TWI446122B - Exposure apparatus - Google Patents
Exposure apparatus Download PDFInfo
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- TWI446122B TWI446122B TW95136982A TW95136982A TWI446122B TW I446122 B TWI446122 B TW I446122B TW 95136982 A TW95136982 A TW 95136982A TW 95136982 A TW95136982 A TW 95136982A TW I446122 B TWI446122 B TW I446122B
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- side alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本發明係關於一種將基板及光罩之對準標記分別攝影，並以這些影像為基礎，進行基板與光罩之對位，以進行曝光之曝光裝置；詳細而言，係有關一種將基板及光罩之各對準標記同時成像於攝影手段之受光面，以縮短對位處理時間之曝光裝置。The present invention relates to an exposure apparatus for separately photographing an alignment mark of a substrate and a photomask, and performing alignment of the substrate and the photomask based on the image; in detail, a substrate and The alignment marks of the photomask are simultaneously imaged on the light receiving surface of the photographing means to shorten the exposure processing time of the exposure apparatus.
習知曝光裝置係包括：將塗佈有感光性樹脂之基板載置並保持於上面之載台；使光罩迫近面對該基板並加以保持之光罩載台；以及，將在前述基板所形成之基板側對準標記、和在前述光罩所形成之光罩側對準標記，分別捕捉到同一視野內加以拍攝之攝影手段；首先，在使光罩側對準標記成像在攝影手段受光面之狀態下，移動攝影手段，將光罩側對準標記定位在攝影手段之視野內之中央部，其次，再於使基板側對準標記成像在上述受光面之狀態下，移動載台，將基板側對準標記定位在攝影手段之視野內之中央部，以進行基板與光罩之對位動作(例如，請參照日本專利特開平第5－196420號公報)。The conventional exposure apparatus includes: a stage on which a substrate coated with a photosensitive resin is placed and held; a mask holder that urges the mask to face the substrate and holds the same; and, in the substrate Forming the substrate side alignment mark and the reticle side alignment mark formed by the reticle, respectively capturing the photographic means for photographing in the same field of view; first, imaging the reticle side alignment mark on the photographic means to receive light In the state of the surface, the moving photographing means positions the mask side alignment mark at the center of the field of view of the photographing means, and secondly, moves the stage while the substrate side alignment mark is imaged on the light receiving surface. The substrate side alignment mark is positioned at the center of the field of view of the photographing means to perform the alignment operation between the substrate and the mask (for example, refer to Japanese Laid-Open Patent Publication No. Hei No. 5-196420).
但是，這種習知曝光裝置，由於基板側對準標記和光罩側對準標記之位置會在攝影手段之光軸方向偏移，所以不能使兩對準標記同時成像於攝影手段之受光面。因此，在進行如上所述之基板與光罩之對位時，首先，必須調整光罩側對準標記之位置，使之成像於攝影手段之受光面，其次，必須再調整基板側對準標記之位置，使之成像於前述受光面，因而拉長對位處理時間。However, in the conventional exposure apparatus, since the positions of the substrate-side alignment mark and the mask-side alignment mark are shifted in the optical axis direction of the photographing means, the two alignment marks cannot be simultaneously imaged on the light-receiving surface of the photographing means. Therefore, when performing the alignment of the substrate and the reticle as described above, first, the position of the reticle side alignment mark must be adjusted to be imaged on the light receiving surface of the photographic means, and secondly, the substrate side alignment mark must be adjusted. The position is such that it is imaged on the aforementioned light receiving surface, thereby lengthening the alignment processing time.
本發明之目的即針對這種問題，提供一種能將基板及光罩之對位處理時間加以縮短之曝光裝置。SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus capable of shortening the alignment processing time of a substrate and a photomask in response to such a problem.
為達前述目的，依據本發明作成之曝光裝置，其係包含：一載台，將塗佈有感光性樹脂之一基板載置並保持於上面；一光罩載台，裝設於前述載台之上方，使一光罩迫近面對前述基板並加以保持；以及，一攝影手段，將形成於前述基板上之一基板側對準標記、和形成於前述光罩上之一光罩側對準標記，分別捕捉到同一視野內加以拍攝；且係藉由前述攝影手段所攝得之前述基板側及光罩側對準標記之各影像，相對移動前述載台及光罩載台，俾使前述基板與光罩對位，以進行曝光之曝光裝置；其特徴為，該曝光裝置包含一光學距離修正手段，可使前述攝影手段之受光面與基板間之光學距離、以及前述攝影手段之受光面與光罩間之光學距離，約略一致。In order to achieve the above object, an exposure apparatus according to the present invention includes: a stage on which a substrate coated with a photosensitive resin is placed and held thereon; and a mask stage mounted on the stage Above, a photomask is brought into close proximity to the substrate and held; and a photographing means aligns one of the substrate side alignment marks formed on the substrate and one of the mask sides formed on the mask Markings are captured in the same field of view and photographed; and the respective images of the substrate side and the mask side alignment marks captured by the photographing means are relatively moved to move the mating stage and the mask stage to cause the aforementioned An exposure device for aligning a substrate with a reticle for performing exposure; wherein the exposure device includes an optical distance correction means for allowing an optical distance between the light receiving surface of the photographic means and the substrate, and a light receiving surface of the photographic means The optical distance from the reticle is approximately the same.
藉由這種構成，以該載台將其上所載置塗有感光性樹脂之基板保持住，並以該光罩載台迫近面對上述基板並保持住光罩，而以該光學距離修正手段，使攝影手段受光面與基板間之光學距離、以及攝影手段受光面與光罩間之光學距離，約略一致，再以攝影手段將基板側與光罩側對準標記，捕捉到同一視野內加以拍攝，並以前述拍攝到之基板側及光罩側對準標記之各影像為基礎，相對移動前述載台與光罩載台，以使前述基板與光罩對位，然後進行曝光。藉由此方法，則即使於攝影手段之光軸方向上，基板與光罩之配置相互偏移，也能將在基板上所形成之基板側對準標記、和在光罩上所形成之光罩側對準標記之影像，同時成像於攝影手段之受光面。因此，就能同時並且即時(real time)進行所拍攝到之基板側對準標記與光罩側對準標記之影像處理，於是就能縮短基板及光罩之對位處理時間。又，因為不是如習知技術於光軸方向移動攝影手段，以分別拍攝基板側及光罩側對準標記，所以不會有因攝影手段之移動而產生位置偏移之情形。因此，就能提高對位精確度。With such a configuration, the substrate on which the photosensitive resin is placed is held by the stage, and the optical mask is pressed to face the substrate and the photomask is held, and the optical distance is corrected. The method is such that the optical distance between the light-receiving surface and the substrate of the photographing means and the optical distance between the light-receiving surface of the photographing means and the mask are approximately the same, and the substrate side and the mask side are aligned by the photographing means to capture the same field of view. The image is captured, and the substrate and the mask stage are relatively moved based on the respective images of the substrate side and the mask side alignment mark, and the substrate and the mask are aligned, and then exposed. According to this method, even if the arrangement of the substrate and the photomask are shifted from each other in the optical axis direction of the photographing means, the substrate side alignment mark formed on the substrate and the light formed on the photomask can be formed. The mask side is aligned with the image of the mark while being imaged on the light receiving surface of the photographing means. Therefore, the image processing of the captured substrate-side alignment mark and the mask-side alignment mark can be performed simultaneously and in real time, so that the alignment processing time of the substrate and the photomask can be shortened. Further, since the imaging means is not moved in the optical axis direction as in the prior art, the substrate side and the mask side alignment marks are respectively captured, so that there is no possibility that the positional shift occurs due to the movement of the imaging means. Therefore, the alignment accuracy can be improved.
再者，前述光學距離修正手段為一透明構件，至少係裝設在前述攝影手段之受光面與基板所連結成之光通路上，且具有一特定折射率。藉此，就可用具有特定折射率之透明構件，使攝影手段受光面與基板間之光學距離、及攝影手段受光面與光罩間之光學距離，約略一致。因此，藉由具有特定折射率之透明構件，能將相對於光罩側對準標記之成像位置而言，成像於前面之基板側對準標記之成像位置，挪到較後方，而可用簡單之構成來進行光學距離之修正。Further, the optical distance correcting means is a transparent member, and is provided at least on a light path connecting the light receiving surface of the photographing means and the substrate, and has a specific refractive index. Thereby, the transparent member having a specific refractive index can be used, and the optical distance between the light-receiving surface of the photographing means and the substrate and the optical distance between the light-receiving surface of the photographing means and the mask can be approximately matched. Therefore, by the transparent member having a specific refractive index, the imaging position of the substrate-side alignment mark on the front side can be moved to the rear with respect to the imaging position of the reticle-side alignment mark, and can be easily used. The composition is used to correct the optical distance.
更進一步，前述載台在曝光動作中會朝特定方向移動，並搬送其上面所載置之基板。藉此，利用朝特定方向移動之載台，在曝光動作中，將其上面所載置之基板加以搬送。因此，就能縮小光罩之尺寸，也就能降低光罩之成本。Further, the stage moves in a specific direction during the exposure operation, and conveys the substrate placed thereon. Thereby, the substrate placed on the upper surface is transported by the stage moving in a specific direction during the exposure operation. Therefore, the size of the mask can be reduced, and the cost of the mask can be reduced.
而，前述攝影手段包含了排列成一直線狀之可接收光線之多數受光元件。藉此，以包含排列成一直線狀之多數受光元件，拍攝基板側及光罩側對準標記。因此，若將偵測出基板側對準標記之受光元件之單元編號(cell number)、與偵測出光罩側對準標記之受光元件之單元編號互相比較，就能輕易偵測出基板側對準標記和光罩側對準標記之水平距離；若相對移動載台與光罩載台，使該距離成為一特定值，就能進行基板與光罩之對位。Further, the above-mentioned photographing means includes a plurality of light-receiving elements which are arranged in a line shape and which can receive light. Thereby, the substrate side and the mask side alignment mark are imaged by including a plurality of light receiving elements arranged in a line shape. Therefore, if the cell number of the light receiving element that detects the substrate side alignment mark is compared with the cell number of the light receiving element that detects the mask side alignment mark, the substrate side pair can be easily detected. The horizontal distance between the alignment mark and the reticle side alignment mark; if the distance between the stage and the reticle stage is relatively moved, the substrate and the reticle can be aligned.
以下，以附圖詳細說明本發明之實施形態。圖1為表示本發明曝光裝置之實施形態之概略構成之前視圖。此曝光裝置係分別拍攝在基板所形成之基板側對準標記、和在光罩所形成之光罩側對準標記，並以這些影像為基礎，進行基板與光罩之對位，然後曝光，且其係由載台1、光罩載台2、攝影手段3、光學距離修正手段4、和曝光光學部分5所構成。而以下說明係針對基板為彩色濾光片基板之情形加以敘述。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a front view showing a schematic configuration of an embodiment of an exposure apparatus of the present invention. The exposure device respectively captures the substrate side alignment mark formed on the substrate and the reticle side alignment mark formed on the reticle, and based on the images, performs alignment between the substrate and the reticle, and then exposes, Further, it is composed of a stage 1, a mask stage 2, a photographing means 3, an optical distance correcting means 4, and an exposure optical section 5. The following description is directed to the case where the substrate is a color filter substrate.
前述載台1係用於載置並保持一彩色濾光片基板6，該彩色濾光片基板6之上面1a係塗佈有作為感光性樹脂之彩色光阻劑；其藉由一搬送手段(圖示省略)而移動，如圖1所示，以一定速度將彩色濾光片基板6朝箭頭A方向搬送。The stage 1 is for mounting and holding a color filter substrate 6, and the upper surface 1a of the color filter substrate 6 is coated with a color photoresist as a photosensitive resin; Moving away as shown in FIG. 1, the color filter substrate 6 is conveyed in the direction of the arrow A at a constant speed.
在前述載台1之上方，係裝設有光罩載台2。相對於前述彩色濾光片基板6，此光罩載台2係隔著特定之間隙，例如100~300μm之間隙，使光罩7迫近面對前述彩色濾光片基板6並將光罩7加以保持。A mask holder 2 is attached to the upper side of the stage 1. With respect to the color filter substrate 6, the mask stage 2 is placed with a specific gap, for example, a gap of 100 to 300 μm, so that the mask 7 is brought close to the color filter substrate 6 and the mask 7 is placed. maintain.
於此，藉由照射曝光光線，前述光罩7可將其上所形成之光罩圖案轉印至彩色濾光片基板6上之彩色光阻劑，如圖2所示，其係由透明基材8、遮光膜9、光罩圖案10、觀察窗11、和光罩側對準標記17所構成。Here, by irradiating the exposure light, the photomask 7 can transfer the mask pattern formed thereon to the color photoresist on the color filter substrate 6, as shown in FIG. The material 8, the light shielding film 9, the mask pattern 10, the observation window 11, and the mask side alignment mark 17 are comprised.
前述透明基材8為可高效率透過紫外線及可見光之透明玻璃基材，例如可由石英玻璃構成。The transparent substrate 8 is a transparent glass substrate that can efficiently transmit ultraviolet rays and visible light, and can be made of, for example, quartz glass.
如圖3或圖4所示，在前述透明基材8之一面8a，係形成有遮光膜9。此遮光膜9用於遮蔽曝光光線，以不透明薄膜製成，例如以鉻(Cr)形成。As shown in FIG. 3 or FIG. 4, a light shielding film 9 is formed on one surface 8a of the transparent substrate 8. This light-shielding film 9 is used to shield the exposure light, and is made of an opaque film, for example, made of chromium (Cr).
在前述遮光膜9上，如圖2所示，有複數光罩圖案10朝同一方向排列而形成。而此複數光罩圖案10為可使曝光光線通過之具有特定形狀之開口；其能使曝光光線照射於對面之被搬送的彩色濾光片基板6上，而轉印在圖5所示之彩色濾光片基板6上所形成之黑色矩陣框(black matrix)12之像素13上。然後，使其包含與前述像素13寬度約略一致之寬度，並在與前述排列方向垂直之方向上，作成長矩形形狀，以與前述像素13之3間距(pitch)之間隔一致之間隔所形成。又，如圖2所示，將例如位於中央部之光罩圖案10a之左邊緣部，預先設定為基準位置S1。As shown in FIG. 2, the light-shielding film 9 is formed by arranging a plurality of mask patterns 10 in the same direction. The plurality of mask patterns 10 are openings having a specific shape through which the exposure light can pass; the exposure light can be irradiated onto the oppositely-transferred color filter substrate 6 and transferred to the color shown in FIG. A pixel 13 of a black matrix 12 formed on the filter substrate 6 is formed. Then, it is formed to have a width which is approximately the same as the width of the pixel 13, and is formed in a rectangular shape in a direction perpendicular to the arrangement direction, and is formed at an interval which is equal to the interval of the pitch of the pixels 13 by three. Moreover, as shown in FIG. 2, for example, the left edge part of the mask pattern 10a located in the center part is previously set as the reference position S1.
又如圖3所示，在透明基材8之另一面8b，在與前述光罩圖案10之形成區域相對應之區域14(參照圖2)，則有紫外線反射防止膜9形成，用以提高曝光光線所含紫外線之穿透效率。Further, as shown in Fig. 3, on the other surface 8b of the transparent substrate 8, in a region 14 (see Fig. 2) corresponding to the region where the mask pattern 10 is formed, an ultraviolet reflection preventing film 9 is formed for improvement. The penetration efficiency of the ultraviolet light contained in the exposure light.
在前述遮光膜9，如圖2所示，在迫近前述光罩圖案10並與其並排方向之一側，有觀察窗11形成。此觀察窗11為用於觀察對面之搬送而來之圖5所示之彩色濾光片基板6上所形成之基板側對準標記16及黑色矩陣框12之像素13，其能以後述之攝影手段3偵測出，在前述基板側對準標記16之位置、及預先設定在黑色矩陣框12之例如圖5所示之位於中央部之像素13a之左上角部位置的基準位置S2。然後再如圖2所示，與前述複數光罩圖案10之排列方向平行，自中央部分朝一方之端部8c延展而形成矩形狀。As shown in FIG. 2, the light-shielding film 9 is formed by the observation window 11 on the side of the mask pattern 10 which is adjacent to the mask pattern 10. The observation window 11 is a substrate-side alignment mark 16 and a black matrix frame 12 formed on the color filter substrate 6 shown in FIG. 5 for observing the opposite surface, and can be photographed later. The means 3 detects the position of the substrate-side alignment mark 16 and the reference position S2 which is previously set in the position of the upper left corner of the pixel 13a of the central portion shown in FIG. 5 in the black matrix frame 12. Then, as shown in FIG. 2, in parallel with the arrangement direction of the plurality of mask patterns 10, the central portion extends toward the one end portion 8c to form a rectangular shape.
在前述遮光膜9，如圖2所示，在前述觀察窗11之一端側，自中央部分朝另一方之端部8d，排列形成複數光罩側對準標記17。此複數光罩側對準標記17係，將預先設定在前述光罩圖案10之基準位置S1、與預先設定在前述彩色濾光片基板6之像素13之基準位置S2予以對位所需，為對應前述光罩圖案10而形成。並且，其形成位置則作成使圖2中光罩側對準標記17之左邊緣部與相對應之光罩圖案10之左邊緣部一致。然後，將例如在遮光膜9之中央部分所形成之光罩側對準標記17，預先設定為基準標記17a。藉此，依位置之調整，使前述基準標記17a與前述彩色濾光片基板6之基板側對準標記16成為特定之位置關係，就能將前述光罩圖案10之基準位置S1與彩色濾光片基板6之基準位置S2加以對位。As shown in FIG. 2, in the light shielding film 9, as shown in FIG. 2, a plurality of mask side alignment marks 17 are arranged on one end side of the observation window 11 from the center portion toward the other end portion 8d. The plurality of mask side alignment marks 17 are required to be aligned in advance with respect to the reference position S1 of the mask pattern 10 and the reference position S2 set in advance on the pixel 13 of the color filter substrate 6. It is formed corresponding to the mask pattern 10 described above. Further, the formation position is such that the left edge portion of the mask side alignment mark 17 in Fig. 2 coincides with the left edge portion of the corresponding mask pattern 10. Then, the mask side alignment mark 17 formed, for example, at the central portion of the light shielding film 9 is set in advance as the reference mark 17a. Thereby, the reference mark 17a and the substrate-side alignment mark 16 of the color filter substrate 6 are in a specific positional relationship, and the reference position S1 and the color filter of the mask pattern 10 can be filtered. The reference position S2 of the sheet substrate 6 is aligned.
又，如圖4所示，在透明基材8之另一面8b，在與前述觀察窗11及光罩側對準標記17之形成區域相對應之區域19(參照圖2)，有可穿透可見光並將紫外線予以反射之波長選擇性膜20形成；曝光光線所含之紫外線成分就透過前述觀察窗11及光罩側對準標記17，照射在彩色濾光片基板6，而可防止將塗佈於彩色濾光片基板6之彩色光阻劑曝光之情形發生。Further, as shown in Fig. 4, in the other surface 8b of the transparent substrate 8, a region 19 (see Fig. 2) corresponding to the formation region of the observation window 11 and the mask side alignment mark 17 is permeable. The wavelength selective film 20 which reflects visible light and reflects ultraviolet rays; the ultraviolet light component contained in the exposure light passes through the observation window 11 and the mask side alignment mark 17 and is irradiated onto the color filter substrate 6, thereby preventing the coating. The exposure of the color photoresist coated on the color filter substrate 6 occurs.
而，前述光罩7係如圖1所示，將形成有前述遮光膜9之一面朝下，並為光罩載台2所保持。As shown in FIG. 1, the photomask 7 is formed such that one of the light-shielding films 9 is formed to face downward and is held by the photomask stage 2.
在前述載台1之上方，裝設有攝影手段3。此攝影手段3為將在彩色濾光片基板6所形成之基板側對準標記16、和在光罩7上所形成之光罩側對準標記17，透過一半透半反鏡(half mirror)21分別捕捉到同一視野內加以拍攝，其包含：具有將接收光線之複數受光元件排列成一直線狀而作為受光面之線型CCD(charge coupled device；電荷耦合裝置)22；裝設於該線型CCD 22前方，且可使在彩色濾光片基板6所形成之基板側對準標記16、及在像素13或光罩7上所形成之光罩側對準標記17，各自成像於前述CCD 22上之聚光鏡23。Above the stage 1, a photographing means 3 is mounted. This photographing means 3 is a substrate side alignment mark 16 formed on the color filter substrate 6, and a mask side alignment mark 17 formed on the mask 7, and is transmitted through a half mirror. 21 capturing the same field of view and capturing the image, comprising: a line-type CCD (charge coupled device) 22 having a plurality of light receiving elements for receiving light in a line shape as a light receiving surface; and being mounted on the line type CCD 22 In front, the substrate side alignment mark 16 formed on the color filter substrate 6 and the mask side alignment mark 17 formed on the pixel 13 or the mask 7 are respectively formed on the CCD 22 Condenser 23.
如圖1所示，在前述攝影手段3之光通路上，在前述線型CCD 22與聚光鏡23之間，裝設有光學距離修正手段4。此光學距離修正手段4之作用為使攝影手段3之線型CCD 22與彩色濾光片基板6間之光學距離、及攝影手段3之線型CCD 22與光罩7間之光學距離，約略一致；其係由具有比空氣折射率大之特定折射率之透明構件所構成，例如玻璃板即是。As shown in FIG. 1, an optical distance correction means 4 is provided between the linear CCD 22 and the condensing mirror 23 in the light path of the imaging means 3. The optical distance correcting means 4 functions to approximate the optical distance between the linear CCD 22 of the photographing means 3 and the color filter substrate 6, and the optical distance between the linear CCD 22 of the photographing means 3 and the reticle 7; It consists of a transparent member having a specific refractive index greater than the refractive index of air, such as a glass plate.
在此情形下，由具有特定折射率之透明構件所構成之光學距離修正手段4就如圖6所示，裝設在隔著光罩7上所形成之觀察窗11而連結攝影手段3之線型CCD 22與彩色濾光片基板6之光通路上。或者，在前述線型CCD 22前方，裝設具有將其全面覆蓋之尺寸之光學距離修正手段4，而位於連結前述線型CCD 22與彩色濾光片基板6之光通路上之部分之厚度比其他部分厚，亦無不可。In this case, the optical distance correcting means 4 composed of a transparent member having a specific refractive index is attached to the line type of the photographing means 3 which is attached to the observation window 11 formed on the mask 7 as shown in FIG. The light path of the CCD 22 and the color filter substrate 6 is used. Alternatively, in front of the linear CCD 22, an optical distance correcting means 4 having a size covering the entire surface thereof is provided, and a portion of the portion connecting the optical path of the linear CCD 22 and the color filter substrate 6 is thicker than other portions. Thick, nothing.
如圖6所示，通常從自聚光鏡23起算距離相異之P1、P2二點所發出之光線，會聚光在自聚光鏡23起算距離相異之F1、F2二點。因此，在藉由攝影手段3拍攝光罩7之光罩側對準標記17之狀態(聚光點F2於線型CCD 22上呈現一致之狀態)下，相較於光罩7，自攝影手段3之聚光鏡23起之距離較遠之彩色濾光片基板6所發出之光線L1，就會聚光在線型CCD 22前面之點F1。因此，就不能使光罩7之光罩側對準標記17、與彩色濾光片基板6之基板側對準標記16，同時成像於攝影手段3之線型CCD 22上。但是，如圖6所示，若將光學距離修正手段4，裝設在隔著前述光罩7之觀察窗11而連結攝影手段3之線型CCD 22與彩色濾光片基板6之光通路上時，光學距離就變長，也就能將光線L1聚光在前述線型CCD 22上之點F3。藉由此方法，就能使光罩側對準標記17、與基板側對準標記16，同時成像於線型CCD 22上。此外，前述光學距離之調整可藉由調節光學距離修正手段4之構件之折射率及/或厚度加以進行。As shown in FIG. 6, the light rays emitted from the two points P1 and P2, which are different in distance from the condensing mirror 23, are collected at two points F1 and F2 which are different in distance from the condensing mirror 23. Therefore, in the state in which the reticle side alignment mark 17 of the reticle 7 is photographed by the photographing means 3 (the condensed spot F2 is in a state of being uniform on the line CCD 22), the self photographic means 3 is compared with the reticle 7 The light beam L1 emitted from the color filter substrate 6 which is distant from the condensing mirror 23 condenses the point F1 in front of the line type CCD 22. Therefore, the mask side alignment mark 17 of the mask 7 and the substrate side alignment mark 16 of the color filter substrate 6 cannot be aligned and imaged on the line type CCD 22 of the photographing means 3. However, as shown in FIG. 6, when the optical distance correction means 4 is attached to the optical path of the linear CCD 22 and the color filter substrate 6 of the imaging means 3 via the observation window 11 of the mask 7, The optical distance becomes longer, and the light L1 can be concentrated on the point F3 on the linear CCD 22. By this means, the mask side alignment mark 17 and the substrate side alignment mark 16 can be aligned while being imaged on the line type CCD 22. Further, the adjustment of the optical distance can be performed by adjusting the refractive index and/or thickness of the member of the optical distance correction means 4.
如此構成之光罩載台2及攝影手段3，藉由圖示省略之對準機構，就能在與圖1所示之載台1之上面1a平行之面內，使其全體朝與箭頭A所示之搬送方向垂直之方向移動。The mask holder 2 and the photographing means 3 configured as described above can be aligned with the arrow A in the plane parallel to the upper surface 1a of the stage 1 shown in Fig. 1 by the alignment mechanism (not shown). The transport direction shown moves in the direction perpendicular to the direction.
在前述載台1之上方，裝設有曝光光學部分5。此曝光光學部分5將曝光光線透過光罩7照射至彩色濾光片基板6上，使得光罩7之光罩圖案10之影像，轉印至塗佈於彩色濾光片基板6之彩色光阻劑上，並且其具有光源24和聚光鏡25。Above the stage 1, an exposure optical portion 5 is mounted. The exposure optical portion 5 irradiates the exposure light through the reticle 7 onto the color filter substrate 6, so that the image of the reticle pattern 10 of the reticle 7 is transferred to the color photoresist coated on the color filter substrate 6. On the agent, and it has a light source 24 and a condensing mirror 25.
前述光源24為可散發出含有紫外線之曝光光線之光源，例如超高壓水銀燈、氙燈或紫外線發光雷射。然後再藉由凹面鏡26聚光至其焦點。又，前述聚光鏡25裝設於光源24與光罩載台2之間，可將光源24所散發之曝光光線調為平行光並使其垂直照射於光罩7，而使其前焦點定位在靠近前述凹面鏡26之焦點旁。The light source 24 is a light source that emits exposure light containing ultraviolet rays, such as an ultrahigh pressure mercury lamp, a xenon lamp, or an ultraviolet light emitting laser. It is then concentrated by the concave mirror 26 to its focus. Moreover, the condensing mirror 25 is disposed between the light source 24 and the reticle stage 2, and can adjust the exposure light emitted by the light source 24 to be parallel light and vertically illuminate the reticle 7, so that the front focus is positioned close to Next to the focus of the aforementioned concave mirror 26.
其次，對於這種構成之曝光裝置之動作加以說明。Next, the operation of the exposure apparatus having such a configuration will be described.
這裡所使用之彩色濾光片基板6，如圖5所示，其為鉻(Cr)等所組成之不透明膜在透明玻璃基板之一面形成，再如同圖所示，其為在曝光區域26內有複數像素13呈矩陣狀形成而成。並且，在曝光區域26之一端部26a之靠中央部，形成有一個細長狀基板側對準標記16，用於將預先設定在前述光罩7之基準位置S1、與預先設定在前述彩色濾光片基板6之基準位置S2間之位置偏移，加以修正而予以對準。又，在前述基板側對準標記16之一側，有自中央側朝向一方之端部6a排列之複數對準確認標記27，以與像素13相對應並與像素13所排列之3個間距(pitch)之間隔一致之間隔形成。並且，前述基板側對準標記16及對準確認標記27，係以在圖5中各標記之左邊緣部和所對應之像素13之左邊緣部彼此皆為一致之方式形成。As shown in FIG. 5, the color filter substrate 6 used here is an opaque film composed of chromium (Cr) or the like formed on one side of a transparent glass substrate, and as shown in the figure, it is in the exposed region 26. The plurality of pixels 13 are formed in a matrix. Further, at the center portion of one end portion 26a of the exposure region 26, an elongated substrate-side alignment mark 16 is formed for setting the reference position S1 of the mask 7 in advance and setting the color filter in advance. The position between the reference positions S2 of the sheet substrate 6 is shifted, corrected, and aligned. Further, on one side of the substrate-side alignment mark 16, there are a plurality of alignment confirmation marks 27 arranged from the center side toward one end portion 6a so as to correspond to the pixels 13 and to be arranged at three intervals from the pixels 13 ( The intervals of the pitch are formed at equal intervals. Further, the substrate-side alignment mark 16 and the alignment confirmation mark 27 are formed such that the left edge portion of each mark and the left edge portion of the corresponding pixel 13 coincide with each other in FIG.
像這樣形成之彩色濾光片基板6，上面塗佈特定之彩色光阻劑，使形成有曝光區域26之前述基板側對準標記16之端部26a之一側，位在圖5箭頭A所示之搬送方向之起頭處，再裝載在載台1之上面1a，再藉由圖示省略之搬送手段，以一定之速度朝箭頭A方向搬送。The color filter substrate 6 thus formed is coated with a specific color resist thereon so that one side of the end portion 26a of the substrate-side alignment mark 16 on which the exposed region 26 is formed is located at the arrow A of FIG. At the beginning of the conveyance direction, it is placed on the upper surface 1a of the stage 1, and conveyed at a constant speed in the direction of the arrow A by the conveyance means omitted.
另一方面，如圖2所示，光罩7可使有觀察窗11形成之端部8e之一側，位在箭頭A所示之搬送方向之前面，並如圖1所示，其將形成遮光膜9之面置於下方而為載台2所保持。然後，光罩7就會迫近面對搬送而來之彩色濾光片基板6之上面。On the other hand, as shown in Fig. 2, the mask 7 can be placed on the side of the end portion 8e where the observation window 11 is formed, in front of the conveying direction indicated by the arrow A, and as shown in Fig. 1, it will be formed. The surface of the light-shielding film 9 is placed below and held by the stage 2. Then, the photomask 7 is brought close to the upper surface of the color filter substrate 6 that has been transported.
在這種狀態下，通過在光罩7所形成之觀察窗11，彩色濾光片基板6上之基板側對準標記16、對準確認標記27以及像素13，就可由攝影手段3加以攝影。在此情形下，在隔著在光罩7所形成之觀察窗11而將攝影手段3之線型CCD 22與彩色濾光片基板6連結之光通路上，裝設有光學距離修正手段4，而由於其光學距離與攝影手段3之線型CCD 22與光罩7間之光學距離，約略一致，所以在攝影手段3之光軸方向偏移位置之彩色濾光片基板6之基板側對準標記16等之影像、和光罩7之光罩側對準標記17之影像，就會同時成像於攝影手段3之線型CCD 22上。因此，由攝影手段3同時拍攝之基板側對準標記16等之影像、與光罩側對準標記17之影像，就可以圖示省略之影像處理部，加以處理。In this state, the substrate side alignment mark 16, the alignment confirmation mark 27, and the pixel 13 on the color filter substrate 6 are photographed by the photographing means 3 through the observation window 11 formed by the mask 7. In this case, the optical distance correction means 4 is mounted on the optical path connecting the linear CCD 22 of the photographing means 3 and the color filter substrate 6 via the observation window 11 formed by the mask 7. Since the optical distance between the linear CCD 22 and the reticle 7 of the photographing means 3 is approximately the same, the substrate side alignment mark 16 of the color filter substrate 6 at the position shifted by the optical axis direction of the photographing means 3 The image of the image, and the image of the mask side alignment mark 17 of the mask 7 are simultaneously imaged on the line type CCD 22 of the photographing means 3. Therefore, the image of the substrate-side alignment mark 16 or the like and the image of the mask-side alignment mark 17 which are simultaneously captured by the photographing means 3 can be processed by the image processing unit which is omitted.
在此情形下，如圖7所示，首先藉由攝影手段3，將通過光罩7之觀察窗11觀察所得之彩色濾光片基板6上之基板側對準標記16、與光罩7之光罩側對準標記17，同時加以拍攝。此時，偵測出基板側對準標記16之線型CCD 22之受光元件之單元編號、和偵測出前述光罩7之基準標記17a之線型CCD 22之受光元件之單元編號，就可被讀取到，再以圖示省略之演算部演算出水平距離L。然後，再與預先設定並記憶之特定距離L0 比較。In this case, as shown in FIG. 7, first, the substrate side alignment mark 16 on the color filter substrate 6 and the photomask 7 are observed through the observation window 11 of the mask 7 by the photographing means 3. The mask side is aligned with the mark 17 while being photographed. At this time, the unit number of the light-receiving element of the linear CCD 22 of the substrate-side alignment mark 16 and the unit number of the light-receiving element of the linear CCD 22 which detects the reference mark 17a of the mask 7 can be read. The horizontal distance L is calculated by the calculation unit omitted from the figure. Then, it is compared with a specific distance L 0 which is set and memorized in advance.
在這裡，如圖7所示，在光罩7相對於彩色濾光片基板6，朝箭頭B方向偏移之情形時，如圖8所示，光罩7朝箭頭C方向移動，以使基板側對準標記16、與基準標記17a之距離L，等於L0 或L0 ±x(x為容許值(tolerance；或稱公差))。藉此，光罩7之基準位置S1、與彩色濾光片基板6之基準位置S2，就會在所訂定之容許範圍內保持一致。Here, as shown in FIG. 7, when the reticle 7 is displaced in the direction of the arrow B with respect to the color filter substrate 6, as shown in FIG. 8, the reticle 7 is moved in the direction of the arrow C to make the substrate. The side alignment mark 16, the distance L from the reference mark 17a, is equal to L 0 or L 0 ±x (x is a tolerance (or tolerance). Thereby, the reference position S1 of the photomask 7 and the reference position S2 of the color filter substrate 6 are kept within the predetermined allowable range.
其次，如圖8所示，彩色濾光片基板6之對準確認標記27，藉由攝影手段3，通過光罩7之觀察窗11予以拍攝。然後，偵測出各對準確認標記27之線型CCD 22之受光元件之單元編號、以及偵測出光罩7之各光罩側對準標記17之線型CCD 22之受光元件之單元編號、就可被讀取到，再以演算部將各單元編號之平均值演算出來。此平均值在對準調整後，隨即與偵測出前述彩色濾光片基板6之基板側對準標記16之線型CCD 22之受光元件之單元編號互相比較，若兩者在所訂定之容許範圍內為一致之情形時，就判斷為對準確實實行，然後曝光光線就會照射到光罩7。藉此，光罩7之光罩圖案10之像，就會轉印到彩色濾光片基板6之像素13上。而，若前述平均值與單元編號為不一致之情形時，例如彩色濾光片基板6為別種基板，或者判斷為黑色矩陣框12之形成不良品時，對於這種情形就停止曝光並發出警報。Next, as shown in FIG. 8, the alignment check mark 27 of the color filter substrate 6 is imaged by the photographing means 3 through the observation window 11 of the mask 7. Then, the unit number of the light receiving element of the linear CCD 22 of each alignment confirmation mark 27 and the unit number of the light receiving element of the linear CCD 22 of each mask side alignment mark 17 of the mask 7 are detected. After being read, the calculation unit calculates the average value of each unit number. After the alignment is adjusted, the unit numbers of the light-receiving elements of the linear CCD 22 that detect the substrate-side alignment mark 16 of the color filter substrate 6 are compared with each other, if the two are within the allowable range. When the inside is the same, it is judged that the alignment is actually performed, and then the exposure light is irradiated to the reticle 7. Thereby, the image of the mask pattern 10 of the photomask 7 is transferred onto the pixels 13 of the color filter substrate 6. On the other hand, when the average value and the cell number do not match each other, for example, when the color filter substrate 6 is a different type of substrate, or when it is determined that the black matrix frame 12 is defective, the exposure is stopped and an alarm is issued.
然後，將攝影手段3所拍攝之影像資料與記憶部所記憶之彩色濾光片基板6之基準位置S2之查找表(Look Up Table；LUT)互相比較後，偵測出基準位置S2。然後如圖9所示，將偵測出前述基準位置S2之線型CCD 22之受光元件之單元編號，與偵測出光罩7之基準標記17a之線型CCD 22之受光元件之單元編號互相比較，使光罩7朝箭頭B、C方向微動，俾使得兩者之距離L等於L0 或L0 ±x。又，視情況需要，光罩7會以其面之中心為中心軸作轉動調整。藉此，即使彩色濾光片基板6在朝與箭頭A所示之方向垂直之方向，邊轉向邊搬送時，光罩7亦可對其追蹤動作，就可在目標位置上將光罩7之光罩圖案10之影像精確轉印上去。Then, the image data captured by the photographing means 3 and the lookup table (LUT) of the reference position S2 of the color filter substrate 6 stored in the memory unit are compared with each other, and the reference position S2 is detected. Then, as shown in FIG. 9, the unit number of the light receiving element of the linear CCD 22 that detects the reference position S2 is compared with the unit number of the light receiving element of the linear CCD 22 that detects the reference mark 17a of the mask 7, so that The mask 7 is slightly moved in the directions of arrows B and C such that the distance L between the two is equal to L 0 or L 0 ±x. Further, the photomask 7 is rotationally adjusted with the center of the face as a central axis as occasion demands. Thereby, even if the color filter substrate 6 is conveyed while being turned in a direction perpendicular to the direction indicated by the arrow A, the photomask 7 can be tracked, and the photomask 7 can be placed at the target position. The image of the reticle pattern 10 is accurately transferred.
在此情形下，如圖3所示，在光罩7之透明基材8之另一面8b，因為在與光罩圖案10之形成區域相對應之區域14(參照圖2)，有曝光光線所含紫外線成分之反射防止膜15形成，而紫外線因該反射防止膜15之故，反射得以受到抑制，所以就可很有效率地穿透光罩7之光罩圖案10。然後，就可以很有效率地將彩色濾光片基板6上之彩色光阻劑加以曝光。In this case, as shown in FIG. 3, on the other side 8b of the transparent substrate 8 of the reticle 7, there is an exposure light in the region 14 (refer to FIG. 2) corresponding to the region where the reticle pattern 10 is formed. The anti-reflection film 15 containing the ultraviolet ray component is formed, and the ultraviolet ray is suppressed by the reflection preventing film 15, so that the reticle pattern 10 of the reticle 7 can be efficiently penetrated. Then, the color photoresist on the color filter substrate 6 can be efficiently exposed.
另一方面，如圖4所示，在光罩7之透明基材8之另一面8b，因為在與觀察窗11及光罩側對準標記17之形成區域相對應之區域19(參照圖2)，有可穿透可見光並將紫外線予以反射之波長選擇性膜20形成之故，所以照射在前述觀察窗11及光罩側對準標記17之曝光光線之紫外線成分，就會由波長選擇性膜20予以反射。因此，曝光光線之紫外線成分就不會通過觀察窗11及光罩側對準標記17，照射到彩色濾光片基板6。On the other hand, as shown in FIG. 4, in the other surface 8b of the transparent substrate 8 of the reticle 7, the region 19 corresponding to the region where the observation window 11 and the reticle side alignment mark 17 are formed (refer to FIG. 2) The wavelength selective film 20 which can penetrate the visible light and reflect the ultraviolet light is formed. Therefore, the ultraviolet light component of the exposure light irradiated to the observation window 11 and the mask side alignment mark 17 is wavelength selective. The film 20 is reflected. Therefore, the ultraviolet ray component of the exposure light does not pass through the observation window 11 and the reticle side alignment mark 17, and is irradiated onto the color filter substrate 6.
因此，即使觀察窗11及光罩側對準標記17迫近光罩圖案10而先後於搬送方向形成，前述觀察窗11及光罩側對準標記17之影像也不會轉印至彩色濾光片基板6之曝光區域26。Therefore, even if the observation window 11 and the mask side alignment mark 17 are formed close to the mask pattern 10 in the transport direction, the images of the observation window 11 and the mask side alignment mark 17 are not transferred to the color filter. The exposed area 26 of the substrate 6.
另一方面，可見光因可穿透前述波長選擇性膜20，所以就能透過前述觀察窗11去觀察彩色濾光片基板6上之基板側對準標記16、對準確認標記27以及像素13。因此，就能在迫近光罩圖案10之位置，透過觀察窗11去確認彩色濾光片基板6上之基板側對準標記16以及像素13之位置，也能將光罩7之基準位置S1與彩色濾光片基板6之基準位置S2加以對位，並比習知技術更能提高兩者之對位精確度。On the other hand, since the visible light can penetrate the wavelength selective film 20, the substrate side alignment mark 16, the alignment confirmation mark 27, and the pixel 13 on the color filter substrate 6 can be observed through the observation window 11. Therefore, the position of the substrate-side alignment mark 16 and the pixel 13 on the color filter substrate 6 can be confirmed through the observation window 11 at a position close to the mask pattern 10, and the reference position S1 of the mask 7 can also be The reference position S2 of the color filter substrate 6 is aligned, and the alignment accuracy of the two is improved more than the prior art.
此外，在前述實施形態之中，雖對光罩側對準標記17排列於觀察窗11旁而形成之情形，有所說明，然而本發明並不侷限於此，若將觀察窗11自透明基材8之一邊之端部8c延伸拉長至另一邊之端部8d而形成，並在其內部形成光罩側對準標記17亦可。而這情形之光罩側對準標記17就以不透明膜形成例如細長之形狀。Further, in the above-described embodiment, the case where the mask side alignment marks 17 are arranged adjacent to the observation window 11 has been described. However, the present invention is not limited thereto, and the observation window 11 is self-transparent. The end portion 8c of one side of the material 8 is formed by extending to the end portion 8d of the other side, and the mask side alignment mark 17 may be formed inside. In this case, the mask side alignment mark 17 is formed in an elongate shape such as an elongated shape.
又，在前述實施形態之中，雖對在彩色濾光片基板6上有基板側對準標記16及對準確認標記27形成之情形，有所說明，然而本發明並不侷限於此，若將前述基板側對準標記16及對準確認標記27去除亦可。在此情形下，就在曝光區域26之搬送方向兩側之特定位置，形成另外之對準標記，亦在光罩7之兩邊部與其對應形成對準標記，並在搬送彩色濾光片基板6之前，藉由兩對準標記作對準粗調，而曝光進行中，就以攝影手段3透過觀察窗11偵測出基準位置S2，再藉由前述方法進行對位亦可。Further, in the above-described embodiment, the case where the substrate-side alignment mark 16 and the alignment confirmation mark 27 are formed on the color filter substrate 6 has been described. However, the present invention is not limited thereto. The substrate side alignment mark 16 and the alignment confirmation mark 27 may be removed. In this case, another alignment mark is formed at a specific position on both sides of the transfer direction of the exposure region 26, and an alignment mark is formed on both sides of the mask 7, and the color filter substrate 6 is transported. Previously, the two alignment marks were used to align the coarse adjustment, and when the exposure was in progress, the reference position S2 was detected by the photographing means 3 through the observation window 11, and the alignment was performed by the above method.
並且，在前述實施形態之中，雖對曝光光線照射到光罩圖案10、觀察窗11以及光罩側對準標記17之情形，有所敘述，然而本發明並不侷限於此，若將曝光光線縮小範圍使其不照射到觀察窗11以及光罩側對準標記17之情形亦可。若是這種情形時，可穿透可見光並將紫外線予以反射之波長選擇性膜20，即不必形成為覆蓋觀察窗11以及光罩側對準標記17。Further, in the above-described embodiment, the case where the exposure light is applied to the mask pattern 10, the observation window 11, and the mask side alignment mark 17 is described. However, the present invention is not limited thereto, and if the exposure is to be performed The light is narrowed so that it does not illuminate the observation window 11 and the reticle side alignment mark 17. In this case, the wavelength selective film 20 which can penetrate the visible light and reflect the ultraviolet rays, that is, does not have to be formed to cover the observation window 11 and the mask side alignment mark 17.
又，以上說明之中，雖對於將作為光學距離修正手段4之具有特定折射率之透明構件，裝設在隔著前述光罩7之觀察窗11而連結攝影手段3之線型CCD 22與彩色濾光片基板6之光通路上之情形，有所敘述，然而若將與攝影手段3之聚光鏡23不同種之聚光鏡，裝設在連結攝影手段3之線型CCD 22與光罩7之光罩側對準標記17之光通路上，而將聚光點F2挪到其前面，使該聚光點定位在自彩色濾光片基板6而來之L1之聚光點F1之位置亦可。Further, in the above description, the transparent member having the specific refractive index as the optical distance correcting means 4 is attached to the linear CCD 22 and the color filter that connect the photographing means 3 via the observation window 11 of the mask 7. The case of the optical path of the light-film substrate 6 is described. However, a condensing mirror of a different kind from the condensing mirror 23 of the imaging means 3 is attached to the reticle side of the linear CCD 22 and the reticle 7 that connect the imaging means 3. On the light path of the quasi-marker 17, the condensed spot F2 is moved to the front side, and the condensed spot is positioned at the position of the condensed spot F1 of L1 from the color filter substrate 6.
並且，以上說明之中，雖對載台1在曝光動作中朝預定方向移動，而搬送裝載其上面之彩色濾光片基板6之情形，有所敘述，然而本發明並不侷限於此，若載台1在曝光動作中停止，就將特定之曝光圖案一次曝光到彩色濾光片基板6之曝光區域26全面亦可。在此情形下，在曝光區域26周邊所形成之與前述不同之基板側對準標記，就透過在光罩形成之另外之觀察窗予以拍攝，並將光罩上與前述基板側對準標記相對應所形成之光罩側對準標記和前述基板側對準標記並列拍攝，再將載台與光罩相對移動使得兩對準標記成為所定之位置關係而加以對位亦可。In the above description, the case where the stage 1 is moved in the predetermined direction during the exposure operation and the color filter substrate 6 on the upper surface thereof is transported is described. However, the present invention is not limited thereto. When the stage 1 is stopped during the exposure operation, the specific exposure pattern is exposed to the exposure region 26 of the color filter substrate 6 at a time. In this case, the substrate-side alignment mark formed on the periphery of the exposed region 26 is imaged through another viewing window formed by the mask, and the mask is aligned with the substrate side. Correspondingly, the formed mask side alignment mark and the substrate side alignment mark are photographed in parallel, and the stage and the mask are moved relative to each other so that the alignment marks are aligned in a predetermined positional relationship.
而在以上說明之中，雖對基板為彩色濾光片基板6之情形，有所敘述，然而本發明並不侷限於此，只要是形成特定之曝光圖案之物件，不論半導體基板或其他物件亦可。In the above description, although the case where the substrate is the color filter substrate 6 is described, the present invention is not limited thereto, as long as it is an object for forming a specific exposure pattern, regardless of the semiconductor substrate or other objects. can.
1．．．載台1. . . Loading platform
1a．．．上面1a. . . Above
2．．．光罩載台2. . . Photomask stage
3．．．攝影手段3. . . Photography means
4．．．光學距離修正手段4. . . Optical distance correction
5．．．曝光光學部分5. . . Exposure optics
6．．．彩色濾光片基板6. . . Color filter substrate
6a、26a．．．端部6a, 26a. . . Ends
7．．．光罩7. . . Mask
8．．．透明基材8. . . Transparent substrate
8a、8b．．．面8a, 8b. . . surface
8c、8d、8e．．．端部8c, 8d, 8e. . . Ends
9．．．遮光膜9. . . Sunscreen
10、10a．．．光罩圖案10, 10a. . . Mask pattern
11．．．觀察窗11. . . Observation window
12．．．黑色矩陣框12. . . Black matrix frame
13、13a．．．像素13, 13a. . . Pixel
14、19．．．區域14,19. . . region
15．．．反射防止膜15. . . Anti-reflection film
16．．．基板側對準標記16. . . Substrate side alignment mark
17．．．光罩側對準標記17. . . Mask side alignment mark
17a．．．基準標記17a. . . Benchmark mark
20．．．波長選擇性膜20. . . Wavelength selective membrane
21．．．半透半反鏡twenty one. . . Semi-transparent mirror
22．．．CCDtwenty two. . . CCD
23、25．．．聚光鏡23, 25. . . Condenser
24．．．光源twenty four. . . light source
26．．．凹面鏡26. . . concave mirror
27．．．對準確認標記27. . . Alignment confirmation mark
S1、S2．．．基準位置S1, S2. . . Reference position
X－X、Y－Y．．．線X-X, Y-Y. . . line
A、B、C．．．箭頭A, B, C. . . arrow
L．．．距離L. . . distance
L1、L2．．．光線L1, L2. . . Light
F1、F2、F3．．．聚光點F1, F2, F3. . . Spotlight
P1、P2．．．點P1, P2. . . point
圖1為表示本發明曝光裝置之實施形態之概略構成之前視圖；圖2為表示在前述曝光裝置中所使用之光罩之一構成例之俯視圖；圖3為圖2之X－X線截面圖；圖4為圖2之Y－Y線截面圖；圖5為表示在前述曝光裝置中所使用之彩色濾光片之一構成例之俯視圖；圖6為表示在前述曝光裝置中所使用之光學距離修正手段之原理之說明圖；圖7為說明前述光罩與彩色濾光片基板之對位所用之圖，且係表示調整前狀態之說明圖；圖8為說明前述光罩與彩色濾光片基板之對位所用之圖，且係表示調整後狀態之說明圖；以及圖9為說明前述光罩與彩色濾光片基板之對位所用之圖，且係表示曝光執行中之微調整之說明圖。1 is a front view showing a schematic configuration of an embodiment of an exposure apparatus according to the present invention; FIG. 2 is a plan view showing a configuration example of a photomask used in the exposure apparatus; and FIG. 3 is a cross-sectional view taken along line X-X of FIG. Figure 4 is a cross-sectional view taken along line Y-Y of Figure 2; Figure 5 is a plan view showing a configuration example of a color filter used in the exposure apparatus; Figure 6 is a view showing an optical used in the exposure apparatus. FIG. 7 is a view for explaining alignment between the photomask and the color filter substrate, and is an explanatory view showing a state before adjustment; FIG. 8 is a view illustrating the mask and color filter. The figure used for the alignment of the substrate is an explanatory view showing the adjusted state; and FIG. 9 is a view for explaining the alignment of the photomask and the color filter substrate, and shows the fine adjustment in the execution of the exposure. Illustrating.
1．．．載台1. . . Loading platform
1a．．．上面1a. . . Above
2．．．光罩載台2. . . Photomask stage
3．．．攝影手段3. . . Photography means
4．．．光學距離修正手段4. . . Optical distance correction
5．．．曝光光學部分5. . . Exposure optics
6．．．彩色濾光片基板6. . . Color filter substrate
7．．．光罩7. . . Mask
8．．．透明基材8. . . Transparent substrate
9．．．遮光膜9. . . Sunscreen
10．．．光罩圖案10. . . Mask pattern
11．．．觀察窗11. . . Observation window
21．．．半透半反鏡twenty one. . . Semi-transparent mirror
22．．．CCDtwenty two. . . CCD
23、25．．．聚光鏡23, 25. . . Condenser
24．．．光源twenty four. . . light source
26．．．凹面鏡26. . . concave mirror
A．．．箭頭A. . . arrow
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| JP2005295056A JP4754924B2 (en) | 2005-10-07 | 2005-10-07 | Exposure equipment |
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| JP5076233B2 (en) * | 2007-05-16 | 2012-11-21 | 株式会社ブイ・テクノロジー | Method for adjusting initial position and orientation of exposure mask |
| JP2009210598A (en) * | 2008-02-29 | 2009-09-17 | Nsk Ltd | Glass substrate, and proximity scan exposure apparatus, and proximity scan exposure method |
| JP2009251290A (en) * | 2008-04-07 | 2009-10-29 | V Technology Co Ltd | Exposure apparatus |
| JP5261665B2 (en) * | 2008-05-27 | 2013-08-14 | 株式会社ブイ・テクノロジー | Proximity exposure equipment |
| WO2009145032A1 (en) | 2008-05-28 | 2009-12-03 | 凸版印刷株式会社 | Method for producing color filter, method for producing substrate with pattern, and small photomask |
| JP5499398B2 (en) * | 2009-05-11 | 2014-05-21 | Ｎｓｋテクノロジー株式会社 | Exposure apparatus and exposure method |
| JP5471046B2 (en) * | 2009-06-03 | 2014-04-16 | 株式会社ブイ・テクノロジー | Laser annealing method and laser annealing apparatus |
| JP2011003605A (en) * | 2009-06-16 | 2011-01-06 | Hitachi High-Technologies Corp | Proximity aligner, alignment method for proximity aligner, and manufacturing method for display panel board |
| JP5633021B2 (en) * | 2009-06-29 | 2014-12-03 | 株式会社ブイ・テクノロジー | Alignment method, alignment apparatus, and exposure apparatus |
| JP5351287B2 (en) * | 2010-01-21 | 2013-11-27 | シャープ株式会社 | Substrate, exposure method for substrate, photo-alignment processing method |
| JPWO2011105461A1 (en) * | 2010-02-24 | 2013-06-20 | Ｎｓｋテクノロジー株式会社 | Light irradiation apparatus for exposure apparatus, exposure apparatus, exposure method, substrate manufacturing method, mask, and substrate to be exposed |
| JP5382456B2 (en) * | 2010-04-08 | 2014-01-08 | 株式会社ブイ・テクノロジー | Exposure method and exposure apparatus |
| JP5344766B2 (en) * | 2010-06-17 | 2013-11-20 | 株式会社ブイ・テクノロジー | Photomask, laser annealing apparatus using the same, and exposure apparatus |
| JP5843191B2 (en) * | 2011-08-03 | 2016-01-13 | 株式会社ブイ・テクノロジー | Photo mask |
| CN103858208B (en) * | 2011-08-10 | 2016-08-24 | 株式会社V技术 | The alignment device of exposure device and alignment mark |
| JP5874900B2 (en) * | 2011-09-09 | 2016-03-02 | 株式会社ブイ・テクノロジー | Alignment device for exposure equipment |
| JP6002898B2 (en) * | 2011-08-10 | 2016-10-05 | 株式会社ブイ・テクノロジー | Alignment device for exposure equipment |
| KR101552923B1 (en) * | 2012-10-12 | 2015-09-14 | 주식회사 옵티레이 | Exposure apparatus |
| WO2016013978A1 (en) * | 2014-07-23 | 2016-01-28 | Heptagon Micro Optics Pte. Ltd. | Light emitter and light detector modules including vertical alignment features |
| CN105159037B (en) * | 2015-09-30 | 2017-06-30 | 合肥芯碁微电子装备有限公司 | A kind of angle calibration method of direct-write type lithography machine pattern generator |
| CN107145043A (en) * | 2017-07-11 | 2017-09-08 | 上海镭慎光电科技有限公司 | The exposure device and exposure method of silicon chip alignment mark |
| CN109324486A (en) * | 2018-11-07 | 2019-02-12 | 惠科股份有限公司 | Method and device for correcting exposure offset of yellow light process |
| JP7266864B2 (en) * | 2019-07-19 | 2023-05-01 | 株式会社ブイ・テクノロジー | Exposure device and exposure method |
| CN113132621B (en) * | 2020-01-10 | 2022-04-26 | 长鑫存储技术有限公司 | System and method for correcting position of shooting device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5211774A (en) * | 1975-07-17 | 1977-01-28 | Canon Inc | Method of detecting relative position of patterns |
| JP2775519B2 (en) * | 1990-08-21 | 1998-07-16 | 住友重機械工業株式会社 | Dual focus device using reference reticle |
| JPH04262523A (en) * | 1991-02-18 | 1992-09-17 | Toshiba Corp | Aligner |
| JPH06224101A (en) * | 1993-01-26 | 1994-08-12 | Fujitsu Ltd | Bifocal lens and alignment device |
| JPH09199387A (en) * | 1996-01-12 | 1997-07-31 | Canon Inc | Position sensor, and semiconductor-element manufacturing method using the sensor |
| JP2001338867A (en) * | 2000-05-30 | 2001-12-07 | Nikon Corp | Lighting device, position-measuring device, and aligner and exposure method |
| JP2004103644A (en) * | 2002-09-05 | 2004-04-02 | Sumitomo Heavy Ind Ltd | Apparatus and method for detecting position of approaching mask and wafer |
| JP4390512B2 (en) * | 2003-09-22 | 2009-12-24 | 大日本印刷株式会社 | Exposure method and substrate alignment method used in the method |
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- 2006-09-25 KR KR1020087007852A patent/KR101205522B1/en active IP Right Grant
- 2006-10-05 TW TW95136982A patent/TWI446122B/en active
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| CN101258448B (en) | 2012-05-30 |
| WO2007043324A1 (en) | 2007-04-19 |
| CN101258448A (en) | 2008-09-03 |
| JP2007102094A (en) | 2007-04-19 |
| KR20080053481A (en) | 2008-06-13 |
| TW200731031A (en) | 2007-08-16 |
| JP4754924B2 (en) | 2011-08-24 |
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