TWI490657B - Exposure apparatus and photomask to be used for same - Google Patents

Description

Exposure device and the reticle used

The present invention relates to an exposure apparatus for transporting an object to be exposed in one direction while intermittently irradiating exposure light to the object to be exposed to form an exposure pattern, which is described in detail with respect to an entire surface of the object to be exposed. An exposure apparatus that forms a fine exposure pattern with high decomposition energy and high density, and a photomask used therefor.

The conventional exposure apparatus is an exposure apparatus that intermittently illuminates an exposure light that is conveyed at a constant speed through an illuminating mask to expose a mask pattern of the reticle to a specific position, and an exposure position of the reticle The photographing mechanism performs photographing at the position on the front side in the direction in which the object is conveyed, and the position between the object to be exposed and the mask is corrected based on the photographed image, and the timing of the exposure of the exposure light is controlled (for example, refer to Japanese Patent Laid-Open) Bulletin 2008-76709).

However, the conventional exposure apparatus directly transfers the mask pattern formed on the reticle to the object to be exposed by the exposure light that vertically penetrates the reticle, and the angle of view due to the light of the light source illuminating the reticle (Collimation half angle), the image of the pattern on the exposed body will be smudged, so that the decomposition energy can be reduced, and there is a possibility that the fine pattern cannot be exposed to form.

In the face of the above problem, the microlens is disposed on the side of the exposed body of the photomask corresponding to the mask pattern, and the mask pattern is reduced and projected onto the object to be exposed, but at this time, in the exposed body The exposure pattern cannot be formed at a portion between the lenses adjacent to each other in the direction of the vertical direction, and there is a problem that a high-density fine exposure pattern cannot be formed on the entire surface of the object to be exposed.

Here, the present invention has been made to solve the above problems, and an object thereof is to provide an exposure apparatus capable of forming a fine exposure pattern with high decomposition energy and high density at the entire surface of an object to be exposed, and a photomask used therefor.

In order to achieve the above object, the exposure apparatus of the present invention transports the object to be exposed in one direction, and simultaneously intermittently irradiates the exposure light to the object to be exposed through the mask to correspond to the plurality of masks formed on the mask. Forming an exposure pattern on the exposed object, wherein the mask is provided with a plurality of masks formed by arranging the plurality of mask patterns at a specific pitch along a direction perpendicular to a direction in which the object to be exposed is conveyed a mask pattern column and a plurality of microlenses formed on the object to be exposed by the respective mask patterns corresponding to the plurality of mask pattern columns to reduce and project the mask patterns onto the object to be exposed; Exposing a plurality of exposure patterns formed by the mask pattern column in the subsequent mask pattern to fill a plurality of exposure patterns formed on the front side of the mask pattern in the direction of the object to be exposed, and exposing The subsequent mask pattern columns and their respective microlenses are formed along the order in which the arrangement directions of the plurality of mask patterns are each offset by a specific size. According to the above configuration, when the object to be exposed is conveyed in one direction, a plurality of mask patterns are formed by arranging a plurality of mask patterns at a predetermined pitch in a direction substantially perpendicular to a direction in which the object to be exposed is conveyed, And a plurality of microlenses formed on the side of the object to be exposed to reduce the projection of each mask pattern onto the object to be exposed; and each of the masks can be arranged by the subsequent mask pattern Forming a plurality of exposure patterns to complement the position between the plurality of exposure patterns formed by the mask pattern column on the front side in the direction in which the object is transported, and exposing them to each other along the arrangement direction of the plurality of mask patterns Moving a specific size to form a subsequent mask pattern column and each of its corresponding microlenses, and intermittently exposing the exposure light to the object to be exposed through the mask to correspond to the plurality of masks formed on the mask The cover pattern forms an exposure pattern on the exposed body. At this time, since a plurality of microlenses capable of reducing and projecting each mask pattern onto the object to be exposed are provided on the side of the object to be exposed corresponding to each mask pattern, a fine exposure pattern can be formed with high decomposition energy. Moreover, since the mask pattern row located on the front side in the direction in which the object is to be transported and the respective microlenses corresponding thereto are formed in the arrangement direction of the plurality of mask patterns so as to be shifted by a specific size, The exposure is performed by filling a plurality of exposure patterns formed by the mask pattern column in the subsequent mask pattern between the plurality of exposure patterns formed on the front side of the mask pattern in the direction in which the object is conveyed. Therefore, an exposure pattern can be formed at a high density on the entire surface of the object to be exposed.

Then, in the projection imaging formed by the mask pattern toward the exposed object, an integer multiple of the width of the arrangement direction corresponding to the plurality of mask patterns, each of which is offset from the arrangement direction by the size The way to form the subsequent mask pattern column and its corresponding microlenses. Thereby, the projection pattern of the mask pattern in the mask pattern row at the position in front of the object to be exposed in the direction of the object to be exposed and the corresponding microlens are projected onto the image of the mask to be projected on the object to be exposed. Each of the masks formed by shifting the size in the direction perpendicular to the direction in which the object is conveyed is shifted by an integral multiple of the width in the direction perpendicular to the direction in which the object is conveyed, and an exposure pattern is formed on the object to be exposed. Therefore, the exposure pattern can be formed at a higher density.

Moreover, the reticle of the present invention is used in an exposure apparatus that transports an object to be exposed in one direction while intermittently illuminating exposure light to the object to be exposed to form an exposure pattern, having: along the object to be exposed The plurality of mask pattern columns formed by arranging the plurality of mask patterns at a specific pitch in a direction perpendicular to the vertical direction, and the mask patterns corresponding to the plurality of mask pattern columns are formed on the exposed body a plurality of microlenses that are projected onto the exposed object by the reduction of the mask patterns; and the plurality of exposure patterns formed by the subsequent mask pattern columns can be complemented by the front side of the object to be exposed Exposing between the plurality of exposure patterns formed by the mask pattern column to form the subsequent mask pattern column in such a manner that the arrangement direction of the plurality of mask patterns is offset by a specific size And their respective corresponding microlenses.

According to the above configuration, the plurality of mask pattern columns formed by arranging the plurality of mask patterns at a specific pitch along the approximate vertical direction of the transport direction of the object to be exposed, and each of the plurality of mask pattern columns a mask pattern formed on the side of the object to be exposed to reduce the projection pattern onto the plurality of microlenses on the object to be exposed; the plurality of exposure patterns formed by the subsequent mask pattern columns can be complemented by Exposure-like exposure is performed between a plurality of exposure patterns formed by the mask pattern row on the front side in the direction in which the exposure body is transported, and is formed to be subsequently shifted by a specific size along the arrangement direction of the plurality of mask patterns. The mask rows and the masks of the respective microlenses corresponding thereto are used to transport the object to be exposed in one direction, and at the same time, the exposure light is intermittently irradiated to form an exposure pattern. At this time, since a plurality of microlenses capable of reducing and projecting each mask pattern onto the object to be exposed are provided on the side of the object to be exposed corresponding to each mask pattern, a fine exposure pattern can be formed with high decomposition energy. Further, in a manner in which the arrangement directions of the plurality of mask patterns are shifted by a specific size, a mask pattern row and a corresponding microlens of the mask pattern row are formed at positions in front of the object transport direction. The plurality of exposure patterns formed by the subsequent mask pattern columns can be complemented by a plurality of exposure patterns formed on the front side of the mask pattern in the direction in which the object is to be transported. Therefore, an exposure pattern can be formed at a high density on the entire surface of the object to be exposed.

Furthermore, in the projection imaging formed by the mask pattern toward the exposed object, an integer multiple of the width of the array direction corresponding to the plurality of mask patterns is offset from the arrangement direction. The way to form the subsequent mask pattern column and its corresponding microlenses. Thereby, the projection pattern of the mask pattern in the mask pattern row at the position in front of the object to be exposed in the direction of the object to be exposed, and the corresponding microlenses, which are projected on the object to be exposed, are imaged by The size of the width of the object to be conveyed in the direction perpendicular to the vertical direction is an exposure pattern formed on the object to be exposed by using the mask formed by shifting the size in the direction perpendicular to the direction in which the object is to be conveyed. Therefore, the exposure pattern can be formed at a higher density.

Further, the plurality of mask patterns are formed on the surface of the transparent substrate, and the plurality of microlenses are formed on the other surface of the transparent substrate. Thereby, a mask having a plurality of mask patterns formed on the surface of the transparent substrate and having the plurality of microlenses formed on the other side of the transparent substrate is used, and an exposure pattern is formed on the exposed object. . At this time, since the mask pattern and the microlens are integrally formed on the same transparent substrate, the positional proof between the mask pattern and the microlens is not required. Therefore, the use of the mask is relatively easy.

Then, a mask substrate having the plurality of mask patterns and a lens substrate having the plurality of microlenses formed on one side of the surface are formed on the one side surface to allow the plurality of mask patterns Formed in such a manner that the plurality of microlenses correspond to each other. Thereby, the substrate for the mask having the plurality of mask patterns is formed on one side, and the substrate for the lens having the plurality of microlenses formed on one side of the surface, so that the plurality of masks A mask formed by overlapping the two substrates with each other in a pattern corresponding to the plurality of microlenses, and the mask is used to form an exposure pattern on the object to be exposed. At this time, since a plurality of mask patterns and a plurality of microlens systems are respectively formed on different substrates, when the mask pattern is defective or when the pitch is the same but the design is changed, only the mask is formed. The mask of the pattern can be exchanged with the substrate, so that the cost increase of the mask can be suppressed.

Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings. Fig. 1 is a schematic block diagram showing an embodiment of an exposure apparatus of the present invention. The exposure apparatus conveys the object to be exposed in one direction, and simultaneously intermittently irradiates the exposure light to the object to be exposed to form an exposure pattern, and includes a transport mechanism 1, a mask pedestal 2, a mask 3, and an exposure optical system 4. The photographing mechanism 5, the illumination mechanism 6, and the control mechanism 7. Further, the exposed body 8 used here is a pattern in which a specific shape function of a thin film transistor such as a TFT substrate is reversed in a specific relationship on a surface on the side of the transparent substrate.

The transport mechanism 1 transports the object 8 to be placed on the pedestal 9 and transports it in one direction (arrow A direction) at a specific speed, and moves the pedestal 9 by a moving mechanism such as a combination of a motor and a gear. Further, the transport mechanism 1 is provided with a speed sensor for detecting the moving speed of the pedestal 9 and a position sensor (not shown) for detecting the moving distance of the pedestal 9.

A mask pedestal 2 is provided above the transport mechanism 1. The mask pedestal 2 approaches the exposure target 8 (transported by the transport mechanism 1) and supports the mask 3 described later, and corresponds to the formation region of the mask pattern 13 including the mask 3. 10 and an area of the observation window 17 (refer to FIG. 2), an opening is formed in the center portion, and the peripheral portion of the mask 3 can be supported by positioning. Then, in a plane parallel to the surface of the pedestal 9, it can move in the direction perpendicular to the conveyance direction indicated by the arrow A of the exposure body 8, and can be moved together with the imaging mechanism 5 mentioned later. Further, it is also possible to rotate the center of the mask pedestal 2 as a rotation axis within a specific angle range as needed.

The photomask 3 is detachably supported by the mask pedestal 2. The reticle 3 is formed with a plurality of mask patterns (similar to the exposure pattern formed on the object to be exposed 8), and is supported by the exposed body 8 when being supported on the mask pedestal 2 Forming a plurality of mask pattern columns in which a plurality of mask patterns are formed at a certain pitch in a direction perpendicular to a vertical direction, and mask patterns corresponding to the plurality of mask pattern columns are formed on the side of the object to be exposed 8 to be Each of the mask patterns is reduced in a plurality of microlenses projected onto the object to be exposed 8; and the plurality of exposure patterns formed by the subsequent mask pattern columns can complement the mask pattern at the front side of the transport direction of the exposed object 8 The exposure is performed in a manner between a plurality of exposure patterns formed by the columns, and the subsequent arrangement directions (approximately the vertical direction of the direction in which the exposure body 8 is transported) of the plurality of mask patterns are each offset by a specific size to form a subsequent The mask pattern columns and their corresponding microlenses.

Specifically, as shown in FIG. 2(b), the photomask 3 is formed with an opaque chromium (Cr) film 12 on the side 11a of the transparent substrate 11 made of quartz, for example, the chromium (Cr) film 12 A plurality of mask patterns 13 formed by openings of a specific shape formed in the pattern forming region 10 shown by the broken line in Fig. 2(a) are formed. In addition, in FIG. 2(a), in order to avoid that the drawing is too complicated, the mask pattern 13 is simplified to be represented by a square shape corresponding to its outer shape. Further, as shown in FIG. 2(c), the surface 11b on the other side of the transparent substrate 11 is formed to have, for example, a magnification of 0.25 times and a focal length of 0.683 mm corresponding to the plurality of mask patterns 13 (corresponding to a wavelength of 355 nm). UV rays of a plurality of microlenses 14 . Then, in the projection imaging formed on the mask pattern 13 toward the object 8 to be exposed, an integer multiple of the width of the arrangement direction of the plurality of mask patterns 13 is shifted, and each of the sizes is shifted toward the arrangement direction. Each mask pattern column 15 and each microlens 14 are formed in a manner.

Further, in the mask 3 of the present embodiment, as shown in FIG. 3, for example, when the length of one side is W in the shape of a square, the projection pattern 13 is formed toward the projection formed on the object 8 to be imaged 16 (equivalent to In the size of the exposure pattern 30 (refer to FIG. 5) to be described later, a plurality of mask patterns 13 of the mask pattern rows 15 are formed at a pitch of 4 W, and the front side of the transport direction is made with respect to the first mask pattern row 15a. The second, third, and fourth mask pattern columns 15b, 15c, and 15d subsequent to the first mask pattern row 15a are arranged in the direction of the mask pattern 13 along the mask pattern columns 15 (the arrow A is approximately The vertical direction is formed by shifting W, 2W, and 3W, respectively, and the first to fourth mask pattern columns 15a to 15d are formed in parallel at a distance of 4 W. Further, as shown in FIG. 2(a), three sets of mask patterns 15 are arranged in parallel (the first to fourth mask pattern rows 15a to 15d are one set). Therefore, an exposure pattern is formed by repeated exposure of a plurality of mask patterns 13.

Further, as shown in FIG. 2(a), the chromium (Cr) film 12 of the mask 3 is formed at a side of the pattern forming region 10 and at a distance D from the first mask pattern row 15a. Each of the mask pattern rows 15 has an approximately parallel elongated opening. In the opening portion, the observation window 17 on the surface of the object 8 to be exposed can be observed by the imaging unit 5 which will be described later.

Next, as shown in FIG. 1, the microlens 14 side is used as the object to be exposed 8, and the observation window 17 is positioned as the front side of the object 8 in the direction in which the object 8 is conveyed (arrow A direction), and the mask 3 is positioned and fixed. To the mask pedestal 2.

An exposure optical system 4 is formed above the mask pedestal 2. The exposure optical system 4 is configured to include a light source 18, a cylindrical lens 19, and a condensing mirror 20 for the illuminator 3 to illuminate the uniform light source L1.

The light source 18 can emit ultraviolet light of, for example, 355 nm, and is, for example, a flash lamp or an ultraviolet light-emitting laser light source that is controlled by a control unit 7 to be described later. Further, the cylindrical lens 19 is disposed in front of the radiation direction of the light source light L1 emitted from the light source 18 so that the light source light L1 can have a uniform luminance distribution in a cross section perpendicular to the optical axis of the exposure optical system 4. Further, as a mechanism for making the luminance distribution of the light source ray L1 uniform, it is not limited to the cylindrical lens 19, and a light guide or other conventional mechanism may be used. Next, the condensing mirror 20 is disposed such that the front focus is aligned with the output end surface 19a of the cylindrical lens 19 so that the light source L1 emitted from the cylindrical lens 19 becomes parallel light and is irradiated to the reticle 3.

The imaging unit 5 is provided on the front side in the transport direction indicated by the arrow A of the exposure body 8 of the exposure optical system 4. The photographing mechanism 5 is a reference position which is a positioning reference function pattern formed on the object 8 to be exposed, and a reference mark formed in the observation window 17 of the mask 3, on the front side in the transport direction of the exposure position of the mask 3. At the same time, in the plane parallel to the pedestal 9, a linear camera in which the light receiving elements are arranged linearly in the direction perpendicular to the direction in which the object 8 is conveyed (the direction of the arrow A) is arranged, and the center of the long side is arranged. The shaft is disposed in such a manner that the long-side central axis of the observation window 17 of the reticle 3 is aligned. In addition, in FIG. 1, the symbol 21 is a total reflection mirror for bending the optical path of the photographing mechanism 5.

The illumination unit 6 is provided on the lower side of the pedestal 9 of the transport mechanism 1 in accordance with the imaging area of the imaging unit 5. The illumination mechanism 6 is capable of illuminating the object to be exposed 8 with illumination light composed of visible light that blocks ultraviolet rays from the lower side, so that the imaging mechanism 5 can observe the functional pattern formed on the surface of the object 8 to be exposed, for example, Halogen lamps, etc. In addition, the illumination mechanism 6 may be disposed above the pedestal 9 to illuminate in a scattered manner.

A control mechanism 7 that connects the transport mechanism 1, the photographing mechanism 5, the light source 18, the mask pedestal 2, and the illumination mechanism 6 is provided. The control mechanism 7 transports the object 8 to be exposed in one direction, and simultaneously irradiates the exposure light L2 to the object 8 to be exposed via the mask 3 to form an exposure corresponding to the plurality of mask patterns 13 of the mask 3. The pattern 30 is controlled such that the pattern and the function pattern formed on the object to be exposed 8 overlap each other. As shown in FIG. 4, the control unit 7 includes an image processing unit 22, an arithmetic unit 23, a memory 24, and The conveyance mechanism drive controller 25, the light source drive controller 26, the mask pedestal drive controller 27, the illumination mechanism drive controller 28, and the control unit 29.

The image processing unit 22 performs image processing on the surface of the object 8 to be exposed and the image of the reference mark of the reticle 3 acquired by the imaging unit 5 to detect the function pattern preset on the object 8 to be exposed. The position of the reference position and the reference mark on the reticle 3.

Further, the calculation unit 23 calculates the distance between the reference position on the object 8 to be exposed detected by the image processing unit 22 and the position of the reference mark on the reticle 3, and stores the result in the memory 24 to be described later. The target value is compared, and the difference is output as a correction value to the mask pedestal drive controller 27, and the output value of the position sensor of the transport mechanism 1 is input to calculate the moving distance of the pedestal 9, and the result is The arrangement pitch W of the arrow A direction (transport direction) of the function pattern of the exposed body 8 stored in the memory 24 is compared, and when the pedestal 9 moves by a distance W, the lighting command (lighting source 18) is output to The light source drives the controller 26.

Further, the memory 24 stores the calculation result of the calculation unit 23 temporarily, and also records the distance between the moving speed V of the pedestal 9, the reference position on the exposed body 8, and the position of the reference mark of the reticle 3. Target value, and other initial settings.

Further, the transport mechanism drive controller 25 moves the pedestal 9 of the transport mechanism 1 at a fixed speed in the direction indicated by the arrow A, inputs the output value of the speed sensor of the transport mechanism 1, and stores it in the memory. The movement speeds of the pedestals 9 in 24 are compared, and the conveyance mechanism 1 is controlled so that the two are maintained in the same manner.

Next, the light source drive controller 26 intermittently lights the light source 18, and transmits the drive signal to the light source 18 in accordance with the lighting command input from the calculation unit 23.

Further, the mask pedestal drive controller 27 moves the mask pedestal 2 together with the photographing mechanism 5 in the approximately vertical direction of the transport direction indicated by the arrow A, and controls the mask pedestal based on the correction value input from the calculation unit 23. 2 moves.

Furthermore, the illumination mechanism drive controller 28 is used to cause the illumination mechanism 6 to turn on and off, and when the exposure start switch is activated, the illumination mechanism 6 is turned on, and when all exposure processes on the exposed body 8 are completed, the illumination is turned off. Way to control. Next, the control unit 29 controls and adjusts between the respective constituent components so that the respective constituent components can be appropriately driven.

Next, the operation of the exposure apparatus relating to the foregoing structure will be described. Here, a case where the quadrangular exposure pattern 30 whose side is W is formed at an arrangement pitch W in the vertical and horizontal directions will be described.

First, an operation mechanism (not shown) constituted by a keyboard or the like is input, for example, the moving speed V of the pedestal 9, the moving distance of the pedestal 9 from the start of exposure to completion of exposure, the power of the light source 18, and the lighting time, The distance D between the first mask pattern row 15 of the mask 3 and the observation window 17, the arrangement pitch W of the functional pattern formed on the object 8 to be exposed in the direction of the arrow A (transport direction), and the aforementioned exposure of the object 8 to be exposed The distance target value between the reference position set in advance by the function pattern and the reference mark formed by the mask 3 is stored in the memory 24 for initial setting.

Next, the object to be exposed 8 to which the surface is coated with the photosensitive resin is placed and positioned at a specific position on the pedestal 9 with the coated surface facing upward. Next, when the exposure start switch (not shown) is activated, the conveyance mechanism of the control mechanism 7 is activated to drive the controller 25 so that the pedestal 9 moves in the direction of the arrow A at the speed V. At this time, the transport mechanism drive controller 25 inputs the output value of the speed sensor of the transport mechanism 1 and controls the transport mechanism 1 so that the pedestal 9 moves in comparison with the speed V stored in the memory 24. The speed is maintained at V. Further, when the exposure start switch is activated, the illumination mechanism drive controller 28 is also activated to illuminate the illumination mechanism 6. Simultaneously, the photographing mechanism 5 is activated to start photographing.

When the exposed object 8 is transported by the movement of the pedestal 9, the function pattern located on the front side in the transport direction (arrow A direction) reaches the photographing area of the photographing mechanism 5 in the functional pattern formed by the exposed body 8, and the photographing mechanism 5 The aforementioned functional pattern is captured through the observation window 17 of the reticle 3, and the reference mark of the reticle 3 is also taken. Next, the electronic signals of the photographic images are output to the image processing unit 22 of the control unit 7.

The image processing unit 22 performs image processing on the captured image electronic signal input from the imaging unit 5, and detects the reference position set in advance by the function pattern of the exposure target 8 and the position of the reference mark of the reticle 3. And the positional data is output to the calculation unit 23.

The calculation unit 23 calculates the distance between the positional data of the reference position input from the image processing unit 22 and the reference mark of the mask 3, and reads the two from the memory 24. The target value of the distance between the two is compared, and the difference is used as a correction value and output to the mask pedestal drive controller 27.

The mask pedestal drive controller 27 moves the mask pedestal 2 in the direction perpendicular to the arrow A direction (transport direction) in the plane parallel to the pedestal 9 in accordance with the correction value input from the calculation unit 23 to perform the exposure body 8 Positioning with the reticle 3. Further, this operation is often performed during the exposure operation on the entire surface of the object 8 to be exposed, and the positional deviation caused by the horizontal deviation of the exposure body 8 in the vertical direction of the arrow A can be avoided.

Further, when the image processing unit 22 performs image processing on the electronic signal of the captured image input from the imaging unit 5, and detects the function pattern on the front side in the transport direction (arrow A direction) of the exposure target 8, The calculation unit 23 calculates the moving distance of the pedestal 9 since the detection of the function pattern based on the output value of the position sensor of the transport mechanism 1 and compares it with the reticle 3 stored in the memory 24. The distance D between the first mask pattern column 15a and the observation window 17 is compared. Next, when the moving distance of the pedestal 9 coincides with the aforementioned distance D, the calculation unit 23 outputs a lighting command of the lighting source 18 to the light source driving controller 26. The light source drive controller 26 outputs the drive signal to the light source 18 in accordance with the aforementioned lighting command. Thereby, the light source 18 is illuminated at a specific power for a specific time according to the aforementioned initial set value.

The light source light L1 of the ultraviolet light emitted from the light source 18 is made uniform by the cylindrical lens 19, and then converted into parallel light by the condensing mirror 20 and irradiated to the reticle 3. The exposure light L2 passing through the reticle 3 is focused on the object to be exposed 8 by the microlens 14, and the projection pattern 13 of the reticle 3 is reduced and projected as shown in FIG. A quadrangular exposure pattern 30 having one side W is formed on the object 8 to be exposed.

As a result, as shown in FIG. 3, the first exposure pattern row 31a corresponding to the first mask pattern row 15a is formed, and the first exposure pattern row 31a is shifted in the vertical direction of the arrow A direction (transport direction). After W, the second exposure pattern row 31b corresponding to the second mask pattern row 15b is formed, and the first exposure pattern row 31a is shifted by 2 W in the vertical direction of the arrow A direction (transport direction), and is formed corresponding to the third. The third exposure pattern row 31c of the mask pattern row 15c is formed to have a fourth offset corresponding to the fourth mask pattern column 15d after being shifted by 3 W in the vertical direction of the arrow A direction (transport direction) with respect to the first exposure pattern row 31a. Exposure pattern column 31d.

Further, the calculation unit 23 performs a function on the exposure body 8 with respect to the moving distance of the pedestal 9 obtained from the output value of the position sensor of the transport mechanism 1 and the initial setting value stored in the memory 24. The patterns are compared in the arrangement pitch W of the arrow A direction (transport direction), and when the two match, the lighting command of the light source 18 is output to the light source drive controller 26. Thereby, the light source 18 is illuminated for a specific time at a specific power according to the initial setting value.

The light source light L1 of the ultraviolet light emitted from the light source 18 is irradiated to the reticle 3 as described above. Then, the exposure light L2 of the reticle 3 is projected onto the object 8 to be exposed, and the quadrilateral exposure pattern 30 having a length W on one side is formed on the object to be exposed 8 as described above. . Thereafter, each time the pedestal 9 moves by a distance W, the light source 18 is illuminated for a specific time to form the exposure pattern 30, and as shown in FIG. 5, formed by the subsequent second to fourth mask pattern columns 15b to 15d. A plurality of exposure patterns 30 are provided between the plurality of exposure patterns 30 formed by the first mask pattern row 15a located at the front side of the direction in which the exposure body 8 is transported (the direction of the arrow A), so as to cover the entire exposed image 8 The surface is formed with an exposure pattern 30.

Fig. 6 is an enlarged plan view showing the main part of another example of the reticle 3, which can be vertically and horizontally arranged to form a unit exposure pattern 30s having a large shape surrounded by a broken line in Fig. 7.

At this time, in the mask 3, the first exposure pattern 30a formed by exposing the first mask pattern row 15a on the front side in the transport direction (the direction of the arrow A) is, for example, a square having a length W, and is exposed to the first exposure. The second mask pattern row 15b for forming the second exposure pattern 30b (refer to FIG. 7) after the exposure in the direction indicated by the arrow A of the pattern 30a is disposed behind the first mask pattern column 15a. And the offset in the direction of the arrow A from the direction of the vertical direction is zero. Further, after the second mask pattern row 15b, the third mask pattern column 15c for the third exposure pattern 30c (refer to FIG. 7) arranged on the right side is formed by exposure of the first exposure pattern 30a in the direction of the arrow A. Then, it is disposed at a position shifted by W from the first mask pattern column 15a toward the direction slightly shorter than the arrow A. Next, after the third mask pattern row 15c, the fourth mask pattern for forming the fourth exposure pattern 30d (refer to FIG. 7) is formed by exposure to the rear side in the transport direction indicated by the arrow A of the third exposure pattern 30c. The column 15d is disposed at a position shifted by W from the first mask pattern column 15a toward the direction slightly shorter than the arrow A. Further, after the fourth mask pattern row 15d is rearward, the first to fourth mask pattern columns 15a to 15a are provided at a position shifted by 2 W from the first mask pattern row 15a in the direction perpendicular to the arrow A direction. A mask pattern column composed of the same combination of 15d. Next, the arrangement pitch of the first to fourth mask pattern rows 15a to 15d in the direction of the arrow A is, for example, a pitch of 3W.

In the case of using the photomask 3 formed as described above, the light source 18 is intermittently illuminated for exposure when the exposure body 8 is moved by a distance of 2 W in the direction of the arrow A. Thereby, as shown in FIG. 7, the exposure pattern 30 formed by the mask pattern 15 can be used to complement the plurality of first exposure patterns 30a formed by the first mask pattern column 15a. An exposure pattern 30 is formed on the entire surface of the exposed body 8.

At this time, the unit exposure pattern 30s surrounded by the broken line in FIG. 7 is formed by the first to fourth exposure patterns 30a to 30d, and the unit exposure pattern 30s is vertically and horizontally arranged. Thereby, when the exposure pattern having a large shape is formed vertically and horizontally at a specific pitch, the exposure pattern can be formed by dividing into a plurality of minute patterns.

In addition, the order of arrangement of the first to fourth mask pattern rows 15a to 15d is not limited to the above-described embodiment, and may be appropriately replaced. Further, the arrangement pitch of each mask pattern row and the exposure timing are set in accordance with the pattern pitch previously formed on the object to be exposed 8.

Further, in the above-described embodiment, the mask is formed by forming a plurality of mask patterns 13 on one side surface 11a of the transparent substrate 11, and forming a plurality of microlenses 14 on the other side surface 11b of the transparent substrate 11. The case of 3 is described, but the present invention is not limited thereto, and may be a substrate for a mask in which a plurality of mask patterns 13 are formed on one side surface, and a lens in which the plurality of microlenses 14 are formed at one side surface. The mask 3 is formed by overlapping the plurality of mask patterns 13 and the plurality of microlenses 14 in correspondence with each other to form the mask 3.

1. . . Transport agency

2. . . Mask pedestal

3. . . Mask

4. . . Exposure optical system

5. . . Photography agency

6. . . Lighting agency

7. . . Control mechanism

8. . . Exposed body

9. . . Pedestal

10. . . Mask pattern forming area

11. . . Transparent substrate

11a. . . One side

11b. . . The other side

12. . . Chrome film

13. . . Mask pattern

14. . . Microlens

15. . . Mask pattern column

15a~15d. . . Mask pattern column

16. . . Projection imaging

17. . . Observation window area

18. . . light source

19. . . Cylindrical lens

19a. . . Output end face

20. . . Condenser

twenty one. . . Total reflection mirror

twenty two. . . Image processing department

twenty three. . . Calculation department

twenty four. . . Memory

25. . . Transport mechanism drive controller

26. . . Light source drive controller

27‧‧‧Mask pedestal drive controller

28‧‧‧Lighting mechanism drive controller

29‧‧‧Control Department

30‧‧‧ each exposure pattern

30a~30d‧‧‧ exposure pattern

30s‧‧‧unit exposure pattern

31a~31d‧‧‧Exposure pattern column

L1, L2‧‧‧ source light

Fig. 1 is a schematic block diagram showing an embodiment of an exposure apparatus of the present invention.

Fig. 2 is a schematic view showing the structure of a photomask used in the exposure apparatus of the present invention, wherein (a) is a plan view, (b) is a side view, and (c) is a bottom view.

Figure 3 is a partially enlarged plan view of the reticle.

Fig. 4 is a block diagram showing the structure of a control mechanism of the exposure apparatus.

Fig. 5 is a plan view showing an exposure pattern formed on the object to be exposed using the mask.

Figure 6 is a schematic plan view of another example of the reticle.

Figure 7 is a schematic plan view of an exposure pattern formed using the reticle of Figure 6.

3. . . Mask

10. . . Mask pattern forming area

11. . . Transparent substrate

11a. . . One side

11b. . . The other side

12. . . Chrome film

13. . . Mask pattern

14. . . Microlens

15. . . Mask pattern column

15a~15d. . . Mask pattern column

17. . . Observation window area

Claims (6)

An exposure device is configured to transport an exposed body having a plurality of patterns on a surface in one direction, and each time the exposed object is moved by a distance equal to the arrangement pitch of the pattern in the transport direction, the exposure is intermittently exposed. The light is irradiated to the exposed body through the reticle to form an exposure pattern on the pattern of the exposed object corresponding to the plurality of mask patterns formed on the reticle, wherein the reticle is provided with: Forming a plurality of mask patterns in a row at a specific pitch along a direction perpendicular to a direction in which the object to be exposed is conveyed, and an integer multiple of a matching pitch of the pattern in the same direction in the direction in which the object to be exposed is transported a plurality of mask pattern columns formed by the pitches, and respective mask patterns corresponding to the plurality of mask pattern columns are formed on the object to be exposed to project the mask patterns onto the object to be exposed a plurality of microlenses; a plurality of exposure patterns formed by the subsequent mask pattern columns complementing a plurality of the mask pattern columns located on the front side of the object to be exposed Between the exposure pattern and exposure camel, to the plurality of mask patterns along the arrangement direction of each offset manner to form the particular size of the subsequent mask patterns corresponding to the respective columns, and their respective microlenses. The exposure apparatus of claim 1, wherein the projection image formed on the exposed object is corresponding to the width of the arrangement direction of the plurality of mask patterns. The plurality of times of size, each of which is offset toward the arrangement direction to form the subsequent mask pattern column and its corresponding microlenses. A reticle is used for conveying an exposed body having a plurality of patterns on a surface thereof in one direction, and each time the exposed object is moved by a distance equal to the arrangement pitch of the pattern in the transport direction, and simultaneously spaced apart An exposure apparatus for irradiating exposure light to the object to be exposed to form an exposure pattern, characterized in that: the plurality of mask patterns are arranged in a row at a specific pitch along a substantially vertical direction of a direction in which the object to be exposed is conveyed And forming a plurality of mask pattern columns formed by the integer multiple of the arrangement pitch of the pattern in the direction in which the object is to be conveyed, and each mask pattern corresponding to each of the plurality of mask patterns Forming, on the object to be exposed, a plurality of microlenses that are projected onto the exposed object by the mask pattern; and complementing the exposed object by a plurality of exposure patterns formed by the subsequent mask pattern columns Exposing between the plurality of exposure patterns formed by the mask pattern row on the front side of the transport direction, and exposing each of the plurality of mask patterns in the arrangement direction Shift ways to form a certain size of the subsequent mask pattern columns and each microlens corresponding to each of. The reticle of claim 3, wherein in the projection imaging formed by the mask pattern toward the exposed object, an integer multiple of the width of the alignment direction corresponding to the plurality of mask patterns is used. The dimensions, each offset from the direction of the alignment, form the subsequent mask pattern column and its corresponding microlenses. The reticle of claim 3, wherein the plurality of mask patterns are formed on a side of the transparent substrate, and the plurality of microlenses are formed on the other side of the transparent substrate. The reticle of claim 3 or 4, wherein the plurality of mask patterns are associated with the plurality of microlens systems, and the masks of the plurality of mask patterns are formed at one side of the surface. The cover substrate and the lens substrate on which the plurality of microlenses are formed on one surface are formed to overlap each other.