TWI548947B - Exposure apparatus and photomask - Google Patents
Exposure apparatus and photomask Download PDFInfo
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- TWI548947B TWI548947B TW098137990A TW98137990A TWI548947B TW I548947 B TWI548947 B TW I548947B TW 098137990 A TW098137990 A TW 098137990A TW 98137990 A TW98137990 A TW 98137990A TW I548947 B TWI548947 B TW I548947B
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Description
本發明係一種曝光裝置及光罩,係關於一種利用接近且對向於被曝光體之光罩來進行特定圖案的曝光之曝光裝置,詳而言之,係可提高曝光圖案的解析度並進行微細圖案的曝光。The present invention relates to an exposure apparatus and a photomask, relating to an exposure apparatus for performing exposure of a specific pattern by using a mask close to and facing an object to be exposed, and more specifically, improving the resolution of the exposure pattern and performing Exposure of fine patterns.
習知的曝光裝置中,特別是近接式曝光裝置,係使光罩接近被曝光體,以使形成於光罩之圖案曝光在被曝光體上,其具有:下方一面具有可將光罩密接的密接平面之透明玻璃基板、用以使光罩吸著保持於密接平面之光罩吸著保持機構、以及用以保持透明玻璃基板以在光罩與被曝光體之間形成微小間隙之玻璃基板保持機構(例如,參照日本特開2005-300753號公報)。In a conventional exposure apparatus, particularly a proximity exposure apparatus, the reticle is brought close to the object to be exposed, so that the pattern formed on the reticle is exposed on the object to be exposed, and the lower surface has a mask that can be closely attached. a transparent glass substrate that is in close contact with the flat surface, a reticle absorbing and holding mechanism for absorbing and holding the reticle to the close contact plane, and a glass substrate for holding the transparent glass substrate to form a small gap between the reticle and the object to be exposed The mechanism (for example, refer to Japanese Laid-Open Patent Publication No. 2005-300753).
然而,此種習知的曝光裝置係利用垂直透過光罩的曝光光線來使形成於光罩上之圖案直接轉印在被曝光體上,但因光源有視角(平行半角)的存在,故被曝光體上圖案的圖像會模糊使得解析度降低,而有無法曝光形成微細圖案之問題。However, the conventional exposure apparatus uses the exposure light vertically transmitted through the reticle to directly transfer the pattern formed on the reticle to the object to be exposed, but since the light source has a viewing angle (parallel half angle), it is The image of the pattern on the exposure body is blurred so that the resolution is lowered, and there is a problem that the fine pattern cannot be exposed.
因此,本發明為解決上述問題,其目的在於提供一種可提高曝光圖案解析度並可將微細圖案曝光之曝光裝置及光罩。Accordingly, the present invention has been made to solve the above problems, and an object thereof is to provide an exposure apparatus and a photomask which can improve the resolution of an exposure pattern and can expose a fine pattern.
為達成上述目的,本發明之曝光裝置係使在設置於透明基板的一面之遮光膜形成有特定形狀的複數個開口之光罩接近且對向設置於被曝光體,並將光源光線照射在該光罩上以使對應於該開口的圖案曝光在該被曝光體上;其中分別對應於該光罩的各開口,於該被曝光體側係設置有使該各開口的圖像成像在該被曝光體上之複數個微透鏡。In order to achieve the above object, in the exposure apparatus of the present invention, a mask having a plurality of openings having a specific shape formed on a light-shielding film provided on one surface of a transparent substrate is disposed close to and opposed to the object to be exposed, and the light source is irradiated thereon. Forming, on the reticle, a pattern corresponding to the opening on the object to be exposed; wherein each of the openings corresponding to the reticle is disposed on the side of the object to be exposed, and an image of the openings is imaged at the A plurality of microlenses on the exposed body.
藉由此種構成來使在設置於透明基板的一面之遮光膜形成有特定形狀的複數個開口之光罩接近且對向於被曝光體,且利用分別對應於該各開口而設置於被曝光體側之複數個微透鏡來使各開口的圖像成像在該被曝光體上,並將光源光線照射在光罩上以使對應於該開口的圖案曝光在被曝光體上。因此,可提高曝光圖案的解析度,例如即使是線寬3μm左右的微細圖案亦可利用近接式曝光來形成。藉此,即使是TFT基板之電晶體部等被要求高解析度的圖案曝光,亦可使用光學系統結構簡單且價廉之近接式曝光裝置來進行,並可降低TFT基板的製造成本。With such a configuration, the masks having a plurality of openings having a specific shape formed on the light-shielding film provided on one surface of the transparent substrate are approached and opposed to the object to be exposed, and are respectively exposed to be exposed corresponding to the respective openings. A plurality of microlenses on the body side image an image of each opening on the object to be exposed, and illuminate the light source on the reticle to expose a pattern corresponding to the opening on the object to be exposed. Therefore, the resolution of the exposure pattern can be improved. For example, even a fine pattern having a line width of about 3 μm can be formed by proximity exposure. Thereby, even if the transistor portion of the TFT substrate is exposed to a pattern having a high resolution, it is possible to use a proximity exposure apparatus having a simple optical system and a low cost, and the manufacturing cost of the TFT substrate can be reduced.
又,該各微透鏡係形成於與形成有該透明基板之該開口的面為相反側的面。藉以利用於與形成有透明基板之開口的面為相反側的面所形成之各微透鏡來使各開口的圖像成像在被曝光體上。此時,由於微透鏡係形成在與形成有透明基板之開口的面為相反側的面,故不需對上述開口與微透鏡進行對位。因此,光罩的處理會變得較為容易。Further, each of the microlenses is formed on a surface opposite to a surface on which the opening of the transparent substrate is formed. The microlenses formed on the surface opposite to the surface on which the opening of the transparent substrate is formed are used to form an image of each opening on the object to be exposed. At this time, since the microlens is formed on the surface opposite to the surface on which the opening of the transparent substrate is formed, it is not necessary to align the opening with the microlens. Therefore, the processing of the mask becomes easier.
更進一步地,該各微透鏡係形成於另一透明基板的一面。藉以利用形成於另一透明基板的一面之各微透鏡來使透明基板各開口的圖像成像在被曝光體上。此時,形成有複數個開口之光罩與微透鏡係形成為分別的個體,因此當光罩有缺陷時,或之後產生缺陷時,只要更換光罩即可,故可抑制光罩成本的增加。Further, each of the microlenses is formed on one surface of another transparent substrate. Thereby, an image of each opening of the transparent substrate is imaged on the object to be exposed by using the respective microlenses formed on one side of the other transparent substrate. In this case, the photomask and the microlens system in which the plurality of openings are formed are formed as separate bodies. Therefore, when the photomask has a defect or a defect occurs later, the photomask can be replaced, so that the cost of the mask can be suppressed. .
然後,該被曝光體係藉由搬送機構而被平行地以特定速度搬送至該光罩的一面,該光源光線係間歇地照射在該光罩上。藉此,將光源光線間歇地照射在光罩上,並利用各微透鏡來使光罩各開口的圖像成像在藉由搬送機構而被平行地以特定速度搬送至光罩的一面之被曝光體上,以使對應於上述開口之圖案依序曝光在被曝光體上。因此,可一邊連續地依序搬送一邊使複數個被曝光體曝光,並可提高每單位時間的曝光處理數。又,此時所使用之光罩至少在被曝光體搬送方向的寬度可較同方向之被曝光體的曝光區域寬度要小,故可縮小光罩形狀並降低光罩的製造成本。Then, the exposed system is transported in parallel to a side of the reticle at a specific speed by a transport mechanism, and the light source ray is intermittently irradiated onto the reticle. Thereby, the light source light is intermittently irradiated onto the reticle, and each microlens is used to image the image of each opening of the reticle to be exposed to the side of the reticle at a specific speed in parallel by the transport mechanism. The body is sequentially exposed on the object to be exposed in a pattern corresponding to the opening. Therefore, it is possible to expose a plurality of exposed objects while continuously transporting sequentially, and to increase the number of exposure processes per unit time. Further, since the width of the mask used at this time is at least smaller than the width of the exposure region of the object to be exposed in the same direction, the mask shape can be reduced and the manufacturing cost of the mask can be reduced.
又,本發明之光罩係具有被形成於設置在透明基板的一面之遮光膜並具有特定形狀之複數個開口;以及分別對應於該各開口而設置於該透明基板的另一面,以使該開口的圖像成像在接近且對向設置之被曝光體上之複數個微透鏡。Further, the photomask of the present invention has a plurality of openings formed in a light shielding film provided on one surface of the transparent substrate and having a specific shape; and the other surface of the transparent substrate corresponding to the openings, respectively, so that the mask The image of the opening is imaged at a plurality of microlenses on the exposed body that are disposed adjacent and opposite each other.
藉由此種結構,利用分別對應於各開口而設置於透明基板的另一面之複數個微透鏡,來使被形成於設置在透明基板的一面之遮光膜並具有特定形狀的複數個開口的圖像,成像在接近且對向設置之被曝光體上。因此,可提高曝光圖案的解析度,例如即使是線寬3μm左右的微細圖案亦可利用近接式曝光來形成。藉此,即使是TFT基板之電晶體部等被要求高解析度的圖案曝光,亦可使用光學系統的結構簡單且價廉之近接式曝光裝置來進行,並可降低TFT基板的製造成本。With such a configuration, a plurality of microlenses provided on the other surface of the transparent substrate corresponding to the respective openings are used to form a plurality of openings having a specific shape formed on the light shielding film provided on one surface of the transparent substrate. For example, imaging is performed on the exposed body that is placed close to and opposite. Therefore, the resolution of the exposure pattern can be improved. For example, even a fine pattern having a line width of about 3 μm can be formed by proximity exposure. Thereby, even if the transistor portion of the TFT substrate is exposed to a high-resolution pattern, it is possible to use a proximity-type exposure apparatus having a simple and inexpensive optical system, and it is possible to reduce the manufacturing cost of the TFT substrate.
以下,根據添附圖式詳細說明本發明之實施形態。圖1係顯示本發明之曝光裝置實施形態的概略結構之前視圖。該曝光裝置係利用接近且對向於被曝光體之光罩來使特定圖案曝光,係具有載置台1、光源2、光罩台3、光罩4及準直透鏡5。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a front view showing a schematic configuration of an embodiment of an exposure apparatus of the present invention. The exposure apparatus has a mounting table 1, a light source 2, a mask table 3, a mask 4, and a collimator lens 5 by exposing a specific pattern to a mask that is close to and facing the object to be exposed.
上述載置台1係於上面形成有平坦載置面1a,並用以使被曝光體6定位(例如吸著保持)於該載置面1a上,可藉由移動機構(省略圖式)而在平行於載置面1a之面內朝X軸及Y軸方向移動,同時亦可向Z軸方向移動,並可繞垂直於載置面1a的中心軸轉動。又,在圖1中Y軸方向為穿透紙面朝向深處的方向。The mounting table 1 has a flat mounting surface 1a formed thereon, and is used for positioning (for example, absorbing and holding) the exposed object 6 on the mounting surface 1a, which can be paralleled by a moving mechanism (omitted from the drawing) The surface of the mounting surface 1a moves in the X-axis and Y-axis directions, and is also movable in the Z-axis direction and is rotatable about a central axis perpendicular to the mounting surface 1a. Further, in Fig. 1, the Y-axis direction is a direction in which the penetrating paper surface faces deep.
上述載置台1上方設置有光源2。該光源2係對被曝光體6照射紫外線之光源光線L1,以使被塗佈在被曝光體6表面的感光性樹脂曝光,為用以放射紫外線(例如波長355nm)之氙氣燈、超高壓水銀燈、紫外線發光雷射光源等。又,例如,光源光線L1的放射方向前方設置有聚光鏡14,以利用該聚光鏡1來將光源光線L1暫時聚光。然後,於聚光點P設置有向箭頭A、B方向移動而用以將從光源2朝向被曝光體6的光線路徑開閉之光閘7。A light source 2 is disposed above the mounting table 1. The light source 2 is a source light L1 that irradiates the exposed object 6 with ultraviolet light to expose the photosensitive resin coated on the surface of the object to be exposed 6, and is a xenon lamp or an ultrahigh pressure mercury lamp for emitting ultraviolet rays (for example, a wavelength of 355 nm). , ultraviolet light-emitting laser light source, etc. Further, for example, a condensing mirror 14 is disposed in front of the radiation direction of the light source ray L1, and the condensing mirror 1 temporarily condenses the source ray L1. Then, a shutter 7 that moves in the directions of arrows A and B and opens and closes the light path from the light source 2 toward the object to be exposed 6 is provided at the condensing point P.
上述載置台1與光源2之間設置有對向於載置台1之光罩台3。該光罩台3係用以使後述光罩4平行地接近且對向保持於被載置在載置台1之被曝光體6的表面,以對應於光罩4的圖案形成區域而在中央部形成開口窗8,並定位限制光罩4以保持其周緣附近的部位。A mask table 3 facing the mounting table 1 is provided between the mounting table 1 and the light source 2. The mask table 3 is configured such that the mask 4 described later is brought into close proximity and held in opposition to the surface of the object to be exposed 6 placed on the mounting table 1 so as to correspond to the pattern forming region of the mask 4 at the center portion. An opening window 8 is formed and positioned to restrict the reticle 4 to maintain a portion near its circumference.
上述光罩台3上可裝卸地保持有光罩4。如圖2所示,該光罩4係在設置於例如石英玻璃等透明基板9的一面9a之例如鉻(Cr)等遮光膜10上,以特定間隔陣列式地形成有特定形狀之複數開口(圖案)11,在與形成有上述透明基板9的開口11之面9a的相反側之面9b,分別對應於各開口11而形成有例如倍率為0.25倍,相對於波長355nm的紫外線則焦距為0.683mm之複數個微透鏡12,以使各開口11的圖像成像在被曝光體6上。此時,如圖1所示,光罩4係以形成有微透鏡12的那一側為被曝光體6側而被保持於光罩台3。The mask 4 is detachably held by the mask table 3. As shown in FIG. 2, the photomask 4 is formed on a light-shielding film 10 such as chromium (Cr) provided on one surface 9a of a transparent substrate 9 such as quartz glass, and a plurality of openings of a specific shape are formed in an array at a predetermined interval ( The pattern 11 has a magnification of 0.25 times corresponding to each of the openings 11 on the surface 9b opposite to the surface 9a on which the opening 11 of the transparent substrate 9 is formed, and a focal length of 0.683 with respect to ultraviolet rays having a wavelength of 355 nm. A plurality of microlenses 12 of mm are formed so that an image of each opening 11 is imaged on the object 6 to be exposed. At this time, as shown in FIG. 1, the mask 4 is held by the mask stage 3 with the side on which the microlens 12 is formed as the side of the object to be exposed 6.
上述光罩台3與光源2之間設置有準直透鏡5。該準直透鏡5係用以使光源2所放射出的光源光線L1成為平行光,並使其前焦點與上述聚光鏡14的聚光點P為一致。A collimator lens 5 is disposed between the mask stage 3 and the light source 2. The collimator lens 5 is configured to make the light source ray L1 emitted from the light source 2 into parallel light, and to make the front focus coincide with the condensed point P of the condensing mirror 14.
接下來說明依上述方式所構成之曝光裝置的動作。Next, the operation of the exposure apparatus constructed as described above will be described.
首先,打開光源2的開關以使光源2亮起。此時,光閘7為關閉狀態。經過特定時間而使光源2的發光穩定後,在其微透鏡12側係對向於載置台1的狀態下,定位光罩4並吸著保持而載置於光罩台3上。First, the switch of the light source 2 is turned on to illuminate the light source 2. At this time, the shutter 7 is in a closed state. After the light emission of the light source 2 is stabilized for a predetermined period of time, the photomask 4 is positioned and held by the photomask 2 in a state in which the microlens 12 side faces the mounting table 1, and is placed on the mask stage 3.
接下來,使表面塗佈有感光性樹脂的被曝光體6定位並吸著保持而載置於載置台1上之載置面1a上。之後,利用攝像機構(省略圖式)在相同視野內拍攝被預先形成於光罩4之定位記號與被預先形成於被曝光體6之定位記號,並利用控制機構(省略圖式)來控制載置台1使其向X軸及Y軸方向移動以使兩記號的位置一致,可依需要轉動特定角度來進行光罩4與被曝光體6的定位。然後,光罩4與被曝光體6的定位結束後,將載置台1向Z軸方向上升特定的量,以使被曝光體6表面與光罩4下面之間形成特定間隙。藉以利用形成於光罩4上面的開口11所對向之微透鏡12來成像在被曝光體6表面。Next, the object to be exposed 6 on which the photosensitive resin is applied is positioned, sucked and held, and placed on the mounting surface 1a on the mounting table 1. Thereafter, the positioning marks previously formed in the mask 4 and the positioning marks previously formed in the exposure target 6 are imaged in the same field of view by the imaging means (omitted from the drawing), and the control means (omitted from the drawing) is used to control the loading. The table 1 is moved in the X-axis and Y-axis directions so that the positions of the two marks coincide, and the position of the mask 4 and the object to be exposed 6 can be positioned by rotating a specific angle as needed. Then, after the positioning of the mask 4 and the object 6 to be exposed is completed, the stage 1 is raised by a specific amount in the Z-axis direction so that a specific gap is formed between the surface of the object 6 to be exposed and the lower surface of the mask 4. The microlens 12 opposed to the opening 11 formed on the mask 4 is used to image the surface of the object 6 to be exposed.
接著,打開曝光開關使光閘7向箭頭A方向移動且只打開特定時間以進行曝光。藉此,如圖3所示,光源2所放射之光源光線L1會照射到光罩4並通過形成於光罩4之開口11而成為曝光光線L2,藉由微透鏡12而被聚光在被曝光體6上。然後,上述開口11的圖像會因微透鏡12而被縮小投影在被曝光體6上,而在塗佈於表面之感光性樹脂上曝光形成有對應於開口11形狀的圖案。Next, the exposure switch is turned on to move the shutter 7 in the direction of the arrow A and only for a certain time to perform exposure. Thereby, as shown in FIG. 3, the light source light L1 emitted from the light source 2 is irradiated onto the reticle 4 and becomes the exposure light L2 through the opening 11 formed in the reticle 4, and is condensed by the microlens 12 Exposure body 6. Then, the image of the opening 11 is projected onto the object to be exposed 6 by the microlens 12, and a pattern corresponding to the shape of the opening 11 is formed on the photosensitive resin applied to the surface.
又,上述實施形態係針對使用了在同一透明基板9形成有開口11與微透鏡12的光罩4情況加以說明,但本發明不限於此,如圖4所示,亦可在與形成有開口11之光罩4不同的透明基板13上形成有微透鏡12。該情況下,只要將光罩4之形成有該開口11的面9a,密接於與同圖中如箭頭所示之上述另一透明基板13之形成有微透鏡12的面13a為相反側的面13b來使用即可。抑或只要能利用微透鏡12來使光罩4的開口11成像於被曝光體6表面,亦可使與光罩4之形成有開口11的面9a為相反側的面9b,密接於與上述另一透明基板13之形成有微透鏡12的面13a為相反側的面13b。Further, the above embodiment has been described with respect to the case where the mask 4 having the opening 11 and the microlens 12 formed on the same transparent substrate 9 is used. However, the present invention is not limited thereto, and as shown in FIG. A microlens 12 is formed on the different transparent substrate 13 of the mask 4 of 11. In this case, the surface 9a of the mask 4 on which the opening 11 is formed is in close contact with the surface opposite to the surface 13a of the other transparent substrate 13 on which the microlens 12 is formed as indicated by the arrow in the figure. 13b to use. Alternatively, as long as the opening 11 of the mask 4 can be formed on the surface of the object to be exposed 6 by the microlens 12, the surface 9b opposite to the surface 9a of the mask 4 in which the opening 11 is formed may be adhered to the other side. The surface 13a of the transparent substrate 13 on which the microlenses 12 are formed is the surface 13b on the opposite side.
又,以上的說明係針對將被保持於特定位置之被曝光體6進行曝光的情況加以敘述,但本發明不限於此,亦可一邊利用搬送機構來將被曝光體6平行地以特定速度搬送至光罩4的一面,一邊將光源光線L1以特定的時間間隔間歇地照射在光罩4,以將對應於光罩4的開口11之圖案曝光形成於被曝光體6的特定位置。此時,光源光線L1之間歇照射亦可使用閃光燈而進行,亦或藉由光閘7的開閉而進行。又,可設置用以拍攝光罩4所決定之曝光位置的被曝光體6之搬送方向前側的攝像機構,利用該攝像機構預先拍攝形成在被曝光體6的基準位置,以根據拍攝的影像來定位光罩4與被曝光體6,抑或拍攝與上述基準位置不同的基準位置,並根據該拍攝的影像來控制光源光線L1的照射時間點。Moreover, the above description has been described with respect to the case where the object to be exposed 6 held at a specific position is exposed. However, the present invention is not limited thereto, and the object to be exposed 6 may be transported in parallel at a specific speed by the transport mechanism. To one surface of the photomask 4, the light source light L1 is intermittently irradiated to the photomask 4 at specific time intervals to expose a pattern corresponding to the opening 11 of the photomask 4 to a specific position of the object 6 to be exposed. At this time, the intermittent irradiation of the light source light L1 may be performed using a flash lamp or by opening and closing the shutter 7. Further, an image pickup mechanism for photographing the front side of the object to be exposed of the exposure body 6 determined by the exposure position of the mask 4 can be provided, and the reference position formed on the object to be exposed 6 can be imaged in advance by the image pickup unit to be based on the imaged image. The photomask 4 and the object to be exposed 6 are positioned, or a reference position different from the above-described reference position is captured, and the irradiation time point of the light source light L1 is controlled based on the captured image.
1...載置台1. . . Mounting table
1a...載置面1a. . . Mounting surface
2...光源2. . . light source
3...光罩台3. . . Mask table
4...光罩4. . . Mask
5...準直透鏡5. . . Collimating lens
6...被曝光體6. . . Exposed body
7...光閘7. . . Shutter
8...開口窗8. . . Open window
9‧‧‧透明基板 9‧‧‧Transparent substrate
9a、9b‧‧‧面 9a, 9b‧‧‧
10‧‧‧遮光膜 10‧‧‧Shade film
11‧‧‧開口 11‧‧‧ openings
12‧‧‧微透鏡 12‧‧‧Microlens
13‧‧‧透明基板 13‧‧‧Transparent substrate
13a、13b‧‧‧面 13a, 13b‧‧‧
14‧‧‧聚光鏡 14‧‧‧Condenser
A、B‧‧‧箭頭 A, B‧‧ arrows
L1‧‧‧光源光線 L1‧‧‧Light source
L2‧‧‧曝光光線 L2‧‧‧Exposure light
P‧‧‧聚光點P‧‧‧ spotlight
圖1係顯示本發明曝光裝置實施形態的概略結構之正面圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front elevational view showing the schematic configuration of an embodiment of an exposure apparatus of the present invention.
圖2係顯示本發明光罩的一構成例之圖式,圖2(a)為俯視圖,圖2(b)為前視圖,圖2(c)為仰視圖。Fig. 2 is a view showing a configuration example of the reticle of the present invention, Fig. 2(a) is a plan view, Fig. 2(b) is a front view, and Fig. 2(c) is a bottom view.
圖3係顯示利用微透鏡之上述光罩開口的成像之說明圖。Fig. 3 is an explanatory view showing imaging of the above-described mask opening using a microlens.
圖4係顯示上述開口與微透鏡形成為分別的個體情況時的使用例之說明圖。Fig. 4 is an explanatory view showing an example of use when the opening and the microlens are formed as individual cases.
1...載置台1. . . Mounting table
1a...載置面1a. . . Mounting surface
2...光源2. . . light source
3...光罩台3. . . Mask table
4...光罩4. . . Mask
5...準直透鏡5. . . Collimating lens
6...被曝光體6. . . Exposed body
7...光閘7. . . Shutter
8...開口窗8. . . Open window
9...透明基板9. . . Transparent substrate
10...遮光膜10. . . Sunscreen
11...開口11. . . Opening
12...微透鏡12. . . Microlens
14...聚光鏡14. . . Condenser
A、B...箭頭A, B. . . arrow
L1...光源光線L1. . . Light source
P...聚光點P. . . Spotlight
Claims (4)
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TW098137990A TWI548947B (en) | 2009-11-10 | 2009-11-10 | Exposure apparatus and photomask |
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TW098137990A TWI548947B (en) | 2009-11-10 | 2009-11-10 | Exposure apparatus and photomask |
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TWI548947B true TWI548947B (en) | 2016-09-11 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088164A (en) * | 1994-06-21 | 1996-01-12 | Mitsubishi Electric Corp | Semiconductor photolithography device |
US6016185A (en) * | 1997-10-23 | 2000-01-18 | Hugle Lithography | Lens array photolithography |
JP2003149826A (en) * | 2001-11-16 | 2003-05-21 | Pentax Corp | Aligner and exposure method |
TW200745768A (en) * | 2005-09-30 | 2007-12-16 | Fujifilm Corp | Image exposure device |
-
2009
- 2009-11-10 TW TW098137990A patent/TWI548947B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088164A (en) * | 1994-06-21 | 1996-01-12 | Mitsubishi Electric Corp | Semiconductor photolithography device |
US6016185A (en) * | 1997-10-23 | 2000-01-18 | Hugle Lithography | Lens array photolithography |
JP2003149826A (en) * | 2001-11-16 | 2003-05-21 | Pentax Corp | Aligner and exposure method |
TW200745768A (en) * | 2005-09-30 | 2007-12-16 | Fujifilm Corp | Image exposure device |
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