JP3326446B2 - Exposure method and apparatus, lithography method, mark printing apparatus, and proximity exposure apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used, for example, in manufacturing a semiconductor element, a liquid crystal display element or a printed circuit board by a photolithography process, and is provided on a photosensitive substrate arranged close to or in close contact with a mask. The present invention relates to a proximity exposure apparatus that prints the pattern of the mask.

[0002]

2. Description of the Related Art For example, when a semiconductor device, a liquid crystal display device, a printed circuit board or the like is manufactured by a photolithography process, a photomask or a reticle (hereinafter, collectively referred to as "mask") is illuminated with exposure light, and the mask There is used a proximity exposure apparatus which prints a mask pattern on a substrate which is disposed close to or in close contact with a photosensitive material and coated with a photosensitive material.

FIG. 4 shows a first conventional proximity exposure apparatus. In FIG. 4, light from a light source 1 such as an ultra-high pressure mercury lamp is condensed by an elliptical mirror 2 and travels to a dichroic mirror 3. The dichroic mirror 3 reflects exposure light in a wavelength range for exposing the photoresist,
This exposure light is incident on an optical integrator (such as a fly-eye lens) 4. Then, exposure light from a number of secondary light sources formed by the optical integrator 4 is reflected by the concave mirror 5 and becomes a substantially parallel light beam to illuminate the mask M. The mask M is held on a mask table MT for positioning the mask M in the XY plane, with the plane parallel to the pattern forming surface of the mask M as the XY plane and the optical axis of the illumination optical system as the Z axis. Also, the mask M
(Wafer, glass plate, etc.) P coated with photoresist in close proximity or close contact with the pattern forming surface on the lower surface of P
The substrate P is held on a substrate stage PS for positioning the substrate P in the XY plane.
The pattern of the mask M is transferred onto the substrate P under the exposure light from the concave mirror 5.

Alignment marks 6A and 6B are formed at both ends of the mask M in the X direction parallel to the plane of FIG. In order to perform the alignment (alignment) of the mask M or the mutual alignment of the mask M and the substrate P, alignment systems 7A and 7B are arranged near the upper portions of the alignment marks 6A and 6B of the mask M, respectively. I have. In one alignment system 7A, at the time of alignment, the alignment light emitted from the alignment light source 8A is transmitted to the illumination relay lens 9A, the half mirror 10A, the reflection mirror 11A,
Then, the alignment mark 6A of the mask M and the substrate P are illuminated via the first objective lens 12A. However, FIG. 8 shows a state in which the reflection mirror 11A and the first objective lens 12A are retracted in the -X direction.

The light reflected from the alignment mark 6A (including the light reflected from the alignment mark on the substrate P when the alignment mark is present on the substrate P) is reflected by the first objective lens 12A, the reflection mirror 11A, Image sensor 1 via half mirror 10A and second objective lens 13A
An image of the alignment mark 6A (and the alignment mark on the substrate P) is formed on the imaging surface 4A. The other alignment system 7B is also composed of the light source 8B to the image sensor 14B symmetrically to the above-described alignment system 7A.

In the actual sequence of exposure and alignment, first, the reflecting mirror 11A and the first objective lens 12A of the alignment system 7A are moved onto the alignment mark 6A, and the reflecting mirror 11B and the first objective lens 12B of the alignment system 7B are aligned. Move on the mark 6B. Then, after measuring the positions of the alignment marks 6A and 6B and aligning the mask M, the one reflecting mirror 11A and the first objective lens 12A and the other reflecting mirror 11B and the first objective lens 12B are mutually moved. The substrate P having the pattern of the mask M in a state of being evacuated in the opposite direction.
Is exposed for the first time. By this exposure, the alignment marks 6A and 6B on the mask M are also transferred onto the substrate P.

When exposing the pattern of the mask M on the pattern formed on the substrate P in the previous steps, one of the reflection mirror 11A and the first objective lens 12A and the other of the first objective lens 12A are exposed. The reflection mirror 11B and the first objective lens 12B are moved above the alignment marks on the mask M, respectively. Then, after observing the alignment mark on the substrate P and the alignment mark on the mask M at the same time and performing alignment between the mask M and the substrate P, one of the reflection mirror 11A and the first objective lens 12A is again The pattern of the mask M is exposed on the substrate P while retracting the other reflection mirror 11B and the first objective lens 12B. Further, when exposing a pattern of three or more layers on the substrate P, the pattern of the mask M is exposed so that the alignment mark of the mask M is not overlaid on the substrate P during the second and subsequent exposures. Before the top exposure, the alignment mark of the mask M is covered with a mark shutter (not shown).

FIG. 5 shows a second conventional proximity exposure apparatus. The second proximity exposure apparatus is the same as the prior art of FIG. 4 except that the illumination optical system is constituted by a refraction system. In FIG. 5, portions corresponding to those in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted. That is, FIG.
, The light from the light source 1 for exposure enters the optical integrator 4 via the collimator lens 15, and the exposure light from the many secondary light sources formed by the optical integrator 4 is
6 illuminates the mask M as a substantially parallel light beam. Even in this case, the alignment marks 6A and 6A
Alignment systems 7A and 7B are respectively disposed so as to be able to be retracted in the vicinity above B. Mark shutter 1 is provided between first objective lenses 12A and 12B and mask M, respectively.
7A and 17B are provided. Mark shutter 17
A and 17B move above the alignment marks 6A and 6B, respectively, when it is necessary to avoid illuminating the alignment marks 6A and 6B of the mask M with exposure light. Other configurations are the same as those in FIG.

In recent years, as the exposure area on the mask M is enlarged, the optical elements of the illumination optical system (the concave mirror 5 in FIG.
Condenser lens 16) tends to be large.

[0010]

In the above-mentioned prior art, there is a disadvantage that an alignment error occurs due to collapse of the telecentricity of the exposure light. This will be described with reference to FIGS. First, in FIG. 4, the illumination optical system is telecentric on the mask M side in design. That is, by design, the chief ray of the exposure light IL from the concave mirror 5 is incident on the mask M almost perpendicularly on the entire surface of the mask M in parallel.
A and 6B should be transferred onto the substrate P vertically downward. However, in practice, as the exposure area on the mask M is enlarged, the telecentricity of the exposure light may be lost near the contour of the exposure area.

As shown in FIG. 6, with the gap between the lower surface of the mask M and the exposed surface of the substrate P as Z, the principal ray IL2 of the exposure light illuminating the alignment mark 6A is shifted by an angle θ from the normal line of the mask M. It shall be inclined. In this case, the alignment mark 6A is transferred onto the substrate P along the principal ray IL2, and after the development, the alignment mark 1
8A is formed. Assuming that the displacement amount of the alignment mark 18A due to the exposure light is Δ, the displacement amount Δ is as follows.

Δ = Z · tan θ (1) If the principal ray of the alignment light AL from the alignment system 7A in FIG. 4 is perpendicular to the mask M as shown in FIG. 6A and misalignment Δ between alignment mark 18A on substrate P
However, the alignment error directly results.

More specifically, in the conventional concave mirror type proximity exposure apparatus shown in FIG.
1000 mm, the distance between the optical integrator 4 and the concave mirror 5 is 500 mm, and the exposure area on the mask M is 1
00 mm square, 100 μm gap between mask M and substrate P
FIG. 7 shows the positional deviation between the pattern on the mask M and the pattern transferred on the substrate P when m. In FIG. 7, a rectangular frame 19 shows the outline of a pattern transferred onto the substrate P when the telecentricity is maintained on the entire surface, and arrows extending from each point on the frame 19 indicate actual exposure. The exaggerated position deviation to the corresponding point on the pattern to be performed is shown. For example, 1 on frame 19
At one corner 19a, a displacement of 0.48 μm occurs.

As can be seen from the equation (1), when the principal ray of the alignment light from the alignment systems 7A and 7B is perpendicular to the substrate P, the inclination angle θ of the principal ray of the exposure light changes. However, even if the gap Z between the mask M and the substrate P fluctuates when the inclination angle θ is not 0, the positional deviation amount (alignment error) Δ changes. Also,
Conventionally, there has been an inconvenience that the illuminance of the exposure light decreases as the exposure area on the mask M increases. That is, as the exposure area becomes larger, the alignment marks in the area circumscribing the normal exposure area must also be exposed, and the area of the area to be actually exposed becomes larger.
The illuminance in the exposure area is greatly reduced.

[0015] In view of the above, the present invention can perform high-accuracy alignment of one or both of the mask and the substrate, and
It is an object of the present invention to minimize a decrease in illuminance of exposure light due to expansion of an exposure area on a mask.

[0016]

SUMMARY OF THE INVENTION A proximity exposure apparatus according to the present invention comprises, as shown in FIG. 1, a mask (M) on which a pattern for transfer and a mark (6A) for alignment are formed, and the mask. After alignment with the photosensitive substrate (P) arranged close to or in close contact with
In a proximity exposure apparatus that exposes a transfer pattern of the mask on the substrate, the transfer pattern of the mask (M) is illuminated with first exposure light (IL1) that exposes the photosensitive substrate (P). The first illumination optical system (1, 2
1, 15, 4, 16).

Further, according to the present invention, the alignment mark (6A) of the mask is illuminated with the second exposure light for exposing the photosensitive substrate (P), and is separated from the first illumination optical system. The second illumination optical system (22, 24A, 25A, 9A, 12)
A, 11A) and an alignment optical system (1) for detecting the position of a mark (6A) for alignment of the mask using position detection light insensitive to the photosensitive substrate (P).
1A, 12A, 10A, 13A, and 14A), the mark (6A) for positioning the mask is transferred onto the substrate (P) by the second exposure light, and the mask is used by the position detection light. The position of the alignment mark (6A) is detected.

In this case, the light source of the second illumination optical system and the light source of the alignment optical system are shared, and the second exposure light and the position detection light are obtained from the light from the shared light source (22). Wavelength selecting means (25A, 26
A) may be provided. Next, a lithography method according to the present invention includes a step of printing a transfer pattern provided on a mask (M) onto a substrate (P). Using the first illumination optical system that illuminates with the exposure light
A first step of printing the transfer pattern on the substrate, and supplying a second exposure light different from the first exposure light.
Using the second illumination optical system that, viewed contains a second step of printing a mark for alignment on the substrate, a first irradiation thereof
The bright optical system and its second illumination optical system are separated . Further, the mark printing apparatus according to the present invention uses the illumination optical system to transfer the transfer pattern provided on the mask (M).
In a mark printing apparatus used in a lithography step including a step of illuminating with a system and printing on a photosensitive substrate (P), the mark optical system is separated from the illumination optical system.
Exposure light that exposes the photosensitive substrate
To the substrate and print the alignment mark on the substrate.
It is provided with an illumination optical system for burning a mark for attachment . An exposure apparatus according to the present invention is an exposure apparatus used in a lithography step including a step of printing a transfer pattern provided on a mask (M) onto a substrate (P), the apparatus including the mark printing apparatus of the present invention. Illuminating the mask with the first exposure light, and printing the transfer pattern on the mask onto the substrate. Further, the exposure method of the present invention is an exposure method used in a lithography step including a step of printing a transfer pattern provided on a mask (M) onto a substrate (P), using the exposure apparatus of the present invention. The pattern for transfer on the mask is printed on the substrate.

[0019]

According to the present invention, the first illumination optical system for exposing the transfer pattern on the mask (M) and the alignment mark (6A) on the mask (M) are exposed. And a second illumination optical system. Therefore, even if the transfer pattern (exposure area) on the mask (M) is widened, the alignment marks (6A) outside the transfer pattern (6A) are illuminated by another illumination optical system. The area is not so large, and the illuminance of the exposure light does not decrease significantly.

Further, the telecentricity of the second exposure light with respect to the alignment mark (6A) is reduced by the second exposure light.
The correction can be easily made only by adjusting the illumination optical system, and the alignment error by the alignment optical system is reduced. In addition, since alignment can be performed during exposure, alignment accuracy is further improved. Moreover, the alignment mark (6A) can be used without affecting the illuminance of the actual exposure light.
The degree of freedom in selecting the position is increased.

The light source of the second illumination optical system and the light source of the alignment optical system are shared, and the second exposure light and the position detection light are converted from the light from the shared light source (22). Selectable wavelength selecting means (25A, 26A)
Is provided, the optical system is simplified.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. In FIG. 1, portions corresponding to those in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted. FIG. 1 is a schematic diagram of a proximity exposure apparatus of the present embodiment. In FIG. 1, a photoresist extracted by a wavelength filter plate 21 from light from a light source 1 such as an ultra-high pressure mercury lamp is exposed. Exposure light (for example, a g-line having a wavelength of 436 nm or an i-line having a wavelength of 365 nm) IL1 in the wavelength range to be incident enters the optical integrator 4 via the collimator lens 15. Then, the exposure light I from the secondary light source by the optical integrator 4
L passes through the condenser lens 16 and passes through the mask table M
The mask M held at T is illuminated with substantially uniform illuminance.
Under the exposure light IL1, the pattern of the mask M is transferred onto the substrate P on which the photoresist is applied. The substrate P is
The exposure surface is sucked and held on the substrate stage PS such that the exposure surface is close to or close to the mask M.

At the circumscribed portion of the exposure area of the mask M in the X direction, alignment marks 6A and 6B, such as cross marks, are formed. Reflection mirrors 11A and 11B are provided above the alignment marks 6A and 6B, respectively. Are arranged so as to intersect at about 45 ° with the Z-axis parallel to the optical axis of. These reflection mirrors 1
Alignment marks 6 outside 1A and 11B respectively
Exposure and alignment optical systems for A and 6B are arranged.

In one optical system, light from a light source 22 composed of an ultra-high pressure mercury lamp is incident on one end of a first optical fiber bundle 24A via a collimator lens 22, and the first
The light emitted from the other end of the optical fiber bundle 24A is the first light.
Interference filter plate 25A or second interference filter plate 26
A is transmitted to the illumination relay lens 9A. In this example, as the alignment light for observing the alignment marks 6A and 6B, light insensitive to the photoresist on the substrate P having a different wavelength range from the exposure light IL1 (for example, e-ray having a wavelength of about 500 nm or more). , D-line, etc.) are used. The light emitted from the light source 22 includes the exposure light IL.
Light in the same wavelength range as that of No. 1 and light in the same wavelength range as its alignment light are mixed.

Therefore, the first interference filter plate 25A allows light having the same wavelength range as the exposure light IL1 and the alignment light to pass from the light emitted from the first optical fiber bundle 24A, and the second interference filter plate 26A From the light emitted from the first optical fiber bundle 24A, only light in the same wavelength range as the alignment light is allowed to pass. Then, the switching device 27A switches the first
Either the first interference filter plate 25A or the second interference filter plate 26A is set in front of the exit surface of the optical fiber bundle 24A.

The light ILA that has passed through the interference filter plate 25A or 26A illuminates the alignment mark 6A on the mask M via the illumination relay lens 9A, the half mirror 10A, the first objective lens 12A, and the reflection mirror 11A.
When the alignment mark is formed on the substrate P, the alignment mark on the substrate P is also irradiated with the light ILA.

Then, the alignment mark 6 of the mask M
A (and possibly an alignment mark on the substrate P)
Is reflected by the reflection mirror 11A, passes through the first objective lens 12A, the half mirror 10A, and the second objective lens 13A, and is two-dimensionally imaged by a charge-coupled imaging device (CCD) or the like. The light enters the imaging surface of the element 14A. The alignment mark 6A of the mask M (and the substrate P
The image of the upper alignment mark) is formed. The other alignment system 7B is also symmetrical to the alignment system 7A,
The second optical fiber bundle 24B is composed of a two-dimensional image sensor 14B, and the light source 22 is commonly used. Then, under the light ILB emitted from the light source 22 and transmitted through either the first interference filter plate 25B or the second interference filter plate 26B, the alignment mark 6B on the mask M (and on the substrate P as the case may be). Is formed on the image pickup surface of the image pickup device 14B.

Next, the operation of the exposure apparatus of this embodiment will be described with reference to FIG. FIGS. 2A and 2B are enlarged views of a portion A surrounding the reflection mirror 11B of FIG. 1, respectively.
2A shows the case where the first exposure is performed on the substrate P, FIG.
(B) shows the time of alignment and the time of exposure when performing the second exposure on the substrate P. First, when the first exposure is performed on the substrate P, the first interference filter plate 25B is arranged in front of the exit surface of the second optical fiber bundle 24B in FIG. 1, and the exposure light IL1 and the alignment light are mixed. The light ILB is guided toward the reflection mirror 11B.

In this case, in FIG.
The alignment mark 6B is irradiated with light ILB indicated by a dotted line in which the exposure light IL1 and the alignment light are mixed, and the alignment mark 6B is exposed on the substrate P in parallel with the position detection of the alignment mark 6B. Is done. Further, the pattern of the mask M is exposed on the substrate P by the original exposure light IL1 shown by the solid line. By subjecting the substrate P to a development process or the like, an alignment mark 28B is formed on the substrate P.

Thereafter, when the second exposure is performed on the substrate P, a second interference filter plate 26B is disposed in front of the exit surface of the second optical fiber bundle 24B in FIG. The ILB is guided toward the reflection mirror 11B.
Thereby, as shown in FIG. 2B, the alignment mark 29B of the mask M and the alignment mark 28B on the substrate P for performing the second exposure are irradiated with light ILB composed of alignment light. Therefore, the images of the alignment marks 29B and 28B are formed on the imaging surface of the imaging device 14B in FIG. 1, and the alignment between the mask M and the substrate P is set by setting the positional shift amounts of both marks in a predetermined relationship. Is performed. Thereafter, the pattern of the mask M is overlaid on the substrate P and exposed by the original exposure light IL1 shown by the solid line.

That is, in this embodiment, at the time of the first exposure to the substrate P, light including a wavelength for exposing the photoresist on the substrate P is irradiated to the alignment mark of the mask M, and At the time of the second exposure, the interference filter plate 25 is irradiated with light having a wavelength that does not expose the photoresist to the alignment mark of the mask M.
B and 26B are selected. However, if the circuit pattern formed on the substrate P has only two layers, or the alignment marks on the substrate P may be destroyed, the alignment marks on the mask M are also used during the second exposure. It is a matter of course that the exposure light IL1 for exposing the photoresist and the alignment light may be mixed.

According to the present embodiment as described above, the mask M
The transfer pattern and the alignment mark are illuminated with exposure light from different light sources, so that even if the transfer pattern (exposure area) is widened, the exposure area is not so much larger than in the past. Therefore, the illuminance of the exposure light on the transfer pattern does not significantly decrease. In this example, the exposure light and the alignment light for the alignment marks 6A and 6B of the mask M are shared by the objective lens 12
A and 12B. Therefore, since the exposure light and the alignment light have the same telecentricity,
The position of the mask M and the substrate P can be aligned with high accuracy without causing a position shift due to the collapse of the telecentricity of the exposure light.

Further, the position of the alignment mark can be detected even during the exposure of the alignment mark, and the alignment accuracy is also improved in this respect. Further, since it is not necessary to evacuate the optical system of the alignment system during the exposure as in the related art, the alignment time is reduced, and the throughput of the exposure process is improved. Next, a second embodiment of the present invention will be described with reference to FIG. In this example, the light source of the alignment light and the light source of the exposure light for the alignment mark are separated. In FIG. 3, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 3 shows an exposure apparatus according to the present embodiment. In FIG. 3, light from a light source 22 composed of an ultra-high pressure mercury lamp is emitted from the other end of the first optical fiber bundle 24A, and the light is used as an interference filter plate. Exposure light in the same wavelength range as the exposure light IL1 is selected by 21A and guided to the illumination relay lens 9A. After the exposure light for the alignment mark that has passed through the illumination relay lens 9A passes through the dichroic mirror 30A that passes the exposure light and reflects the alignment light,
The alignment mark 6A on the mask M is illuminated via the first objective lens 12A and the reflection mirror 11A. The other alignment mark 6B is also symmetrically placed on the interference filter plate 2.
It is illuminated with light of the same wavelength band as the exposure light IL1 transmitted through 1B.

In this embodiment, the alignment marks 6A,
Light sources 8A and 8B for generating alignment light for detecting the position of 6B are provided separately from the light source 22 for exposure. As the light sources 8A and 8B for alignment,
Non-photosensitive alignment light (for example, wavelength 5) is applied to the photoresist on the substrate P having a different wavelength range from the exposure light IL1.
For example, a halogen lamp that generates
An LED or a He-Ne laser light source is used.

The alignment light from the light source 8A passes through the illumination relay lens 31A and the half mirror 10A to the dichroic mirror 30A.
The alignment light reflected by the first objective lens 12
The alignment mark 6A on the mask M (and the alignment mark on the substrate P as the case may be) is illuminated via the mirror A and the reflection mirror 11A. Then, the mask M and the substrate P
Is reflected by the reflection mirror 11A and the first objective lens 1.
2A, dichroic mirror 30A, half mirror 10
A, and the light enters the imaging device 14A via the second objective lens 13A, and an image of the alignment mark 6A of the mask M (and, in some cases, the alignment mark on the substrate P) is formed on the imaging surface of the imaging device 14A. The image of the alignment mark formed by the alignment light from the other alignment light source 8B is also formed on the imaging surface of the imaging element 14B. Other configurations are the same as those in FIG.

In the embodiment shown in FIG. 3, the light source 22 for exposure is used.
From the alignment mark 6 on the mask M
A and 6B are transferred and exposed on the substrate P, and the alignment of the mask M alone or the mask M and the substrate P is performed by the alignment light from the light sources 8A and 8B. In this embodiment, although not shown, mark shutters are arranged between the light source 22 and the dichroic mirror 30A and between the light source 22 and the dichroic mirror 30B, for example, for the second time on the substrate P. To avoid exposure of the alignment marks 6A and 6B as in the case of exposure,
Alignment mark 6 by these mark shutters
It is necessary to avoid exposure light exposure to A and 6B. Also in the second embodiment, since the transfer pattern of the mask M and the alignment mark are illuminated with exposure light from different light sources, even if the transfer pattern (exposure area) is widened, the exposure is smaller than before. The area is not so large. Therefore, the illuminance of the exposure light on the transfer pattern does not significantly decrease.

In the above embodiment, the image pickup devices 14A, 14A,
Although the position detection was performed using the 14B, a two-beam interference detecting a diffraction grating mark as an alignment mark and detecting the position of the diffraction grating mark from the interference light of a pair of diffracted light returned from the diffraction grating mark The present invention can be applied as it is even when a method or an alignment system using a photoelectric microscope is used.

As described above, the present invention is not limited to the above-described embodiment, and it is needless to say that various configurations can be adopted without departing from the gist of the present invention.

[0040]

According to the present invention, since the transfer pattern of the mask and the alignment mark are illuminated by exposure light from different illumination optical systems, the transfer pattern (exposure area) is Even if it becomes wider, the overall exposure area will not be as wide as in the prior art, and the illuminance in that exposure area will not decrease so much. Insensitive to photosensitive substrates
Using the optical position detection light, a mask
An alignment optical system for detecting the position of the
In this case, since the telecentricity of the exposure light and the position detection light with respect to the transfer pattern of the mask can be easily equalized, there is an advantage that the alignment between the mask and the substrate can be performed with high accuracy.

Further, even when the exposure area is changed without changing the mask size, the optimum illuminance can be obtained only by changing the optical integrator in the first illumination optical system. Further, regarding the alignment, the alignment can be performed using the position detection light even during the exposure, and the alignment accuracy from this plane is improved. Further, the light source of the second illumination optical system and the light source of the alignment optical system are shared, and the light from the shared light source is used as the second light source.
When the wavelength selecting means for selecting the exposure light and the position detection light is provided, the optical system is simplified.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a proximity exposure apparatus according to the present invention.

FIGS. 2A and 2B are optical path diagrams each showing a portion A surrounding a reflection mirror 11B in FIG. 1, wherein FIG. 2A is an optical path diagram at the time of first exposure to a substrate P, and FIG. 2
It is an optical path diagram at the time of the second exposure.

FIG. 3 is a schematic configuration diagram showing a second embodiment of the present invention.

FIG. 4 is a schematic configuration diagram showing a first conventional proximity exposure apparatus.

FIG. 5 is a schematic configuration diagram showing a second conventional proximity exposure apparatus.

FIG. 6 is a diagram illustrating a positional shift of an alignment mark due to a loss of telecentricity of exposure light.

FIG. 7 is a plan view illustrating an example of a state of a positional shift of a pattern on a substrate P due to collapse of telecentricity of exposure light.

[Explanation of symbols]

 Reference Signs List 1 light source for exposure 4 optical integrator M mask P substrate 6A, 6B alignment mark 8A, 8B light source for alignment 9A, 9B illumination relay lens 10A, 10B half mirror 12A, 12B first objective lens 13A, 13B second objective lens 14A, 14B Image sensor 15 Collimator lens 16 Condenser lens 21, 21A, 21B Interference filter plate 22 Light source for alignment mark exposure 24A, 24B Optical fiber bundle 25A, 25B First filter plate 26A, 26B Second filter plate

Claims (13)

(57) [Claims] After positioning a mask on which a pattern for transfer and a mark for positioning are formed, and a photosensitive substrate disposed close to or in close contact with the mask, the substrate is aligned. In a proximity exposure apparatus for exposing a pattern for transfer of the mask thereon, a first illumination optical system for illuminating the pattern for transfer of the mask with first exposure light for exposing the photosensitive substrate, Illuminating a pattern for mask alignment with second exposure light that sensitizes the photosensitive substrate , the first illumination light
A second illumination optical system separated from the optical system, an alignment optical system that detects the position of a mark for alignment of the mask using a non-photosensitive position detection light with respect to the photosensitive substrate, Transferring the mark for alignment of the mask onto the substrate with the second exposure light, and detecting the position of the mark for alignment of the mask with the position detection light. Proximity exposure equipment. 2. A wavelength for sharing a light source of the second illumination optical system and a light source of the alignment optical system, and selecting the second exposure light and the position detection light from the light from the shared light source. 2. A method according to claim 1, further comprising selecting means.
The proximity exposure apparatus as described in the above. 3. A lithography method including a step of printing a transfer pattern provided on a mask onto a substrate, wherein the first illumination illuminates the transfer pattern on the mask with first exposure light. A first step of printing the transfer pattern on a substrate by using an optical system ; and a second step of supplying a second exposure light different from the first exposure light .
Using second illumination optical system, a second step burn marks for alignment on the substrate; look including a first illumination optical system and the second illumination optical system is separated
Lithography wherein the are. Wherein said first and second step lithography method according to claim 3, characterized in that it is performed at the same time. The method according to claim 5, wherein the first step, by using the first illumination optical system illuminates a pattern for the transfer, in the second step, different second from the first illumination optical system
The lithography method according to claim 3, wherein the alignment mark is printed using an illumination optical system. 6. The method of claim 3, 4, or 5 lithographic method according to further comprising a third step of detecting a mark for the alignment. Wherein said lithography method according to claim 6, wherein the second used in step through a part of the optical system for detecting the mark for the alignment. 8. The method according to claim 3, wherein, in the second step, a mark provided on the mask is transferred onto the substrate using the second exposure light. Lithography method. 9. illuminating a pattern to be transferred, which is provided on the mask using an illumination optical system, the mark printing apparatus used in a lithography process including a step of baking the photosensitive substrate, wherein the illumination optical system Is separated from the photosensitive substrate
Exposure light for exposing the photosensitive substrate to the photosensitive substrate,
Marks for printing alignment marks on the board
A mark printing device comprising a printing illumination optical system. Wherein said illumination optical system includes a feature that guides the second exposure light from the light source to a region on a different said substrate from said first region through which the exposure light from reaching on the substrate The mark printing apparatus according to claim 9, wherein the mark is printed. 11. The mark printing apparatus according to claim 9, wherein the illumination optical system guides the second exposure light from the light source to a mark provided on the substrate. 12. An exposure apparatus used in a lithography step including a step of printing a transfer pattern provided on a mask onto a substrate, comprising: the mark printing apparatus according to claim 9, 10 or 11, An exposure apparatus, wherein the mask is illuminated with the exposure light of claim 1 and the transfer pattern on the mask is printed on the substrate. 13. An exposure method used in a lithography step including a step of printing a transfer pattern provided on a mask onto a substrate, wherein the transfer apparatus on the mask uses an exposure apparatus according to claim 12. An exposure method, wherein a pattern is printed on the substrate.