JP5282941B2 - Proximity exposure equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a proximity exposure apparatus capable of enhancing surface flatness of a color filter by suppressing the protuberance at a part where a black matrix and a picture element outer periphery are overlapped with each other. <P>SOLUTION: The proximity exposure apparatus includes: a conveyance stage 4 conveying an exposure object W mounted thereon; an exposure mask 31 provided with an exposure pattern by which the exposure object W is exposed; a mask holder 30 provided above the conveyance stage 4 and holding at least one exposure mask 31; a mask holder driving device 32 holding the mask holder 30 slantingly in the conveyance direction of the exposure object W; and a light source 2a for exposure provided above a mask holder 32. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

The present invention relates to an exposure mask used for manufacturing a color filter such as a liquid crystal panel or a plasma display, and an exposure apparatus using the exposure mask. Specifically, the exposure mask unit composed of a plurality of small exposure masks is exposed. The present invention relates to an exposure apparatus that is close to and opposed to an object.

A color filter for a liquid crystal panel is manufactured by applying a negative photosensitive composition (color resist) containing a colorant on the entire surface of a substrate on which a black matrix is formed, and using a proximity exposure apparatus to apply red ( A portion of the colored layer of R), green (G), and blue (B) is exposed to light in order and then developed, whereby a colored layer pattern (hereinafter simply referred to as “picture”) separated by a black matrix on the substrate. A color filter having a “element part” is manufactured, but the flatness of the surface decreases when the overlapping part of each pixel part outer edge and the black matrix rises as shown in FIG. To do.
Therefore, as a method of preventing the bulge, exposure to the overlapping portion is performed by adjusting a gap (hereinafter referred to as “proximity gap”) between an exposure mask and a substrate that is an object to be exposed, and performing defocus exposure. A method of reducing the amount so that the overlapping portion is easily dissolved and removed by development to reduce the bulge amount (Patent Document 1) and an exposure light transmission portion (hereinafter simply referred to as “transmission hole”) of the exposure mask. The shape of “.” Is an opening of the black matrix (the above-mentioned planned pixel portion) (hereinafter, simply referred to as “pixel”) and is located several μm inside the periphery of each pixel. There is known a method of providing an island shape inside (Patent Document 2) and the like.
Further, the applicant assigns a region composed of a plurality of light-transmitting holes having the same shape, which is disposed at a predetermined pitch, followed by the shape of the light-transmitting holes, which is disposed at the predetermined pitch. A method of reducing the amount of swell by irradiating a plurality of similar exposure light on an object to be exposed using an exposure mask having a region formed of a plurality of light-transmitting parts having a similar shape (Patent Document 3)

JP-A-9-159815 JP 2001-33613 A Japanese Patent Application No. 2008-

However, in defocus exposure, due to the exposure mask being bent by its own weight, the proximity gap cannot be kept uniform over the entire exposure area, resulting in variations in the proximity gap and variations in thickness. May cause new problems with surface flatness.

On the other hand, in the method using the shape of the light transmission hole of the exposure mask that is several μm inside the pixel periphery of the black matrix, it is difficult to position the exposure mask with respect to the pixel of the black matrix, and there is variation in the pixel position of the black matrix. Each pixel part cannot be provided in an island shape at an appropriate position inside the pixel, so that a so-called white-out portion is generated and the quality of the color filter may be deteriorated.
Further, in the method using a plurality of similar exposure patterns, the number ratio of the similar exposure patterns may vary depending on the intensity of exposure light and the exposure characteristics of the negative photosensitive composition exposure object. .

  The present invention has been made in view of the above circumstances, and by using an exposure mask composed of a plurality of exposure patterns having the same shape, the swell in the overlapping portion of the black matrix and the outer edge of the picture element portion is made as much as possible. It is an object of the present invention to provide a proximity exposure apparatus that can be suppressed to a small size, improve the surface flatness of the color filter, and improve the accuracy of the color filter.

The present invention is characterized by the following points in order to solve the above problems.
In other words, the proximity exposure apparatus according to claim 1 is configured to place a flat plate-like object to be exposed and convey it in a certain direction, and an exposure pattern having the same shape along a direction parallel to the conveyance direction. A plurality of exposure masks arranged above the transfer stage, a mask holder holding at least one of the exposure masks, and the mask holder tilted in the transfer direction of the object to be exposed A mask holder driving device for holding the light source and a light source for irradiating ultraviolet rays for exposure disposed above the mask holder.

A proximity exposure apparatus according to claim 2 is the proximity exposure apparatus according to claim 1, wherein gap sensors for detecting gaps between the flat plate-shaped object to be exposed are provided at four corners of the mask holder . It is characterized by that.

The present invention has the following excellent effects.
Since the exposure mask has an angle with the substrate to be exposed and in the transport direction, the exposure pattern can be sequentially defocused, and the amount of exposure light with respect to the overlapping portion can be reduced.
Further, since the exposure mask and the exposure target substrate have an angle in the X-axis direction, the gas between the exposure mask and the exposure target substrate can easily flow in one direction, and the gas around the exposure mask is caused by the flow. Be attracted in the same direction.
As a result, the exposure product gas is less likely to stay between the exposure mask and the exposure target substrate, and the contamination of the exposure mask is reduced.

In addition, since gap sensors are arranged at the four corners of each mask holder, the angles of each mask holder in the X-axis direction and the Y-axis direction with respect to the exposure target substrate can be easily measured, and the adjustment of the angles is easy. it can.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a conceptual diagram showing a proximity exposure apparatus 1 according to an embodiment of the present invention.
The proximity exposure apparatus 1 includes an exposure light source unit 2, an exposure mask unit 3, a work transport apparatus 4 that transports an exposure target substrate, a beam 5 that straddles the work transport apparatus 4, an illumination light source 6, and an imaging unit 7. And a control device (not shown) for controlling them.
In the following description, the case where the substrate to be exposed is a color filter substrate (hereinafter simply referred to as “work W”) (FIG. 11) coated with a color resist as a photosensitive resin will be described.

The exposure light source unit 2 converts the exposure light emitted from the light source 2a (for example, an ultra-high pressure mercury lamp, a xenon lamp or an ultraviolet light emitting laser) that emits exposure light (ultraviolet light) into a predetermined bundle of parallel light. And an optical system 2b. The optical system 2b is disposed above the exposure mask unit 3, and the optical system 2b faces an exposure mask 31 described later. The light source 2a is connected to the control device via a light source controller (not shown).
Further, the illumination light source 6 irradiates parallel white light onto a viewing window 31c portion (FIG. 3) of an exposure mask 31 described later.

  As shown in FIG. 2, the exposure mask unit 3 includes a mask holder 30, gap sensors 32 a provided at four corners of the mask holder 30, at least one exposure mask 31 mounted on the mask holder 30, and the mask holder 30. And a mask holder driving means 32 that moves in the Y-axis and Z-axis directions and rotates around the θ-axis, α-axis, and β-axis.

The mask holder driving means 32 is for holding the exposure mask 31 with a predetermined gap (for example, 100 to 300 μm) in close proximity to the workpiece W, and the Y axis of the mask holder 30. , Each axis drive means 32y, 32z, 32θ, 32α, 32β for moving in the Z-axis direction and rotating on the θ-axis, α-axis, and β-axis.

That is, the α-axis drive means 32α is for rotating the mask holder 30 about the α-axis, and the angle in the X-axis direction formed by the exposure mask 31 on the mask holder 30 and the workpiece W is set to a desired angle. (Fig. 4).
The β-axis driving means 32β is for rotating the mask holder 30 about the β-axis, and sets the angle in the Y-axis direction formed by the exposure mask 31 on the mask holder 30 and the workpiece W in parallel. Is.
Further, the θ-axis driving means 32θ is for rotating the mask holder 30 about the θ-axis, and the alignment of the exposure pattern 31c of the exposure mask 31 on the mask holder 30 in the X-axis direction It is parallel to the transport direction.
The rotation center of each θ axis is located at the center of the mask holder 30 in plan view, the rotation center of the β axis is located on the center line in the Y axis direction of the mask holder 30, and the rotation center of the α axis is The mask holder 30 is located on one side parallel to the Y-axis direction.

As shown in FIG. 3, the exposure mask 31 includes a transparent substrate 31a (for example, quartz glass) that transmits ultraviolet light and visible light with high efficiency, and a light-shielding film 31b that is applied to the transparent substrate 31a and shields exposure light. The light-shielding film 31b is arranged in a matrix and includes a plurality of mask patterns 31e that transmit exposure light, a mask-side viewing window 31c, and a mask-side alignment mark 31d.

A wavelength-selective film (not shown) that allows white light to pass through and blocks ultraviolet light is applied to the surface of the mask-side viewing window 31c.
As a result, the exposure light applied to the exposure mask 31 is reflected by the light shielding film 31b and does not irradiate the workpiece W through the surface other than the mask pattern 31e.
The exposure mask 31 is set on the mask holder 30 so that the mask side observation window 31c is on the upstream side (right side in FIG. 1) in the conveyance direction A of the workpiece W.

The mask pattern 31e has a shape that substantially matches the shape of a pixel WP (FIG. 10) of the workpiece W described later. In parallel to the direction orthogonal to the arrow A (Y-axis direction), the pitches are formed at intervals equal to the three pitch intervals of the pitch (Py) of the pixels WP. It is formed with the same pitch.
Further, as shown in FIG. 3, for example, an edge S2 in the Y-axis direction of the mask pattern 31e located at the center is set in advance as a reference position.

The mask side alignment mark 31d is made of a material that blocks both white light and ultraviolet light in the mask side viewing window 31c, and the edge S1 of the mask side alignment mark 31d in the Y-axis direction, the edge S2 of the mask pattern 31c, Are drawn to match.

The workpiece transfer device 4 is disposed below the exposure mask unit 2 and includes a stage 40 and a workpiece transfer means 41.
The stage 40 has a large number of ejection holes (not shown) for ejecting gas and a number of suction ports for sucking gas on the upper surface, and is connected to a compressed gas supply device and a gas suction device (not shown) to eject gas. The workpiece W is floated on the stage 40 due to the balance of suction, and a portion facing the exposure mask 31 is opened, and the workpiece W at the exposure position by the photomask 31 is opened in the opening portion 40a. An image pickup means 7 for picking up an image of the workpiece W from the lower side at a position (FIG. 4) on the near side in the transport direction (arrow A) of the photomask 31 and immediately below the mask side viewing window 31 c of the photomask 31. It is provided towards.

The workpiece transfer means 41 can transfer the workpiece W on the stage 40 in the direction of the arrow A in a state where a part of the workpiece W (one of the edges parallel to the transfer direction of the workpiece W) is held by a holding means (not shown). Furthermore, a work position sensor (not shown) for detecting the position of the work W in the direction of the arrow A is further provided.

The imaging means 7 is provided in the opening 40a below the mask side viewing window 31e of the exposure mask 31 so as to face the lower surface of the work W, and as shown in FIG. A line sensor 70 (FIG. 5) comprising a plurality of image sensors 70a arranged in a line in a direction perpendicular to the direction), and a lens system 71 having a predetermined depth of focus provided between the line sensor 70 and the workpiece W. The optical path length correcting means 72 is disposed between the lens system 71 and the image sensor 70a and advances and retreats in the X-axis direction (the direction of arrow B in FIG. 8).

The optical path length correcting means 72 includes an optical member 72a having different thicknesses in stages and an optical member driving device 72b for moving the optical member 72a forward and backward in the arrow B direction.
As shown in FIG. 9, the optical member driving device 72b includes a holder 72b1 that holds the optical member 72a, and a pair of guides 72b2 that support two opposing sides of the holder 72b1 and are movable in the direction of the arrow B. 72b2, a ball screw (not shown) provided along the one guide 72b2, a ball nut (not shown) fitted to the holder 72b1 and fitted to the ball screw, and one end of the ball screw A drive motor 72b3 that is attached to rotate the ball screw and a rotary encoder (not shown) attached to the drive motor 72b3 are provided.

The drive motor 72b3 is connected to the control device via a motor controller (not shown), and the rotary encoder is connected to the control device.
The line sensor 70 is arranged such that a predetermined light receiving element 70a in the group of light receiving elements 70a constituting the line sensor 70 corresponds to the edge S1 of the mask side alignment mark 31d of the exposure mask 31. Yes.

The optical member 72a is made of a homogeneous transparent material, and has a reference surface 72a1 and a plurality of step-like planes parallel to the reference surface 72a1, as shown in FIG.
The thicknesses of the plurality of stepped planes (hereinafter simply referred to as “stepped portions”) (72a2 to 72a7) from the reference plane 72a1 are t1 to t6, respectively.
The thicknesses t1 to t6 vary depending on the magnification of the lens system 71, the depth of focus, the required optical path length difference, and the material of the optical member 72a. For example, the magnification of the lens system 51 is 5 times and the material of the optical member 72a. In the case where the refractive index is 1.5168, the depth of focus is ± 20 μm, and the required optical path length difference is in the range of 150 μm to 350 μm, and the correction of this optical path length difference is set in units of 1 μm, t1 to t6 are These are 7.3 mm, 9.4 mm, 11.6 mm, 13.7 mm, 15.8 mm, and 18 mm, respectively.
The optical path length difference is obtained by the following equation.
Optical path length difference = T × (N−1) / (N × M ² )
Where T: optical member thickness, N: optical member refractive index, M: lens system magnification

That is, when the focal depth of the lens system is ± 20 μm, it is possible to image up to an optical path length difference of ± 20 μm with one plane portion, but when the optical path length difference is more than that, a step portion with the next thickness is provided. The optical path length is corrected by moving the optical element 70a on the optical axis.
Therefore, when the focal position of the lens system is made to coincide with the surface of the planar portion of each optical member, the optical path length adjustable range of the planar portion (from t1 to t6) of each optical member is 117 to 157 μm, 157 to 197 μm, 197 to 237 μm, 237 to 277 μm, 277 to 317 μm, and 317 to 357 μm.

The imaging means 7 can capture and image a substrate-side alignment mark WB formed on the workpiece W (to be described later) and a mask-side alignment mark 31d formed on the exposure mask 31 in the same field of view, respectively, with the above-described configuration. It is.
That is, as shown in FIG. 6, in the state in which the substrate side alignment mark WB of the workpiece W is imaged by the imaging unit 7 (the state where the condensing point F coincides with the line sensor 70), the imaging unit 7 The light a emitted from the mask-side alignment mark 31d of the exposure mask 31 whose optical distance from the lens system 71 is farther than the substrate-side alignment mark WB of the workpiece W forms an image on the front side of the image sensor 70a as it is. However, by passing through the optical member 72 a of the optical path length correction means 72, the optical path length becomes longer, and the light can be condensed on the line sensor 70. Thereby, the mask side alignment mark 31d and the substrate side alignment mark WB can be simultaneously imaged on the line sensor 50.

Next, the exposure operation of the proximity exposure apparatus 1 configured as described above will be described with reference to the accompanying drawings.
Here, as shown in FIG. 10, the work W to be used has an opaque film made of Cr or the like formed on one surface of a transparent glass substrate, and a plurality of pixels WP are arranged in a matrix in an exposure region on the opaque film. An ultraviolet curable color resist (red, blue, green) is applied to the formed surface.

In the non-exposure region, a substrate-side viewing window WW on which no opaque film is formed, and a substrate-side alignment mark WB drawn by a material that blocks both white light and ultraviolet light in the substrate-side viewing window WW, , And the edge S5 of the substrate side alignment mark WB is provided at a position that coincides with the edge S4 of the predetermined pixel WPK1 as shown in FIG.
Before the exposure operation, the optimum exposure condition (the thickness of the overlapping portion is determined from the test results using the exposure mask 31 and the angle α1 of the workpiece W in the X-axis direction (FIG. 4), the intensity of exposure light, and the number of flashes as parameters. The condition to minimize is determined).

Further, the Y, Z, θ, α, and β axis driving units 32y, 32z, 32θ, 32α, and 32β are driven to set the plurality of exposure masks 31 to the initial state.
This initial state is the pitch between the exposure masks 31, the parallelism of the exposure masks 31 and the workpiece W in the Y-axis direction, the angle α1 between the exposure masks 31 and the workpiece W in the X-axis direction, and the exposure masks. This means that the minimum gap between the workpiece 31 and the workpiece W is in a predetermined state.
Note that the angle α1 formed by the exposure mask 31 and the workpiece W in the X-axis direction is set so as to open in accordance with the downstream side in the conveyance direction A of the workpiece W.
As a result, the projections of the exposure pattern 31e on the workpiece W increase in order as shown in FIG. However, the angle α1 is determined so that the width of the projection pattern of the exposure pattern 31e does not exceed the intermediate line LN between the adjacent pixels WP in the Y-axis direction.
Further, during the exposure operation, when the gas between the exposure mask 31 and the workpiece W is heated by the exposure light and expands, the gas expands toward the downstream side in the conveyance direction of the workpiece W, and the exposure mask 31 and the workpiece W1. The gas flow is likely to occur between the two (arrow B in FIG. 4).

Next, the lens system 71 of the imaging unit 7 is set so that an image of the pixel WP of the workpiece W is formed on the imaging unit 7 as an initial preparation. In this case, it is preferable that an image of the pixel WP of the work W is formed on the line sensor 70 at a substantially central position of the focal depth of the lens system 71.
Next, the difference in optical distance (L1, L2) between the imaging means 7 between the workpiece W and the exposure mask 31 is calculated, and the thickness portion of the optical member 72a is commensurate with correcting the difference in optical distance. (For example, 72a3) is positioned on the optical axis of the portion that shares the imaging of the mask-side alignment mark 31d of the line sensor 70 by operating the driving motor 72b3 of the optical member driving device 72b.
As a result, the substrate-side alignment mark WB of the workpiece W and the mask-side alignment mark 31d of the exposure mask 31 can be imaged on the line sensor 70 simultaneously.

Next, an exposure operation is started. By the workpiece conveying means 43, the workpiece W is continuously conveyed in the direction of arrow A with the workpiece side observation window WW first. When the workpiece W passes over the imaging unit 5, the imaging unit 5 simultaneously images the substrate-side alignment mark WB and the mask-side alignment mark 31 d of the workpiece W by the imaging unit 7.

Thereafter, the images of the substrate-side alignment mark WB and the mask-side alignment mark 31d of the workpiece W that are simultaneously imaged are processed simultaneously by an image processing unit (not shown).
At this time, the edge S5 of the substrate-side alignment mark WB of the workpiece W is detected, the cell number of the light-receiving element 70a of the line sensor 70 detected, and the light reception of the line sensor 70 that detects the edge S1 of the mask-side alignment mark 31d of the exposure mask 31. The cell number of the element 70a is read, and the distance Ly is calculated. Then, it is compared with a predetermined distance L0 set and stored in advance.

When the workpiece W is displaced in the Y-axis direction with respect to the exposure mask 31 (Ly ≠ L0 ± β) (β is an allowable value), the distance Ly is set to L0 ± β by the mask holder driving unit 32. Thus, the exposure mask 31 is moved in the Y-axis direction. As a result, the distance Ly between the mask side alignment mark 31d of the exposure mask 31 and the substrate side alignment mark WB of the workpiece W matches within a predetermined allowable range (L0 ± β).
Note that the state where the distance Ly is within a predetermined allowable range (L0 ± β) is a state where the exposure pattern 31e is positioned on the pixel WP without deviation by the exposure light.
If the distance Ly does not match within a predetermined allowable range, for example, the workpiece W is determined to be of a different type, or an opaque film formation product of the workpiece W, and in this case, the exposure is stopped. Alarm is issued.

When the distance Ly is matched within a predetermined allowable range, it is determined that the alignment of the workpiece W and the exposure mask 31 in the Y-axis direction has been performed reliably, and the workpiece W is continuously conveyed. Reaches the predetermined exposure position (position where the image of the exposure pattern 31e of the exposure mask 31 and the pixel WP of the workpiece W overlap), the light source 2a starts blinking, and the pitch Px interval of the pixel WP (pitch Px is set to the workpiece P). The blinking is continued at a time (T2) interval obtained by dividing by the conveyance speed Wv of W.
Specifically, the edge parallel to the Y axis of the line sensor 70 and the exposure pattern 31e (first exposure pattern 31e in the conveyance direction of the workpiece W) from the time when the line sensor 70 detects the edge S5B of the substrate side alignment mark W2. The distance Lx2 (FIG. 12) in the X-axis direction between the edge S5B of the substrate-side alignment mark WB and the edge S7 of the pixel WP is added to the X-axis direction distance Lx1 (FIG. 4) with the downstream edge of the workpiece W in the transport direction. The blinking of the light source 2a is started from the point of time (T1) obtained by dividing the added length by the transport speed Wv of the work W, and the pitch Px interval of the pixel WP (the pitch Px is the transport speed of the work W). Flashing is continued at a time (T2 interval obtained by dividing by Wv).

As a result, when the pixel WP is positioned immediately below the exposure pattern 31e, a predetermined amount of exposure light is irradiated from the light source 2a to the exposure pattern 31e through the optical system 2b, and each pixel WP is exposed a plurality of times (exposure). The number of patterns 31e in the X-axis direction) is exposed. In this embodiment, one pixel WP is exposed five times with exposure light.
As a result, since the projected area of the exposure pattern 31e for each pixel WP becomes as shown in FIG. 13, the exposure light quantity of the overlapping portion decreases in order from the inside of the pixel WP, and the thickness of this portion becomes gentle (FIG. 14 ( b)).

Thereafter, along with the continuous conveyance of the work W, the edge S3 of the reference pixel WPK2 set in advance and the respective edges of the pixels WP aligned in the X-axis direction of the reference pixel WPK2 (on the extension line of the edge S3 of the pixel WPK2) When the cell number of the image sensor 70a of the line sensor 70 that continuously captures the edges of the image sensor is different from the initial state (the state where Ly is set within L0 ± α), the cell number of each image sensor 70a From the above, in the control device, the distance (deviation amount) of the workpiece W in the Y-axis direction is calculated.

Then, based on the amount of deviation, a signal is sent from the control device to the Y-axis drive unit 32y of the mask holder drive unit 32, and the mask holder 30 is moved in the Y-axis direction, and each pixel WP is moved. The cell number of the image sensor 70a that captures the edge (the edge on the extension line of the edge S3 of the pixel WPK2) is always maintained to be the initial cell number.
Thereby, even if the workpiece W is conveyed while meandering in a direction orthogonal to the conveyance direction indicated by the arrow A, the exposure mask 31 is moved following the movement, and the image of the mask pattern 31e of the exposure mask 31 is moved to the target position. Will be transferred with high accuracy.

In the above embodiment, the case where the substrate-side alignment mark WB is formed on the workpiece W has been described. However, the present invention is not limited to this, and the substrate-side alignment mark WB may be omitted. In this case, the result of detecting the edge S4 of the reference pixel WPK1 by the imaging means 5 may be used for the detection of L instead of the edge S5 of the substrate side alignment mark WB.

In the above embodiment, the case where the workpiece W is continuously conveyed in the predetermined direction (arrow A) during the exposure operation has been described. However, the present invention is not limited to this, and the conveyance unit 4 is set to step feed. The workpiece W may be subjected to step exposure with a predetermined exposure pattern 31e.

In the above description, the case where the workpiece W is a color filter substrate has been described. However, the present invention is not limited to this, and any semiconductor substrate or the like may be used as long as it forms a predetermined exposure pattern.

It is a front view which shows schematic structure of 1st Embodiment of the proximity exposure apparatus by this invention. It is a schematic perspective view which shows the example of 1 structure of the mask holder used in the said exposure apparatus. It is the schematic for demonstrating the exposure mask used in the said exposure apparatus, Comprising: (a) is a top view, (b) is a perspective view. It is a conceptual diagram for demonstrating the angle which the exposure mask used in the said exposure apparatus and the to-be-exposed board | substrate form, and the gas flow between the exposure mask and to-be-exposed board | substrate by this. It is explanatory drawing which shows the structure of the imaging means used in the said exposure apparatus. It is a conceptual diagram for demonstrating an effect | action of the optical distance correction | amendment means used in the said exposure apparatus. It is explanatory drawing for demonstrating the optical member used in the said optical distance correction | amendment means. It is a conceptual diagram for demonstrating the motion of the optical member in the said optical distance correction | amendment means. It is a conceptual diagram for demonstrating the structure of the optical distance correction | amendment means used in the said exposure apparatus. It is explanatory drawing for demonstrating the to-be-exposed board | substrate supplied in the said exposure apparatus. It is a conceptual diagram for demonstrating the positional relationship of the to-be-exposed board | substrate and exposure mask in the said exposure apparatus of the Y-axis direction. It is a conceptual diagram for demonstrating the positional relationship of the to-be-exposed board | substrate in the said exposure apparatus, and the Y-axis direction of an imaging means. It is a conceptual diagram for demonstrating the X-axis direction inclination of the exposure mask in the said exposure apparatus, and the change of the projection area of an exposure pattern. It is sectional drawing for demonstrating the overlapping part of the color resist in the pixel outer edge of a color filter.

Explanation of symbols

1: Proximity exposure apparatus 2 of the first embodiment: Exposure light source unit 2a: Exposure light source 2b: Optical system 3: Exposure mask unit 4: Work transfer device 5: Beam 6: Illumination unit 6a: Illumination light source 7: Imaging means 30: Mask holder 31: Exposure mask 31d: Mask side alignment mark 31e: Mask side observation window 32: Mask holder driving means 40: Stage 70: Line sensor 70a: Light receiving element 71: Lens system 72: Optical path length correction means 72a : Optical member W: Workpiece WB: Substrate side alignment mark WP: Pixel

Claims (2)

A transport stage on which a plate-shaped object is placed and transported in a fixed direction, an exposure mask in which a plurality of exposure patterns of the same shape are arranged along a direction parallel to the transport direction, and the transport stage A mask holder for holding at least one of the exposure masks, a mask holder driving device for holding the mask holder inclined in the transport direction of the object to be exposed, and the mask holder And a light source for irradiating ultraviolet light for exposure disposed in the proximity exposure apparatus. 2. The proximity exposure apparatus according to claim 1, wherein a gap sensor for detecting a gap between the flat plate-shaped object to be exposed is disposed at four corners of the mask holder .