201214022 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種會追隨往一定方向搬送中之基 板並使光線選擇性地照射在基板上的複數位置處之光 單’詳而言之係關於一種光罩、使用該光罩之雷射退火 震置及曝光裝置’即便是將光線照射在同類基板之偏移 至與基板搬送方向呈交又方向的位置處之情況，仍可良 好地追隨移動中的基板。 【先前技術】 習知的這類光罩係具備有以一定的配列間距而形 成於與基板搬送方向呈交叉方向來讓光線通過之複數 罩幕圖案；及相對於複數罩幕圖案而於基板搬送方向的 相反方向相隔一定距離之位置處所形成之一個對位記 號’其中該對位記號的構造係具備有一對細線，該一對 細線係具有相等於基板上所設置之複數圖案之與基板 搬送方向呈交叉方向之配列間距的整數倍之間隔，而平 行地形成於基板搬送方向（參酌例如日本特開 2008-216593 號公報）。 然而’上述習知的光罩’由於對位記號之平行於基 板搬送方向的一對細線的間隔係相等於基板上所設置 之複數圖案之與基板搬送方向呈交叉方向之配列間距 的整數倍尺寸，因此將光線照射在同類基板之偏移至與 基板搬送方向呈交叉方向的位置處時，對位記號的上述 3 201214022 一對細線便會與基板上之圖案之平行於基板搬送方向 的邊緣部干涉而難以進行檢測，因而會有無法正確地檢 測出對位S己號的基準位置之情況。因此便會有光罩對基 板的追隨性能降低，而無法將光線高精確度地照射在基 板上的目標位置之虞。 【發明内容】 是以，本發明係因應於此種問題點，其目的在於提 供一種光罩、使用該光罩之雷射退火裝置及曝光裝置， 即便是將光線照射在同類基板之偏移至與基板搬送方 向呈父叉方向的位置處之情況，仍可良好地追隨移動中 的基板。 為達成上述目的，第1發明之光罩係於表面以一定 的配列間距設置有陣列狀複數圖案，並將光線選擇性地 照射在往一定方向搬送中之基板上的複數位置處，其係 具備有：複數罩幕圖案，係以一定的配列間距形成於與 該基板之搬送方向呈交叉之方向，來讓光線通過；及複 數對位記號，其構造係具備有一對細線，相對於該複數 罩幕圖案於基板搬送方向相互地相距一定距離而配置 在與该基板搬送方向呈相反側之位置處，且於該一對細 線間所預先設定之基準位置係朝與該基板搬送方向呈 交叉之方向相互地偏移預設距離之狀態下所形成，其中 該一對細線係具有相等於該基板上所設置之複數圖案 之與基板搬送方向呈交叉方向之配列間距的整數倍之 4 201214022 間隔，而平行地形成於該基板搬送方向。 藉由上述結構，將光線照射在同類基板之偏移至與 基板搬送方向呈交叉方向的位置處之情況，係從於基板 搬送方向相互地相隔一定距離所配置之複數對位記號 當中選擇一個適當的對位記號，來減少對位記號之平行 於基板搬送方向的一對細線與基板所設置圖案之平行 於基板搬送方向的兩邊緣部的干涉。藉此，即便是將光 線照射在同類基板之偏移至與基板搬送方向呈交叉方 向的位置處之情況，仍可藉由從複數對位記號當中選擇 一個適當的對位記號，來減少該所選擇之對位記號的一 對細線與基板所設置圖案之平行於基板搬送方向的兩 邊緣部的干涉。於是，便可容易地檢測出所選擇之對位 記號的一對細線，從而可容易地計算對位記號的基準位 置。是以，便可使用從複數對位記號當中所選擇之一個 對位記號’來使光罩良好地追隨移動中的基板。 又，於該光罩所設置之該複數對位記號當中所選擇 之一個對位記號的基準位置與該基板所設定之基準位 置經對位後的狀態下，該所選擇之對位記號的一對細線 係配置為大致對齊於該基板所設置像素之平行於基板 搬送方向的中心線。藉此，於各對位記號當中所選擇之 一個對位記號的基準位置與基板所設定之基準位置經 對位後的狀態下，將上述所選擇之對位記號的一對細線 配置為大致對齊於基板所設置像素之平行於基板搬送 方向的中心線，以更加減少該一對細線與基板所設置圖 5 201214022 案之平行於基板搬送方向的兩邊緣部的干涉。於是，由 於從複數對位記號當中所選擇之對位記號的一對細線 係位在自基板所設置圖案之平行於基板搬送方向的兩 邊緣部相距最遠之上述圖案的略中心位置處，故可避免 一對細線與上述圖案之兩邊緣部的干涉，從而可更容易 地檢測出上述一對細線。 再者，對應於該各罩幕圖案而於該基板侧形成有複 數微鏡片。藉以利用對應於各罩幕圖案而形成於基板側 之複數微鏡片來使光線聚光在基板上。從而可提高光的 利用效率。 然後，S亥複數罩幕圖案係以一定的配列間距陣列狀 地形成於基板搬送方向及其交叉方向。藉以透過以一定 的配列間距陣列狀地形成於基板搬送方向及其交叉方 向之複數罩幕圖案，來使光線照射在基板上的複數位置 處。於是，便可擴大光線的照射區域，從而可縮短例如 雷射退火處理步驟或曝光步驟的時間。 又，第2發明之雷射退火裝置係進行表面以一定的 配列間距設置有陣列狀複數圖案且往一定方向搬送中 之基板，與和該基板呈對向配置之光罩的對位，來將雷 射光選擇性地照射在該基板上之複數位置處，以對形成 於該基板之薄膜進行退火處理，其係具備有：光罩台， 係保持設置有複數罩幕圖案與複數對位記號之光罩f且 可使讓光罩往基板搬送方向移動來從該複數對位記號 當t選擇一個對位記號；該複數罩幕圖案係以一定的°配 6 201214022 列間距形成於與該基板之搬送方向呈交叉之方向來讓 雷射光通過；該複數對位記號的構造係具備有一對細 線，相對於該複數罩幕圖案於基板搬送方向相互地相距 一定距離而配置在與該基板搬送方向呈相反側之位置 處，且於該一對細線間所預先設定之基準位置係朝與該 基板搬送方向呈交叉之方向相互地偏移預設距離之狀 態下所形成，其令該一對細線係具有相等於該基板上所 設置之複數圖案之與基板搬送方向呈交叉方向之配列 間距的整數倍之間隔，而平行地形成於該基板搬送方 向；線型照相機，係配置為細線狀感光部的長邊中心軸 對齊於從該光罩的複數對位記號當中所選擇之對位記 號之與該基板搬送方向呈交叉方向的中心線；及對位機 構’係使該基板與該光罩朝該基板搬送方向的交叉方向 相對移動’來使該所選擇之對位記號的基準位置與該基 板所預先設定之基準位置的位置關係成為預先設定之 關係。 藉由上述結構，將雷射光照射在同類基板之偏移至 與基板搬送方向呈交叉方向的位置處來進行退火處理 之情況’係使光罩台往基板搬送方向移動，從於基板搬 送方向相互地相隔一定距離所配置之複數對位記號當 中選擇一個適當的對位記號，利用線型照相機來拍攝對 位記號之平行於基板搬送方向的一對細線與基板上的 基準位置，根據該拍攝影像並藉由對位機構來使基板與 光罩往基板搬送方向的交叉方向相對移動，以使上述對 7 201214022 位記號的基準位置與基板的基準位置的位置關係成為 預先設定之關係。藉此，即便是將雷射光照射在同類基 板之偏移至與基板搬送方向呈交叉方向的位置處來進 行退火處理之情況，仍可藉由從複數對位記號當中選擇 一個適當的對位記號，來減少該所選擇之對位記號的一 對細線與基板所設置圖案之平行於基板搬送方向的兩 邊緣部的干涉。於是，便可容易地檢測出所選擇之對位 S己號的一對細線，從而可容易地計算對位記號的基準位 置。是以，便可使用從複數對位記號當中所選擇之一個 對位記號，來使光罩良好地追隨移動中的基板。 再者，於該光罩所設置之該複數對位記號當中所選 擇之一個對位記號的基準位置與該基板所設定之基準 位置經對位後的狀態下’該所選擇之對位記號的一對細 線係配置為大致對齊於該基板所設置像素之平行於基 板搬送方向的中心線。藉此，於各對位記號當中所選擇 之一個對位記號的基準位置與基板所設定之基準位置 經對位後的狀態下，係將上述所選擇之對位記號的一對 細線配置為大致對齊於基板所設置像素之平行於基板 搬送方向的中心線，來更加減少該一對細線與基板所設 置圖案之平行於基板搬送方向的兩邊緣部的干涉。於 疋，由於攸光罩所設置之複數對位記號當中所選擇之對 位記號的一對細線係位在自基板所設置圖案之平行於 基板搬送方向的兩邊緣部相距最遠之上述圖案的略中 心位置處，故可避免一對細線與上述圖案之兩邊緣部的 8 201214022 干涉’從而可更容易地檢測出上述一對細線。於是，便 可更容易地計算光罩的基準位置，來確實地進行光罩與 基板的對位’從而可將雷射光向精確度地照射在基板上 所設定之目標位置處。 然後，該光罩係對應於該各罩幕圖案而於該基板侧 形成有複數微鏡片。藉以利用對應於各罩幕圖案而形成 於基板側之複數微鏡片來使雷射光聚光在基板上。於 疋，便可減少雷射光源的功率，從而可減輕雷射光源的 負擔而延長光源壽命。 又，第3發明之曝光裝置係進行表面以一定的配列 間距設置有陣列狀複數圖案且往一定方向搬送中之基 板’與和該基板呈對向配置之光罩的對位，來將紫外線 選擇性地照射在該基板上之複數位置處，以使該基板上 所塗佈之感光材料曝光，其係具備有： 光罩台，係保持設置有複數罩幕圖案與複數對位記 號之光罩，且可使該光罩往基板搬送方向移動來從該複 數對位記號當中選擇一個對位記號，該複數罩幕圖案係 以一定的配列間距形成於與該基板之搬送方向呈交叉 之方向，來讓紫外線通過；該複數對位記號的構造係具 備有一對細線，相對於該複數罩幕圖案於基板搬送方向 相互地相距一定距離而配置在與該基板搬送方向呈相 反側之位置處，且於該一對細線間所預先設定之基準位 置係朝與該基板搬送方向呈交又之方向相互地偏移預 設距離之狀態下所形成，其中該一對細線係具有相等於 ϋ 9 201214022 該基板上所設置之複數圖案之與基板搬送方向呈交叉 方向之配列間距的整數倍之間隔，而平行地形成於該基 板搬送方向； 線型照相機，係配置為細線狀感光部的長邊中心軸 對齊於從該光罩的複數對位記號當中所選擇之對位記 號之與該基板搬送方向呈交叉方向的中心線；及 對位機構，係使該基板與該光罩朝該基板搬送方向 的交叉方向相對移動，來使該所選擇之對位記號的基準 位置與該基板所預先設定之基準位置的位置關係成為 預先設定之關係。 藉由上述結構’將紫外線照射在同類基板之偏移至 與基板搬送方向呈交叉方向的位置處來進行曝光之情 況’係使光罩台往基板搬送方向移動，從於基板搬送方 向相互地相隔一定距離所配置之複數對位記號當中選 擇一個適當的對位記號，利用線型照相機來拍攝對位記 號之平行於基板搬送方向的一對細線與基板上的基準 位置’根據該拍攝影像並藉由對位機構來使基板與光罩 往基板搬送方向的交又方向相對移動，以使上述對位記 號的基準位置與基板的基準位置的位置關係成為預先 設定之關係。藉此，即便是將紫外線照射在同類基板之 偏移至與基板搬送方向呈交叉方向的位置處來進行曝 光之情況，仍可藉由從複數對位記號當中選擇一個適當 的對位記號，來減少該所選擇之對位記號的一對細線i 基板所設置圖案之平行於基板搬送方向的兩邊緣部的 201214022 干涉。於是，便可容易地檢測出所選擇之對位記號的一 對細線，從而可容易地計算對位記號的基準位置。是 以，便可使用從複數對位記號當中所選擇之一個對位記 號，來使光罩良好地追隨移動中的基板。 再者，於該光罩所設置之該複數對位記號當中所選 擇之一個對位記號的基準位置與該基板所設定之基準 位置經對位後的狀態下，該所選擇之對位記號的一對細 線係配置為大致對齊於該基板所設置像素之平行於基 板搬送方向的中心線。藉此，於各對位記號當中所選擇 之一個對位記號的基準位置與基板所設定之基準位置 經對位後的狀態下，係將上述所選擇之對位記號的一對 細線配置為大致對齊於基板所設置像素之平行於基板 搬送方向的中心線，來更加減少該一對細線與基板所設 置圖案之平行於基板搬送方向的兩邊緣部的干涉。於 疋，由於從光罩所設置之複數對位記號當中所選擇之對 位記號的一對細線係位在自基板所設置圖案之平行於 基板搬送方向的兩邊緣部相距最遠之上述圖案的略中 心位置處，故可避免一對細線與上述圖案之兩邊緣部的 干涉，從而可更容易地檢測出上述一對細線。於是，便 可更谷易地汁异光罩的基準位置，來確實地進行光罩與 基板的對位，從而可將紫祕高精確度地縣在基板1 所設定之目標位置處。 、然後，該光罩係對應於該各罩幕圖案而於該基板侧 形成有複數微鏡湘對應於各罩幕圖案而形成 11 201214022 於基板側之複數微鏡片來使紫外線聚光在基板上。於 是’便可減少曝光用光源的功率，從而可減輕曝光用光 源的負擔而延長光源壽命。 【實施方式】 以下’參酌添附圖式詳細說明本發明之實施形態。 圖1係顯示本發明光罩的實施形態之圖式，（a)為俯視 圖’（b)為⑷之X-X線剖面圖。該光罩1係於表面以一 定的配列間距設置有陣列狀複數圖案，並將光線選擇性 地照射在往一定方向搬送中之基板上的複數位置，其具 備有複數罩幕圖案2、複數微鏡片3及複數對位記號4。 此外，此處所使用之基板係以配列間距Ρι於圖2 之箭頭A所示的基板搬送方向，且以配列間距於基 板搬送方向的交叉方向配置有複數圖案（以下稱為「像 素5」）’其係沿著各像素5之平行於基板搬送方向的邊 緣部而形成有例如資料線(dataline)6，沿著各像素5之 與基板搬送方向呈交叉的邊緣部則形成有例如閘極線 (gate line)7之TFT基板8。又，基板搬送方向前側的顯 示區域外A没置有中心位置與基板搬送方向前侧的閘 極線2相隔距離1^之略十字狀的刻痕記號9,以便能夠 進行光罩1與TFT基板8的預對位。此處，若無刻痕 記號9時’便會無法檢測出TFT基板8側的對位基準(例 2預先。又疋的特定資料線6)，而有錯誤地檢測出別的資 料線6 ’便往像素5之基板搬送方向的交叉方向偏移同 12 201214022 方向之配列間距P 2的數間距量來進行對位之是， 藉由於TFT基板8設置有上_痕記號、便可進行光 罩1與TFT基板8的預對位，來容易地檢測出上述特 定貧料線6。 上述複數罩幕圖案2如圖1所示，係用以使光線選 擇性地照射在TFT基板8上所預先設定的複數位置（以 下稱為「光照射目標位置」）處，其係形成於透明基板 10表面所設置之遮光膜11而能夠讓光線通過之一定形 狀的開口，且係以相等於TFT基板8上所設置之複數 像素5之配列間距Pi、p2的配列間距，而陣列狀地形成 於基板搬送方向及其交叉方向。本實施形態中，上述複 數罩幕圖案2係以與基板搬送方向呈交叉之2列罩幕圖 案列2A、2B來顯示。 上述透明基板10的内面（TFT基板8側）如圖1(b) 所示，係設置有複數微鏡片3。該複數微鏡片3係用以 使光線聚光在TFT基板8上之凸透鏡，而配置為會使 光軸對齊於各罩幕圖案2的中心。 相對於上述複數罩幕圖案2而與箭頭A所示之基板 搬送方向呈相反側之位置處所形成的第1〜第3觀看窗 12A、12B、12C内係分別設置有第1、第2及第3對位 記號4A、4B、4C。該第1〜第3對位記號4A〜4C係用 以使光罩1 一邊蛇行一邊追隨移動中的TFT基板8而 移動’來進行上述複數罩幕圖案2與TFT基板8上的 光照射目標位置之對位，其係配置為於基板搬送方向相 13 201214022 互地相隔距離L2，且係形成為第丨對位記號4a之盥基 板搬送方向呈交叉的巾心|績基板搬送方向前侧之罩土 幕圖案列2A的長邊中心軸構成了距離L3。 再者’第1〜第3對位記號4A〜4C的構造係分別於 一對細線4a、4b間設置有與基板搬送方向斜向地交叉 之-根細線4 e ’該_對、纟哄4 a、4 b係具有相等於複數 像素5之與基板搬送方向呈交叉方向之配列間距匕的 整數倍之間隔nP2(n為1以上的整數)且平行地形成於基 板搬送方向，第2及第3對位記號4B、4C的對位基準 位置(例如一對細線4a、4b間的中點位置)係形成為以第 1對位記號4A的基準位置為基準而往基板搬送方向的 交叉方向偏移距離Di、D2之狀態。 此情況下，與基板搬送方向斜向地交叉之上述一根 細線4c當使用本發明之光罩1於後述雷射退火裝置或 曝光裝置時，係被用來使光罩1之對位記號4之與基板 搬送方向呈父叉的中心線能夠正確地對位於為了檢測 光罩1的基準位置及TFT基板8的基準位置而設置之 線型照相機17(參酌圖5)之細長狀感光部24的長邊中心 軸。具體來說係根據線型照相機17所拍攝之一維影像 來檢測對位記號4之上述一對細線如、4b及斜向細線 4c的位置’决真細線4a、4c間之距離及細線4c、4b間 之距離，並使光罩1在基板搬送方向移動來使兩距離相 等，以進行線型照相機17與光罩1的對位。201214022 VI. Description of the Invention: [Technical Field] The present invention relates to a light sheet that follows a substrate that is transported in a certain direction and selectively illuminates light at a plurality of positions on the substrate. Regarding a reticle, a laser annealing and exposure apparatus using the reticle, even if the light is irradiated on the same substrate to a position that is in the direction of the substrate transport direction, it can well follow The substrate in motion. [Prior Art] A conventional mask of this type is provided with a plurality of mask patterns formed at a certain arrangement pitch in a direction crossing the substrate transport direction to allow light to pass therethrough; and transporting on the substrate with respect to the plurality of mask patterns a aligning mark formed at a position separated by a distance from the opposite direction of the direction, wherein the structure of the aligning mark has a pair of thin wires having a plurality of patterns corresponding to the substrate and the substrate conveying direction In the case of the interval of the integral multiple of the arrangement pitch in the cross direction, it is formed in parallel in the substrate transfer direction (for example, JP-A-2008-216593). However, the above-mentioned conventional photomask has an interval of a pair of thin lines parallel to the substrate transport direction of the alignment mark equal to an integral multiple of the arrangement pitch of the plurality of patterns provided on the substrate in the direction intersecting the substrate transport direction. Therefore, when the light is irradiated to the position of the same substrate in the direction intersecting the substrate transport direction, the pair of 3 201214022 of the alignment mark is parallel to the edge of the substrate in the substrate transport direction. It is difficult to detect by interference, and thus the reference position of the alignment S number cannot be accurately detected. Therefore, there is a reduction in the follow-up performance of the reticle to the substrate, and it is impossible to illuminate the light at a target position on the substrate with high precision. SUMMARY OF THE INVENTION The present invention is directed to such a problem, and an object thereof is to provide a photomask, a laser annealing apparatus using the same, and an exposure apparatus, even if the light is irradiated on the same substrate to the offset In the case where the substrate transfer direction is at the position in the parental direction, the moving substrate can be satisfactorily followed. In order to achieve the above object, the photomask according to the first aspect of the invention is characterized in that an array-shaped plural pattern is provided on the surface at a constant arrangement pitch, and the light is selectively irradiated at a plurality of positions on the substrate conveyed in a certain direction. There is a plurality of mask patterns formed by a certain arrangement pitch in a direction intersecting the transport direction of the substrate to allow light to pass through; and a plurality of alignment marks, the structure having a pair of thin lines relative to the plurality of masks The curtain patterns are disposed at a position opposite to the substrate transport direction at a predetermined distance from each other in the substrate transport direction, and a predetermined reference position between the pair of thin lines is in a direction intersecting the substrate transport direction. Formed in a state of being offset from each other by a predetermined distance, wherein the pair of thin wires has an interval equal to an integral multiple of the arrangement pitch of the plurality of patterns disposed on the substrate in a direction intersecting the substrate transport direction; The substrate transport direction is formed in parallel. According to the above configuration, when the light is irradiated to the position of the same type of substrate which is shifted to the direction in which the substrate is conveyed, a suitable one of the plurality of alignment marks arranged at a certain distance from each other in the substrate transfer direction is selected. The alignment mark reduces the interference between the pair of thin wires parallel to the substrate transfer direction of the alignment mark and the edge portions of the pattern provided in the substrate parallel to the substrate transfer direction. Thereby, even if the light is irradiated on the same substrate to the position in the direction intersecting the substrate transport direction, the appropriate index can be selected by selecting an appropriate alignment mark from the plurality of alignment marks. The pair of thin wires of the selected alignment mark and the pattern provided by the substrate are parallel to the interference of both edge portions in the substrate transfer direction. Thus, a pair of thin lines of the selected alignment mark can be easily detected, so that the reference position of the registration mark can be easily calculated. Therefore, the reticle mark selected from the plurality of registration marks can be used to make the reticle follow the moving substrate well. Further, in a state in which the reference position of the selected alignment mark among the plurality of registration marks provided by the mask and the reference position set by the substrate are aligned, one of the selected alignment marks The thin line is arranged to be substantially aligned with a center line of the pixel provided on the substrate parallel to the substrate transport direction. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially aligned. The center line parallel to the substrate transport direction of the pixels provided on the substrate further reduces interference between the pair of thin lines and the both edge portions of the substrate in the substrate transport direction of FIG. 5 201214022. Therefore, since a pair of thin line positions of the alignment mark selected from the plurality of registration marks are located at a slight center position of the pattern farthest from the edge portions of the pattern set in the substrate parallel to the substrate transport direction, The interference between the pair of thin wires and the both edge portions of the above pattern can be avoided, so that the pair of thin wires can be detected more easily. Further, a plurality of microlenses are formed on the substrate side in accordance with the mask patterns. The plurality of microlenses formed on the substrate side corresponding to the respective mask patterns are used to condense the light on the substrate. Thereby, the utilization efficiency of light can be improved. Then, the S-Hing mask pattern is formed in an array in a substrate arrangement direction and a crossing direction thereof at a constant arrangement pitch. The light is irradiated onto the substrate at a plurality of positions by forming a plurality of mask patterns in the substrate transport direction and the intersecting direction in an array at a certain arrangement pitch. Thus, the irradiation area of the light can be enlarged, so that the time such as the laser annealing treatment step or the exposure step can be shortened. Further, in the laser annealing apparatus according to the second aspect of the invention, the substrate having the array-shaped plural pattern on the surface and having a predetermined pattern and transported in a certain direction is aligned with the mask disposed opposite to the substrate. The laser light is selectively irradiated at a plurality of positions on the substrate to anneal the film formed on the substrate, and the reticle stage is provided with a plurality of mask patterns and a plurality of alignment marks. The mask f can move the mask to the substrate transport direction to select a registration mark from the plurality of alignment marks when t; the plurality of mask patterns are formed on the substrate with a certain pitch of 6 201214022 column pitch The transport direction is in a direction intersecting to allow the laser light to pass through; the structure of the plurality of alignment marks is provided with a pair of thin lines, and is disposed at a distance from the substrate transfer direction with respect to the plurality of mask patterns, and is disposed in a direction in which the substrate is transported a position on the opposite side, and a predetermined reference position between the pair of thin lines is mutually offset by a predetermined distance in a direction crossing the substrate transport direction Formed in a state in which the pair of thin wires have an interval equal to an integral multiple of an arrangement pitch of the plurality of patterns provided on the substrate in a direction intersecting the substrate transport direction, and are formed in parallel in the substrate transport direction; The linear camera is configured such that a long-side central axis of the thin-line photosensitive portion is aligned with a center line intersecting the substrate transport direction from a registration mark selected from the plurality of alignment marks of the mask; and a registration mechanism The relative movement of the substrate and the mask in the direction in which the substrate is conveyed is set such that the positional relationship between the reference position of the selected alignment mark and the reference position set in advance by the substrate is set in advance. According to the above configuration, when the laser beam is irradiated to the position of the same substrate in the direction intersecting the substrate transfer direction to perform annealing treatment, the photomask table is moved in the substrate transfer direction, and the substrate transfer direction is mutually Selecting an appropriate alignment mark among the plurality of registration marks arranged at a certain distance, and taking a line camera to take a pair of thin lines parallel to the substrate transport direction of the alignment mark and the reference position on the substrate, according to the captured image The alignment mechanism moves the substrate and the mask in the intersecting direction of the substrate transfer direction so that the positional relationship between the reference position of the 7201214022 bit mark and the reference position of the substrate is set in advance. Thereby, even if the laser light is irradiated on the same substrate to the position where the offset is in the direction intersecting the substrate transport direction, the annealing process can be performed by selecting an appropriate alignment mark from the plurality of alignment marks. The interference between the pair of thin wires of the selected alignment mark and the edges of the substrate provided in the substrate transport direction is reduced. Thus, a pair of thin lines of the selected alignment S number can be easily detected, so that the reference position of the alignment mark can be easily calculated. Therefore, the alignment mark selected from the plurality of registration marks can be used to make the mask follow the moving substrate well. Furthermore, in the state in which the reference position of the selected one of the plurality of registration marks set by the mask and the reference position set by the substrate are aligned, the selected alignment mark The pair of thin wires are arranged to be substantially aligned with a center line parallel to the substrate transport direction of the pixels provided on the substrate. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially The alignment is performed on the center line parallel to the substrate transport direction of the pixels provided on the substrate, thereby further reducing the interference between the pair of thin lines and the edge portions of the substrate disposed in the substrate transport direction. Yu Yu, a pair of thin lines of the alignment mark selected by the plurality of alignment marks provided by the mask are located at the farthest distance from the edge portions of the pattern disposed in the substrate parallel to the substrate transport direction With a slight center position, it is possible to prevent the pair of thin wires from interfering with the 8 201214022 of both edge portions of the above pattern, so that the pair of thin wires can be detected more easily. Thus, the reference position of the reticle can be more easily calculated to surely align the reticle with the substrate so that the laser light can be accurately irradiated onto the target position set on the substrate. Then, the mask is formed with a plurality of microlenses on the substrate side corresponding to the mask patterns. The laser light is condensed on the substrate by a plurality of microlenses formed on the substrate side corresponding to the respective mask patterns. In 疋, the power of the laser source can be reduced, thereby reducing the burden on the laser source and extending the life of the source. Further, in the exposure apparatus according to the third aspect of the invention, the substrate which is provided with the array-shaped plural pattern at a constant arrangement pitch and which is transported in a certain direction is aligned with the mask which is disposed opposite to the substrate, thereby selecting the ultraviolet ray. Irradiating at a plurality of positions on the substrate to expose the photosensitive material coated on the substrate, which is provided with: a photomask holder for holding a mask provided with a plurality of mask patterns and a plurality of alignment marks And moving the mask to the substrate transport direction to select one of the plurality of alignment marks, wherein the plurality of mask patterns are formed at a certain arrangement pitch in a direction intersecting the transport direction of the substrate, The ultraviolet ray passes through; the structure of the plurality of alignment marks includes a pair of thin wires, and is disposed at a position opposite to the substrate transfer direction with respect to the plurality of mask patterns at a distance from each other in the substrate transfer direction, and The predetermined reference position between the pair of thin wires is in a state of being offset from each other by a predetermined distance in a direction intersecting with the substrate transport direction The pair of thin wires has an interval equal to an integral multiple of the arrangement pitch of the plurality of patterns provided on the substrate in a direction intersecting with the substrate transport direction, and is formed in parallel in the substrate transport direction; The camera is configured such that a central axis of a long side of the thin line-shaped photosensitive portion is aligned with a center line intersecting the direction in which the substrate is conveyed from a plurality of alignment marks of the photomask; and a registration mechanism; The substrate and the mask are relatively moved in a direction intersecting the substrate transport direction, and a positional relationship between the reference position of the selected alignment mark and a reference position set in advance by the substrate is set in advance. According to the above configuration, the case where the ultraviolet light is irradiated to the position of the same substrate in the direction intersecting the substrate transfer direction to perform the exposure is performed, and the mask table is moved in the substrate transfer direction, and is separated from each other by the substrate transfer direction. Selecting an appropriate alignment mark among the plurality of registration marks arranged at a certain distance, and using a line camera to take a pair of thin lines parallel to the substrate transport direction of the registration mark and the reference position on the substrate 'according to the captured image The registration mechanism relatively moves the substrate and the mask in the direction in which the substrate is conveyed, so that the positional relationship between the reference position of the alignment mark and the reference position of the substrate is set in advance. Therefore, even if the ultraviolet light is irradiated on the same type of substrate to the position where the substrate is in the direction intersecting the substrate transport direction, the exposure can be performed by selecting an appropriate alignment mark from the plurality of alignment marks. The 201214022 interference of the two edge portions parallel to the substrate transport direction of the pattern provided by the pair of thin line i substrates of the selected alignment mark is reduced. Thus, a pair of thin lines of the selected registration mark can be easily detected, so that the reference position of the alignment mark can be easily calculated. Yes, the alignment mark selected from the complex alignment marks can be used to make the mask follow the moving substrate well. Furthermore, in the state in which the reference position of the selected one of the plurality of registration marks set by the mask and the reference position set by the substrate are aligned, the selected alignment mark The pair of thin wires are arranged to be substantially aligned with a center line parallel to the substrate transport direction of the pixels provided on the substrate. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially The alignment is performed on the center line parallel to the substrate transport direction of the pixels provided on the substrate, thereby further reducing the interference between the pair of thin lines and the edge portions of the substrate disposed in the substrate transport direction. Yu Yu, because a pair of thin lines of the alignment mark selected from the plurality of alignment marks provided from the mask are at the farthest from the edge portions of the pattern set in the substrate parallel to the substrate transport direction The position is slightly centered, so that the interference between the pair of thin wires and the both edge portions of the pattern can be avoided, so that the pair of thin wires can be detected more easily. Therefore, the reference position of the mask can be made more reliable, and the alignment of the mask and the substrate can be surely performed, so that the purple secret can be accurately positioned at the target position set by the substrate 1. Then, the mask is formed on the substrate side with a plurality of micromirrors corresponding to the mask patterns to form a plurality of microlenses on the substrate side to condense the ultraviolet rays on the substrate. . Thus, the power of the light source for exposure can be reduced, thereby reducing the burden on the light source for exposure and prolonging the life of the light source. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing an embodiment of a reticle according to the present invention, wherein (a) is a cross-sectional view taken along line X-X of Fig. 4(b). The reticle 1 is provided with an array-shaped complex pattern at a certain arrangement pitch on the surface, and selectively illuminates the light at a plurality of positions on the substrate conveyed in a certain direction, and has a plurality of mask patterns 2 and a plurality of micro Lens 3 and complex alignment mark 4. In addition, the substrate used here is arranged in a substrate transfer direction indicated by an arrow A in FIG. 2, and a plurality of patterns (hereinafter referred to as "pixel 5") are arranged in a direction in which the pitch is arranged in the substrate transfer direction. For example, a data line 6 is formed along an edge portion of each of the pixels 5 that is parallel to the substrate transport direction, and a gate line is formed along an edge portion of each of the pixels 5 that intersects with the substrate transport direction. Gate line) 7 TFT substrate 8. Further, the outer side of the display area A on the front side in the substrate transport direction is not provided with a cross-shaped mark 9 having a substantially cross-shaped distance from the gate line 2 on the front side in the substrate transport direction, so that the mask 1 and the TFT substrate can be performed. 8 pre-alignment. Here, if there is no nick mark 9, it is impossible to detect the alignment standard on the TFT substrate 8 side (the specific data line 6 in the example 2 beforehand), and the other data line 6' is erroneously detected. The alignment direction of the substrate transfer direction of the pixel 5 is offset by the number of pitches of the arrangement pitch P 2 in the direction of 12 201214022, and the photomask can be formed by the TFT substrate 8 having the upper mark. The pre-alignment with the TFT substrate 8 makes it easy to detect the above-described specific lean line 6. As shown in FIG. 1, the plurality of mask patterns 2 are used to selectively illuminate light at a predetermined plurality of positions (hereinafter referred to as "light irradiation target positions") on the TFT substrate 8, which are formed in a transparent manner. The light-shielding film 11 provided on the surface of the substrate 10 allows light to pass through a certain shape of the opening, and is formed in an array shape with an arrangement pitch equal to the arrangement pitch Pi and p2 of the plurality of pixels 5 provided on the TFT substrate 8. In the substrate transfer direction and its crossing direction. In the present embodiment, the plurality of mask patterns 2 are displayed in two rows of mask patterns 2A and 2B that intersect the substrate transport direction. As shown in FIG. 1(b), the inner surface (the TFT substrate 8 side) of the transparent substrate 10 is provided with a plurality of microlenses 3. The plurality of microlenses 3 are used to condense light on a convex lens on the TFT substrate 8, and are arranged such that the optical axis is aligned with the center of each mask pattern 2. The first to third viewing windows 12A, 12B, and 12C formed at positions opposite to the substrate transport direction indicated by the arrow A with respect to the plurality of mask patterns 2 are provided with first, second, and second portions, respectively. 3 alignment marks 4A, 4B, 4C. The first to third alignment marks 4A to 4C are used to cause the photomask 1 to move while following the moving TFT substrate 8 while moving, and to perform the light irradiation target position on the plurality of mask patterns 2 and the TFT substrate 8. The alignment is arranged such that the substrate transport direction phase 13 201214022 is separated from each other by a distance L2, and is formed as a ridge alignment of the 丨 alignment mark 4a, and the substrate is conveyed in the direction of the substrate. The center axis of the long side of the soil pattern row 2A constitutes the distance L3. Further, the structures of the first to third alignment marks 4A to 4C are provided with a thin line 4 e 'the _ pair, 纟哄 4 which are obliquely intersected with the substrate conveyance direction between the pair of thin wires 4a and 4b, respectively. a and 4 b have an interval nP2 (n is an integer of 1 or more) which is equal to an integral multiple of the arrangement pitch 匕 of the plurality of pixels 5 in the direction in which the substrate is conveyed, and is formed in parallel in the substrate transfer direction, second and second The alignment reference position of the third alignment marks 4B and 4C (for example, the midpoint position between the pair of thin wires 4a and 4b) is formed so as to be shifted in the direction of the substrate transfer direction based on the reference position of the first alignment mark 4A. Move the distance Di, D2 state. In this case, the one thin wire 4c which obliquely intersects the substrate conveyance direction is used to make the alignment mark 4 of the photomask 1 when the photomask 1 of the present invention is used in a laser annealing apparatus or an exposure apparatus which will be described later. The center line of the parent fork in the substrate transfer direction can correctly face the length of the elongated photosensitive portion 24 of the line type camera 17 (refer to FIG. 5) provided for detecting the reference position of the mask 1 and the reference position of the TFT substrate 8. Side center axis. Specifically, the position of the pair of thin lines such as the 4b and the oblique thin line 4c of the alignment mark 4 is detected based on the one-dimensional image captured by the line type camera 17, and the distance between the thin lines 4a and 4c and the thin lines 4c and 4b are detected. The distance between the mask 1 and the mask 1 is moved in the substrate transport direction to make the two distances equal, and the alignment of the line camera 17 and the mask 1 is performed.
又’上述斜向細線4c亦可與上述同樣地使用於TFT 201214022 基板8所言交置之閘極線7的檢測。例如利用線型照相機 17來拍攝上述閘極線7,卩演算因對位記號*的三根細 線4a〜4c而被截斷之閘極線7的部分尺寸。然後，若檢 測出閘極線7之細'線4a、4c間的尺寸與細線4c、牝間 的尺寸變得相等時，便可檢測出雜線7對齊於對位記 ^4，與基板搬送方向呈交又方向的中心線之瞬間。於 是j若以閘極線7對齊於對位記號4的上述中心線之瞬 間為基準，來測量TFT基板8的移動距離或移動時間， 而在該移動距離或移動時間成為預先設定之一定值時 照射雷射光或紫外線的話，便可將雷射光或紫外線正確 地照射在TFT基板8上的光照射目標位置。 再者，上述第1〜第3對位記號4A〜4C的基準位置 係形成為與罩幕圖案2具有一定的位置關係。例如本實 施形態中，如圖1所示，第丨對位記號4A係形成為平 行於其基板搬送方向之中心線會對齊於罩幕圖案列 2A、2B任一者所鄰接之2個罩幕圖案2的中點位置， 而第2對位記號4B則形成為其中心位置會相對於第i 對位記號4A的中心位置而往與基板搬送方向呈交又之 方向偏移距離Di=IV2之狀態。於是，第2對位記號4B 之平行於基板搬送方向的中心線便會對齊於任一罩幕 圖案2的中心。又，第3對位記號4C係形成為其中心 位置會相對於第1對位記號4A的中心位置而往與基板 搬送方向呈交又之方向偏移距離D2=mP2/4(m為奇數） 之狀態。於是’第3對位記號4C之平行於基板搬送方 15 201214022 向的中心線便會對齊於從任一罩幕圖案2的十心而往 基板搬送方向的交叉方向偏移从之位置處。 、又再者，於上述第1〜第3對位記號4A〜4C當中所 選擇之對位記號4的基準位置與TFT基板8所設定之 基準位置㈣錢陳態下，上騎_之對位記號4 的-對細線4a、4b係配置為會分別纽對齊於上述像 素5之平行於基板搬送方向的中心線。於是，在使用各 對位記號4A〜4C來進行光罩丨與TFT基板8的對位之 狀態下，由於各對位記號4A〜4C的上述一對細線如、 4b會分別位在從像素5之平行於基板搬送方向的左右 邊緣部距離充分遙遠之像素5的略中心線上，故不會與 沿著像素5的邊緣部所設置之資料線6干涉，而可容易 地檢測出上述細線4a、4b。是以，便可容易地進行各對 位記號4A〜4C之基準位置的計算。 此外’各對位記號4A〜4C的基準位置不限於一對 細線4a、4b間的中點位置，可設定在以一定的比率分 割上述一對細線4a、4b間之位置處，抑或亦可以一對 細線4a、4b的任一者為基準位置來加以設定。 又，上述實施形態雖已針對對應於罩幕圖案2而 於TFT基板8側設置有微鏡片3之情況加以說明，但 本發明不限於此，亦可不具有微鏡片3。使用本發叼 之光罩1於雷射退火的情況，由於可聚集雷射能量， 因此設置有微鏡片3會較具效果。又，使用於曝光的 情況，則並非一定要具備微鏡片3。然而，當設置有 16 201214022 微鏡片3時’可將罩幕圖案2縮小投影在基板上，從 而可提高曝光圖案的分解能力。 再者，上述實施形態中，雖已針對設置有2列罩幕 圖案列2A、2B之情況加以說明，但本發明不限於此， 亦可為設置有1列或3列以上的罩幕圖案列。 接下來，針對使用本發明光罩丨之雷射退火裝置加 以說明。圖3係顯示本發明雷射退火裝置的概略結構之 部分剖面俯視圖。該雷射退火裝置係進行表面以一定的 配列間距設置有陣列狀複數像素5且往箭頭A方向搬送 中之例如TFT基板8，與和該TFT基板8呈對向配置 之光罩1的對位’來將雷射光21選擇性地照射在TFT 基板8上之複數位置處，以使tft基板8所形成之非 晶石夕的薄膜退火而聚矽化’其係具備有搬送機構13、 雷射光源14、耦合光學系統15、光罩台16、線型照相 機Π、對位機構18及控制機構19所加以構成。 上述搬送機構13係將TFT基板8載置於其上面並 以一定速度朝例如圖3所示之箭頭A方向搬送，其係具 備有於上面具有會噴出氣體的多個喷出孔與會吸引氣 體的多個吸引孔之氣體台2〇，而在藉由氣體之噴出與 吸引的平衡來使TFT基板8在氣體台20上浮起特定量 之狀態下’藉由搬送滾筒（省略圖示）來夾持TFT基板8 的兩端邊緣部而進行搬送，其係具備有省略圖示之位置 感測器或速度感測器。 上述搬送機構13的上方係設置有雷射光源14。該 17 201214022 雷射光源14係會以例如5〇Hz的反覆周期放射例如波長 308nm或353nm的雷射光21之準分子雷射。 上述雷射光源Η所放射之雷射光^的光線路徑上 係設置有耦合光學系統15。_合光學系統15會擴大 雷射光21的光練’來使光束之橫剖面_強度分布 均句而照射在光罩i ’其係具備有例如複數繩眼透鏡或 複數聚光透鏡所加以構成。 W上干糸統15之雷射光21的行進方向下游 侧係設置有光罩台16。該光罩台16係接近並對向於 TFT基板8而用以保持光罩i，其中央部係形成有開口 部22 ’以夾持光罩i的周緣部。然後，藉由例如馬達 等驅動機構23’便可往圖3所示之箭頭B、c方向移動。 上述光罩台16所保持之光罩i的第卜第3觀看窗 12lr12C當中，係對向於—個觀看窗（圖3中為第2觀 看窗12B)而於搬送機構13侧設置有線型照相機17。該 線型照相機17會從下方穿透TFT基板8來拍攝其表面 及光罩1的對位記號4，並輸出該等的一維影像，其係 有—直線狀地排列有複數感光元件而形成之細長 ' ^光邠24(參酌圖5)，而配置為該感光部24的長邊中 ^會對齊於從上述第1〜第3對位記號4A〜4C當中所 圖方3顯示選擇第2對位記號4B的 。基板搬送方向王交叉方向的中心線。 置有照相機17而於光罩台16上方係設 、;'、5’可照明線型照相機17的拍攝位置。 201214022 設置有可使上述光罩台16往基板搬送方向的交又 方向移動之對位機構18。該對位機構18係用以進行 基板8與光罩1的對位，其係由例如線型馬達、 磁致動器、或執道及馬達等所構成。 設置有連結於上述搬送機構13、雷射光源14、光 罩σ 16線型照相機、及對位機構18之控制機構 19。該控制機構19會對應於TFT基板8上預先設定的 複數退火目標位置來使光罩1往基板搬送方向移動，從 第1〜第3對位記號4A〜4C當中選擇一個對位記號斗’ 來進行該一對位記號4與TFT基板8上預先設定的基 準位置之對位後，將雷射光21照射在光罩丨，以對基 板上的複數退火目標位置進行退火處理，其係如圖4所 示般地具備有影像處理部26、記憶體27、演算部28、 搬送機構驅動控制器29、光罩台驅動控制器3〇、對位 機構驅動控制器31、雷射光源驅動控制器32及控制部 33。 此處，影像處理部26會即時處理線型照相機17所 拍攝之一維影像，來檢測線型照相機17之細長狀感光 部24長邊方向的輝度變化，以檢測出TFT基板8的資 料線6所設定之基準位置及光罩丨之對位記號4的—對 細線4a、4b之位置，並從線型照相機17的輸出中之基 板搬送方向的輝度變化來檢測出TFT基板8之刻痕記 號9之與基板搬送方向呈交叉的細線9a(參酌圖2)。 又，記憶體27會記憶從檢測出光罩^所設定之距 201214022 離LZ、L3(參酌圖1)、TFT基板8所設定之距離LrP!(參 酌圖2)、對應於第1〜第3對位記號4A〜4C的對位目標 值Ds】、Ds2、及TFT基板8之刻痕記號9之與基板搬 送方向呈交叉的細線9a後到開啟雷射光源14為止之 TFT基板8移動距離的目標值Ls，並暫時地記憶後述 演算部28中之演算結果。此外，上述對位目標值dSi 係對位記號4之基準位置與基板之刻痕記號9的中心位 置之間之距離目標值，目標值DR係對位記號4之基準 位置與基板所设定之基準位置(例如特定資料線6的中 心位置）之間之距離目標值。 再者，演算部28會演算利用影像處理部26所檢測 之TFT基板8的基準位置與光罩1中所選擇之對位記 唬4的基準位置之間之距離d，並根據搬送機構13之 位置感測器的輸出來演算TFT基板8的移動距離乙。 然後，搬送機構驅動控制器29係藉由一定周期的 脈衝來控制搬送機構13的驅動，以便能夠以預^設定 的速度來搬送TFT基板8。 入 ^ ……μ，民兀旱台16往圖 之箭頭B、C方向移動，來從光罩】所形成之第 3對位記號4A〜4C當中選擇一個蚪/ 在 叙止對位記號4，其能夠驅 動先罩台16所設置之驅動機構23。 再者，對位機構驅動控制器3 演算出之抓基板8的鲜位置與光罩^ 之所 對位记號4的基準位置之間之距㈣，與從記憶體η 20 201214022 所讀取之對位目標值Dsi、Ds2，並驅動對位機構來 使光罩1往基板搬送方向的交又方向移動以使兩者 致0 再者’雷射光源驅動控制器32係用以控制雷射光 源14的開啟及關閉。然後，控制部33會統合並$空制整 體來使上述各構成要素適當地動作。 二 接下來，針對上述結構之雷射退火裴置的動作加以 說明。 自尤，衩制機構19的記憶體27會記憶有所需資1 而成為初始設定。又，光罩台16的驅動機構幻會藉由 控制機構19的光罩台驅動控制器3G而被驅動，來使光 罩台16往圖3所示之箭頭B方向移動距離b。藉此， 第1觀看窗12A便會位在線型照相機17上 1對位記號4A。 、擇第 此時，係根據線型照相機17所拍攝之一維影像並 利用影像處理部26來從線型照_17之細長狀感光部 Μ長邊方向的輝度變化檢測出第i對位記號* a ^一^ 細線4 a、4 b及斜向細、線4 c的位置，利用演算部2 8來 f算細線4a、4c間之距離及細線4c、扑間之距離，並 错由光罩台驅输制H30微娜光以16之往基板搬 咬方向的移動來使兩麟相等，以正確地進行線型照相 ^ 17之感光部24的長邊中心軸與光罩i之第！對位 破4A之與基板搬送方向呈交又方向的中心線之對位°。 接下來’搬送機構13會在將表面形成有非晶石夕薄 201214022 膜之TFT基板8载置於氣體台2()的上面來使圖2所示 之刻痕記號9成為圖3之箭頭A所示的基板搬送方向前 側之狀態下’以-定的速度浦頭A方向開始搬送。 搬送TFT基板§來使上述刻痕記號9到達光罩1 所开/成之第1觀看自ISA的下側後，利用線型照相機 17開始攝影，並從線型照相機17以-定的時間間隔輸 出拍攝影像。該拍攝影像會被輸人至控制機構19的影 像處理部26來進行影像處理，並從線型照相機17之細 長狀感光部24長邊方向的輝度變化，來檢測出tft基 板8之刻痕記號9之平行於基板搬送方向的細線％(參 酌圖2)的位置，及第1對位記號4A之一對細線4a、4b 的位置。 演算部28中，係根據影像處理部26所檢測之上述 刻痕記號9之細線外的位置資訊，與第丨對位記號4A 之一對細線4a、4b的位置資訊，來演算上述刻痕記號9 之上述細線％之平行於基板搬送方向的中心線與第丄 對位記號4A的基準位置(例如中心位置）之間之距離 D ’並與記憶在記憶體27之對位目標值^^作比較。 接下來，對位機構驅動控制器31會驅動控制對位 機構18來使光罩1往圖5之箭頭e、F方向移動，以使 上述距離D與對位目標值dSi —致，而進行TFT基板8 與光罩1的預對位。 又’影像處理部26中，會處理線型照相機π所拍 攝之一維影像，並從沿著基板搬送方向之輝度變化，來 22 201214022 檢測出刻痕記號9之與基板搬送方向呈交叉的細線 9a又肩算部28中，根據搬送機構13所設置之位置 感測器的輸出來檢测出上述細線9a後，會演算TF丁基 板8的移動輯L，並比較植離L與記憶在記憶體π 之TFT基板8的移動距離目標值Ls(本實施形態中，Further, the oblique thin line 4c can be used for detecting the gate line 7 which is interposed in the TFT 201214022 substrate 8, as described above. For example, the linear camera 17 is used to take the gate line 7 and calculate the partial size of the gate line 7 which is cut by the three thin lines 4a to 4c of the alignment mark *. Then, when it is detected that the size between the thin 'lines 4a, 4c' of the gate line 7 and the thin line 4c and the size between the turns become equal, it can be detected that the miscellaneous line 7 is aligned with the alignment mark 4, and the substrate is transported. The moment the direction is presented to the centerline of the direction. Then, if the gate line 7 is aligned with the center line of the alignment mark 4 as a reference, the moving distance or the moving time of the TFT substrate 8 is measured, and when the moving distance or the moving time becomes a predetermined value. When laser light or ultraviolet light is irradiated, the light which is irradiated with laser light or ultraviolet rays on the TFT substrate 8 can be irradiated to the target position. Further, the reference positions of the first to third alignment marks 4A to 4C are formed to have a constant positional relationship with the mask pattern 2. For example, in the present embodiment, as shown in FIG. 1, the second alignment mark 4A is formed so as to be aligned with the center line of the substrate transfer direction and aligned with the two masks adjacent to either of the mask pattern rows 2A and 2B. The midpoint position of the pattern 2, and the second alignment mark 4B is formed such that the center position thereof is opposite to the center position of the ith registration mark 4A and is offset from the substrate transport direction by a distance Di=IV2. status. Then, the center line of the second registration mark 4B parallel to the substrate transport direction is aligned with the center of any of the mask patterns 2. Further, the third registration mark 4C is formed such that the center position thereof is offset from the center position of the first registration mark 4A by the distance D2=mP2/4 (m is an odd number) in the direction in which the substrate is conveyed. State. Then, the center line parallel to the substrate conveyance side 15 201214022 of the third registration mark 4C is aligned with the position shifted from the ten hearts of any of the mask patterns 2 to the direction in which the substrate conveyance direction is shifted. Further, the reference position of the alignment mark 4 selected from the first to third alignment marks 4A to 4C and the reference position set by the TFT substrate 8 (4), the position of the upper riding_ The pair of thin lines 4a and 4b of the symbol 4 are arranged so as to be aligned with the center line of the pixel 5 parallel to the substrate transport direction. Then, in a state where the alignment marks 4A to 4C are used to align the mask 丨 with the TFT substrate 8, the pair of thin lines such as 4b of the alignment marks 4A to 4C are respectively positioned at the slave pixels 5. The left and right edge portions parallel to the substrate transport direction are located on a substantially center line of the pixel 5 which is sufficiently distant, so that the thin line 4a can be easily detected without interfering with the data line 6 provided along the edge portion of the pixel 5. 4b. Therefore, the calculation of the reference positions of the alignment marks 4A to 4C can be easily performed. Further, the reference positions of the respective alignment marks 4A to 4C are not limited to the midpoint positions between the pair of thin wires 4a and 4b, and may be set at positions that divide the position between the pair of thin wires 4a and 4b at a constant ratio, or may be one. Any one of the thin wires 4a and 4b is set as a reference position. Further, although the above embodiment has been described with respect to the case where the microlens 3 is provided on the TFT substrate 8 side in accordance with the mask pattern 2, the present invention is not limited thereto, and the microlens 3 may not be provided. In the case of laser annealing using the mask 1 of the present invention, since the laser energy can be concentrated, the provision of the microlens 3 is more effective. Further, in the case of exposure, it is not always necessary to provide the microlens 3. However, when the 16 201214022 microlens 3 is provided, the mask pattern 2 can be reduced and projected onto the substrate, whereby the decomposition ability of the exposure pattern can be improved. Further, in the above-described embodiment, the case where the two rows of mask pattern rows 2A and 2B are provided has been described. However, the present invention is not limited thereto, and one or three or more rows of mask pattern columns may be provided. . Next, a description will be given of a laser annealing apparatus using the photomask of the present invention. Fig. 3 is a partial cross-sectional plan view showing a schematic configuration of a laser annealing apparatus of the present invention. In the laser annealing apparatus, for example, the TFT substrate 8 in which the array-shaped plurality of pixels 5 are arranged at a predetermined arrangement pitch and is conveyed in the direction of the arrow A is aligned with the mask 1 disposed opposite to the TFT substrate 8. 'The laser light 21 is selectively irradiated on the TFT substrate 8 at a plurality of positions to anneal and agglomerate the amorphous film formed by the tft substrate 8 to have a transport mechanism 13 and a laser light source. 14. The coupling optical system 15, the mask table 16, the line camera Π, the alignment mechanism 18, and the control mechanism 19 are configured. The transport mechanism 13 carries the TFT substrate 8 on the upper surface thereof and transports it at a constant speed in the direction of the arrow A shown in FIG. 3, and has a plurality of discharge holes on the upper surface that emit gas and attracts gas. The gas table 2 of the plurality of suction holes is held by the transfer roller (not shown) in a state where the TFT substrate 8 is floated on the gas table 20 by a certain amount by the balance of the discharge of the gas and the suction. The both ends of the TFT substrate 8 are transported, and a position sensor or a speed sensor (not shown) is provided. A laser light source 14 is provided above the transport mechanism 13. The 17 201214022 laser source 14 emits a quasi-molecular laser of, for example, laser light 21 having a wavelength of 308 nm or 353 nm over a period of 5 Hz. A coupling optical system 15 is disposed in the light path of the laser light emitted by the laser light source. The commissive optical system 15 expands the optical ray of the laser light 21 so that the cross-section of the light beam _ intensity distribution is uniformly applied to the reticle i ′, and is provided with, for example, a plurality of accompaniment lenses or a plurality of condensing lenses. A mask stage 16 is provided on the downstream side in the traveling direction of the laser light 21 of the W-drying system 15. The mask stage 16 is close to the TFT substrate 8 for holding the mask i, and an opening portion 22' is formed in the center portion thereof to sandwich the peripheral portion of the mask i. Then, the drive mechanism 23' such as a motor can be moved in the directions of arrows B and c shown in Fig. 3. The third viewing window 12lr12C of the mask i held by the mask unit 16 is provided with a wired camera on the side of the transport mechanism 13 in a viewing window (the second viewing window 12B in FIG. 3). 17. The line type camera 17 penetrates the TFT substrate 8 from below to take a picture of the surface and the alignment mark 4 of the reticle 1, and outputs the one-dimensional image, which is formed by linearly arranging a plurality of photosensitive elements. The elongated ' ^ 邠 24 (refer to FIG. 5) is arranged such that the long side of the photosensitive portion 24 is aligned with the second pair selected from the display of the first to third alignment marks 4A to 4C Bit 4B. The substrate conveys the center line in the direction in which the king crosses. The camera 17 is placed and attached to the top of the mask table 16; ', 5' can illuminate the shooting position of the line camera 17. 201214022 A positioning mechanism 18 for moving the mask table 16 in the direction in which the substrate transfer direction is moved is provided. The alignment mechanism 18 is for aligning the substrate 8 with the reticle 1, and is constituted by, for example, a linear motor, a magnetic actuator, or an obstruction and a motor. A control mechanism 19 connected to the transport mechanism 13, the laser light source 14, the reticle σ 16 line type camera, and the aligning mechanism 18 is provided. The control unit 19 moves the mask 1 in the substrate transport direction in accordance with a predetermined plurality of annealing target positions on the TFT substrate 8, and selects one of the first to third alignment marks 4A to 4C. After the alignment of the pair of marks 4 with the predetermined reference position on the TFT substrate 8, the laser beam 21 is irradiated onto the mask 丨 to anneal the target of the plurality of annealing targets on the substrate, as shown in FIG. The video processing unit 26, the memory 27, the calculation unit 28, the transport mechanism drive controller 29, the reticle stage drive controller 3, the aligning mechanism drive controller 31, and the laser light source drive controller 32 are provided as shown. And a control unit 33. Here, the image processing unit 26 immediately processes the one-dimensional image captured by the line camera 17 to detect the luminance change in the longitudinal direction of the elongated photosensitive portion 24 of the line camera 17 to detect the setting of the data line 6 of the TFT substrate 8. The reference position and the position of the alignment mark 4 of the mask 对 are the positions of the thin lines 4a and 4b, and the luminance change in the substrate transfer direction in the output of the line camera 17 detects the sum of the scribe marks 9 of the TFT substrate 8. The substrate transport direction is a thin line 9a (refer to FIG. 2). Further, the memory 27 memorizes the distance LrP! (as shown in FIG. 2) set from the detection of the mask 210 from the distance LZ, L3 (refer to FIG. 1) and the TFT substrate 8, and corresponds to the first to third pairs. The target value Ds of the bit marks 4A to 4C, the Ds2, and the target of the movement distance of the TFT substrate 8 until the laser light source 14 is turned on after the thin line 9a intersecting the substrate transfer direction of the scribe mark 9 of the TFT substrate 8 The value Ls is used to temporarily memorize the calculation result in the calculation unit 28 described later. Further, the alignment target value dSi is a distance target value between the reference position of the registration mark 4 and the center position of the nick mark 9 of the substrate, and the target value DR is set by the reference position of the registration mark 4 and the substrate. The distance target value between the reference position (for example, the center position of the specific data line 6). Furthermore, the calculation unit 28 calculates the distance d between the reference position of the TFT substrate 8 detected by the image processing unit 26 and the reference position of the matching mark 4 selected in the mask 1, and is based on the transport mechanism 13 The output of the position sensor is used to calculate the moving distance B of the TFT substrate 8. Then, the transport mechanism drive controller 29 controls the drive of the transport mechanism 13 by a pulse of a predetermined period so that the TFT substrate 8 can be transported at a predetermined speed. Enter ^ ......μ, and move the ball in the direction of arrows B and C of the figure, and select one of the third alignment marks 4A to 4C formed by the mask]. It is capable of driving the drive mechanism 23 provided by the hood 16 . Furthermore, the distance between the fresh position of the grasping substrate 8 and the reference position of the registration mark 4 of the reticle is calculated by the registration mechanism drive controller 3, and is read from the memory η 20 201214022. Aligning the target values Dsi, Ds2, and driving the alignment mechanism to move the reticle 1 in the direction of the substrate transport direction to cause the two to cause zero. Further, the laser light source drive controller 32 is used to control the laser light source. 14 is turned on and off. Then, the control unit 33 merges the $empty units to operate the respective constituent elements as appropriate. Second, the operation of the laser annealing apparatus of the above structure will be described. In particular, the memory 27 of the mechanism 19 memorizes the required amount 1 and becomes the initial setting. Further, the drive mechanism of the mask stage 16 is driven by the mask stage drive controller 3G of the control unit 19 to move the mask stage 16 by the distance b in the direction of the arrow B shown in Fig. 3. Thereby, the first viewing window 12A can position the alignment mark 4A on the line type camera 17. At this time, the i-th registration mark is detected from the change in luminance in the longitudinal direction of the elongated photosensitive portion of the line type image_17 by the image processing unit 26 based on the one-dimensional image captured by the line camera 17. ^一^ The thin lines 4 a, 4 b and the oblique thin, line 4 c position, using the calculation unit 28 to calculate the distance between the thin lines 4a, 4c and the thin line 4c, the distance between the flutter, and wrong by the mask table The H30 micro-light is driven by the movement of the substrate to the direction of the substrate to make the two linings equal, so as to correctly perform the long-side central axis of the photosensitive portion 24 of the line-type camera and the reticle i! The alignment of the offset 4A is the alignment of the center line which is in the direction of the substrate transfer direction. Next, the "transport mechanism 13" mounts the TFT substrate 8 on which the amorphous thin-walled 201214022 film is formed on the upper surface of the gas table 2 () so that the score mark 9 shown in FIG. 2 becomes the arrow A of FIG. In the state in which the front side of the substrate conveyance direction is shown, the conveyance starts in the direction of the head A in a predetermined speed. The TFT substrate is conveyed so that the scribe mark 9 reaches the lower side of the ISA opened by the reticle 1, and then the photographing is started by the line camera 17 and outputted from the line camera 17 at a predetermined time interval. image. The captured image is input to the image processing unit 26 of the control unit 19 to perform image processing, and the gradation mark 9 of the tft substrate 8 is detected from the luminance change in the longitudinal direction of the elongated photosensitive portion 24 of the line camera 17. The position of the thin line % (refer to FIG. 2) parallel to the substrate transport direction and the position of one of the first alignment mark 4A to the thin lines 4a, 4b. In the calculation unit 28, the position information of the thin line 4a and 4b is calculated based on the position information outside the thin line of the nick mark 9 detected by the image processing unit 26 and the position information of the thin line 4a and 4b. The thin line % of 9 is parallel to the distance D ' between the center line of the substrate transport direction and the reference position (for example, the center position) of the second alignment mark 4A, and is matched with the target value of the memory in the memory 27. Comparison. Next, the registration mechanism drive controller 31 drives the control alignment mechanism 18 to move the reticle 1 in the directions of arrows e and F of FIG. 5 so that the distance D and the alignment target value dSi are coincident, and the TFT is performed. The substrate 8 is pre-aligned with the reticle 1. Further, the image processing unit 26 processes the one-dimensional image captured by the line camera π and changes the luminance along the substrate transport direction. 22 201214022 detects the thin line 9a of the score mark 9 that intersects the substrate transport direction. In the shoulder calculation unit 28, after the thin line 9a is detected based on the output of the position sensor provided in the transport mechanism 13, the movement sequence L of the TF butyl plate 8 is calculated, and the ionization L and the memory are compared in the memory. The moving distance target value Ls of the TFT substrate 8 of π (in the present embodiment,
Ls Li+L3) ’當兩者一致而如圖6所示般地基板8 之複數資料線6與複數閘極線7的交又部係與光罩〗之 複數^幕圖案2的中心對齊時，便會將雷射光源14的 開啟指令輸出至雷射光源驅動控制器32。 當雷射光源驅動控制器32接收到上述開啟指令後 便會開啟雷射辆14特定時間。藉此，如圖7所示， 替射光21便會因光罩1的微鏡片3而聚光在tft基板 8的資料線6與閘極線7之交叉部，來對該交叉部的非 晶石夕膜進行退火處理而加以聚矽化。 之後，與上述同樣地，根據線型照相機17所拍攝 之拍攝影像，來將接近例如線型照相機17之感光部Μ 所預先設定的基準位置之TFT基板8的資料線6選擇 為特定資料線6，並檢測該特定資料線6的位置及第i 對位記號4A之一對細線4a、4b的位置。然後，演算該 特定資料線6的中心線與第丨對位記號4A的基準:置 (例如中心位置）之間之距離D ’驅動對位機構18來使光 罩1往圖6所示之箭頭E、Fs向移動，以使該距離d 與記憶體27所記憶之對位目標值DS2 一致，而進行tft 基板8與光罩1的對位。藉此，便可使光罩丨追隨移動 23 201214022 中的TFT基板8。 此時’如圖7所示，帛1對位記號4A的-對細線 4a、4b，位在自TFT基板8之像素5之平行於基板搬 送方向(箭頭A方向）的兩邊緣部相距最叙平行於箭頭 A方向的中心線上。於是’上述一對細線々a，便不 會與像素5之沿著上述邊緣部所設置的資料線6干涉， 而可容易地檢測。是以，便可容易地計算第^位記號 4的基準位置’來使光罩！正確地追隨移動中的基 板8。 如此地，一邊使光罩1追隨移動中的TFT基板8， 二邊在每當TFT基板8移動2ρι(ρι為像素5之基板搬 送方向的配列間距)時，藉由雷射光源驅動控制器32來 啟雷射光源14 -定時間^藉此，便可對TFT基板8 上之所有退火目標位置34的非晶矽膜進行退火處理而 加以聚梦化。Ls Li+L3) 'When the two are identical, as shown in FIG. 6, when the intersection of the plurality of data lines 6 of the substrate 8 and the plurality of gate lines 7 is aligned with the center of the plurality of mask patterns 2 of the mask The turn-on command of the laser light source 14 is output to the laser light source drive controller 32. When the laser light source drive controller 32 receives the above-described opening command, the laser vehicle 14 is turned on for a specific time. Thereby, as shown in FIG. 7, the incident light 21 is condensed by the microlens 3 of the reticle 1 at the intersection of the data line 6 of the tft substrate 8 and the gate line 7, to be amorphous to the intersection portion. The stone film is annealed and polymerized. Then, in the same manner as described above, the data line 6 of the TFT substrate 8 which is close to the reference position set in advance by the photosensitive portion 例如 of the line camera 17 is selected as the specific data line 6 based on the captured image captured by the line camera 17, and The position of the specific data line 6 and the position of one of the i-th registration marks 4A to the thin lines 4a, 4b are detected. Then, the center line of the specific data line 6 and the reference of the second alignment mark 4A are calculated: the distance D' between the set (for example, the center position) drives the alignment mechanism 18 to bring the mask 1 to the arrow shown in FIG. E and Fs are moved so that the distance d coincides with the alignment target value DS2 memorized by the memory 27, and the alignment of the tft substrate 8 with the reticle 1 is performed. Thereby, the mask 丨 can be made to follow the TFT substrate 8 in the movement 23 201214022. At this time, as shown in FIG. 7, the pair of thin lines 4a and 4b of the 帛1 registration mark 4A are located at the edges of the pixel 5 of the TFT substrate 8 which are parallel to the substrate transport direction (arrow A direction). Parallel to the center line in the direction of arrow A. Thus, the pair of fine lines 々a are not interfered with the data line 6 provided along the edge portion of the pixel 5, and can be easily detected. Therefore, the reference position of the ^th mark 4 can be easily calculated to make the mask! Follow the moving board 8 correctly. In this manner, while the photomask 1 is following the moving TFT substrate 8, the laser light source is driven by the controller 32 when the TFT substrate 8 is moved by 2 ρ (the arrangement pitch of the substrate 5 in the substrate transport direction). The laser light source 14 is turned on for a predetermined period of time, whereby the amorphous germanium film of all the annealing target positions 34 on the TFT substrate 8 can be annealed and integrated.
接下來，就針對不同退火目標位置34之別的TFT 基板8 ’使用相同的光罩丨來進行雷射退火處理之情況 加以說明。 此情況下，當像素5的上述退火目標位置34如圖 8所示地位在對齊於平行於基板料方向（箭頭A方向) 的中心線之閘極線7上時，只要使光罩丨往基板搬送方 向（箭頭A方向）的交又方向移動同方向之像素5的配列 間距Pi的半間距(P2/2)即可。Next, a description will be given of a case where the same annealing mask is used for the TFT substrate 8' of the different annealing target positions 34 to perform the laser annealing treatment. In this case, when the annealing target position 34 of the pixel 5 is placed on the gate line 7 aligned with the center line parallel to the substrate direction (arrow A direction) as shown in FIG. 8, the mask is placed on the substrate. The direction of the conveyance direction (the direction of the arrow A) may be shifted by the half pitch (P2/2) of the arrangement pitch Pi of the pixels 5 in the same direction.
然而，此時，如圖8所示，由於第i對位記號4A 24 201214022 的一對細線4a、4b會與TFT基板8的資料線6干涉， 故無法利用線型照相機17來使上述細線4a、4b與資科 線6分離而檢測出該細線4a、4b。於是，便會無法計算 第1對位記號4A的基準位置，而無法使光罩1追隨# 動中的TFT基板8。 於是，上述情況下，本發明係藉由光罩台驅動控制 器30來驅動驅動機構23以使光罩台16往圖3所示之 箭頭C方向移動距離L2，並將藉由線型照相機17所檢 測之對位記號4從第1對位記號4A切換成第2對位犯 號4B。此處，由於第2對位記號4B係設置為使第1對 位s己號4A往基板搬送方向（箭頭a方向）的交叉方向偏 移Di=IV2，故第2對位記號4B的一對細線4a、4b便 會如圖8所示般地位在像素5之平行於板搬送方向（箭 頭A方向）的中心線上’而容易檢測出第2對位記號 4B。於是’便可使用第2對位記號4B來使光罩1追隨 移動中的TFT基板8 ’且縱使是退火目標位置34相異 之TFT基板8’仍可使用相同的光罩1來進行位置精確 度良好的退火處理。 再者’針對相異於上述任一退火目標位置34之目 標位置進行退火處理的情況，只要選擇對應於該目標位 置而形成於光罩1之第3對位記號4C即可。此情況下， 當已進行TFT基板8與光罩丨的對位之狀態下，由於 第=對位記號4C的一對細線4a、4b會位在遠離像素5 之平仃於基板搬送方向的兩邊緣部之像素5中途因此 25 201214022 一對細線4a、4b與資料線6便不會發生干涉，而可容 易地檢測出第3對位記號4C，來使光罩丨追隨移動中 的TFT基板8。 此外，上述實施形態雖已針對基板為1^1基板8 之情況加以說明，但本發明不限於此，只要是夠將雷射 光21照射在基板上之複數位置處來對被覆在表面的薄 膜進行退火處理的話，則可為任何基板。 又’上述實施形態雖已針對使用本發明光罩1於雷 射退火裝置的情況加以說明，但不限於雷射退火裝置， 而亦可適用於使塗佈於基板上之感光材料曝光之曝光 裝置。此時’只要將上述雷射退火裝置的雷射光源14 置換為放射出紫外線之氙氣燈、超高壓水銀燈，或放射 出紫外線之雷射光源所構成的曝光用光源即可。藉此， 便可在對應於基板上所的複數曝光目標位置來使光罩i 往基板搬送方向移動，從複數對位記號4當中選擇一對 位記號4,進行該一對位記號4的基準位置與基板上所 預先設定的基準位置之對位後，對光罩1照射紫外線來 將基板上之複數曝光目標位置曝光。 此情況下’只要在光罩1設置有複數列的罩幕圖案 列，而於當基板搬送方向前側的曝光目標位置對齊於光 罩1的複數罩幕圖案列當中之基板搬送方向前側之罩 幕圖案列的各罩幕圖案2時照射紫外線一定時間，並在 之後，每當基板移動相等於罩幕圖案2之基板搬送方向 的配列間距Pi之距離時便照射紫外線一定時間的話， 26 201214022 光目標位置多重曝光。於是，可降低曝光 用先源的功率，並減輕光源負擔，從而可延長光源妾a。 然後，以上的說明雖已針對當進行光罩u基了的 對位時，係使光罩⑽往基板搬送方向的交又方向移動 之情況加以說明，但本發明不限於此，亦可移 側，抑或移動光罩1與基板兩者。 土 【圖式簡單說明】 圖1係顯不本發明之光罩的實施形態之圖式，（幻 為俯視圖，（b)為⑷之χ_χ線剖面圖。 圖2係顯示TFT基板的概略結構之俯視圖。 圖3係顯示本發明雷射退火裝置的概略結構之部 分剖面俯視圖。 圖4係顯示上述雷射退火裝置的控制機構的結構 之方塊圖。 ^圖5係用以說明使用上述TFT基板所設置之刻痕 s己唬來進行TFT基板與光罩的預對位之俯視圖。 圖6係用以說明光罩對於移動中的TFT基板的追 隨之俯視圖。 圖7係顯示TFT基板之退火目標位置與光罩之第i 對位§己號的位置關係之說明圖。 圖8係顯示TFT基板之其他退火目標位置與光罩 之第2對位記號的位置關係之說明圖。 27 201214022 【主要元件符號說明】 D、Di、D2、L、L2、L3 距離 Dsj ' Ds2 對位目標值 Ls 移動距離目標值However, at this time, as shown in FIG. 8, since the pair of thin wires 4a and 4b of the i-th registration mark 4A 24 201214022 interfere with the data line 6 of the TFT substrate 8, the thin line camera 7 cannot be used to make the thin line 4a, 4b is separated from the Zike line 6 and the thin lines 4a, 4b are detected. Therefore, the reference position of the first registration mark 4A cannot be calculated, and the mask 1 cannot be made to follow the TFT substrate 8 in the # movement. Therefore, in the above case, the present invention drives the drive mechanism 23 by the reticle stage drive controller 30 to move the reticle stage 16 in the direction of the arrow C shown in FIG. 3 by a distance L2, and by the line type camera 17 The detected registration mark 4 is switched from the first registration mark 4A to the second registration mark 4B. Here, since the second registration mark 4B is provided such that the first registration position s4A is shifted in the direction in which the substrate transfer direction (arrow a direction) is shifted by Di=IV2, a pair of the second alignment mark 4B is provided. As shown in FIG. 8, the thin lines 4a and 4b are positioned on the center line parallel to the sheet conveying direction (arrow A direction) of the pixel 5, and the second registration mark 4B is easily detected. Thus, the second align mark 4B can be used to make the reticle 1 follow the moving TFT substrate 8' and the TFT substrate 8' which is different from the annealing target position 34 can still use the same reticle 1 for positional accuracy. Good annealing treatment. Further, in the case where the annealing treatment is performed on the target position different from any of the annealing target positions 34, the third alignment mark 4C formed in the mask 1 corresponding to the target position may be selected. In this case, when the alignment of the TFT substrate 8 and the mask 已 has been performed, the pair of thin wires 4a, 4b of the == alignment mark 4C are positioned at two positions away from the pixel 5 in the substrate transport direction. In the middle of the pixel 5 at the edge portion, the pair of thin wires 4a and 4b and the data line 6 do not interfere with each other, and the third alignment mark 4C can be easily detected to cause the photomask to follow the moving TFT substrate 8. . Further, in the above-described embodiment, the case where the substrate is the substrate 1 is described. However, the present invention is not limited thereto, and the film coated on the surface may be irradiated with laser light 21 at a plurality of positions on the substrate. For annealing, it can be any substrate. Further, although the above embodiment has been described with respect to the case where the photomask 1 of the present invention is used in a laser annealing apparatus, it is not limited to the laser annealing apparatus, and may be applied to an exposure apparatus for exposing the photosensitive material applied to the substrate. . In this case, the laser light source 14 of the above-described laser annealing apparatus may be replaced by a xenon lamp that emits ultraviolet rays, an ultrahigh pressure mercury lamp, or a light source for exposure that emits ultraviolet light. Thereby, the mask i can be moved in the substrate transport direction corresponding to the plurality of exposure target positions on the substrate, and a pair of bit marks 4 can be selected from the plurality of alignment marks 4 to perform the reference of the pair of bit marks 4. After the position is aligned with a predetermined reference position on the substrate, the mask 1 is irradiated with ultraviolet rays to expose the plurality of exposure target positions on the substrate. In this case, 'the mask 1 is provided in the plurality of rows in the mask 1, and the exposure target position on the front side in the substrate transport direction is aligned with the mask on the front side in the substrate transport direction among the plurality of mask patterns in the mask 1. Each of the mask patterns 2 of the pattern row is irradiated with ultraviolet rays for a certain period of time, and thereafter, each time the substrate moves at a distance equal to the arrangement pitch Pi of the substrate transfer direction of the mask pattern 2, ultraviolet rays are irradiated for a certain period of time, 26 201214022 light target Multiple exposure position. Thus, the power of the source for the exposure can be reduced, and the burden of the light source can be reduced, so that the light source 妾a can be extended. In the above description, the case where the mask (10) is moved in the direction in which the substrate is conveyed in the direction in which the mask is placed is described. However, the present invention is not limited thereto, and the shifting side may be performed. Or moving both the reticle 1 and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an embodiment of a photomask of the present invention, (a top view of the phantom, (b) is a cross-sectional view of the χ χ line of (4). Fig. 2 is a schematic view showing the structure of the TFT substrate. Fig. 3 is a partial cross-sectional plan view showing a schematic configuration of a laser annealing apparatus of the present invention. Fig. 4 is a block diagram showing the structure of a control mechanism of the above-described laser annealing apparatus. Fig. 5 is a view for explaining the use of the above TFT substrate. A plan view of the pre-alignment of the TFT substrate and the photomask is performed. Fig. 6 is a plan view showing the mask of the TFT substrate in motion. Fig. 7 shows the annealing target position of the TFT substrate. Fig. 8 is an explanatory view showing the positional relationship between the other annealing target position of the TFT substrate and the second alignment mark of the photomask. 27 201214022 [Main components Explanation of Symbols] D, Di, D2, L, L2, L3 Distance Dsj ' Ds2 Alignment Target Value Ls Movement Distance Target Value
Pi ' P2 間距 1 光罩 2 罩幕圖案 2A、2B 罩幕圖案列 3 微鏡片 4 對位記號 4A、4B、4C 第1〜第3對位記號 4a、 4b ' 4c 5 像素 6 資料線 7 閘極線 8 TFT基板 9 刻痕記號 9a、9b 細線 10 透明基板 11 遮光膜 12A、12B、12C 第1〜第3觀看窗 13 搬送機構 14 雷射光源 15 耦合光學系統 28 201214022 16 光罩台 17 線型照相機 18 對位機構 19 控制機構 20 氣體台 21 雷射光 22 開口部 23 驅動機構 24 感光部 25 照明用光源 26 影像處理部 27 記憶體 28 演算部 29 搬送機構驅動控制器 30 光罩台驅動控制器 31 對位機構驅動控制器 32 雷射光源驅動控制器 33 控制部 34 退火目標位置 29Pi ' P2 pitch 1 mask 2 mask pattern 2A, 2B mask pattern column 3 microlens 4 alignment mark 4A, 4B, 4C 1st to 3rd alignment mark 4a, 4b ' 4c 5 pixel 6 data line 7 gate Polar line 8 TFT substrate 9 Scratch marks 9a, 9b Thin line 10 Transparent substrate 11 Light-shielding film 12A, 12B, 12C First to third viewing window 13 Transport mechanism 14 Laser light source 15 Coupling optical system 28 201214022 16 Mask table 17 Line type Camera 18 Alignment Mechanism 19 Control Mechanism 20 Gas Table 21 Laser Light 22 Opening Port 23 Drive Mechanism 24 Photosensitive Unit 25 Illumination Light Source 26 Image Processing Unit 27 Memory 28 Calculation Unit 29 Transport Mechanism Drive Controller 30 Mask Table Drive Controller 31 registration mechanism drive controller 32 laser light source drive controller 33 control unit 34 annealing target position 29