each other among the alignment marks, a pair of fine lines of the selected alignment mark are parallel to the substrate transport direction of the pixel formed on the substrate So that the interference between the pair of fine lines and the two edges parallel to the substrate transport direction of the pattern formed on the substrate is further reduced.

The photomask has a plurality of microlenses formed on the substrate side corresponding to the respective mask patterns. Thus, ultraviolet rays are condensed on the substrate with a plurality of microlenses formed on the substrate side corresponding to each mask pattern.

According to the invention of claim 1, even when irradiating light at a position offset in the direction crossing the substrate transport direction of the same kind of substrate, an appropriate one alignment mark is selected from a plurality of alignment marks, It is possible to reduce the interference between the thin lines of the pair and the both edges parallel to the substrate transport direction of the pattern formed on the substrate. Therefore, detection of a pair of fine lines of the selected alignment mark is facilitated, and calculation of the reference position of the alignment mark is facilitated. Therefore, by using one alignment mark selected from a plurality of alignment marks, the photomask can be favorably followed by the substrate being moved.

According to the invention of claim 2, since the pair of fine lines of the alignment marks selected from the plurality of alignment marks are located at the approximate center position of the pattern most distant from both edges parallel to the substrate transport direction of the pattern formed on the substrate , It is possible to avoid interference between a pair of fine lines and both edges of the pattern and to easily detect the pair of fine lines.

According to the invention of claim 3, the light can be condensed on the substrate by the microlens, and the utilization efficiency of light can be improved.

According to the fourth aspect of the present invention, the light irradiation area can be enlarged, for example, the laser annealing process or the tact of the exposure process can be shortened.

According to the fifth aspect of the present invention, even when annealing is performed by irradiating a laser beam at a position offset in the direction crossing the substrate transport direction of the same kind of substrate, an appropriate alignment mark is selected from a plurality of alignment marks, It is possible to reduce the interference between a pair of thin lines of the selected alignment mark and both edges parallel to the substrate transport direction of the pattern formed on the substrate. Therefore, detection of a pair of fine lines of the selected alignment mark is facilitated, and calculation of the reference position of the alignment mark is facilitated. Therefore, by using one alignment mark selected from a plurality of alignment marks, the photomask can be favorably followed by the substrate being moved.

According to the sixth aspect of the present invention, the pair of fine lines of the alignment marks selected from the plurality of alignment marks formed on the photomask has a width of about (about ), It is possible to avoid the interference between the pair of fine lines and the both edges of the pattern, and to easily detect the pair of fine lines. Therefore, it becomes easier to calculate the reference position of the photomask, the positional alignment between the photomask and the substrate can be reliably performed, and the laser light can be irradiated to the target position set on the substrate with high accuracy.

According to the seventh aspect of the present invention, the laser light can be focused on the substrate by the microlens, and the power of the laser light source can be reduced. Therefore, the burden of the laser light source can be reduced, and the life of the light source can be prolonged.

According to the eighth aspect of the present invention, even when exposure is performed by irradiating ultraviolet light to a position offset in the direction intersecting the substrate transport direction of the same type of substrate, an appropriate alignment mark is selected from a plurality of alignment marks, It is possible to reduce the interference between a pair of fine lines of the alignment mark and the two edges parallel to the substrate transport direction of the pattern formed on the substrate. Therefore, detection of a pair of fine lines of the selected alignment mark is facilitated, and calculation of the reference position of the alignment mark is facilitated. Therefore, by using one alignment mark selected from a plurality of alignment marks, the photomask can be favorably followed by the substrate being moved.

According to the ninth aspect of the present invention, the pair of fine lines of the alignment marks selected from the plurality of alignment marks provided on the photomask is located at the center of the pattern most distant from both edges parallel to the substrate transport direction of the pattern formed on the substrate It is possible to avoid the interference between the pair of fine lines and the both edges of the pattern so that the pair of fine lines can be more easily detected. Therefore, the reference position of the photomask can be more easily calculated, the positional alignment between the photomask and the substrate can be reliably performed, and ultraviolet rays can be irradiated with high precision to the target position set on the substrate.

According to the invention of claim 10, the ultraviolet rays can be condensed on the substrate by the microlens, so that the power of the exposure light source can be reduced. Therefore, the burden of the light source for exposure can be reduced, and the life of the light source can be prolonged.

FIG. 1 is a plan view of an embodiment of a photomask according to the present invention, and FIG. 1 (b) is a cross-sectional view taken along line X-X of FIG.
2 is a plan view showing a schematic configuration of a TFT substrate.
3 is a partial sectional front view showing a schematic structure of a laser annealing apparatus of the present invention.
4 is a block diagram showing a configuration of control means of the laser annealing apparatus.
5 is a plan view for explaining pre-alignment between the TFT substrate and the photomask using a draw-in mark provided on the TFT substrate.
Fig. 6 is a plan view for explaining the follow-up of the photomask with respect to the moving TFT substrate.
7 is an explanatory view showing a positional relationship between an annealing target position of the TFT substrate and a first alignment mark of the photomask.
8 is an explanatory view showing a positional relationship between another annealing target position of the TFT substrate and a second alignment mark of the photomask.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a plan view of an embodiment of a photomask according to the present invention, and Fig. 1 (b) is a sectional view taken along the line X-X in Fig. 1 (a). This photomask (1) has a plurality of patterns (2) and (3) formed by selectively irradiating light onto a plurality of positions on a substrate, the plurality of patterns being formed on the surface of the substrate in a matrix with a constant arrangement pitch, A plurality of micro lenses 3 and a plurality of alignment marks 4 are provided.

2, a plurality of patterns (hereinafter, referred to as " pixels 5 ") are arranged at an arrangement pitch P 1 in a substrate transfer direction indicated by an arrow A, and that arranged in the array pitch P 2 in the cross direction, along the parallel edges of the board conveying direction in each pixel 5, for the substrate transport direction of the example, to form a data line (6), each pixel (5) For example, a gate line 7 is formed along the edge portion intersecting with the gate line 7. In addition, a draw-in mark 9 having a cross shape is formed apart from the display area on the head side in the substrate transportation direction by a distance L 1 from the center position with respect to the gate line 7 on the head side in the substrate transportation direction, The mask 1 and the TFT substrate 8 can be pre-aligned with each other. At this time, when there is no draw-in mark 9, for example, a predetermined specific data line 6, which is a reference for alignment on the TFT substrate 8 side, can not be detected and another data line 6 There is a possibility that the pixels 5 are misaligned to be shifted by several pitches of the arrangement pitch P 2 in the same direction in the direction intersecting with the substrate transport direction of the pixel 5. The draw-in marks 9 are formed on the TFT substrate 8 so that the photomask 1 and the TFT substrate 8 can be aligned in advance and the detection of the specific data line 6 can be performed .

As shown in Fig. 1, the plurality of mask patterns 2 are for selectively irradiating light to a plurality of positions previously set on the TFT substrate 8 (hereinafter referred to as " light irradiation target positions "), The opening of the light shielding film 11 formed on the surface of the transparent substrate 10 has a constant shape and is arranged at the same arrangement pitch as the arrangement pitches P 1 and P 2 of the plurality of pixels 5 formed on the TFT substrate 8 And are formed in a matrix in the substrate transport direction and the intersection direction thereof. In the present embodiment, the plurality of mask patterns 2 are shown by two rows of mask pattern lines 2A and 2B crossing the substrate transport direction.

A plurality of microlenses 3 are provided on the rear surface (on the side of the TFT substrate 8) of the transparent substrate 10 as shown in Fig. 1 (b). The plurality of microlenses 3 are convex lenses for condensing light on the TFT substrate 8 and are arranged so that the optical axes are aligned with the centers of the respective mask patterns 2.

In the first to third observation windows 12A, 12B and 12C formed at positions opposite to the substrate conveying direction indicated by an arrow A with respect to the plurality of mask patterns 2, first, second and third alignment windows Marks 4A, 4B and 4C are formed. The first to third alignment marks 4A to 4C follow the moving TFT substrate 8 while moving the photomask 1 in a zigzag manner and are moved on the TFT substrate 8 The first alignment mark 4A is disposed so as to be spaced apart from the first alignment mark 4A by a distance L 2 in the substrate transport direction and is arranged so as to be aligned with a central axis crossing the substrate transport direction has a longitudinal central axis of the mask pattern columns (2A) is formed to a distance L 3.

In addition, with a first to third alignment mark (4A to 4C) are the same distance nP 2 (n is an integer of 1 or greater) and the substrate transport direction and an integral multiple of the arrangement pitch P 2 of the cross-direction of the plurality of pixels 5, respectively, And one fine line 4c that is obliquely intersected with the substrate transport direction is formed between a pair of fine lines 4a and 4b formed in parallel to the substrate transport direction, and the second and third alignment marks 4B, 4C) of the first alignment marks 4A (for example, the middle point between the pair of fine lines 4a, 4b) is positioned at a distance from the reference position of the first alignment mark 4A in the direction intersecting the substrate- (D 1 , D 2 ).

In this case, when the photomask 1 of the present invention is used in a laser annealing apparatus or an exposure apparatus to be described later, the thin line 4c intersecting the substrate transport direction obliquely intersects the reference position of the photomask 1, On the rectangular central axis of the elongated light receiving portion 24 of the line camera 17 (see Fig. 5) installed for detecting the reference position of the TFT substrate 8, the alignment mark 4 of the photomask 1 And is used to precisely align the center line intersecting the substrate transport direction. More specifically, the position of the pair of fine lines 4a, 4b and the slanted fine line 4c of the alignment mark 4 is detected based on the one-dimensional image picked up by the line camera 17, And 4c and the distance between the fine lines 4c and 4b are calculated so that the photomask 1 is moved in the substrate transfer direction so that the two distances become equal to each other, Alignment is performed.

The slanted thin line 4c can also be used for detecting the gate line 7 formed on the TFT substrate 8 as described above. The dimension of the portion of the gate line 7 divided by the three fine lines 4a to 4c of the alignment mark 4 is calculated by taking the image of the gate line 7 by the line camera 17, do. If the gate line 7 is detected when the dimension between the fine lines 4a and 4c of the gate line 7 and the dimension between the fine lines 4c and 4b are equal to each other, And a moment coinciding with the center line of the intersecting direction can be detected. Therefore, the moving distance or the moving time of the TFT substrate 8 is measured based on the moment when the gate line 7 coincides with the center line of the alignment mark 4, and when the moving distance or the moving time is a predetermined constant value Laser light or ultraviolet light can be irradiated to the target position of light irradiation on the TFT substrate 8 accurately.

The reference positions of the first to third alignment marks 4A to 4C are formed so as to have a predetermined positional relationship with the mask pattern 2. For example, in the present embodiment, as shown in Fig. 1, the center line parallel to the substrate transport direction of the first alignment mark 4A is aligned with the center of the mask pattern array 2A And the second alignment mark 4B is formed so as to conform to the center position of the mask pattern 2 so that the center position of the second alignment mark 4B is the distance D 1 in the direction crossing the substrate transport direction with respect to the center position of the first alignment mark 4A = P is formed of a 2/2 as much out of position. Therefore, the center line parallel to the substrate transport direction of the second alignment mark 4B coincides with the center of one of the mask patterns 2. Further, a state shifted as much as three alignment marks (4C) is the center position the the distance D 2 direction crossing the substrate transport direction with respect to the center position of the first alignment mark (4A) = mP 2/4 (m is odd number) Respectively. Therefore, the third center line is parallel to the substrate transport direction of the alignment marks (4C) is in conformity to any one of the position shifted by P 2/4 in the cross direction to the substrate transport direction from the center of the mask pattern (2).

In the state where the reference position of the selected alignment mark 4 and the reference position set on the TFT substrate 8 are aligned with each other among the first to third alignment marks 4A to 4C, Are arranged so as to approximately coincide with the center line parallel to the substrate transport direction of the pixel 5, respectively. Therefore, when the alignment marks 4A to 4C are used to align the photomask 1 and the TFT substrate 8, the pair of fine lines 4a to 4c of the alignment marks 4A to 4C, 4b are located on the approximate center line of the pixel 5 sufficiently distant from the left and right edges of the pixel 5 parallel to the substrate transport direction so that interference with the data line 6 disposed along the edge of the pixel 5 The detection of the fine lines 4a and 4b becomes easy. Therefore, it is easy to calculate the reference positions of the alignment marks 4A to 4C.

The reference position of each of the alignment marks 4A to 4C is not limited to the midpoint between the pair of fine wires 4a and 4b and is set such that the pair of fine wires 4a and 4b are internally divided at a predetermined ratio Position, or one of the pair of fine wires 4a and 4b may be defined as the reference position.

Although the microlenses 3 are provided on the TFT substrate 8 side in correspondence with the mask pattern 2 in the above embodiment, the present invention is not limited to this, No need. When the photomask (1) of the present invention is used for laser annealing, it is effective to provide the microlenses (3) because laser energy can be condensed. Further, in the case of being used for exposure, the microlenses 3 are not necessarily required. However, when the microlenses 3 are provided, the mask pattern 2 can be projected on the substrate in a reduced scale, and the resolution of the exposure pattern can be improved.

In the above-described embodiment, the case where two rows of mask pattern rows 2A and 2B are provided has been described. However, the present invention is not limited thereto. The mask pattern row may be one row or three or more rows good.

Next, the laser annealing apparatus using the photomask 1 according to the present invention will be described. 3 is a partial cross-sectional front view showing a schematic structure of the laser annealing apparatus of the present invention. This laser annealing apparatus has a structure in which a plurality of pixels 5 are formed in the form of a matrix at a constant arrangement pitch on the surface and transported in the direction of arrow A, for example, a TFT substrate 8 and a TFT substrate 8 And the laser light 21 is selectively irradiated to a plurality of positions on the TFT substrate 8 to anneal the thin film of amorphous silicon formed on the TFT substrate 8 to form polysilicon The laser beam source 14, the coupling optical system 15, the mask stage 16, the line camera 17, the alignment means 18 and the control means 19 Respectively.

The transporting means 13 carries the TFT substrate 8 on the upper surface and transports the TFT substrate 8 at a constant speed in the direction of arrow A shown in Fig. 3, for example. (Not shown) in the state that the TFT substrate 8 is floated on the air stage 20 by a predetermined amount in accordance with the balance between the ejection of the gas and the sucking of the gas. And is provided with a position sensor and a speed sensor (not shown) for holding and conveying both edges of the TFT substrate 8. [

A laser light source 14 is provided above the conveying means 13. The laser light source 14 is, for example, an excimer laser that emits laser light 21 having a wavelength of 308 nm or 353 nm at a repetition rate of, for example, 50 Hz.

A coupling optical system 15 is provided on the optical path of the laser light 21 emitted from the laser light source 14. The coupling optical system 15 expands the diameter of the light bundle of the laser light 21 and makes the intensity distribution in the cross section of the light bundle uniform so as to irradiate the photomask 1. For example, An eyepiece lens or a plurality of condenser lenses.

A mask stage 16 is provided on the downstream side of the coupling optical system 15 in the traveling direction of the laser beam 21. The mask stage 16 holds the photomask 1 so as to face the TFT substrate 8 so as to face the TFT substrate 8. An opening 22 is formed at the center of the mask stage 16 to grasp the periphery of the photomask 1. Further, it can be moved in the directions of arrows B and C shown in Fig. 3 by the driving means 23 such as a motor.

Among the first to third observation windows 12A to 12C of the photomask 1 held on the mask stage 16, the transfer means (the second observation window 12B in FIG. 3) 13, a line camera 17 is provided. The line camera 17 transmits the TFT substrate 8 from below and picks up the surface of the TFT substrate 8 and the alignment mark 4 of the photomask 1 and outputs such a one dimensional image so that a plurality of light receiving elements are arranged in a straight line (See FIG. 5), and the central axis in the longitudinal direction of the light receiving portion 24 is aligned with the alignment mark 4 (FIG. 5) selected from the first to third alignment marks 4A to 4C. (In Fig. 3, the case where the second alignment mark 4B is selected) is aligned with the center line of the intersecting direction with the substrate transport direction.

An illuminating light source 25 is provided above the mask stage 16 in opposition to the line camera 17 so that the imaging position of the line camera 17 can be illuminated.

Alignment means (18) is provided so that the mask stage (16) can be moved in the direction intersecting the substrate carrying direction. This alignment means 18 is for aligning the TFT substrate 8 with the photomask 1 and is constituted by, for example, a linear motor, an electromagnetic actuator, or a rail and a motor.

The control means 19 is connected to the conveying means 13, the laser light source 14, the mask stage 16, the line camera 17 and the alignment means 18. The control means 19 moves the photomask 1 in the substrate transfer direction in accordance with a plurality of predetermined annealing target positions set on the TFT substrate 8 so that one of the first to third alignment marks 4A to 4C The alignment mark 4 is selected and alignment is performed between the alignment mark 4 and the preset reference position on the TFT substrate 8 and then the laser light 21 is irradiated on the photomask 1 The annealing target positions on the substrate are subjected to an annealing process so that the image processing section 26, the memory 27, the arithmetic section 28, the conveying means drive controller 29, A stage drive controller 30, an alignment means drive controller 31, a laser light source drive controller 32, and a control unit 33. [

At this time, the image processing section 26 performs real-time processing of the one-dimensional image picked up by the line camera 17 to detect a change in luminance in the longitudinal direction of the elongated light receiving section 24 of the line camera 17, The positions of the reference positions set on the data line 6 of the TFT substrate 8 and the pair of fine lines 4a and 4b of the alignment mark 4 of the photomask 1 are detected, (See Fig. 2) intersecting the substrate conveyance direction of the draw-in marks 9 of the TFT substrate 8 from the change in brightness in the substrate conveyance direction in the output.

The memory 27 stores the dimensions L 2 and L 3 (see FIG. 1) set in the photomask 1 , the dimensions L 1 and P 1 (see FIG. 2) set in the TFT substrate 8, The target values Ds 1 and Ds 2 of the alignment corresponding to the first to third alignment marks 4A to 4C and the thin line 9a intersecting the substrate carrying direction of the draw- The target value Ls of the distance by which the TFT substrate 8 moves until the laser light source 14 is turned on is detected and the calculation result in the calculating unit 28 described later is temporarily stored . Further, the target value (Ds 1) of the alignment is an alignment mark (4) the reference position, and the draw of the substrate - a desired value of the distance between the center position of the mark 9, a target value (Ds 2) Is a target value of the distance between the reference position of the alignment mark 4 and the reference position set on the substrate, for example, the center position of the specific data line 6.

The arithmetic unit 28 calculates the distance D between the reference position of the TFT substrate 8 detected by the image processing unit 26 and the reference position of the selected alignment mark 4 in the photomask 1 And calculates the moving distance L of the TFT substrate 8 on the basis of the output of the position sensor of the conveying means 13.

The conveying means drive controller 29 controls driving of the conveying means 13 by pulses of a constant period so that the TFT substrate 8 is conveyed at a predetermined speed.

The mask stage drive controller 30 moves the mask stage 16 in the directions of arrows B and C in FIG. 3 to detect one of the first to third alignment marks 4A to 4C formed on the photomask 1 To select the alignment mark 4 and to drive the driving means 23 provided in the mask stage 16.

The alignment means drive controller 31 calculates the distance D between the reference position of the TFT substrate 8 calculated by the arithmetic unit 28 and the reference position of the selected alignment mark 4 in the photomask 1 And the target values Ds 1 and Ds 2 of the alignment read from the memory 27 and drives the alignment means 18 so as to align them so that the photomask 1 is moved in the direction crossing the substrate transfer direction .

Further, the laser light source drive controller 32 controls the turning on and off of the laser light source 14. In addition, the control unit 33 integrally controls all of the components so that they operate appropriately.

Next, the operation of the thus configured laser annealing apparatus will be described.

First, the necessary information is stored in the memory 27 of the control means 19 to perform initial setting. Further, the driving means 23 the control means 19 masks is driven by a stage drive controller 30, the mask stage 16 is a distance L 2 by an arrow B direction shown in Fig. 3 of the mask stage 16 . Thereby, the first observation window 12A is positioned above the line camera 17, and the first alignment mark 4A is selected.

At this time, based on the one-dimensional image picked up by the line camera 17, from the luminance change in the longitudinal direction of the elongated light receiving part 24 of the line camera 17 in the image processing part 26, The distance between the fine lines 4a and 4c and the distance between the fine lines 4c and 4b in the arithmetic unit 28 are detected by detecting the positions of the pair of fine wires 4a and 4b and the slanted fine wires 4c of the wire 4A, (Fine adjustment) of the movement of the mask stage 16 in the substrate conveying direction by the mask stage drive controller 30 so that the two distances become equal to each other and the light receiving section 24 of the line camera 17 And the center line of the first alignment mark 4A of the photomask 1 in the direction intersecting with the substrate transport direction.

Next, the transfer means 13 is so formed that the TFT substrate 8 on which the thin film of amorphous silicon is formed on the surface is placed so that the draw-in mark 9 shown in Fig. 2 becomes the head side in the substrate transfer direction indicated by arrow A in Fig. And is conveyed at a constant speed in the direction of the arrow A in a state of being mounted on the upper surface of the air stage 20.

The TFT substrate 8 is transported and when the draw-in mark 9 reaches the lower side of the first observation window 12A formed on the photomask 1, the imaging by the line camera 17 is started, The picked-up image is output from the image pick-up unit 17 at regular time intervals. The picked-up image is input to the image processing section 26 of the control means 19 and subjected to image processing and is subjected to image processing from the change in luminance in the longitudinal direction of the elongated light receiving section 24 of the line camera 17, The positions of the fine lines 9b (see Fig. 2) parallel to the substrate transport direction of the draw-in marks 9 of the first alignment mark 4A and the positions of the pair of fine lines 4a and 4b of the first alignment mark 4A are detected.

The arithmetic unit 28 corrects the positional data of the thin line 9b of the draw-in mark 9 detected by the image processing unit 26 and the positional data of the pair of fine lines 4a and 4b of the first alignment mark 4A, Between the center line parallel to the substrate transport direction of the fine line 9b of the draw-in mark 9 and the reference position (for example, the center position) of the first alignment mark 4A, And compares the calculated distance Ds with the target value Ds 1 of the alignment stored in the memory 27.

Next, the alignment means drive controller 31 drives and controls the alignment means 18 so that the distance D and the alignment target value Ds 1 are in agreement with each other so that the photomask 1 is moved in the directions indicated by arrows E, F direction, and the TFT substrate 8 and the photomask 1 are aligned in advance.

The image processing section 26 processes the one-dimensional image picked up by the line camera 17 and generates a thin line 9a crossing the substrate transport direction of the draw-in mark 9 from the luminance change in the substrate transport direction, . The arithmetic unit 28 calculates the distance L of the movement of the TFT substrate 8 after detecting the thin line 9a based on the output of the position sensor provided on the carrying means 13, L) and the target value Ls (Ls = L 1 + L 3 in this embodiment) of the moving distance of the TFT substrate 8 stored in the memory 27 are compared with each other, The intersection of the plurality of data lines 6 and the plurality of gate lines 7 of the TFT substrate 8 matches the center of the plurality of mask patterns 2 of the photomask 1, To the laser light source drive controller (32).

The laser light source driving controller 32 turns on the laser light source 14 for a predetermined time upon receipt of the lighting instruction. 7, the laser light 21 is irradiated to the intersection portion of the data line 6 and the gate line 7 of the TFT substrate 8 by the microlenses 3 of the photomask 1, And the amorphous silicon film of the intersection is annealed to be polysilicon.

Thereafter, on the basis of the picked-up image picked up by the line camera 17 as described above, the data line of the TFT substrate 8 close to the predetermined reference position, for example, the light receiving portion 24 of the line camera 17 6 are selected as the specific data lines 6 and the position of the specific data line 6 and the positions of the pair of fine lines 4a, 4b of the first alignment mark 4A are detected. The distance D between the center line of the specific data line 6 and the reference position (e.g., the center position) of the first alignment mark 4A is calculated and the distance D is calculated by the memory 27 ) target value of the stored alignment (Ds 2) and by driving the alignment means (18) so as to conform to move in the arrow E, F directions indicating the photo mask 1 in Fig. 6, TFT substrate 8 on the photomask (1). Thereby, the photomask 1 can be made to follow the moving TFT substrate 8.

7, the pair of fine wires 4a and 4b of the first alignment mark 4A are parallel to the substrate transport direction (arrow A direction) of the pixel 5 of the TFT substrate 8 And is located on a center line parallel to the direction of the arrow A which is the farthest from one edge. Therefore, the pair of fine lines 4a and 4b can be easily detected without interfering with the data line 6 disposed along the edge of the pixel 5. [0050] Therefore, the reference position of the first alignment mark 4 can be easily calculated, and the photomask 1 can be accurately followed on the moving TFT substrate 8.

In this manner, each time the TFT substrate 8 moves by 2P 1 (P 1 is the arrangement pitch of the pixels 5 in the substrate transport direction) while the photomask 1 is following the moving TFT substrate 8, And the laser source 14 is turned on by the light source drive controller 32 for a predetermined time. Thereby, the amorphous silicon film of all the target annealing positions 34 on the TFT substrate 8 can be annealed to polysilicon.

Next, a case where the laser annealing process is performed on the TFT substrate 8 having the different annealing target positions 34 using the same photomask 1 will be described.

In this case, when the annealing target position 34 of the pixel 5 is located on the gate line 7 that coincides with the center line parallel to the substrate transport direction (the direction of the arrow A) as shown in Fig. 8, a mask (1) a good haejumyeon moved by the substrate transport direction (arrow a direction) and the half pitch of the arrangement pitch P 2 of the pixel 5 in the same direction in the cross direction (P 2/2).

However, in this case, as shown in Fig. 8, the pair of fine lines 4a and 4b of the first alignment mark 4A interfere with the data line 6 of the TFT substrate 8, The thin wires 4a and 4b can not be separated from the data line 6 and can not be detected. Therefore, the reference position of the first alignment mark 4A can not be calculated, and the photomask 1 can not follow the moving TFT substrate 8.

In this case, in the present invention, the mask stage drive controller 30 drives the drive means 23 to move the mask stage 16 by the distance L 2 in the direction of the arrow C shown in FIG. 3, The alignment mark 4 detected by the alignment mark 17 is changed from the first alignment mark 4A to the second alignment mark 4B. At this time, the second alignment marks (4B) is, because the installation and is shifted by a first alignment mark (4A) in a direction intersecting the board conveyance direction (arrow A direction) D 1 = P 2/2 , the second alignment marks The pair of fine lines 4a and 4b of the first alignment mark 4B are positioned on the center line parallel to the substrate transport direction (arrow A direction) of the pixel 5 as shown in Fig. 8, Can be easily detected. Therefore, the photomask 1 can be made to follow the moving TFT substrate 8 by using the second alignment mark 4B, and the same target photomask 1 can be used for the TFT substrate 8, It is possible to perform the annealing process with a high positional accuracy with respect to the substrate 8 as well.

When the target position different from any one of the annealing target positions 34 is to be annealed, the third alignment mark 4C formed on the photomask 1 may be selected corresponding to the target position. Even in this case, a pair of fine lines 4a and 4b of the third alignment mark 4C are aligned in the substrate transport direction of the pixel 5 in the state in which the TFT substrate 8 and the photomask 1 are aligned The pair of fine wires 4a and 4b and the data line 6 do not interfere with each other and the detection of the third alignment mark 4C can be easily performed because the pair of fine wires 4a and 4b are located in the middle of the pixel 5, So that the photomask 1 can follow the moving TFT substrate 8.

In the above embodiment, the case where the substrate is the TFT substrate 8 has been described. However, the present invention is not limited to this. The substrate may be formed by irradiating a plurality of positions on the substrate with laser light 21, May be any one as long as it is intended to anneal the thin film deposited on the substrate.

In the above embodiment, the case where the photomask 1 of the present invention is applied to the laser annealing apparatus has been described. However, the present invention is not limited to the laser annealing apparatus, and an exposure apparatus for exposing the photosensitive material coated on the substrate Can be applied. In this case, the laser light source 14 of the laser annealing apparatus may be changed to a light source for exposure comprising a xenon lamp that emits ultraviolet rays, an ultra-high pressure mercury lamp, or a laser light source of ultraviolet radiation. Thereby, the photomask (1) is moved in the substrate transfer direction according to a plurality of exposure target positions previously set on the substrate to select one alignment mark (4) from among the plurality of alignment marks (4) A plurality of exposure target positions on the substrate can be exposed by irradiating the photomask 1 with ultraviolet rays after the reference position of the substrate 4 is aligned with the preset reference position on the substrate.

In this case, the mask pattern row of the photomask 1 is formed in a plurality of rows, and the exposure target position on the head side in the substrate transfer direction is set to the angle of the mask pattern row in front of the substrate transfer direction Ultraviolet rays are irradiated for a predetermined time every time the substrate is moved by a distance equal to the arrangement pitch P 1 of the mask pattern 2 in the substrate transport direction , The exposure target position can be subjected to multiple exposures. Therefore, the burden of the light source can be reduced by lowering the power of the exposure light source, and the life of the light source can be lengthened.

In the above description, the case where the photomask 1 side is moved in the substrate transport direction and the cross direction when positioning the photomask 1 and the substrate has been described, but the present invention is not limited thereto But the substrate side may be moved, or both the photomask 1 and the substrate may be moved.

1: Photomask
2: mask pattern
3: Micro lens
4: Alignment mark
4A: First alignment mark
4B: Second alignment mark
4C: Third alignment mark
4a, 4b, 4c: thin lines of alignment marks
5: pixel (pattern formed on the substrate)
8: TFT substrate (substrate)
16: Mask stage
17: line camera
18: Alignment means

Claims (10)

1. A photomask for selectively irradiating light onto a plurality of positions on a substrate in which a plurality of patterns are formed on a surface of the substrate in a matrix with a constant arrangement pitch and are transported in a predetermined direction,
A plurality of mask patterns formed at predetermined constant pitches in a direction intersecting with the carrying direction of the substrate,
And a pair of thin lines formed parallel to the substrate transport direction and having an interval equal to an integral multiple of the arrangement pitch of the plurality of patterns formed on the substrate in the substrate transport direction and the cross direction, And a predetermined reference position between the pair of fine lines is deviated from a predetermined distance only in a direction intersecting with the substrate conveying direction A plurality of alignment marks
Wherein the photomask is a photomask. 2. The apparatus according to claim 1, wherein, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned, out of the plurality of alignment marks, a pair of thin lines of the selected alignment mark And is arranged so as to coincide with a center line parallel to the substrate transport direction of the pixels. A photomask according to claim 1, wherein a plurality of microlenses are formed on the substrate side in correspondence with the respective mask patterns. The photomask according to any one of claims 1 to 3, wherein the plurality of mask patterns are formed in a matrix in a substrate transfer direction and a crossing direction thereof at a constant arrangement pitch. A plurality of patterns formed on a surface of the substrate in a matrix with a constant arrangement pitch and aligned in a predetermined direction and a photomask disposed opposite to the substrate are aligned and laser light is irradiated to a plurality of positions on the substrate A laser annealing apparatus for selectively annealing a thin film formed on a substrate,
A plurality of mask patterns formed at predetermined constant pitches in a direction intersecting with the carrying direction of the substrate to allow the laser light to pass therethrough and an interval equal to an integral multiple of the array pitches of the plurality of patterns formed on the substrate in the substrate transport direction And a pair of fine lines formed in parallel with the substrate transfer direction and arranged at a distance from the plurality of mask patterns at positions opposite to the substrate transfer direction at a predetermined distance from each other in the substrate transfer direction, A photomask in which a plurality of alignment marks formed so as to be shifted from each other by a predetermined distance in a direction intersecting with the substrate transport direction is formed between a pair of fine lines, And a plurality of alignment marks A mask stage in which one alignment mark can be selected,
A line camera arranged in such a manner that a center axis in the longitudinal direction of the light receiving section in the form of a thin line is aligned with a center line in the direction crossing the substrate transport direction of the alignment mark selected from the plurality of alignment marks of the photomask,
And alignment means for relatively moving the substrate and the photomask in the direction intersecting with the substrate transport direction so that the positional relationship between the reference position of the selected alignment mark and the reference position set in advance on the substrate is determined in advance Characterized in that the laser annealing device is a laser annealing device. 6. A method according to claim 5, wherein, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned among the plurality of alignment marks provided on the photomask, Is arranged so as to coincide with a center line parallel to a substrate transport direction of pixels provided on the substrate. The laser annealing apparatus according to claim 5 or 6, wherein the photomask has a plurality of microlenses formed on the substrate side corresponding to the mask patterns. A plurality of patterns are formed on a surface of the substrate in a matrix with a constant arrangement pitch and a substrate transported in a predetermined direction is aligned with a photomask opposed to the substrate so that ultraviolet light is selectively emitted to a plurality of positions on the substrate And exposing the photosensitive material coated on the substrate,
A plurality of mask patterns formed in a predetermined arrangement pitch in a direction intersecting with the carrying direction of the substrate and allowing ultraviolet rays to pass therethrough and a plurality of patterns formed on the substrate having an interval equal to an integral multiple of the array pitch in the direction crossing the substrate transport direction And a pair of thin lines formed in parallel with the substrate transport direction and arranged at a distance from the plurality of mask patterns at a position opposite to the substrate transport direction at a predetermined distance from each other in the substrate transport direction, The photomask having a plurality of alignment marks formed in a state in which a predetermined reference position previously set between fine lines of the pair is deviated from each other by a predetermined distance in a direction intersecting with the substrate transport direction is held and the photomask is held in the substrate transport direction And a plurality of alignment marks And a plurality of alignment marks selected from a plurality of alignment marks of the photomask, wherein the center axis of the line sensor intersects the center line of the alignment mark in the direction crossing the substrate conveying direction, Wow,
And alignment means for relatively moving the substrate and the photomask in the direction crossing the substrate conveyance direction so that the positional relationship between the reference position of the selected alignment mark and the reference position set in advance on the substrate is in a predetermined relationship And the exposure device. 9. The apparatus according to claim 8, wherein, in a state in which the reference position of the selected one alignment mark and the reference position set on the substrate are aligned among the plurality of alignment marks provided on the photomask, Is arranged so as to coincide with a center line parallel to a substrate transport direction of pixels provided on the substrate. The exposure apparatus according to claim 8 or 9, wherein the photomask has a plurality of microlenses formed on the substrate side corresponding to the mask patterns.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008216593A (en) 2007-03-02 2008-09-18 V Technology Co Ltd Exposure method and exposure device
JP2009251290A (en) 2008-04-07 2009-10-29 V Technology Co Ltd Exposure apparatus
WO2010140505A1 (en) 2009-06-03 2010-12-09 株式会社ブイ・テクノロジー Laser annealing method and laser annealing apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040210B2 (en) * 1999-06-30 2008-01-30 株式会社東芝 Exposure method, reticle, and semiconductor device manufacturing method
TWI227913B (en) * 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
JP4754924B2 (en) * 2005-10-07 2011-08-24 株式会社ブイ・テクノロジー Exposure equipment
JP4992967B2 (en) * 2007-03-15 2012-08-08 富士通株式会社 Display panel, multilayer display element and manufacturing method thereof
JP4897006B2 (en) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． Method for providing alignment mark, device manufacturing method, and lithographic apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008216593A (en) 2007-03-02 2008-09-18 V Technology Co Ltd Exposure method and exposure device
JP2009251290A (en) 2008-04-07 2009-10-29 V Technology Co Ltd Exposure apparatus
WO2010140505A1 (en) 2009-06-03 2010-12-09 株式会社ブイ・テクノロジー Laser annealing method and laser annealing apparatus

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