CN113826047A

CN113826047A - Exposure device

Info

Publication number: CN113826047A
Application number: CN202080036482.XA
Authority: CN
Inventors: 河东和彦; 羽生慎一
Original assignee: Beac Co Ltd
Current assignee: Beac Co Ltd
Priority date: 2019-10-18
Filing date: 2020-10-08
Publication date: 2021-12-21
Also published as: JP2021067717A; WO2021075355A1; JP6729954B1

Abstract

The exposure apparatus 1 of the present invention divides an exposure target region 14 into a first exposure target region 14A and a second exposure target region 14B, and transfers mask patterns 17A, 17B onto a substrate 10 by using a first photomask 11A corresponding to the first exposure target region 14A and a second photomask 11B corresponding to the second exposure target region 14B. The exposure apparatus 1 includes: a first table 25 and a second table 26 connected in series, and having: an alignment mechanism 28 for aligning the relative position between the substrate 10 and the photomasks 11A and 11B; and exposure light irradiation mechanisms 30A and 30B for switching the light emitted from the light source 45 as exposure light 50 between the first photomask 11A and the second photomask 11B. According to the exposure apparatus 1 of the present invention, the cost of the photomask can be reduced, and the mask pattern can be transferred onto a large-sized substrate with high accuracy.

Description

Exposure device

Technical Field

The present invention relates to an exposure apparatus.

Background

Conventionally, when a circuit pattern is formed on a substrate or the like by a photolithography process, a photosensitive material on the substrate is exposed to light through a photomask by an exposure apparatus, and the mask pattern is transferred onto the substrate. In recent years, the size of a photomask has been increased with the increase in the size of a substrate. However, the cost of the photomask depends on the planar size thereof, resulting in an increase in the cost due to a large size of the photomask. In addition, in the process of batch exposure using a large-sized photomask, there is also a problem that it is difficult to ensure the accuracy of the outer peripheral portion with respect to the central portion of the substrate. Therefore, there is an exposure apparatus that divides an exposure target region of a substrate, repeats an exposure process using a photomask corresponding to the divided exposure target region, and transfers a predetermined mask pattern onto a large-sized substrate.

In such an exposure apparatus, an exposure target region of a substrate is divided into two parts, i.e., a first exposure target region and a second exposure target region, a first photomask and a second photomask corresponding to the divided exposure target regions are prepared, the first exposure target region is exposed using the first photomask on the same stage, then the second exposure target region is exposed using the second photomask, and a mask pattern is transferred onto a large-sized substrate (see, for example, patent document 1).

Further, the exposure apparatus for transferring a mask pattern onto a large-sized substrate using the first photomask and the second photomask corresponding to the divided exposure target regions includes: a first stage on which a substrate and a first photomask are arranged, a second stage on which a substrate and a photomask are arranged, and an optical path switching unit that switches an optical path from a light source (see, for example, patent document 2). In such an exposure apparatus, the mask pattern of the first exposure target region is transferred onto the first stage, the optical path is switched by the optical path switching unit, and the mask pattern of the second exposure target region is transferred onto the second stage. The light path switching unit is used for alternately switching the light emitted from the light source between a light path emitted to the first workbench and a light path emitted to the second workbench.

As a first example of a specific example of the exposure apparatus described in patent document 2, there is disclosed an exposure apparatus in which a substrate transfer robot that transfers or removes a substrate to a first stage and a second stage and a mask transfer robot that transfers a photomask to each stage are arranged in parallel.

In a second example of the specific example, an exposure apparatus is disclosed in which, as a substrate transport unit, a first stage, a second stage, and independent endless conveyors are provided between the first stage and the second stage, respectively, and a substrate is transported in accordance with exposure timing of each stage.

[ Prior Art document ]

[ patent document 1 ] Japanese patent application laid-open No. 2007-178770

[ patent document 2 ] Japanese patent laid-open No. 2003-228169

The exposure apparatus described in patent document 1 is an apparatus that transfers a mask pattern to a first exposure target region using a first photomask on the same stage, and then switches to a second photomask to transfer the mask pattern to a second exposure target region. Therefore, repeating the exposure process 2 times has a problem that the working beat (tactime) becomes long. In addition, since the adjacent first exposure target region overlaps with the second exposure target region, there is a problem of double exposure, and therefore, a light shielding plate is used in this region to adjust the exposure amount. However, the use of the light shielding plate may restrict the structure of the transfer pattern. Further, since the light shielding plate is disposed between the photomask and the substrate, a gap between the photomask and the substrate is increased, which results in a decrease in accuracy of the transfer pattern.

In the first example of the exposure apparatus described in patent document 2, the exposure process may be performed on each of the first stage and the second stage. However, since the substrate transfer robot and the mask transfer robot are arranged in parallel, the exposure apparatus is increased in size.

In the second example of the exposure apparatus described in patent document 2, the mask transfer units are arranged in parallel, but since the endless belt is used as the substrate transfer unit, the apparatus can be further miniaturized compared to the first example. However, since the substrate is stopped on the end conveyor at each stage area, the substrate cannot be directly brought into close contact with the stage. This makes it difficult to maintain the alignment between the substrate and the photomask with high accuracy, and further, to maintain the alignment of the substrate at the time of pattern transfer with high accuracy. Further, since the light source is disposed on the upper side and the mirror for switching the optical path is disposed on the lower side with the special conveyor as the substrate conveyance unit interposed therebetween, the light emitted from the light source is reflected by the mirror for switching the optical path after passing through the special conveyor. The light reflected by the optical path switching mirror passes through the special conveyor again. This causes deterioration, damage, adhesion of dust, and the like of the special conveyor belt, which leads to a decrease in light transmittance.

In the second example, the exposure light is blocked when the substrate is transported between the first and second tables, and the irradiation of the exposure light is stopped, and therefore, there is a problem that the control by intermittently transporting the substrate becomes more complicated, and the productivity is lowered.

The present invention has been made to solve at least one of the above problems, and an object of the present invention is to provide an exposure apparatus capable of reducing the cost of a photomask, transferring a mask pattern to a large-sized substrate with high accuracy, and improving the productivity even when a divisional exposure system is employed.

Disclosure of Invention

【1】 An exposure apparatus of the present invention is an exposure apparatus that divides one of a plurality of exposure target regions, which have a photosensitive layer and are arranged in series in a transport direction of a long substrate, into a first exposure target region and a second exposure target region by a virtual dividing line of an arbitrary shape, and transfers a mask pattern onto the substrate using a first photomask corresponding to the first exposure target region and a second photomask corresponding to the second exposure target region, the exposure apparatus including: a first stage arranged upstream in a transport direction of the substrate and supporting the exposure target region of the substrate; a second stage disposed downstream of the first stage and supporting the exposure target region; a substrate transfer mechanism that transfers the exposure target region from the first stage to the second stage; "an alignment mechanism that aligns the alignment between the first exposure object region and the first photomask on the first stage" and "an alignment mechanism that aligns the alignment between the second exposure object region and the second photomask on the second stage"; and an exposure light irradiation mechanism that irradiates light emitted from a light source as exposure light onto the first photomask on the first stage and onto the second photomask on the second stage.

In the following description, dividing an exposure target region and performing exposure using a photomask corresponding to the divided exposure target region are collectively referred to as: split exposure or split exposure.

【2】 In the exposure apparatus of the present invention, the exposure target region is divided by the virtual dividing line in the width direction of the substrate, the first photomask includes a mask pattern formed in a range of the first exposure target region and a light shielding region formed in a second exposure target region, and the second photomask includes a mask pattern formed in a range of the second exposure target region and a light shielding region formed in the first exposure target region.

【3】 In the exposure apparatus of the present invention, the exposure target region is divided by the virtual dividing line in the longitudinal direction of the substrate, the first photomask has a planar size covering the first exposure target region, and the second photomask has a planar size covering the second exposure target region.

【4】 In the exposure apparatus of the present invention, the alignment mechanism is disposed for each of the first stage and the second stage, and one of the alignment mechanisms includes: position detection means for detecting positions of the first exposure object region and the first photomask; and a photomask moving mechanism that aligns a position of the first photomask with the first exposure target region based on a detection result, another of the alignment mechanisms having: position detection means for detecting positions of the second exposure target region and the second photomask; and a photomask moving mechanism that aligns a position of the second photomask with the second exposure target region based on the detection result. In addition, in the following description, the exposure process includes a series of processes of transferring a mask pattern onto a substrate from alignment (registration) of the substrate with a photomask and irradiation of exposure light.

【5】 In the exposure apparatus of the present invention, further comprising: and a substrate intermediate support mechanism disposed between the first stage and the second stage.

【6】 In the exposure apparatus of the present invention, the exposure light irradiation mechanism includes the light source and a mirror that reflects light emitted from the light source and irradiates the first photomask or the second photomask with the reflected light as exposure light, and the exposure light irradiation mechanism is disposed above the first stage and the second stage, respectively.

【7】 In the exposure apparatus of the present invention, the exposure light irradiation mechanism further includes: and an optical path switching unit disposed above an intermediate position between the first stage and the second stage, the optical path switching unit configured to switch the light beam emitted from the light source to be irradiated to the first photomask or the second photomask.

【8】 In the exposure apparatus of the present invention, when a mechanism structure including the first stage, the second stage, the substrate transport mechanism, the alignment mechanism, and the intermediate substrate support mechanism is set as a first exposure line, the exposure apparatus further includes: a second exposure line which is identical to the first exposure line structure and is arranged in parallel with the first exposure line, wherein the exposure light irradiation mechanism is arranged: one of the exposure light irradiation mechanisms is provided with: an optical path switching unit that switches the first photomask for which exposure light irradiates the first exposure light or the first photomask for which exposure light irradiates the second exposure light, the other exposure light irradiation mechanism having: and an optical path switching unit that switches the second photomask in which the exposure light irradiates the first exposure light or the second photomask in which the exposure light irradiates the second exposure light. The term parallel here also includes parallel conditions which are not mathematically strict.

【9】 In the exposure apparatus of the present invention, when a mechanism structure including the first stage, the second stage, the substrate transport mechanism, the alignment mechanism, and the intermediate substrate support mechanism is a first exposure line, the exposure apparatus further includes a second exposure line arranged in parallel with the first exposure line, and the exposure light irradiation mechanism includes: and an optical path switching unit that is disposed above a center portion in a plane direction of the first exposure line and the second exposure line, and switches between the first photomask and the second photomask for which the first exposure line is irradiated with the exposure light, and the first photomask and the second photomask for which the second exposure line is irradiated with the exposure light.

【10】 In the exposure apparatus of the present invention, the front and back surfaces of the substrate have photosensitive layers, the first photomask, the second photomask, the alignment mechanism, and the exposure light irradiation mechanism disposed on the front surface side of the substrate are disposed to face the first photomask, the second photomask, the alignment mechanism, and the exposure light irradiation mechanism disposed on the back surface side of the substrate with the first stage and the second stage interposed therebetween, and the first stage and the second stage are provided with through holes through which the exposure light is irradiated to the back surface of the substrate.

Effects of the invention

According to the exposure apparatus of the present invention, it is possible to reduce the cost of a photomask, transfer a mask pattern to a large-sized substrate with high accuracy, and improve productivity even when a divisional exposure system is employed.

Drawings

Fig. 1 is a partial plan view of a substrate 10 in which an exposure target region 14 is divided in a width direction of the substrate 10, and shows an example of a transfer pattern 12.

Fig. 2 is a plan view of first photomask 11A.

Fig. 3 is a plan view of second photomask 11B.

Fig. 4 is a partial plan view of the substrate 10 in which the exposure target region 22 is divided in the longitudinal direction of the substrate 10, and shows an example of the transfer pattern 21.

Fig. 5 is a plan view of first photomask 20A.

Fig. 6 is a plan view of the second photomask 20B.

Fig. 7 is a front view showing a schematic configuration of the exposure apparatus 1.

Fig. 8 is a plan view showing a schematic configuration of the exposure apparatus 1.

Fig. 9 is a flow chart showing the main processes of the exposure method when the exposure apparatus 1 is used.

Fig. 10 is a plan view showing a schematic configuration of the exposure apparatus 2.

Fig. 11 is a flow chart showing the main processes of the exposure method when the exposure apparatus 2 is used.

Fig. 12 is a plan view showing a schematic configuration of the exposure apparatus 3.

Fig. 13 is an explanatory diagram for explaining the structure and operation of the exposure light irradiation mechanism 55A on the first stage 25 side as viewed from the left side (thick arrow direction) of fig. 12.

Fig. 14 is an explanatory diagram for explaining the structure and operation of the exposure light irradiation mechanism 55B on the second stage 26 side as viewed from the left side (thick arrow direction) of fig. 12.

Fig. 15 is a flow chart showing the main processes of the exposure method when the exposure apparatus 3 is used.

Fig. 16 is a plan view showing a schematic structure of the exposure apparatus 4.

Fig. 17 is an explanatory diagram showing the structure and operation of the exposure light irradiation mechanism 62, and shows a state when the exposure light 50 is irradiated to the first exposure light 60 side.

Fig. 18 is an explanatory diagram showing the structure and operation of the exposure light irradiation mechanism 62, and shows a state when the exposure light 50 is irradiated to the second exposure light 61 side.

Fig. 19 is a flow chart showing the main processes of the exposure method when the exposure apparatus 4 is used.

Fig. 20 is a front view showing a schematic configuration of the exposure apparatus 5.

Fig. 21 is a flow chart showing the main processes of the exposure method when the exposure apparatus 5 is used.

Detailed Description

Hereinafter, an exposure apparatus according to an embodiment of the present invention will be described with reference to the drawings. The drawings described below are schematic diagrams, and do not strictly reflect actual structures, dimensions, vertical and horizontal scales, and the like. The mask pattern described below refers to a hole pattern provided on a photomask through which exposure light passes, the pattern transfer refers to a step of transferring the mask pattern onto a substrate by irradiating exposure light through the photomask, and the transfer pattern refers to the transfer step.

[ structures of substrate 10, first photomask 11A and second photomask 11B ]

First, a configuration example of the substrate 10, the first photomask 11A, and the second photomask 11B, which are exposure targets, will be described with reference to fig. 1 to 3. The example shown in fig. 1 to 3 is an example in which the exposure target region 14 is divided into two parts in the width direction of the substrate 10.

Fig. 1 is a partial plan view of the substrate 10 when the exposure target region 14 is divided in the width direction of the substrate 10, and shows an example of the transfer pattern 12. The mask pattern 12 shown in fig. 1 is actually arranged at a high density and may be formed of a curved line, but it is simplified in fig. 1. In the following description, the transport direction (longitudinal direction) of the substrate 10 is referred to as X direction, the width direction is referred to as Y direction, and the direction perpendicular to the X-Y plane is referred to as Z direction or vertical direction. The substrate 10 is a photosensitive substrate having a photosensitive layer formed on the front surface thereof, and has an outer shape of a long substrate wound in a roll shape.

A plurality of through holes 13 are formed in the substrate 10 shown in fig. 1, and the transfer pattern 12 is connected to pads of two through holes 13. However, there is also a case where one transfer pattern 12 connects a plurality of through holes 13. The formation range of the transfer pattern 12 will be described as the exposure target region 14. Although the exposure target region 14 is not visible in the drawing for the sake of convenience in showing the range of exposure light when the transfer pattern 12 is formed, it is arranged in series in the conveyance direction of the substrate 10. One exposure object region 14 corresponds to one cycle amount of the exposure process. The exposure target region 14 is divided into a first exposure target region 14A and a second exposure target region 15B by a virtual dividing line 15 in the width direction of the substrate 10. The virtual dividing line is a line that cannot be actually recognized, and will be described as a dividing line in the following description. In fig. 1, the transfer pattern in the first exposure target region 14A is referred to as a transfer pattern 12A, and the transfer pattern in the second exposure target region 14B is referred to as a transfer pattern 12B. The transfer pattern 12 is formed by synthesizing the transfer pattern 12A and the transfer pattern 12B. Identification marks 16 are arranged at four corners of the substrate 10 outside the exposure target region 14. The identification mark 16 is a so-called alignment mark for performing alignment with the

photomasks

11A and 11B.

In the related art, the mask pattern 12 is transferred onto the substrate 10 by using one photomask 11, but if the substrate 10 (the region to be exposed 14) has a large planar size, the dimensional error tends to be larger in the outer peripheral portion of the photomask 11 than in the central portion. Therefore, in the present embodiment, the exposure target region 14 is divided into the first exposure target region 14A and the second exposure target region 14B by the dividing line 15 in the width direction (Y direction) of the substrate 10. A photomask corresponding to the first exposure target region 14A is set as a first photomask 11A (see fig. 2), a photomask corresponding to the second exposure target region 14B is set as a second photomask 11B (see fig. 3), and a mask pattern is transferred onto the substrate 10 using two photomasks. The shape of the dividing line 15 is an arbitrary shape that can divide the first exposure region 14A and the second exposure region 14B without dividing the transfer pattern.

Fig. 2 is a plan view of first photomask 11A. A mask pattern 17A arranged on the first exposure target region 14A is formed on the first photomask 11A. The mask pattern 17A is a hole through which exposure light passes, and the transfer pattern 12A is formed on the substrate 10 by exposure processing.

Recognition marks 18 are provided at four corners of first photomask 11A. The recognition mark 18 is disposed at the same position as the recognition mark 16 provided on the substrate 10, and the recognition mark 16 on the substrate 10 side can be visually recognized from above the photomask 11A, and the positional deviation between the recognition mark 16 and the recognition mark 18 is detected by using a CCD camera 36 (see fig. 7) as a position detection device, whereby the substrate 10 and the photomask 11A can be aligned. The identification mark 18 shown in fig. 2 is circular, but may be triangular, square, or other polygonal shape, and the shape is not limited as long as the identification mark 16 can be detected by the CCD camera 36. On the other hand, the identification mark 16 on the substrate 10 side is not limited to a circular shape, and may be a cross or the like. The identification marks 16 and 18 are arranged outside the exposure target region 14. The hatched region in the figure is a light-shielding region 19, and the region of the second exposure target region 14B is the light-shielding region 19.

Fig. 3 is a plan view of second photomask 11B. A mask pattern 17B arranged in the second exposure target region 14B is formed on the second photomask 11B. The mask pattern 17B is a hole through which exposure light passes, and the transfer pattern 12B is formed on the substrate 10 by exposure processing. Recognition marks 18 are arranged at four corners of second photomask 11B. The identification mark 18 is disposed at the same position as the identification mark 16 provided on the substrate 10. That is, identification marks 18 having the same position and the same shape are provided on first photomask 11A and second photomask 11B. Therefore, in the exposure process using the two sheets of

photomasks

11A, 11B, the positional deviation of the

transfer patterns

12A, 12B with respect to the through-hole 13 can be suppressed. In the figure, the hatched region is a light-shielding region 19, and the range of the first exposure target region 14A is the light-shielding region 19. The first photomask 11A shown in fig. 2 and the second photomask 11B shown in fig. 3 are examples of hard masks in which a chromium light-shielding film is formed on a glass substrate. [ structures of the substrate 10, the first photomask 20A, and the second photomask 20B ]

Next, a description will be given of a configuration example of the substrate 10 and the first and

second photomasks

20A and 20B as exposure objects with reference to fig. 4 to 6. The examples shown in fig. 4 to 6 are examples in which the exposure target region 22 is divided into two parts in the longitudinal direction (conveyance direction) of the substrate 10.

Fig. 4 is a partial plan view of the substrate 10 when the exposure target region 22 is divided in the longitudinal direction of the substrate 10, and shows an example of the transfer pattern 21. The mask pattern 21 shown in fig. 4 is actually arranged at a high density and may be formed of a curved line, but it is shown in fig. 4 for simplicity. The transfer pattern 21 shown in fig. 4 shows an example of being elongated in the longitudinal direction. The substrate 10 is a photosensitive substrate having a photosensitive layer formed on the front surface thereof, and is a long substrate wound in a roll shape.

A plurality of through holes 13 are formed in the substrate 10 shown in fig. 4, and the transfer pattern 21 is connected to pads of two through holes 13. However, there is also a case where one transfer pattern 21 connects a plurality of through holes 13. The formation range of the transfer pattern 21 will be described as the exposure target region 22. The exposure target region 22 shows a range of exposure light irradiation when the transfer pattern 21 is formed. One exposure object region 22 corresponds to one cycle amount of the exposure process. The exposure target region 22 is divided into a first exposure target region 22A and a second exposure target region 22B by a dividing line 23 in the longitudinal direction (conveyance direction) of the substrate 10. The dividing line 23 may be a straight line or an arbitrary curve, or may not bisect the exposure target region 22.

In fig. 4, the transfer pattern in the first exposure target region 22A is defined as a transfer pattern 21A, and the transfer pattern in the second exposure target region 22B is defined as a transfer pattern 21B. The transfer pattern 22 is formed by combining the transfer pattern 22A and the transfer pattern 22B. A photomask corresponding to the first exposure target region 22A is set as a first photomask 20A (see fig. 5), a photomask corresponding to the second exposure target region 22B is set as a second photomask 20B (see fig. 6), and a mask pattern is transferred onto the substrate 10 using two photomasks. In fig. 4, the first photomask 20A is indicated by a dotted line, and the second photomask 20B is indicated by a dot-dash line. Identification marks 16A are arranged at four corners of the substrate 10 outside the exposure target region 20A. Identification mark 16A is used for positional alignment with first photomask 20A. Recognition marks 16A are also arranged at four corners of the substrate 10 outside the exposure target region 20B, and are used for alignment with the second photomask 20B.

In the example shown in fig. 4, the identification mark 16A is provided at 6, but the identification mark 16A at 2 located on the boundary of the first exposure object area 22A and the second exposure area 22A is commonly used for the first photomask 20A and the second photomask 20B. However, the identification mark 16A corresponding to the first photomask 20A may be arranged at four positions, and the identification mark 16A corresponding to the second photomask 20B may also be arranged at four positions.

Fig. 5 is a plan view of first photomask 20A. A mask pattern 24A arranged on the first exposure target region 22A is formed on the first photomask 20A. The mask pattern 24A is a hole through which exposure light passes, and the transfer pattern 21A is formed on the substrate 10 by exposure processing.

Recognition marks 18A are provided at the four corners of the first photomask 20A. The recognition mark 18A is disposed at the same position as the recognition mark 16A provided on the substrate 10, and the recognition mark 16A on the substrate 10 side can be visually recognized from above the first photomask 20A, and the CCD camera 36 (see fig. 7) serving as a position detection device can detect a positional deviation between the recognition mark 16A and the recognition mark 18A, and perform alignment between the substrate 10 and the first photomask 20A. Although the identification mark 18A shown in fig. 5 is circular, it may be triangular, quadrangular, or other polygonal shape, and the shape is not limited as long as the identification mark 16A can be detected by the CCD camera 36. The identification marks 16A, 18A are arranged outside the first exposure target region 22A. In the figure, the hatched region is a light-shielding region 19.

Fig. 6 is a plan view of the second photomask 20B. In the first photomask 20B, a mask pattern 24B arranged in the second exposure target region 22B is formed. The mask pattern 24B is a hole through which exposure light passes, and the transfer pattern 21B is formed on the substrate 10 by an exposure process. In addition, the joint portion of the mask pattern 24A and the mask pattern 24B is highly accurately adjusted in position. However, the joining portions of the two may intersect each other within a few μm, for example.

Recognition marks 18A are provided at the four corners of the second photomask 20B. The recognition mark 18A is disposed at the same position as the recognition mark 16A provided on the substrate 10, and the recognition mark 16A on the substrate 10 side can be visually recognized from above the second photomask 20B, and the CCD camera 36 (see fig. 7) serving as a position detection device can detect a positional deviation between the recognition mark 16A and the recognition mark 18A, and perform alignment between the substrate 10 and the second photomask 20B. The identification marks 16A, 18A are arranged outside the second exposure target region 22B. In the figure, the hatched region is a light-shielding region 19.

Next, a specific embodiment of the exposure apparatus will be described. In the first to fifth embodiments described below, an exposure apparatus applied to the substrate 10, the first photomask 11A, and the second photomask 11B described in fig. 1 to 3 will be described as a typical example. The embodiments can also be applied to the substrate 10, the first photomask 20A, and the second photomask 20B described with reference to fig. 4 to 6. For example, the first photomask 11A may be replaced with the first photomask 20A, the second photomask 11B may be replaced with the second photomask 20B, the transfer pattern 12 may be replaced with the transfer pattern 21, and the exposure target region 14 may be replaced with the exposure target region 22 by common reference numerals between the constituent elements, and therefore, the description of the exposure apparatus using the substrate 10, the first photomask 11A, and the second photomask 11B as the exposure target, which is described with reference to fig. 4 to 6, will be omitted.

[ first embodiment ] to provide a liquid crystal display device

Fig. 7 is a front view of the exposure apparatus 1, and fig. 8 is a plan view of the exposure apparatus 1. In fig. 8, the exposure light irradiation mechanism 30 is not shown. The exposure apparatus 1 forms a transfer pattern 12 by transferring

mask patterns

17A and 17B onto a substrate 10 using a first photomask 11A corresponding to a first exposure target region 14A obtained by dividing an exposure light target region 14 arranged in series on a long photosensitive substrate 10 into two parts and a second photomask 11B corresponding to a second exposure target region 14B.

The exposure apparatus 1 includes a first stage 25 disposed on an upstream side in a conveyance direction (from left to right in the drawing) of the substrate 10 and a second stage 26 disposed on a downstream side. The first table 25 and the second table 26 respectively attract and hold the lower end surface of the exposure target region 14 of the substrate 10. Although not shown, the first table 25 and the second table 26 have suction holes for vacuum-sucking the substrate 10. The first stage 25 is a portion for transferring the mask pattern 17A to the first exposure target region 14A, and the second stage 26 is a portion for transferring the mask pattern 17B to the second exposure target region 14B.

The exposure apparatus 1 includes: a substrate conveying mechanism 27 that conveys the substrate 10 from the first table 25 to the second table 26; and an alignment mechanism 28 for determining a position between the substrate 10 (first exposure target region 14A) and the first photomask 11A and a position between the substrate 10 (second exposure target region 14B) and the second photomask 11B. The first photomask 11A and the second photomask 11B are fixed to the photomask moving mechanism 34 by a mask frame, not shown. The exposure apparatus 1 includes an exposure light irradiation mechanism 30A that irradiates exposure light 50 to the first photomask 11A on the first table 25, and an exposure light irradiation mechanism 30B that irradiates exposure light 50 to the second photomask 11B on the second table 26. The exposure

light irradiation mechanisms

30A and 30B have the same structure.

The substrate conveyance mechanism 27 includes: a substrate delivery roller 31 disposed upstream of the first table 25 in the substrate transfer direction, and a substrate take-up roller 32 disposed downstream of the second table 26 in the substrate transfer direction. The substrate conveyance mechanism 27 further has a substrate intermediate support mechanism 33 between the first table 25 and the second table 26. The substrate intermediate support mechanism 33 is composed of a dancer roller 42 and an intermediate roller 43, and suppresses the substrate 10 from being loosened when the substrate is conveyed. Although not shown, a substrate support table may be provided as the substrate intermediate support mechanism 33 instead of the dancer roller 42. The substrate support table is provided with vacuum suction holes for sucking and holding the substrate 10 in a process other than the substrate conveyance. The substrate carry-out roller 31 and the substrate take-up roller 32 are controlled to convey the substrate 10 at the same point in time and to stop at the same point in time. Further, the nip roller may be disposed forward of the substrate take-up roller 32 in the substrate conveying direction.

The alignment mechanism 28 is disposed on the first table 25 and the second table 26. The alignment mechanism 28 is constituted by a CCD camera 36 as a position detection device and a photomask moving mechanism 34. Since the alignment mechanisms 28 on the first table 25 and the second table 26 have the same configuration, the first table 25 side will be described as a representative example. The CCD camera 36 is disposed at a position where the recognition marks 16 provided at 4 positions on the substrate 10 and the recognition marks 18 provided at 4 positions on the first photomask 11A can be detected. On the first stage 25, the CCD camera 36 simultaneously detects the positions of the recognition marks 16, 18 for determining the positions of the substrate 10, i.e., the first exposure object region 14A and the first photomask 11A. On the second stage 26, the CCD camera 36 simultaneously detects the positions of the recognition marks 16, 18 for determining the positions of the substrate 10, i.e., the second exposure target region 14B and the second photomask 11B.

The photomask moving mechanism 34 includes: an X-axis moving mechanism 38, a Y-axis moving mechanism 39, a Z-axis moving mechanism 40, and a θ -axis rotating mechanism 41. On the first stage 25, the photomask moving mechanism 34 aligns the first photomask 11A (the identification mark 18) with the substrate 10 (the identification mark 16) based on the amount of positional deviation of the identification marks 16, 18 detected by the CCD camera 36. The photomask moving mechanism 34 is aligned with the position in the plane direction by the X-axis moving mechanism 38 and the Y-axis moving mechanism 39, and the θ -axis rotating mechanism 41 is rotated about the Z-axis as a rotation center for correcting the amount of tilt deviation of the first photomask 11A with respect to the X-axis or the Y-axis. The Z-axis moving mechanism 40 moves the first photomask 11A up and down, and adjusts the gap between the substrate 10 and the first photomask to an optimum value (e.g., several μm) for exposure processing. During substrate conveyance, the Z-axis drive mechanism 40 raises the first photomask 11A to a height at which the substrate 10 does not come into contact.

The alignment operation of the second stage can be performed in the same manner as the first stage 25 by replacing the first photomask 11A with the second photomask 11B in the above description, and therefore, the description thereof is omitted here.

In fig. 7 and 8, the alignment mechanism 28 on the first table 25 side and the alignment mechanism 28 on the second table 26 side are arranged to face each other in the same direction, but may be arranged to face each other. By arranging the alignment mechanisms 28 so as to face each other in the same direction, when the first table 25 and the alignment mechanism 28 are integrally unitized, the units including the second table 26 and the alignment mechanism can be provided in the same configuration.

On the first stage 25, the exposure light irradiation mechanism 30A has

mirrors

47, 48, and the

mirrors

47, 48 reflect light emitted from the light source 45 and irradiate the first photomask 11A as exposure light 50. As the optical system of the exposure light irradiation mechanism 30A, a lens that converts the exposure light 50 into parallel light is disposed, but illustration and description thereof are omitted here. The exposure light irradiation mechanism 30A constituted by the light source 45 and the reflection mirrors 47 and 48 is only an example, and the present invention is not limited to this configuration. The second stage 26 also includes an exposure light irradiation mechanism 30B having the same configuration as that of the first stage 25. On the second stage 26, light emitted from the light source 45 is reflected by the

mirrors

47, 48 and irradiated onto the second photomask 11B as exposure light 50.

Next, an exposure method in the case of using the exposure apparatus 1 will be described with reference to a process flow chart shown in fig. 9 and with reference to fig. 1 to 8.

Fig. 9 is a process flow chart showing the main steps of the exposure method when the exposure apparatus 1 is used. Before the exposure apparatus 1 starts operating, the CCD camera 36 that sets the substrate 10 on the first table 25 and the second table 26 can detect the positions of the recognition marks 16, 18. It is assumed that the mask pattern 12 on both the first exposure object region 14A and the second exposure object region 14B is not transferred when the exposure apparatus 1 starts operating. First, on first stage 25, the position of first photomask 11A is aligned with substrate 10 (step S1). In this step, the CCD camera 36 detects the positional deviation of the recognition marks 16 and 18, and the photomask moving mechanism 34 is driven to align the first photomask 11A with an appropriate position of the substrate 10 (first exposure target region 14A).

Next, the exposure light 50 is irradiated from the exposure light irradiation mechanism 30A, the first mask pattern 12A is transferred to the first exposure target region 14A (step S2), and the substrate 10 is conveyed by 1 pitch by the substrate conveyance mechanism 27 (step S3). The exposure target region 14 on the substrate 10 to which the first mask pattern 12A is transferred is held at a predetermined position on the second stage by suction. An exposure target region 14 to which the mask pattern 12 is not transferred is arranged on the first table 25. Next, on the second stage 26, the second photomask 11B is aligned at an appropriate position with respect to the substrate 10 (second exposure target region 14B) (step S4). The alignment action is the same as step S1 on the first table 25.

After the position of the second photomask 14B is aligned with the substrate 10, the exposure light 50 is irradiated, and the second mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26 (step S5). After the second mask pattern 17B is transferred onto the second exposure target region 14B on the second stage 26, the substrate 10 is conveyed by 1 pitch (step S6), and steps S1 to S6 are repeated until the predetermined number of times is reached. Thereafter, since the first exposure target region 14A to which the mask pattern 17A is transferred is always arranged on the second stage 26, the process of aligning the substrate 10 with the second photomask 11A (step S4) and transferring the second mask pattern 17B to the second exposure target region 14B (step S5) can be performed in parallel with steps S1 and S2 of the first stage 25.

The alignment mechanism 28 and the exposure light irradiation device 30 of the exposure apparatus 1 are independently disposed on the first table 25 and the second table 26, respectively. Thus, while the exposure apparatus 1 is continuously operated, the alignment of the first photomask (step S1) and the alignment of the second photomask (step S4) can be performed simultaneously. In addition, while the first mask pattern 17A is transferred onto the substrate 10 in the first stage 25 (step S2), it is also possible to align the second photomask on the second stage 26 (step S4), and to align the first photomask on the first stage 25 while the second mask pattern 17B is transferred onto the substrate 10 on the second stage 26 (step S5) (step S1).

The exposure apparatuses 1, 2, 3, 4, and 5 described above divide one of a plurality of

exposure target areas

14 and 22, which have photosensitive layers and are arranged in series in the transport direction of the substrate 10, into first

exposure target areas

14A and 22A and second

exposure target areas

14B and 22B by using

virtual dividing lines

15 and 23 of arbitrary shapes, and transfer

mask patterns

17A, 17B, 24A, and 24B onto the substrate 10 using the

first photomasks

11A and 20A corresponding to the first

exposure target areas

14A and 22A and the

second photomasks

11B and 20A corresponding to the second

exposure target areas

14B and 22B. The exposure apparatus 1 includes: a first stage 25 disposed upstream in the transport direction of the substrate 10 and supporting the

exposure target regions

14 and 22 on the substrate 10; a second stage 26 disposed downstream of the first stage 25 and supporting the

exposure target regions

14 and 22; and a substrate conveying mechanism 27 that conveys the

exposure target regions

14 and 22 from the first table 25 to the second table 22. Further, the exposure apparatus 1 further includes: an alignment mechanism 28 that aligns the relative positions of the first

exposure target regions

14A, 22A and the first photomask 11A and the relative positions of the second

exposure target regions

14B, 22B and the second photomask 11B on the first stage 25; and exposure

light irradiation mechanisms

30A, 30B, 35, 55A, 55B, 62 that irradiate light emitted from the light source 45 as exposure light 50 onto the

first photomasks

11A, 20A on the first work stage 25 and onto the

second photomasks

11B, 20B on the second work stage 26.

The exposure apparatuses 1, 2, 3, 4, and 5 divide the exposure target region 14 by the dividing line 15 in the width direction of the substrate 10, thereby shortening the length (distance) from the center of the

mask patterns

17A and 17B and transferring the mask patterns to the substrate 10 with high accuracy. Further, by dividing the exposure target region 22 in the longitudinal direction of the substrate 10 by the dividing line 23, the length of the first photomask 20A and the second photomask 20B in the substrate conveying direction is only about half of the length of the photomasks when batch exposure is performed when the same mask pattern is transferred to the substrate 10. Therefore, the costs of the first photomask 20A and the second photomask 20B can be significantly reduced.

The exposure apparatuses 1, 2, 3, 4, and 5 include alignment mechanisms 28 aligned with the first table 25 and the second table 26, respectively, and exposure

light irradiation mechanisms

30A, 30B, 35, 55A, 55B, and 62 capable of irradiating the first table 25 and the second table 26 with exposure light 50. Thus, while the first stage 25 performs pattern transfer, the second stages 26 can perform relative alignment between the

second photomasks

11B and 20A and the substrate 10. Similarly, while the pattern transfer is performed by the second stage 26, the relative alignment between the

first photomasks

11A, 20B and the substrate 10 can be performed on the first stage 25. Therefore, even if the divisional exposure system in which the pattern transfer is performed by two exposures is adopted, the same operation tact (or referred to as a cycle tact) as that of the conventional exposure apparatus of the batch exposure system in which the pattern transfer is performed at a time using a large-sized photomask can be obtained. The productivity can be improved if the takt time and the yield improvement accompanying the high precision of the transfer pattern are taken into consideration.

Therefore, according to the exposure apparatus 1 having such a configuration, the cost of the photomask can be reduced, and the

mask patterns

17A, 17B, 4A, and 24B can be transferred to the large-sized substrate 10 with high accuracy, and the productivity can be improved even in the case of the divisional exposure system.

In the example of the exposure object described in fig. 1 to 3, the exposure object region 14 is divided by the virtual dividing line 15 in the width direction of the substrate 10. The first photomask 11A is composed of a mask pattern 17A formed in the range of the first exposure target region 14A and a light-shielding region 19 formed in the second exposure target region 14B, and the second photomask 11B is composed of a mask pattern 17B formed in the range of the second exposure target region 14B and the first exposure target region 14A.

When a substrate is collectively exposed to light using one large-sized photomask, the positional deviation of the transfer pattern tends to increase in the center portion as the size increases on the outer peripheral side of the substrate. Alignment can be performed with a substrate conveyance amount (conveyance pitch) to some extent in the substrate conveyance direction, but it is difficult to correct positional deviation in the width direction. Therefore, by dividing the exposure target region 14 in the width direction of the substrate 10, the length (distance) from the center portion of the

mask patterns

17A and 17B is shortened, and thus the transfer onto the substrate 10 can be performed with high accuracy.

In the example illustrated in fig. 4 to 6, the exposure target region 22 is divided by the virtual dividing line 23 in the longitudinal direction of the substrate 10, the first photomask 20A has a planar size covering the first exposure target region 22A, and the second photomask 20B has a planar size covering the second exposure target region 22B.

Generally, a photomask becomes higher in cost as the planar size (area) becomes larger. By dividing the region 22 to be exposed into the first photomask 20A and the second photomask 20B in the longitudinal direction (the feeding direction) of the substrate 10, the areas of the first photomask 20A and the second photomask 20B are only about half of those of the region 22 to be exposed collectively. This can significantly reduce the cost of the first photomask 20A and the second photomask 20B compared to a photomask that is subjected to exposure in parallel.

The alignment mechanisms 28 are disposed on the first table 25 and the second table 26, respectively. One of the alignment mechanisms 28 has: a CCD camera 36 as a position detecting device for detecting the positions of the first

exposure object regions

14A and 22A and the

first photomasks

11A and 20A on the first table 25; and a photomask moving mechanism 28 that aligns the alignment of the first photomask 11A with the substrate 10 based on the detection result. The other alignment mechanism 28 has: a CCD camera 36 as a position detection device for detecting the positions of the second

exposure object regions

14B, 22B and the second photomask 11B on the second stage 26; and a photomask moving mechanism 34 for aligning the alignment of the

second photomasks

11B, 20B with the substrate 10 based on the detection result.

With this configuration, on the second stage 26, the

second photomasks

11B and 20B can be aligned with the substrate on which the

mask patterns

17A and 24A are transferred and exposed, and thus the

transfer patterns

12 and 21 can be formed without positional deviation.

The exposure apparatus 1 further includes a substrate intermediate support mechanism 33 disposed between the first stage 25 and the second stage 26. The first table 25, the substrate intermediate support mechanism 33, and the second table 26 are arranged in series. The substrate intermediate support mechanism 33 serves as a buffer for substrate transfer between the first table 25 and the second table 26. Since the substrate 10 is long, a positional shift may occur in a step before an exposure process. However, by providing the buffer on the substrate conveyance, it is possible to independently perform the relative alignment between the substrate 10 and the

first photomasks

11A, 20A on the first stage 25, and to independently perform the relative alignment between the substrate 10 and the

second photomasks

11B, 20B on the second stage.

The exposure light irradiation mechanism 30 includes

mirrors

47 and 48, the

mirrors

47 and 48 reflect light emitted from the light source 45 and irradiate the reflected light as the exposure light 50, and the exposure light irradiation mechanism 30 is provided above the first stage 25 and the second stage 26, respectively.

By adopting such a configuration, the irradiation of the exposure light 50 on the first stage 25 and the irradiation of the exposure light 50 on the second stage 26 can be performed independently. This makes it possible to control the operations of alignment, pattern transfer, and substrate conveyance on the first table 25 and the second table 26, respectively, to the shortest tact time.

Although the example in which the exposure device 1 divides the

exposure target regions

14 and 22 into two parts in the width direction or the longitudinal direction of the substrate 10 has been described, the division into three parts or four parts is also possible. For example, when the three stages are divided, the third stage may be connected to the first stage 25 and the second stage 26. The alignment mechanism, the exposure light irradiation mechanism, and the third photomask are disposed on the third stage, and the substrate intermediate support mechanism is disposed between the second stage 26 and the third stage.

The exposure apparatus 1 may be applied to collective exposure in which the exposure target region 14 is not divided. For example, if the alignment process and the pattern transfer process are simultaneously performed on the first table 25 and the second table 26 and the substrate 10 is conveyed by 2 pitches, the tact time can be about 1/2 of the tact time of the first embodiment.

[ second embodiment ]

The structure of the exposure apparatus 2 according to the second embodiment will be described below with reference to fig. 10. The exposure apparatus 2 is different from the above-described exposure apparatus 1 in that exposure

light irradiation mechanisms

30A and 30B corresponding to the first table 25 and the second table 26, respectively, are provided, and the exposure apparatus 2 irradiates the exposure light 50 by switching the optical path between the first table 25 side and the second table 26 side by the exposure light irradiation mechanism 35. In the present embodiment, a description will be given by taking an example in which the first photomask 11A and the second photomask 11B are used as photomasks as a representative example.

Fig. 10 is a front view of a schematic configuration of the exposure apparatus 2. The exposure apparatus 2 has the same configuration as the exposure apparatus 1 except for the exposure light irradiation mechanism 35, and therefore, the configuration and the operation of the exposure light irradiation mechanism 35 will be mainly described. In fig. 10, the same reference numerals as in fig. 7 are given to portions common to the exposure apparatus 1. The exposure apparatus 2 includes, on the main body side: a first table 25, a second table 26, a substrate conveyance mechanism 27, and an alignment mechanism 28. The light source 45 of the exposure light irradiation mechanism 35 is disposed above the middle position on the straight line connecting the first stage 25 and the second stage 26 and above the middle position in the Y direction.

The exposure light irradiation mechanism 35 includes: a light source 45, an optical path switching means 46 for switching the optical path between the direction of irradiating the first photomask 11A and the direction of irradiating the second photomask 11B with light emitted from the light source 45 as exposure light 50, and mirrors 47 and 48. The optical path switching unit 46 includes a mirror 49, a switching mechanism for switching an inclination angle of the mirror 49 with respect to the front surfaces of the first table 11A and the second table 11B, and a rotation mechanism for rotating the mirror 49 about the Z axis (both not shown).

When the exposure light 50 is irradiated to the first photomask 11A, the mirror 49 is controlled by the optical path switching unit 46 to the posture indicated by the mirror 49A (illustrated by a broken line). The light path of the light emitted from the light source 45 is switched to the light path 29A by the mirror 49A, and is irradiated onto the first photomask 11A as exposure light 50 through the mirror 47. In the case of irradiating the second photomask 11B with the exposure light 50, the mirror 49 is controlled by the optical path switching unit 46 to the posture indicated by the mirror 49B (illustrated as a solid line). The light path of the light emitted from the light source 45 is switched to the light path 29B by the mirror 49B, and is irradiated onto the second photomask 11B as exposure light 50 by the mirror 48. Exposure light 50 is perpendicularly irradiated on the front surfaces of the first photomask 11A and the second photomask 11B. As an optical system of the exposure light irradiation mechanism 35, a lens that converts the exposure light 50 into parallel light is disposed, but illustration and description thereof are omitted.

In addition, when the exposure light 50 is irradiated to the first exposure target region 14A or the exposure light 50 is irradiated to the second exposure target region 14B, the irradiation range can be controlled by the optical path switching unit 46. For example, by switching the inclination angles of the mirror 49, the first mirror 47, and the second mirror 48 with respect to the front surface of the first stage 11A or the second stage 11B, respectively, light can be condensed on the first exposure target region 14A or the second exposure target region 14B. Alternatively, the light source 45 having directivity may be used.

Next, an exposure method when the exposure apparatus 2 is used will be described with reference to a flowchart of the process shown in fig. 11 and fig. 1 to 3 and 10. In addition, an example using the first photomask 11A and the second photomask 11B described in fig. 1 to 3 will be described as a representative example.

Fig. 11 is a flow chart of main processes of an exposure method when the exposure apparatus 2 is used. Before the exposure apparatus 2 starts operating, the substrate 10 is set at a position where the CCD cameras 36 on the first table 25 and the second table 26 can detect the recognition marks 16. When the exposure device 2 starts operating, the mask pattern 12 is not transferred to both the first exposure object region 14A and the second exposure object region 14B. First, on the first stage 25, the first photomask 11A is aligned with the substrate 10 (at an appropriate position with respect to the first exposure target region 14A) (step S1). In this step, the CCD camera 36 detects the positional deviation of the recognition marks 16 and 18, and the photomask moving mechanism 34 is driven to align the position of the first photomask 11A with the substrate 10.

Next, the optical path switching unit 46 switches to the optical path 29A so that the exposure light 50 irradiates the first photomask 11A (step S2), and the mask pattern 17A is transferred to the first exposure object region 14A (step S3). After the pattern transfer, the substrate 10 is conveyed by 1 pitch by the substrate conveying mechanism 27 (step S4). Thereby, the exposure target region 14 to which the mask pattern 12A is transferred is sucked and held at a predetermined position on the second stage. The exposure target region 14 to which the mask pattern 12A is not transferred is arranged on the first table 25. Next, the position of the second photomask 11B is aligned to an appropriate position with respect to the substrate 10 (second exposure target region 14B) (step S5). This alignment operation is performed in the same operation as step S1 on the first table 25. The step of switching the optical path (step S2) may be performed at the same time as the first stage 25.

After the position of the second photomask 14B is aligned with the substrate 10, the optical path 29B is switched by the optical path switching unit 46 so that the exposure light 50 is irradiated onto the second photomask 11B (step S6), and the mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26 (step S7). After the pattern transfer, the substrate 10 is conveyed by the substrate conveyance mechanism 27 by 1 pitch (step S8), and the steps S1 to S8 are repeated until a predetermined number of transfers are reached. The optical path switching process (step S6) may be performed in parallel during a period from the conveyance process (step S4) of the substrate 10 to the end of the alignment process (step S5).

The alignment mechanisms 28 of the exposure apparatus 2 are independently disposed on the first table 25 and the second table 26, respectively. Thus, while the exposure apparatus 2 is continuously operated, the alignment of the first photomask 11A (step S1) and the alignment of the second photomask 11B (step S5) can be performed simultaneously. In addition, while the mask pattern 17A is transferred onto the substrate 10 (the first exposure target region 14A) in the first stage 25 (step S3), alignment with the substrate 10 (the second exposure target region 14B) and the second photomask 11B can be performed on the second stage 26 (step S5), and while the mask pattern 17B is transferred onto the substrate 10 (the second exposure target region 14B) on the second stage 26 (step S7), alignment between the substrate 10 (the first exposure target region 14A) and the first photomask 11A can be performed in the first stage 25 (step S1).

In the exposure apparatus 2 described above, the exposure light irradiation mechanism 35 includes: and an optical path switching means 46 disposed above an intermediate position between the first stage 25 and the second stage 26 and configured to switch the light emitted from the light source 45 to the first photomask 11A or the second photomask 11B and irradiate the same.

The exposure apparatus 2 has the same configuration as the exposure apparatus 1 except that the exposure apparatus 1 is provided with 2 sets of exposure light irradiation mechanisms 30 and 1 set of exposure light irradiation mechanisms 35. After the exposure light irradiation mechanism 35 irradiates the first photomask 11A with the exposure light 50 on the first table 25, the optical path is switched by the optical path switching unit 46 to irradiate the second photomask 11B with the exposure light 50 on the second table 26. After the exposure light 50 is irradiated on the second stage 26, the optical path is switched by the optical path switching unit 46 to irradiate the exposure light 50 to the first photomask 11A at the first stage. The exposure apparatus 2 can transfer the

mask patterns

17A and 17B onto the substrate by the single set of exposure light irradiation mechanisms 35, and can be simplified in structure by providing the exposure

light irradiation mechanisms

30A and 30B to the exposure apparatus 1.

In addition, the position alignment of first photomask 11A (step S1) and the position alignment of second photomask 11B (step S5) may be performed simultaneously. Further, while the first mask pattern 17A is transferred onto the substrate 10 on the first stage 25 (step S3), the second photomask 17B may be aligned on the second stage 26 (step S5), and while the second mask pattern 11B is transferred onto the substrate 10 on the second stage 26 (step S7), the first photomask 11A may be aligned on the first stage 25 (step S1), so that the tact time is not increased with respect to the exposure apparatus 1 although the operation of switching the optical path is performed by the exposure apparatus 2.

In the example of the exposure object described in fig. 1 to 3, the exposure object region 14 is divided in the width direction of the substrate 10, and the lengths of the

mask patterns

17A and 17B are shortened, whereby the mask pattern can be transferred onto the substrate 10 with high accuracy. In the example of the exposure object described in fig. 4 to 6, the planar size (area) of the first photomask 20A and the second photomask 20B is only about half of the planar size of the photomasks collectively exposing the exposure target region 22. This can significantly reduce the cost of the first photomask 20A and the second photomask 20B compared to a photomask that is subjected to exposure in parallel.

According to the exposure apparatus 2 described above, the cost of the

first photomasks

20A, 20B can be reduced, and the

mask patterns

17A, 17B or the

mask patterns

24A, 24B can be transferred onto the large-sized substrate 10 with high accuracy, and productivity can be improved even if the divisional exposure system is adopted.

[ third embodiment ]

Next, the structure of the exposure apparatus 3 according to the third embodiment will be described with reference to fig. 12 to 14. The exposure apparatus 3 is an apparatus in which the exposure apparatuses 1 are arranged in 2 rows in parallel, and

mask patterns

17A and 17B or mask patterns 24A and 4B are transferred onto the substrate 10 by exposure

light irradiation mechanisms

55A and 55B (see fig. 9). One of the two exposure lines is a first exposure line 60 and the other is a second exposure line 61. In the following description, an example using the

photomasks

11A and 11B will be described as a representative example.

Fig. 12 is a schematic plan view of the exposure apparatus 3, and fig. 13 is an explanatory diagram for explaining the structure and operation of the exposure light irradiation mechanism 55A on the first stage 25 side as viewed from the left side (thick arrow direction) of fig. 12. Fig. 14 is an explanatory diagram for explaining the structure and operation of the exposure light irradiation mechanism 55B on the second stage 26 side as viewed from the left side (thick arrow direction) of fig. 9. The first exposure line 60 and the second exposure line 61 have the same configuration as the exposure apparatus 1 except for the exposure

light irradiation mechanisms

30A and 30B, and therefore, detailed description is omitted, and portions common to the exposure apparatus 1 are described with the same reference numerals as those in fig. 7 and 8. The exposure device 3 includes a first exposure line 60, a second exposure line 61, and exposure

light irradiation mechanisms

55A, 55B.

The first exposure line 60 is provided with a substrate feed roller 31, a first table 25, a substrate intermediate support mechanism 33, a second table 26, and a substrate take-up roller 32 in series in this order from the upstream side to the downstream side in the conveyance direction (X-axis direction) of the substrate 10. An alignment mechanism 28 is disposed on each of the first table 25 and the second table 26. The alignment mechanism 28 is constituted by a photomask moving mechanism 34 and a CCD camera 36 as a position detecting device. The second exposure line 61 has the same structure as the first exposure line 60. Accordingly, the first photomask 11 of the first exposure line 60 and the second exposure line 61 are both disposed on the first stage 25, and the second photomask 11B is both disposed on the second stage 26.

In the following description, in order to distinguish the roles of the first exposure line 60 and the second exposure line 61, in the first exposure line 60, the first photomask 11A disposed on the first stage 25 is referred to as a first photomask 11Aa, and the second photomask 11B disposed on the second stage 26 is referred to as a second photomask 11B. In the second exposure line 61, the first photomask 11A disposed on the first stage 25 is referred to as a first photomask 11Ab, and the photomask 11B disposed on the second stage 26 is referred to as a second photomask 11 Bb.

An exposure light irradiation mechanism 55A is disposed at an intermediate position between the first stage 25 of the first exposure line 60 and the first stage 25 of the second exposure line 61. The exposure light irradiation mechanism 55B is disposed at an intermediate position between the second stage 26 of the first exposure line 60 and the second stage 26 of the second exposure line 61. The exposure light irradiation mechanism 55A and the exposure light irradiation mechanism 55B have the same configuration. The exposure light irradiation mechanism 55A on the first stage 25 side switches the inclination angle of the mirror 49 by the optical path switching unit 46, and irradiates the first photomask 11Aa after being reflected by the first mirror 47, and irradiates the first photomask 11Ab after being reflected by the second mirror 48. On the other hand, in the exposure light irradiation mechanism 55B on the second stage 26 side, the inclination angle of the mirror 49 is switched by the optical path switching unit 46, and the exposure light is reflected by the first mirror 47 and irradiated to the second photomask 11Ba, and the exposure light is reflected by the second mirror 48 and irradiated to the second photomask 11Bb, as in the first stage 25 side. The operation of the exposure light irradiation mechanism 55A will be described in detail with reference to fig. 13, and the operation of the exposure light irradiation mechanism 55B will be described in detail with reference to fig. 14.

As shown in fig. 13, the exposure light irradiation mechanism 55A includes, on the first stage 25 side: a light source 45; an optical path switching unit 46 that switches between a direction in which the light emitted from the light source 45 is irradiated as exposure light 50 to the first photomask 11Aa on the first exposure line 60 side and a direction in which the light is irradiated to the first photomask 11Ab on the second exposure line 61 side; and a first mirror 47 and a second mirror 48.

In the case of irradiating the exposure light 50 to the first photomask 11Aa on the first exposure light 60 side, the mirror 49 is switched to the posture indicated by the mirror 49A by the optical path switching unit 46. The light path of the light emitted from the light source 45 is switched to the light path 29A by the mirror 49A, reflected by the first mirror 47, and then irradiated onto the first photomask 11Aa as exposure light 50. When the exposure light 50 is irradiated to the first photomask 11Ab on the second exposure light 61 side, the mirror 49 is switched to the posture indicated by the mirror 49B by the optical path switching unit 46. The light path of the light emitted from the light source 45 is switched to the light path 29B by the mirror 49B, reflected by the mirror 48, and irradiated onto the first photomask 11Ab as exposure light 50. The exposure light 50 is irradiated perpendicularly to the front surfaces of the first photomasks 11Aa and 11 Ab.

As shown in fig. 14, the exposure light irradiation mechanism 55B includes, on the second stage 26 side: a light source 45; an optical path switching unit 46 that switches between a direction in which light emitted from the light source 45 is irradiated as exposure light 50 onto the second photomask 11Ba on the first exposure light 60 side and a direction in which light is irradiated onto the second photomask 11Bb on the second exposure light 61 side; and a first mirror 47 and a second mirror 48.

In the case of irradiating the exposure light 50 to the second photomask 11Ba on the first exposure light 60 side, the mirror 49 is switched to the posture indicated by the mirror 49A by the optical path switching unit 46. The light path of the light emitted from the light source 45 is switched to the optical path 29A by the mirror 49A, reflected by the first mirror 47, and irradiated as the exposure light 50 onto the second photomask 11 Ba. In the case of irradiating the exposure light 50 to the second photomask 11Bb on the second exposure light 61 side, the mirror 49 is switched to the posture indicated by the mirror 49B by the optical path switching unit 46. The light emitted from the light source 45 is switched to the optical path 29B by the mirror 49B, reflected by the mirror 48, and irradiated as the exposure light 50 onto the second photomask 11 Bb. The exposure light 50 is perpendicularly irradiated on the front surfaces of the second photomasks 11Ba, 11 Bb. Although lenses for converting the exposure light 50 into parallel light are disposed as the optical systems of the exposure

light irradiation mechanisms

55A and 55B, illustration and description thereof are omitted.

Next, an exposure method in the case of using the exposure apparatus 3 will be described with reference to a process flow chart shown in fig. 15 and with reference to fig. 9 to 11. The description will be given by taking the first photomask 11A and the second photomask 11B described with reference to fig. 1 to 3 as an example.

Fig. 15 is a flow chart of main processes of the exposure method when the exposure apparatus 3 is used. Before the exposure device 3 starts operating, the substrate 10 is set at a position where the CCD camera 36 on the first stage 25 and the second stage 26 can detect the recognition mark 16 on the first exposure line 60 and the second exposure line 61. It is assumed that neither the first exposure line 60 nor the second exposure line 61 transfers the mask pattern 12 to the exposure object region 14 at the time of starting the operation of the exposure device 3.

In fig. 15, the process flow shown on the left side is the process flow of the first exposure line 60, and the process flow shown on the right side is the process flow of the second exposure line 61. First, the position of the first photomask 11Aa is aligned with the substrate 10 (the first exposure target region 14A) on the first stage 25 of the first exposure line 60 (step S1), and the position of the first photomask 11Ab is aligned with the substrate 10 (the first exposure target region 14A) on the first stage 25 of the second exposure line 61 (step S2). Then, the optical path is switched to the optical path 29A by the optical path switching unit 46 so that the exposure light 50 irradiates the first photomask 11Aa (step S3). Note that, in the case where the exposure mechanism 55A is initially set in a state where the first photomask 11Aa is irradiated with the exposure light 50, step S3 is omitted. Next, the mask pattern 17A is transferred onto the first exposure target region 14A on the first stage 25 of the first exposure line 60 (step S4), and the optical path is switched to the optical path 29B by the optical path switching unit 46 so that the exposure line 50 is irradiated onto the first photomask 11Ab on the second exposure line 61 side (step S5).

In the first exposure line 60, after the mask pattern 17A is transferred onto the first exposure object region 14A on the first stage 25, the substrate 10 is conveyed by 1 pitch (step S6). Thereby, the exposure target region 14 to which the mask pattern 17A is transferred is arranged at a predetermined position of the second stage 26. The exposure target region 14 to which the

mask patterns

17A and 17B are not transferred is arranged on the first table 25.

In the second exposure line 61, after switching the optical path, the mask pattern 17A is transferred onto the first exposure object region 14A on the first stage 25 (step S7). In the first exposure line 60, after the substrate 10 is conveyed, the position of the second photomask 11Ba is aligned with the substrate 10 (second exposure object region 14B) on the second stage 26 (step S8). In the second exposure line 61, the substrate 10 to which the mask pattern 17A is transferred is conveyed by one pitch on the first stage 25 (step S9). Thereby, the exposure target region 14 to which the mask pattern 17A is transferred is arranged at a predetermined position of the second stage 26. The exposure target region 14 to which the

mask patterns

17A and 17B are not transferred is arranged on the first table 25.

In the first exposure line 60, the optical path is switched to the optical path 29A by the optical path switching unit 46 so that the exposure light 50 is irradiated onto the second photomask 11Ba (step S10), and the mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26 (step S11).

In the second exposure line 61, after the substrate 10 is conveyed, on the second stage 26, the position of the second photomask 11Bb is aligned with the substrate 10 (step S12), the optical path is switched by the optical path switching unit 46 so that the exposure light 50 irradiates the second photomask 11Bb (step S13), and on the second stage 26, the mask pattern 17B is transferred onto the second exposure object region 14B (step S14).

In the first exposure line 60, after the transfer of the mask pattern 17A by the second photomask 11Ba is completed, the substrate 10 is conveyed by 1 pitch (step S15). On the second exposure line 61, the substrate 10 is conveyed by 1 pitch after the transfer of the mask pattern 17A based on the second photomask 11Bb is also completed (step S16). The above steps S1 to S16 are repeated until the predetermined number of transfers is reached.

The exposure device 3 includes: a first exposure line 60, a second exposure line 61, and exposure

light irradiation mechanisms

55A, 55B. The first exposure line 60 and the second exposure line 61 have a first stage 25 and a second stage 26 connected in series, respectively, and the first stage 25 and the second stage 26 have alignment mechanisms 28 that can be independently driven. In the process flow shown in fig. 15, the first exposure line 60 and the second exposure line 61 are driven in synchronization, but before a predetermined mask pattern is transferred to the first exposure target region 14A or the second exposure target region 14B, the optical path is switched between the exposure light irradiation mechanism 55A or the exposure light irradiation mechanism 55B by the optical path switching unit 46 so that the first photomasks 11Aa and 11Ab and the second photomasks 11Ba and 11Bb, which are exposure targets, are irradiated with the exposure light. In this way, the timing of alignment of the substrate 10 with the photomasks 11Aa, 11Ab, 11Ba, and 11Bb, conveyance of the substrate 10, and the like can be freely set. In addition, the first exposure line 60 or the second exposure line 61 may be driven separately.

Further, for example, the step of switching the optical path by the exposure

light irradiation mechanisms

55A and 55B may be performed in the alignment step between the substrate 10 and each photomask or the conveyance step of the substrate 10. Thus, even if there are 4 target sites to which the exposure light 50 is applied and the exposure

light application mechanisms

55A and 55B are configured in two sets, the tact time can be reduced to the same level as that in the case where the exposure light is only 1 line.

The exposure apparatus 3 described above has the second exposure line 61 having the same configuration as the first exposure line 60 and arranged in parallel with the first exposure line 60, when the configuration including the first table 25, the second table 26, the substrate conveyance mechanism 27, the alignment mechanism 28, and the intermediate substrate support mechanism 33 is the first exposure line 60. The exposure light irradiation mechanism 35 is disposed above an intermediate position between the first stage 25 of the first exposure line 60 and the first stage 25 of the second exposure line 61, and above an intermediate position between the second stage 26 of the first exposure line 60 and the second stage 26 of the second exposure line 61. One exposure light irradiation mechanism 35A has an optical path switching unit 46 for switching the exposure light 50 to irradiate the first photomask 11Aa of the first exposure light 60 or the first photomask 11Ab of the second exposure light 61, and the other exposure light irradiation mechanism 35B has an optical path switching unit 46 for switching the exposure light 50 to irradiate the second photomask 11Ba of the first exposure light 60 or the second photomask 11Bb of the second exposure light 61.

The exposure apparatus 3 has the exposure light irradiation mechanism 30 removed from the exposure apparatus 1 as exposure light, one of the two exposure light beams is a first exposure light beam 60, and the other is a second exposure light beam 61, and is disposed in parallel to the Y direction, and two sets of exposure light irradiation mechanisms 35A and 35B are disposed. The exposure light irradiation mechanism 35 is different in arrangement position and attitude control from the exposure apparatus 2, but has the same configuration. The exposure apparatus 3 configured as described above divides the exposure target region 14 into two parts in the first exposure line 60 and the second exposure line 61, and performs exposure using the first photomasks 11Aa and 11Ab corresponding to one divided first exposure target region 14A and the second photomask 1114B corresponding to the other second exposure target region 14B, thereby forming a transfer pattern on the large-sized substrate 10. Therefore, by shortening the pattern length (distance) of the first photomask 11A and the second photomask 11B, the

mask patterns

17A and 17B can be transferred onto the substrate 10 with high accuracy.

The exposure target described in fig. 4 to 6 has an area of about half of the photomask that is collectively exposed to the exposure target region 22. This can significantly reduce the cost of the first photomask 20A and the second photomask 20B compared to a photomask that is subjected to exposure in parallel.

In the exposure apparatus 3, the exposure light 50 is irradiated with the first exposure light 60 and the second exposure light 61 after switching the optical path of the light emitted from the light source 45 before the step of transferring the mask pattern 17A on the first stage 25 to the first exposure target region 14A and before the step of transferring the mask pattern 17B on the second stage 26 to the second exposure target region 14B, respectively. The optical path switching operation may be performed in the process of aligning the positions of the first photomasks 11Aa and 11Ab with the substrate 10, the process of aligning the positions of the second photomasks 11Ba and 11Bb with the substrate 10, or in the middle of the substrate conveyance process. Therefore, the first exposure line 60 and the second exposure line 61 can transfer the

mask patterns

17A, 17B onto the substrate 10 at the same takt time as the above-described exposure apparatus 1, respectively, and the productivity can be raised to about 2 times with respect to the exposure apparatus 1.

As described above, according to the exposure apparatus 3, the costs of the first photomask 20A and the second photomask 20B can be reduced, and the

mask patterns

17A, 17B and the

mask patterns

24A, 24B can be transferred onto the large-sized substrate 10 with high accuracy, and productivity can be improved even if the divisional exposure system is employed.

[ fourth embodiment ]

Next, the structure of the exposure apparatus 4 according to the fourth embodiment will be described with reference to fig. 16 to 18. The exposure apparatus 3 is provided with exposure

light irradiation mechanisms

55A and 55B, and switches the light path in two directions by the light path switching unit 46, thereby transferring the

mask patterns

17A and 17B or the

mask patterns

24A and 24B onto the substrate 10. The exposure apparatus 4 switches the optical path to 4 directions of the stages of the first exposure line 60 and the second exposure line 61 by a set of exposure line irradiation mechanisms 62 (see fig. 16), and then transfers the

mask patterns

17A and 17B or the

mask patterns

24A and 24B onto the substrate 10. In the following description, an example using the

photomasks

11A and 11B will be described as a representative example.

Fig. 16 is a schematic configuration plan view of the exposure apparatus 4. The exposure device 4 includes: a first exposure line 60, a second exposure line 61, and an exposure light irradiation mechanism 62. The first exposure line 60 and the second exposure line 51 have the same configuration as the exposure apparatus 3 except for the exposure light irradiation mechanism 62, and therefore, detailed description thereof is omitted, and the same reference numerals as those in fig. 12 are given to common portions. The first exposure line 60 is connected in series from the upstream side to the downstream side in the conveyance direction of the substrate 10 in the order of the substrate feed roller 31, the first table 25, the substrate intermediate support mechanism 33, the second table 26, and the substrate take-up roller 32. Alignment mechanisms 28 are disposed on the first table 25 and the second table 26, respectively. The alignment mechanism 28 is constituted by a photomask moving mechanism 34 and a CCD camera 36 as a position detecting device. The second exposure line 61 has the same structure as the first exposure line 60 described above.

In the following description, in order to distinguish the roles of the first exposure line 60 and the second exposure line 61, in the first exposure line 60, the first photomask 11A disposed on the first stage 25 is referred to as a first photomask 11Aa, and the second photomask 11B disposed on the second stage 26 is referred to as a second photomask 11 Ba. In the second exposure line 61, the first photomask 11A disposed on the first stage 25 is referred to as a first photomask 11Ab, and the photomask 11B disposed on the second stage 26 is referred to as a second photomask 11 Bb.

The exposure light irradiation mechanism 62 is composed of a light source 45, an optical path switching unit 63, and various mirrors 64 to 68. The light source 45 is disposed at an intermediate position between the first exposure line 60 and the second exposure line 61 arranged in parallel in plane, and at an intermediate position between the first photomask 11Aa and the second photomask 11Bb, and an intermediate position between the first photomask 11Ab and the second photomask 11 Bb. The third mirror 64 disposed on the first photomask 11Aa and the fourth mirror 65 disposed on the second photomask 11Ba are provided on the first exposure line 60 side, and the fifth mirror 66 disposed on the first photomask 11Ab and the fourth mirror 67 disposed on the second photomask 11Bb are provided on the second exposure line 61 side.

The optical path switching unit 63 switches the mirror 68 to face the first stage 25 side or the second stage 26 side of the first exposure line 60, and further switches the mirror 68 to face the first stage 25 side or the second stage 26 side of the second exposure line 61. That is, the optical path switching member 63 switches the mirror 68 to a state of optically opposing the third mirror 64, the fourth mirror 65, the fifth mirror 66, and the sixth mirror 67.

Fig. 17 is an explanatory diagram illustrating the structure and operation of the exposure light irradiation mechanism 62, and shows a state where the exposure light 50 is irradiated to the first exposure light 60 side. Fig. 17 is a view seen from the arrow direction of the thick solid line shown in fig. 16, and shows a state where the first exposure light 60 irradiates the first photomask 11Aa or the second photomask 11Ba with the exposure light 50. When the exposure light 50 is irradiated to the first photomask 11Aa on the first exposure light 60 side, the mirror 68 is switched by the optical path switching unit 63 to the posture optically opposed to the third mirror 64 indicated by the mirror 68A. Light emitted from the light source 45 is switched to the optical path 69A by the mirror 68A, reflected by the third mirror 64, and irradiated onto the first photomask 11Aa as exposure light 50.

When the exposure light 50 is irradiated to the second photomask 11Ba, the mirror 68 is rotated about the Z axis by a rotation mechanism not shown, and then switched to an attitude such that the mirror 68B optically faces the fourth mirror 65. The light emitted from the light source 45 is switched to the optical path 69B by the mirror 68B, reflected by the fourth mirror 65, and irradiated onto the second photomask 11Ba as the exposure light 50.

Fig. 18 is an explanatory diagram of the structure and operation of the exposure light irradiation mechanism 62, and shows a state where the exposure light 50 is irradiated to the second exposure light 61 side. Fig. 18 is a state when the first photomask 11Ab or the second photomask 11Bb is irradiated with the exposure light 50 on the second exposure light 61 as viewed from the direction of the arrow of the thick broken line shown in fig. 16. When the exposure light 50 is irradiated to the first photomask 11Ab on the second exposure light 61 side, the mirror 68 is rotated by the optical path switching means 63 from the posture of the mirror 68A in the direction indicated by the mirror 68C optically facing the fifth mirror 66 with the optical axis of the optical path 69A (see fig. 16) as the rotation axis. Light emitted from light source 45 is switched to optical path 69C by mirror 68C, reflected by fifth mirror 66, and irradiated onto first photomask 11Ab as exposure light 50.

When the exposure light 50 is irradiated to the second photomask 11Bb, the mirror 68 is rotated by the optical path switching means 63 from the posture of the mirror 68B in the direction indicated by the mirror 68D optically opposed to the sixth mirror 67 with the optical axis of the optical path 69A (see fig. 16) as the rotation axis. The light emitted from the light source 45 is switched to the optical path 69D by the fourth mirror 68C, reflected by the fourth mirror 66, and irradiated onto the second photomask 11Bb as the exposure light 50.

Next, an exposure method using the exposure apparatus 4 will be described with reference to a process flow chart shown in fig. 19 and with reference to fig. 16 to 18. The description will be given by taking the first photomask 11A and the second photomask 11B described with reference to fig. 1 to 3 as an example.

Fig. 19 is a flow chart of main processes of the exposure method when the exposure apparatus 4 is used. Before the exposure device 4 starts operating, the substrate 10 is set on the first exposure line 60 and the second exposure line 61 and the CCD cameras 36 located on the first table 25 and the second table 26 can detect the positions of the recognition marks 16, 18. It is assumed that the

mask patterns

17A, 17B of the first exposure object region 14A and the second exposure object region 14B are not transferred onto the first exposure line 60 and the second exposure line 61 at the time of starting the operation of the exposure device 3.

In fig. 19, the process flow shown on the left side is the process flow of the first exposure line 60, and the process flow shown on the right side is the process flow of the second exposure line 61. First, the position of the first photomask 11Aa is aligned with the substrate 10 (the first exposure target region 14A) on the first table 25 of the first exposure line 60 (step S1), and the position of the first photomask 11Aa is aligned with the substrate 10 (the first exposure target region 14A) on the first table 25 of the second exposure line 61 (step S2). Then, the optical path is switched to the optical path 69A by the optical path switching unit 63 so that the exposure light 50 irradiates the first photomask 11Aa (step S3). Note that in the case where the initial setting of the exposure mechanism 62 is a state where the first photomask 11Aa is irradiated with the exposure light 50, step S3 is omitted. Next, the mask pattern 17A is transferred onto the first exposure target region 14A on the first stage 25 of the first exposure line 60 (step S4), and the optical path is switched to the optical path 69B by the optical path switching unit 63 so that the exposure line 50 is irradiated onto the first photomask 11Ab of the second exposure line 61 (step S5).

mask patterns

17A and 17B are not transferred is arranged on the first table 25.

In the second exposure line 61, after switching the optical path, the mask pattern 17A is transferred onto the first exposure object region 14A on the first stage 25 (step S7). In the first exposure line 60, after the substrate 10 is conveyed, the position of the second photomask 11Ba is aligned with the substrate 10 on the second table 26 (second exposure corresponding region 14B) (step S8). In the second exposure line 61, the substrate 10 to which the mask pattern 17A is transferred is conveyed by one pitch on the first stage 25 (step S9). Thereby, the exposure target region 14 to which the mask pattern 17A is transferred is arranged at a predetermined position of the second stage 26. The exposure target region 14 to which the

mask patterns

17A and 17B are not transferred is arranged on the first table 25.

On the first exposure line 60, the optical path is switched to the optical path 69C by the optical path switching unit 63 so that the exposure light 50 is irradiated onto the second photomask 11Ba (step S10), and the mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26 (step S11).

On the second exposure line 61, after the substrate 10 is conveyed, the position of the second photomask 11Bb is aligned to the substrate 10 (the second exposure object region 14B) on the second stage 26 (step S12), the exposure light 50 is irradiated onto the second photomask 11Bb by the optical path switching unit 63 (step S13), and the mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26 (step S14).

In the first exposure line 60, after the transfer of the mask pattern 17A by the second photomask 11Ba is completed, the substrate 10 is conveyed by 1 pitch (step S15). On the second exposure line 61, the substrate 10 is conveyed by 1 pitch after the transfer of the mask pattern 17A based on the second photomask 11Bb is also completed (step S16). The above-described steps 1 to 16 are repeated until the predetermined number of transfers is reached.

In the process flow shown in fig. 19, an example in which the first exposure line 60 and the second exposure line 61 are driven in synchronization is shown. However, before transferring a predetermined mask pattern to the first exposure target region 14A or the second exposure target region 14B, the optical path is switched by the optical path switching unit 63 so that the exposure light 50 is irradiated to the first photomasks 11Aa and 11Ab and the second photomasks 11Ba and 11Bb, respectively, which are exposure targets. This allows the timing of alignment between the substrate 10 and the photomasks 11Aa, 11Ab, 11Ba, and 11Bb, and the timing of conveyance of the substrate 10, etc., to be set freely. In addition, the first exposure line 60 or the second exposure line 61 may be driven separately.

Further, for example, the step of switching the optical path by the exposure light irradiation mechanism 62 may be performed in the alignment of the substrate 10 with each photomask or in the step of conveying the substrate 10. Thus, even if the exposure light irradiation mechanism 62 has 1 set of 4 target positions to be irradiated with the exposure light 50, the exposure light can be shortened to the same tact as in the case of 1 line (the exposure apparatus 1 or the exposure apparatus 2).

When the exposure apparatus 4 described above has the structure of the mechanism including the first stage 25, the second stage, the substrate transfer mechanism 27, the alignment mechanism 28, and the intermediate substrate support mechanism 33 as the first exposure line 60, the exposure apparatus has the second exposure line 61 having the same structure as the first exposure line 60 and arranged in parallel with the first exposure line 60. The exposure light irradiation mechanism 62 is disposed above the center portions of the first exposure light 60 and the second exposure light 61 in the plane direction, and includes an optical path switching unit 63 that switches and irradiates the exposure light 50 to the first photomask 11Aa of the first exposure light 60, the second photomask 11Ba, and the first photomask 11Ab of the second exposure light 61, and the second photomask 11Bb, respectively.

The exposure apparatus 4 divides the exposure target region 14 into two parts in the first exposure line 60 and the second exposure line 61, respectively, and performs exposure using the first photomasks 11Aa and 11Ab corresponding to the divided one first exposure target region 14A and the second photomasks 11Ba and 11Bb corresponding to the other second exposure target region 14B, thereby transferring the

mask patterns

17A and 17B onto the large-sized substrate 10. Therefore, by shortening the pattern lengths of the first photomasks 11Aa and 11Ab and the second photomasks 11Ba and 11Bb, the

mask patterns

17A and 17B can be transferred onto the substrate 10 with high accuracy.

In the example of the exposure object described in fig. 4 to 6, the areas of the first photomask 20A and the second photomask 20B are about half of those of the photomasks collectively exposed to the exposure object region 22. This can significantly reduce the cost of the first photomask 20A and the second photomask 20B compared to a photomask subjected to the batch exposure.

The exposure apparatus 4 switches the optical paths in 4 directions of the stages of the first exposure line 60 and the second exposure line 61 by the one set of exposure line irradiation mechanism 62, and transfers the

mask patterns

17A and 17B onto the substrate 10. The exposure light irradiation mechanism 62 switches the optical path of the light emitted from the light source 45 by the optical path switching unit 63, and irradiates the light as the exposure light 50 onto the first photomask 11Aa, the second photomask 11Ba on the first exposure line 60 side, the first photomask 11Ab and the second photomask 11Bb on the second exposure line 61 side. The optical path switching operation may be performed during the step of aligning the first photomasks 11Aa and 11Ab with the substrate 10 (the first exposure target region 14A), the step of aligning the second photomasks 11Ba and 11Bb with the substrate 10 (the second exposure target region 14B), or the step of transferring the substrate. Therefore, even with the configuration of one set of exposure light irradiation mechanism, the first exposure light 60 and the second exposure light 61 can transfer the

mask patterns

17A, 17B onto the substrate 10 at the same tact time as the above-described exposure apparatus 1, respectively.

As described above, according to the exposure apparatus 4, the cost of the

first photomasks

20A, 20B can be reduced, and the

mask patterns

17A, 17B or the

mask patterns

[ fifth embodiment ] A

Next, the structure of the exposure apparatus 5 according to the fifth embodiment will be described with reference to fig. 17. The exposure apparatuses 1 to 4 transfer the

mask patterns

17A and 17B or the

mask patterns

24A and 24B to one surface (front surface) of the substrate 10, and the exposure apparatus 5 transfers the mask patterns to both the front and back surfaces of the substrate 10, so the exposure apparatus 5 is called a double-sided exposure apparatus. The technical idea of the exposure device 5 is as follows: the exposure apparatuses 1 to 4 can be applied to both the front and back surfaces of the substrate 10. Next, an example of application to the exposure apparatus 1 will be described using examples using the

photomasks

11A and 11B as representative examples.

Fig. 20 is a schematic front view of the exposure apparatus 5. The exposure device 5 irradiates exposure light 50 from the front and back surfaces, thereby transferring a mask pattern onto the long substrate 10 having photosensitive layers formed on the front and back surfaces thereof. Although the exposure apparatus 5 can transfer different mask patterns to the front surface side and the back surface side of the substrate 10, the same mask pattern is transferred to both the front surface and the back surface. In this example, the mask pattern 17A is transferred to one of the first exposure target regions 14A divided into two parts using the photomask 11A on both the front and back surfaces of the substrate 10, and the mask pattern 17B is transferred to the other second exposure target region 14B using the photomask 11B.

The exposure apparatus 5 includes a first stage 25 disposed on an upstream side in a transport direction (from a left side to a right side in the figure) of the substrate 10 and a second stage 26 disposed on a downstream side, and is provided with a through hole 73 through which the exposure light 50 irradiated from the back sides of the first stage 25 and the second stage 26 passes, and suction holes, not shown, for vacuum-sucking the substrate 10 are provided around the through hole 73.

The exposure apparatus 5 has a common substrate conveyance mechanism 27 on both front and back surfaces. Above the substrate 10, there are provided: an alignment mechanism 28 for determining the position between the substrate 10 and the first photomask 11A and the position between the substrate 10 and the second photomask 11B, which have the same configuration as the exposure apparatus 1, an exposure light irradiation mechanism 30A for irradiating the first photomask 11A on the first table 25 with exposure light 50, and an exposure light irradiation mechanism 30B for irradiating the second photomask 11B on the second table 26 with exposure light 50. The structure on the front side is referred to as a front side exposure line.

On the back surface side of the substrate 10, an alignment mechanism 28 and exposure

light irradiation mechanisms

30A and 30B are disposed so as to face the front surface side exposure mechanism line with the substrate 10 interposed therebetween. The structure of the back side is referred to as a back side exposure line. Each of the alignment mechanism 28 and the exposure

light irradiation mechanisms

30A and 30B is configured to be independently drivable.

The front side exposure mechanism line and the back side exposure mechanism line have a common first stage 25, second stage 26, alignment mechanism 28, and exposure

light irradiation mechanisms

30A and 30B, respectively. The substrate transfer mechanism 27, the first table 25, the second table 26, the alignment mechanism 28, and the exposure

light irradiation mechanisms

30A and 30B are the same in structure and function as the exposure apparatus 1, and therefore, detailed description thereof is omitted. In the exposure apparatuses 1 to 4, the through holes 73 may be provided in the first table 25 and the second table 26.

Next, an exposure method in the case of using the exposure apparatus 5 will be described with reference to a process flow chart shown in fig. 21 and with reference to fig. 21.

Fig. 21 is a flow chart of main processes of the exposure method when the exposure apparatus 5 is used. Before the exposure device 5 starts operating, the CCD cameras 36 as position detection devices that set the substrate 10 on the first table 25 and the second table 26 can detect the positions of the recognition marks 16, 18. The identification marks 16 are provided at the same positions on both the front and back surfaces of the substrate 10. It is assumed that neither of the

mask patterns

17A, 17B is transferred to the front side or the back side of the substrate 10 at the start of the operation of the exposure apparatus 3.

In fig. 20, the process flow shown on the left side is for front side exposure and the process flow shown on the right side is for back side exposure. First, in the front-side exposure line and the back-side exposure line, the position of the first photomask 11A is aligned with the substrate 10 (first exposure object region 14A) by the first stage 25 (step S1), the exposure light 50 is irradiated from the exposure light irradiation mechanism 30A to transfer the mask pattern 17A onto the first exposure object region 14A (step S2), and the substrate 10 is conveyed by the substrate conveyance mechanism 27 by 1 pitch (step S3). Thereby, the exposure target region 14 to which the mask pattern 17A is transferred is conveyed to a predetermined position of the second stage 26. The exposure target region 14 to which the

mask patterns

17A and 17B are not transferred is arranged on the first table 25.

Next, the position of the second photomask 11B is aligned with the substrate 10 (the second exposure target region 14B) (step S4), the exposure light 50 is irradiated from the exposure light irradiation mechanism 30B, and the second mask pattern 17B is transferred to the second exposure target region 14B (step S5). After the second mask pattern 17B is transferred onto the second exposure object region 14B on the second stage 26, the substrate 10 is conveyed by 1 pitch (step S6). Then, step S1 step S6 is repeated until the prescribed number of transfers is reached.

In this example, the substrate transfer step (steps S3 and S6) is a step common to the front-side exposure line and the back-side exposure line, and the motion quality inspection points of the other alignment steps (steps S1 and S4) and the mask pattern transfer step (steps S2 and S5) do not necessarily coincide with the front-side exposure line and the back-side exposure line, provided that the time point of the substrate transfer step is avoided.

The exposure apparatus 5 is applied with the configuration and operation of the exposure apparatus 1 described above, but the configurations and operations of the exposure apparatuses 2 to 4 may be applied. When applied to the exposure apparatus 2, the exposure light irradiation mechanisms 35A and 35B for irradiating the first photomask 11A or the second photomask 11B with the exposure light 50 switched on the optical path may be attached to the front-side exposure light and the back-side exposure light. In the exposure apparatus 3, the exposure light 50 may be provided on both the front-side exposure light and the back-side exposure light in the first exposure light 60 and the second exposure light 61, and the exposure

light irradiation mechanisms

55A, 55B may irradiate the first photomasks 11Aa, 11Ab or the second photomasks 11Ba, 11Bb with the optical paths switched. In the exposure apparatus 4, the exposure light irradiation mechanism 62 for irradiating the first photomasks 11Aa and 11Ab or the second photomasks 11Ba and 11Bb with the exposure light 50 so as to switch the optical paths may be attached to the front-side exposure light and the back-side exposure light.

The exposure apparatus 5 described above has the photosensitive layers on both the front and back surfaces of the substrate 10, and the first photomask 11A, the second photomask 11B, the alignment mechanism 28, and the exposure

light irradiation mechanisms

30A and 30B disposed on the front surface side of the substrate 10 are disposed to face the first photomask 11A, the second photomask 11B, the alignment mechanism 28, and the exposure light irradiation mechanism 30A disposed on the back surface side of the substrate 10 with the first stage 25 and the second stage 26 interposed therebetween, and the first stage 25 and the second stage 26 are provided with through holes 73 through which the exposure light 50 can be irradiated onto the back surface of the substrate 10.

The exposure apparatus 5 irradiates exposure light 50 from both front and back surfaces of a long substrate 10 having photosensitive layers formed on both front and back surfaces thereof, and transfers

mask patterns

17A and 17B to both front and back surfaces. The exposure device 5 divides an exposure target region into two parts by a front side exposure line and a back side exposure line, respectively, and performs exposure using a first photomask 11A corresponding to one divided first exposure target region 14A and a second photomask 11B corresponding to the other second exposure target region 14B, and transfers the exposure results onto the large-sized substrate 10. Therefore, by shortening the pattern length of the first photomask 11A and the second photomask 11B, the

mask patterns

17A and 17B can be transferred onto the substrate 10 with high accuracy.

In the example of the exposure object described in fig. 4 to 6, the areas of the first photomask 20A and the second photomask 20B are about half of those of the photomasks collectively exposing the exposure object region 22. This can significantly reduce the cost of the first photomask 20A and the second photomask 20B compared to a photomask subjected to the batch exposure.

Further, since the front-side exposure line and the back-side exposure line of the exposure apparatus 5 have the same configuration, the operation of aligning the first photomask 11A and the second photomask 11B with respect to the substrate 10, the operation of transferring the mask pattern 17A, and the operation of transferring the mask pattern 17B can be simultaneously performed on both the front and back surfaces of the substrate 10. Even if the mask patterns are transferred to both the front and back surfaces of the substrate 10, the tact can be suppressed to the same level as when only one surface is transferred.

As described above, according to the exposure apparatus 5, the cost of the

first photomasks

20A and 20B can be reduced, and the

mask patterns

17A and 17B or the

mask patterns

24A and 24B can be transferred to the large-sized substrate 10 with high accuracy, and the productivity can be improved even when the divided exposure is performed by the front-back both-side exposure.

[ notation ] to show

1. 2, 3, 4, 5 … exposure devices; 10 … a substrate; 11 … photo mask; 11A, 11Aa, 11Ab, 20a … first photomask; 11B, 11Ba, 11Bb, 20B … second photomask; 12. 12A, 12B, 21A, 21B …; 14. 22 … exposing the object region; 14A, 22a … first exposure object region; 14B, 22B … second exposure object region; 15. 23 … dividing line; 16. 16A, 18a … identifying the marker; 17A, 17B, 24A, 24B … mask pattern; 19 … light-blocking areas; 25 … a first stage; 26 … second table; 27 … a substrate conveying mechanism; 28 … alignment mechanism; 29A, 29B, 69A, 69B, 69C, 69D … optical paths; 30A, 30B, 35, 55A, 55B, 62 … exposure light irradiation means; 33 … substrate intermediate support mechanism; 34 … photomask moving mechanism; 36 … CCD camera (position detection device); a 45 … light source; 46. 63 … an optical path switching unit; 47 … first mirror; 48 … second mirror; 49. 68 … mirror; 64 … third mirror; 65 … fourth mirror; 66 … fifth mirror; 67 … sixth mirror; 50 … exposure light; 60 … first exposure line; 61 … second exposure line; 73 … through holes.

Claims

1. An exposure apparatus for dividing one of a plurality of exposure target regions, which have a photosensitive layer and are arranged in series in a transport direction of a long substrate, into a first exposure target region and a second exposure target region by a virtual dividing line of an arbitrary shape, and transferring a mask pattern onto the substrate using a first photomask corresponding to the first exposure target region and a second photomask corresponding to the second exposure target region, the exposure apparatus comprising:

a first stage arranged upstream in a transport direction of the substrate and supporting the exposure target region of the substrate;

a second stage disposed downstream of the first stage and supporting the exposure target region; a substrate transfer mechanism that transfers the exposure target region from the first stage to the second stage;

"an alignment mechanism that aligns the alignment between the first exposure object region and the first photomask on the first stage" and "an alignment mechanism that aligns the alignment between the second exposure object region and the second photomask on the second stage"; and

and an exposure light irradiation mechanism configured to irradiate the first photomask on the first stage and the second photomask on the second stage with light emitted from a light source as exposure light.

2. The exposure apparatus according to claim 1, characterized in that:

wherein the exposure target region is divided by the virtual dividing line in a width direction of the substrate,

the first photomask is composed of a mask pattern formed in the range of a first exposure object region and a light-shielding region formed in a second exposure object region,

the second photomask is composed of a mask pattern formed in the range of the second exposure target region and a light-shielding region formed in the first exposure target region.

3. The exposure apparatus according to claim 1, characterized in that:

wherein the exposure target region is divided by the virtual dividing line in a longitudinal direction of the substrate,

the first photomask has a planar size covering the first exposure object area, and the second photomask has a planar size covering the second exposure object area.

4. The exposure apparatus according to claim 1, characterized in that:

wherein the alignment mechanisms are respectively configured as the first table and the second table,

one of the alignment mechanisms has: position detection means for detecting positions of the first exposure object region and the first photomask; and a photomask moving mechanism that aligns a position of the first photomask with the first exposure object region based on a detection result,

another one of the alignment mechanisms has: position detection means for detecting positions of the second exposure target region and the second photomask; and a photomask moving mechanism that aligns a position of the second photomask with the second exposure target region based on the detection result.

5. The exposure apparatus according to claim 1, characterized by further comprising:

and a substrate intermediate support mechanism disposed between the first stage and the second stage.

6. The exposure apparatus according to any one of claims 1 to 5, characterized in that:

wherein the exposure light irradiation mechanism has the light source and a mirror that reflects the light emitted from the light source and irradiates the first photomask or the second photomask as the exposure light,

the exposure light irradiation mechanism is disposed above the first stage and the second stage, respectively.

7. The exposure apparatus according to any one of claims 1 to 5, characterized in that:

wherein the exposure light irradiation mechanism further has: and an optical path switching unit disposed above an intermediate position between the first stage and the second stage, the optical path switching unit configured to switch the light beam emitted from the light source to be irradiated to the first photomask or the second photomask.

8. The exposure apparatus according to any one of claims 1 to 5, characterized in that:

wherein, when a mechanism structure composed of the first table, the second table, the substrate conveying mechanism, the alignment mechanism, and the intermediate substrate supporting mechanism is used as a first exposure line,

the exposure apparatus further has: a second exposure line which is the same as the first exposure line structure and is arranged in parallel with the first exposure line,

the exposure light irradiation mechanism is disposed in: above the middle positions of the first table of the first exposure line and the first table of the second exposure line, and above the middle positions of the second table of the first exposure line and the second table of the second exposure line,

one of the exposure light irradiation mechanisms has: an optical path switching unit that switches the first photomask of the first exposure line or the first photomask of the second exposure line to which exposure light is irradiated,

the other exposure light irradiation mechanism includes: and an optical path switching unit that switches the second photomask in which the exposure light irradiates the first exposure light or the second photomask in which the exposure light irradiates the second exposure light.

9. The exposure apparatus according to any one of claims 1 to 5, characterized in that:

the exposure device further has a second exposure line arranged in parallel with the first exposure line,

the exposure light irradiation mechanism includes: and an optical path switching unit that is disposed above a center portion in a plane direction of the first exposure line and the second exposure line, and switches between the first photomask and the second photomask for which the first exposure line is irradiated with the exposure light, and the first photomask and the second photomask for which the second exposure line is irradiated with the exposure light.

10. The exposure apparatus according to claim 1, characterized in that:

wherein, the front and back sides of the substrate are provided with photosensitive layers,

the first photomask, the second photomask, the alignment mechanism, and the exposure light irradiation mechanism disposed on the front surface side of the substrate are disposed to face the first photomask, the second photomask, the alignment mechanism, and the exposure light irradiation mechanism disposed on the back surface side of the substrate with the first stage and the second stage interposed therebetween,

and through holes for the exposure light to irradiate the back surface of the substrate are formed in the first workbench and the second workbench.