JP4390512B2 - Exposure method and substrate alignment method used in the method - Google Patents

Description

  The present invention relates to an exposure apparatus used for manufacturing a product such as a color filter, and in particular, sequentially exposes a plurality of shots at different exposure positions in a horizontal plane on a single substrate with a photosensitive material. The present invention relates to an exposure method for forming a plurality of patterns on the substrate and a substrate alignment method used in the method.

  A manufacturing process for manufacturing a product such as a color filter mainly includes a BM layer forming process for forming a pattern of a black matrix layer (hereinafter also referred to as “BM layer”) on the substrate, and a pattern of the BM layer formed on the substrate. And a colored layer forming step of forming a colored layer of a pattern of each color (R, G, and B) in accordance with.

  In such a manufacturing process, an exposure apparatus is generally used as an apparatus for forming a BM layer pattern and a colored layer pattern in both the BM layer forming process and the colored layer forming process. Further, as such an exposure apparatus, a proxy that forms a pattern on a substrate by performing one-shot collective exposure while maintaining a predetermined gap between a photomask and a substrate with a photosensitive material to be exposed. A Mitty exposure apparatus is generally used.

  The basic procedure for forming the BM layer pattern and the colored layer pattern by such a proximity exposure apparatus is the same in both the BM layer forming step and the colored layer forming step. With respect to a method (alignment method) for relatively moving the substrate and positioning the substrate at the exposure position, a different method is often used in each step.

  That is, in the BM layer forming step, after the entire substrate is aligned by a so-called global alignment method, the substrate is generally positioned at an exposure position by moving the substrate by a predetermined amount. On the other hand, in the colored layer forming step, the alignment mark provided on the photomask and the alignment mark provided in association with the pattern of the BM layer of the substrate are aligned to position the substrate at the exposure position. Is common.

  In addition, the alignment method is different in each of the BM layer forming step and the colored layer forming step in this way because the global alignment method is used compared to the exposure apparatus that positions the substrate by the method using the alignment mark. This is because the exposure apparatus for positioning the substrate is generally more expensive, and the colored layer forming step capable of relatively positioning the substrate in relation to the pattern of the BM layer formed in advance. Then, it is because it is preferable to position a board | substrate with the cheap exposure apparatus based on the method using an alignment mark.

  By the way, in recent years, products such as color filters to be manufactured have become very large, and accordingly, the pattern of the BM layer and the pattern of the colored layer to be exposed on the substrate are also large areas. Yes.

  In such a situation, when the proximity exposure apparatus described above is used, it is possible to increase the pattern of the BM layer and the pattern of the colored layer by enlarging the photomask itself, The production of a large photomask is technically and economically difficult, and it is practically very difficult to produce a photomask of a certain size or larger.

  For this reason, conventionally, a photomask is prepared in which the size of the pattern area for exposure is 1 / n (n is a positive integer) of the entire large-area pattern, and the reference direction (for example, Y direction) is prepared. A method has been proposed in which n shots are sequentially exposed to the substrate while sequentially moving the position of the substrate with respect to the photomask, thereby forming n patterns that form a large area pattern by being connected to each other. (See Patent Document 1).

  By the way, the method described in Patent Document 1 is not limited to an exposure apparatus for a BM layer forming process that positions a substrate by a global alignment technique, but a colored layer forming process that positions a substrate by a technique using an alignment mark. It is also used in a conventional exposure apparatus. Here, in the latter exposure apparatus, while sequentially moving the position of the substrate with respect to the photomask, the alignment mark provided on the photomask and the alignment mark provided in association with each pattern of the BM layer of the substrate are used. By matching, the substrate is positioned at each of the plurality of exposure positions.

  However, in the exposure apparatus for the colored layer forming process as described above, the arrangement mode of the alignment mark on the photomask is fixedly determined in advance for each exposure apparatus, so that the BM layer formed on the substrate Depending on the arrangement pattern of each pattern, there is a problem that the position of the alignment mark to be provided on the substrate overlaps with the position of each pattern of the BM layer, and the substrate cannot be properly positioned.

Under such circumstances, conventionally, an exposure apparatus for positioning a substrate by a global alignment method has been used as an exposure apparatus for a colored layer forming process, resulting in an increase in manufacturing cost.
JP-A-8-45823

  The present invention has been made in consideration of such points, and regardless of the arrangement form of the pattern formed on the substrate, the positioning of the substrate is appropriately and inexpensively performed by using a technique using alignment marks. It is an object of the present invention to provide an exposure method and a substrate alignment method used in the method.

  In the present invention, as a first solving means, a plurality of shots are sequentially exposed at different exposure positions in a horizontal plane with respect to a single substrate with a photosensitive material to form a plurality of patterns on the substrate. In the method, with a photosensitive material including a plurality of rectangular first layer pattern areas arranged at different positions in a horizontal plane, and a plurality of substrate side alignment marks positioned in relation to each of the first layer pattern areas A first step of placing the substrate on an exposure stage, an exposure pattern region for exposing a second layer pattern region corresponding to each of the first layer pattern regions, and the exposure pattern region. A second step of disposing a photomask including a mask side alignment mark positioned so as to face the substrate placed on the exposure stage, When the mask-side alignment mark of the photomask is arranged so that the exposure pattern area of the photomask and the first layer pattern areas of the substrate coincide with each other in the horizontal plane, A second step positioned so as to be separated from the substrate-side alignment mark associated with each first layer pattern region by a predetermined shift amount; and the mask-side alignment mark of the photomask and the substrate The substrate placed on the exposure stage is placed in the photo stage so that a substrate-side alignment mark associated with a specific first layer pattern region of the plurality of first layer pattern regions matches in the horizontal plane. A third step of moving relative to the mask, the mask side alignment mark of the photomask and the front The exposure stage is moved with respect to the photomask in the horizontal plane from the alignment position where the substrate-side alignment mark related to the specific first layer pattern region of the substrate is aligned with the photomask. A fourth step of moving the exposure pattern region of the photomask and the specific first layer pattern region of the substrate in the horizontal plane by moving the step by an amount, and the exposure pattern region of the photomask, Irradiating exposure light toward the substrate through the photomask at an exposure position where the specific first layer pattern region of the substrate coincides with the horizontal plane, and the specific first layer pattern region of the substrate. A fifth step of forming a second layer pattern region in accordance with the one layer pattern region, and the substrate for the photomask The third step to the fifth step are repeated while sequentially moving the position in the horizontal plane, and a plurality of second layer pattern regions are formed in accordance with the plurality of first layer pattern regions of the substrate. An exposure method is provided.

  In the first solving means described above, at least a part of each of the first layer pattern regions of the substrate is disposed along a first direction in the horizontal plane, and each of the first layer patterns A substrate-side alignment mark related to the region is positioned outside a first direction side extending along the first direction in each of the first layer pattern regions, and the mask-side alignment mark of the photomask is The exposure pattern region is positioned outside a second direction side extending along a second direction orthogonal to the first direction, and the mask-side alignment mark of the photomask is the photomask. The first pattern area of the substrate when the exposure pattern area and the first layer pattern area of the substrate are arranged so as to coincide with each other in the horizontal plane. It is preferred that from the substrate side alignment marks associated with the pattern area along the second direction are positioned so that the state of being spaced apart by the predetermined shift amount.

  In the first solving means described above, it is preferable that the mask side alignment mark of the photomask is positioned outside a central portion of the second direction side of the exposure pattern region.

  Further, in the first solving means described above, at least a part of each of the first layer pattern regions of the substrate is connected to each other along the first direction in the horizontal plane, so that one large area is obtained. Preferably, in the fifth step, exposure light is irradiated toward the substrate through the photomask while shielding the mask-side alignment mark of the photomask. In this case, it is preferable that the substrate has at least two large-area patterns that are spaced apart from each other with respect to the second direction in the horizontal plane.

  Furthermore, the first solving means described above further includes a sixth step of adjusting a gap between the photomask and the substrate placed on the exposure stage, wherein the third step to the third step When repeating the five steps, it is preferable to perform the sixth step immediately before the third step or between the third step and the fourth step. In this case, the photomask further includes a gap measurement window used for detecting a gap between the photomask and the substrate, and the exposure pattern region of the photomask is the substrate of the substrate. It is preferable that a gap between the photomask and the substrate is detected through the gap measurement window at a gap detection position that is in a state of being separated from each first layer pattern region.

  In the first solving means described above, each of the first layer pattern areas of the substrate constitutes a black matrix layer of a color filter, and each of the second layer pattern areas is formed in accordance with the pattern of the black matrix layer. It is preferable to constitute a colored layer of a predetermined color.

  In the present invention, as a second solution, an exposure for forming a plurality of patterns on a single substrate with a photosensitive material by sequentially performing a plurality of shots at different exposure positions in a horizontal plane. In the substrate alignment method used in the method, a plurality of rectangular first layer pattern regions arranged at different positions in a horizontal plane, and a plurality of substrate sides positioned in relation to each of the first layer pattern regions A first step of placing a substrate with a photosensitive material including an alignment mark on an exposure stage; an exposure pattern region for exposing a second layer pattern region corresponding to each of the first layer pattern regions; A photomask including a mask-side alignment mark positioned in relation to the exposure pattern area is opposed to the substrate placed on the exposure stage. The mask-side alignment mark of the photomask is arranged so that the exposure pattern area of the photomask and the first layer pattern areas of the substrate coincide with each other in the horizontal plane. A second step, wherein the photomask is positioned so as to be separated by a predetermined shift amount from a substrate-side alignment mark associated with each of the first layer pattern regions of the substrate. On the exposure stage such that the mask side alignment mark of the substrate and the substrate side alignment mark related to a specific first layer pattern region of the plurality of first layer pattern regions of the substrate coincide with each other in the horizontal plane. A third step of moving the substrate placed on the substrate relative to the photomask; and the photomask From the alignment position where the mask side alignment mark and the substrate side alignment mark related to the specific first layer pattern region of the substrate coincide with each other in the horizontal plane, the exposure stage is moved in the horizontal plane to the photomask. And a fourth step of causing the exposure pattern area of the photomask and the specific first layer pattern area of the substrate to coincide with each other in the horizontal plane. A feature of a substrate alignment method is provided.

  According to the first and second solving means of the present invention, the alignment in which the mask-side alignment mark of the photomask and the substrate-side alignment mark related to each first layer pattern region of the substrate coincide with each other in the XY plane. The position of the photomask and the exposure position where the exposure pattern area of the photomask and the first layer pattern area of the substrate coincide with each other are separated from each other by a predetermined shift amount. After the primary alignment between the substrate and the substrate is performed, the substrate is moved from the alignment position to the exposure position by a predetermined amount of step movement to finally position the substrate at the exposure position. Therefore, it is possible to effectively prevent the position of the first layer pattern region (and the colored layer pattern region) formed on the substrate from overlapping with the position of the alignment mark to be provided on the substrate. The substrate can be properly positioned using an inexpensive exposure apparatus based on the technique used.

  According to the first and second solving means of the present invention, when the exposure pattern region of the photomask and each first layer pattern region of the substrate are arranged so as to coincide with each other in the horizontal plane, The mask-side alignment mark of the photomask and each first-layer pattern of the substrate are separated from the substrate-side alignment mark associated with each first-layer pattern region by a predetermined shift amount along a predetermined direction. By positioning the substrate side alignment mark related to the region, the movement from the alignment position to the exposure position can be performed easily and accurately, and the substrate can be positioned more appropriately.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, an exposure apparatus for realizing an exposure method according to an embodiment of the present invention will be described with reference to FIG. In the present embodiment, a colored layer forming step (a black matrix layer formed on a substrate with a photosensitive material) which is one of the manufacturing steps for manufacturing a color filter by the exposure apparatus 1 shown in FIG. A case where the step of forming a colored layer having a pattern of each color (R, G, or B) in accordance with the pattern of (BM layer) is described as an example. In the present embodiment, the exposure apparatus 1 shown in FIG. 1 sequentially exposes a plurality of shots on a substrate with a photosensitive material at a plurality of shots at different exposure positions in a horizontal plane. The case of forming will be described as an example.

  As shown in FIG. 1, the exposure apparatus 1 includes a base 11 and an exposure stage 12 installed on the base 11. The exposure stage 12 mounts a substrate with a photosensitive material (hereinafter also simply referred to as “substrate”) 50 to be exposed, and the substrate 50 can be sucked and held by a vacuum chuck method. ing. A driving stage 13 is connected to the exposure stage 12, and the exposure stage 12 is placed on the exposure stage 12 by moving the exposure stage 12 in the vertical direction (Z direction) and the horizontal plane (XY plane) by the driving stage 13. The formed substrate 50 can be moved relative to the photomask 40.

  Here, the substrate 50 placed on the exposure stage 12 is, for example, as shown in FIG. As shown in FIG. 2, a plurality of rectangular BM layer pattern regions (first layer pattern regions) 51 to 56 are formed on the substrate 50. The BM layer pattern areas 51 to 56 are arranged at different positions in the XY plane. Among these, the BM layer pattern regions 51 to 53 are connected to each other along the Y direction (first direction) to form one large area pattern. Similarly, the BM layer pattern regions 54 to 56 are also formed. One large area pattern is formed by being connected to each other along the Y direction. Note that the BM layer pattern regions 51 to 53 and the BM layer pattern regions 54 to 56 are arranged apart from each other in the X direction (second direction).

  As shown in FIG. 2, a plurality of substrate-side alignment marks 57 positioned in relation to the BM layer pattern regions 51 to 56 are formed on the substrate 50. Here, the BM layer pattern areas 51 to 53 and 54 to 56 are arranged along the Y direction in the XY plane, and the substrate-side alignment marks 57 related to the BM layer pattern areas 51 to 53 and 54 to 56 are arranged. Are at least two on the left and right of each BM layer pattern region 51-53, 54-56 (outside (on both sides) the Y-direction side extending along the Y direction among the BM layer pattern regions 51-53, 54-56). It is positioned one by one.

  On the other hand, a mask stage 15 is provided above the exposure stage 12 so that the photomask 40 can be sucked and held by a vacuum chuck method. That is, a vacuum suction hole (not shown) is formed in a portion of the lower surface of the mask stage 15 corresponding to the outer periphery of the photomask 40, and the photomask 40 is vacuum-sucked by this vacuum suction hole (not shown). Can be held.

  An irradiation optical system 20 that irradiates exposure light toward the substrate 50 placed on the exposure stage 12 is provided above the photomask 40. Such an irradiation optical system 20 includes an ultrahigh pressure mercury lamp 21 and optical elements (parabolic mirror 22, cold mirror 23, integrator lens 24, and spherical mirror 25) for guiding light emitted from the ultrahigh pressure mercury lamp 21 toward the substrate 50. The exposure light (parallel light) can be irradiated toward the substrate 50 placed on the exposure stage 12. In such an irradiation optical system 20, a shutter 26 is provided between the cold mirror 23 and the integrator lens 24 so that the light emitted from the ultrahigh pressure mercury lamp 21 can be appropriately shielded and opened. It has become.

  Here, the photomask 40 sucked and held on the mask stage 15 is, for example, as shown in FIG. As shown in FIG. 3, the photomask 40 is provided with a color filter pixel portion (exposure pattern region) for exposing the colored layer pattern region (second layer pattern region) corresponding to each of the BM layer pattern regions 51 to 56. ) 41 is formed. The colored layer pattern region formed by the color filter pixel portion 41 is also connected to each other on the substrate 50 in the same manner as the BM layer pattern regions 51 to 56 formed on the substrate 50.

  Further, as shown in FIG. 3, a mask-side alignment mark 42 positioned in relation to the color filter pixel portion 41 is formed on the photomask 40. Here, the mask-side alignment mark 42 of the photomask 40 is located above and below the central portion of the color filter pixel portion 41 (outside (on both sides) of the central portion of the X-direction side extending along the X direction in the color filter pixel portion 41). One by one. The mask-side alignment mark 42 of the photomask 40 is arranged so that the color filter pixel portion 41 of the photomask 40 and the BM layer pattern areas 51 to 56 of the substrate 50 coincide with each other in the XY plane. Sometimes (see, for example, FIG. 6), the substrate 50 is positioned so as to be separated from the substrate-side alignment mark 57 associated with each BM layer pattern region 51 to 56 by a predetermined shift amount along the X direction. .

  Further, as shown in FIG. 3, the photomask 40 includes upper and lower portions (outside (on both sides) of the central portion of the side in the X direction extending along the X direction in the color filter pixel portion 41). ), Two gap measuring window portions 43 are formed. The gap measurement window 43 is used for detecting a gap between the photomask 40 and the substrate 50.

  In FIG. 3, a dotted line 44 indicates an effective exposure area, and an area inside the dotted line 44 corresponds to the opening of the mask stage 15, and an area outside the dotted line 44 is sucked and held by the mask stage 15. It becomes.

  Above the center of the photomask 40 having such a configuration, there is a gap detection device 16 that detects a gap (distance and parallelism) between the photomask 40 and the substrate 50 placed on the exposure stage 12. Is provided. Here, the gap detection device 16 is composed of a length measuring device using a laser interferometry or the like, and is installed so as to be directly above each of the four gap measurement windows 43 of the photomask 40 as shown in FIG. Has been.

  In addition, a position detection device 17 that detects a relative positional relationship between the substrate 50 placed on the exposure stage 12 and the photomask 40 is provided above the center of the photomask 40. Here, the position detection device 17 is composed of a CCD or the like connected to an image processing device (not shown), and is directly above each of the two mask side alignment marks 42 of the photomask 40 as shown in FIG. It is installed as follows.

  Further, a light shielding plate 18 is provided above the outer periphery of the photomask 40 to shield exposure light passing through the outer periphery of the photomask 40. The light shielding plate 18 is provided with a light shielding plate driving device 19 so that the light shielding plate 18 can be moved so as to take either the position where the photomask 40 is shielded or the position where the photomask 40 is not shielded. It has become.

  A controller 27 is connected to the exposure stage 12, the drive stage 13, the irradiation optical system 20 (such as the ultrahigh pressure mercury lamp 21 and the shutter 26), the gap detection device 16, the position detection device 17, and the light shielding plate drive device 19. The above-described components can be controlled in conjunction with the operation of a robot arm (not shown) that supplies and discharges the substrate 50 to and from the exposure stage 12.

  Next, the procedure of the exposure method realized by the exposure apparatus 1 shown in FIG. 1 will be described.

  First, under the control of the control device 27, a substrate 50 with a photosensitive material is supplied into the exposure apparatus 1 using a robot arm (not shown) or the like and placed on the exposure stage 12. At this time, the substrate 50 is transferred to a lift pin (not shown) protruding from the exposure stage 12 (step 101), and then transferred to the exposure stage 12 by lowering the lift pin (step 102). . Further, after the substrate 50 is transferred from the lift pins (not shown) to the exposure stage 12, the substrate 50 is sucked and held on the exposure stage 12 by a vacuum chuck method (step 103).

  Next, under the control of the control device 27, the exposure stage 12 is raised, and a gap between the photomask 40 sucked and held on the mask stage 15 and the substrate 50 placed on the exposure stage 12 is detected. The substrate 50 is positioned at such a height that it can (step 104). Thereby, the photomask 40 sucked and held on the mask stage 15 is arranged so as to face the substrate 50 placed on the exposure stage 12.

  Thereafter, under the control of the control device 27, 6 shot exposure is performed on the substrate 50 while sequentially moving the position of the substrate 50 with respect to the photomask 40, and 6 on the BM layer pattern areas 51 to 56 of the substrate 50. Two colored layer pattern regions (not shown) are formed (steps 105 to 114).

  First, the first shot exposure (when n = 1) will be described.

  In this case, first, under the control of the control device 27, after setting the counter n representing the number of shots to n = 1 (step 105), the substrate 50 is placed at the gap detection position of the first shot. The exposure stage 12 is moved as described above (step 106).

  Here, since the gap detection by the gap detection device 16 cannot be performed on each of the BM layer pattern regions 51 to 56 formed on the substrate 50, the gap detection position of the first shot is determined by the gap detection device 16. A position is set such that at least a part of the gap measurement window 43 of the photomask 40 located directly below the BM layer pattern areas 51 to 56 of the substrate 50 is removed. Specifically, for example, the first shot BM layer pattern region 51 of the substrate 50 is shifted in the X direction relative to the photomask 40 as shown in FIG. It is preferable to set the position. In this case, of the four gap measurement window portions 43 of the photomask 40, three gap measurement window portions 43 (see hatched portions in FIG. 5) are out of the BM layer pattern regions 51 to 56 of the substrate 50. become.

  Then, after the exposure stage 12 is positioned so that the substrate 50 is arranged at the gap detection position of the first shot in this way, the photomask 40 is passed through the three gap measurement windows 43 of the photomask 40. A gap between the substrate and the substrate 50 is detected and the gap is adjusted (step 107). At this time, since the gap detection by the gap detection device 16 is performed at three different locations in the XY plane, not only the distance between the photomask 40 and the substrate 50 but also the parallelism between them is detected. It becomes. Therefore, under the control of the control device 27, the height and inclination of the exposure stage 12 are adjusted by the drive stage 13 based on such a detection result, so that the gap between the photomask 40 and the substrate 50 ( Distance and parallelism) can be adjusted appropriately.

  Thereafter, the exposure stage 12 is moved stepwise within the XY plane to the alignment detection position of the first shot while maintaining the adjusted gap (distance and parallelism) (step 108). At this time, the exposure stage 12 is moved by controlling the drive stage 13 by the control device 27 based on the detection result by a laser interferometer (not shown) or the like.

  At the alignment detection position of the first shot, the two mask side alignment marks 42 of the photomask 40 and the two substrate side alignment marks 57 related to the first BM layer pattern region 51 of the substrate 50 are in the XY plane. The substrate 50 placed on the exposure stage 12 is moved relative to the photomask 40 so as to coincide with each other, and alignment is performed (step 109).

  Here, since the mask-side alignment marks 42 of the photomask 40 are arranged above and below the central portion of the color filter pixel portion 41, as shown in FIG. Is a position shifted relative to the photomask 40 in the X direction.

  From the alignment position where the mask side alignment mark 42 of the photomask 40 and the substrate side alignment mark 57 related to the first BM layer pattern region 51 of the substrate 50 are matched in the XY plane in this way, While maintaining the adjusted gap (distance and parallelism), the exposure stage 12 is stepped in the X direction by a predetermined shift amount with respect to the photomask 40 in the XY plane, and the color filter pixel portion of the photomask 40 41 is matched with the first BM layer pattern region 51 of the substrate 50 (step 110). At this time, the exposure stage 12 is moved by controlling the drive stage 13 by the control device 27 based on the detection result by a laser interferometer (not shown) or the like.

  Thereafter, at the exposure position where the color filter pixel portion 41 of the photomask 40 and the first BM layer pattern area 51 of the substrate 50 coincide with each other, as shown in FIG. After the mask alignment mark 42 and the gap measurement window 43 of 40 are shielded (step 111), exposure light is irradiated toward the substrate 50 through the photomask 40. As a result, a first colored layer pattern region (not shown) is formed on the first BM layer pattern region 51 of the substrate 50 (step 112).

  As described above, the first shot exposure (when n = 1) was performed to form the first colored layer pattern region (not shown) on the first BM layer pattern region 51 of the substrate 50. Thereafter, the second and third shot exposures (n = 2, 2) are performed by repeating the above-described steps 106 to 112 while sequentially moving the position of the substrate 50 relative to the photomask 40 in the Y direction within the XY plane. 3), the second and third colored layer pattern regions (not shown) can be formed on the second and third BM layer pattern regions 52 and 53 of the substrate 50.

  Hereinafter, the second shot exposure (when n = 2) and the third shot exposure (when n = 3) will be described.

  When performing exposure of the second shot, under the control of the control device 27, after setting the counter n indicating the number of shots to n = 2 (step 113 and step 114), the gap detection of the second shot is performed. The exposure stage 12 is moved so that the substrate 50 is placed at the position (step 106). In this case, as shown in FIG. 8, the gap detection position of the second shot has two gap measurement windows 43 (see the shaded area in FIG. 8) of the four gap measurement windows 43 of the photomask 40. ) Is out of the BM layer pattern areas 51 to 56.

  Then, after the exposure stage 12 is positioned so that the substrate 50 is disposed at the gap detection position of the second shot in this way, the photomask 40 is passed through the two gap measurement windows 43 of the photomask 40. A gap between the substrate and the substrate 50 is detected and the gap is adjusted (step 107). At this time, since the gap detection by the gap detection device 16 is performed at two different points in the XY plane, only the distance between the photomask 40 and the substrate 50 is detected, and the parallelism between the two is detected. I can't. For this reason, under the control of the control device 27, the height of the exposure stage 12 is driven by the drive stage 13 based on the detection result described above while maintaining the gap (parallelism) adjusted in the exposure of the first shot. Adjust.

  Thereafter, as in the case of the first shot exposure, the exposure stage 12 is stepped to the alignment detection position for the second shot in the XY plane while maintaining the adjusted gap (distance and parallelism). After (step 108), at the alignment detection position, as shown in FIG. 9, two substrate side alignments related to the two mask side alignment marks 42 of the photomask 40 and the second BM layer pattern region 52 of the substrate 50 are obtained. The substrate 50 placed on the exposure stage 12 is moved relative to the photomask 40 so that the mark 57 coincides with the XY plane, and alignment is performed (step 109).

  From the alignment position where the mask side alignment mark 42 of the photomask 40 and the substrate side alignment mark 57 related to the second BM layer pattern region 52 of the substrate 50 coincide in the XY plane in this way, While maintaining the adjusted gap (distance and parallelism), the exposure stage 12 is stepped in the X direction by a predetermined shift amount with respect to the photomask 40 in the XY plane, and the color filter pixel portion of the photomask 40 41 is matched with the second BM layer pattern region 52 of the substrate 50 (step 110).

  Thereafter, at the exposure position where the color filter pixel portion 41 of the photomask 40 and the second BM layer pattern area 52 of the substrate 50 coincide with each other, as shown in FIG. After the mask alignment mark 42 and the gap measurement window 43 of 40 are shielded (step 111), exposure light is irradiated toward the substrate 50 through the photomask 40. As a result, a second colored layer pattern region (not shown) is formed on the second BM layer pattern region 52 of the substrate 50 (step 112).

  Similarly, when performing exposure for the third shot, after setting the counter n representing the number of shots to n = 3 under the control of the control device 27 (step 113 and step 114), the third shot The exposure stage 12 is moved so that the substrate 50 is disposed at the gap detection position (step 106). In this case, as shown in FIG. 11, the gap detection position in the third shot is three gap measurement window portions 43 (see hatched portions in FIG. 11) of the four gap measurement window portions 43 of the photomask 40. ) Is out of the BM layer pattern areas 51 to 56.

  Then, after the exposure stage 12 is positioned so that the substrate 50 is arranged at the gap detection position of the third shot in this way, the photomask 40 is passed through the three gap measurement windows 43 of the photomask 40. A gap between the substrate and the substrate 50 is detected and the gap is adjusted (step 107). At this time, since the gap detection by the gap detection device 16 is performed at three different locations in the XY plane, not only the distance between the photomask 40 and the substrate 50 but also the parallelism between them is detected. It becomes. Therefore, under the control of the control device 27, the height and inclination of the exposure stage 12 are adjusted by the drive stage 13 based on such a detection result, so that the gap between the photomask 40 and the substrate 50 ( Distance and parallelism) can be adjusted appropriately.

  Thereafter, as in the case of the exposure for the first shot and the second shot, the exposure stage up to the alignment detection position for the third shot in the XY plane while maintaining the adjusted gap (distance and parallelism). 12 is moved stepwise (step 108), and at the alignment detection position, the two mask-side alignment marks 42 of the photomask 40 and the third BM layer pattern region 53 of the substrate 50 are related as shown in FIG. Alignment is performed by moving the substrate 50 placed on the exposure stage 12 relative to the photomask 40 so that the substrate side alignment mark 57 coincides with the XY plane (step 109).

  Then, the gap adjusted from the alignment position where the mask side alignment mark 42 of the photomask 40 and the substrate side alignment mark 57 related to the third BM layer pattern region 53 of the substrate 50 coincide with each other in this way. While maintaining (distance and parallelism), the exposure stage 12 is stepped in the X direction by a predetermined shift amount with respect to the photomask 40 in the XY plane, and the color filter pixel portion 41 and the substrate 50 of the photomask 40 are moved. Are matched with the third BM layer pattern region 53 (step 110).

  Thereafter, at the exposure position where the color filter pixel portion 41 of the photomask 40 and the third BM layer pattern region 53 of the substrate 50 coincide with each other, as shown in FIG. After the mask alignment mark 42 and the gap measurement window 43 of 40 are shielded (step 111), exposure light is irradiated toward the substrate 50 through the photomask 40. As a result, a third colored layer pattern region (not shown) is formed on the third BM layer pattern region 53 of the substrate 50 (step 112).

  As described above, exposure from the first shot to the third shot is performed while sequentially moving the position of the substrate 50 with respect to the photomask 40 in the Y direction within the XY plane (when n = 1, 2, 3). By performing the above, three colored layer pattern regions (not shown) forming one large area pattern can be formed on the BM layer pattern regions 51 to 53 of the substrate 50 by being connected to each other.

  Similarly, by performing exposure from the fourth shot to the sixth shot, a large-area pattern is formed on the BM layer pattern regions 54 to 56 of the substrate 50 by being connected to each other. Three colored layer pattern regions (not shown) can be formed. Here, since the basic procedure in the exposure from the fourth shot to the sixth shot is the same as the procedure in the exposure from the first shot to the third shot, detailed description is omitted here. .

  As described above, six shots from the first shot to the sixth shot are performed to form six colored layer pattern regions (not shown) on the BM layer pattern regions 51 to 56 of the substrate 50. After that, the exposure stage 12 is lowered to the substrate dispensing position (step 115), and the suction state of the substrate 50 by the exposure stage 12 is released (step 116). Next, after lift pins (not shown) of the exposure stage 12 are raised, the exposed substrate 50 is discharged out of the exposure apparatus 1 using a robot arm (not shown) or the like (step 118).

  Thus, according to the present embodiment, the mask-side alignment mark 42 of the photomask 40 and the substrate-side alignment mark 57 related to the BM layer pattern regions 51 to 56 of the substrate 50 are matched in the XY plane. And an alignment position where the color filter pixel portion 41 of the photomask 40 and the BM layer pattern areas 51 to 56 of the substrate 50 coincide with each other in the X direction by a predetermined shift amount. After the primary alignment between the photomask 40 and the substrate 50 is performed at the alignment position, the substrate 50 is finally moved from the alignment position to the exposure position by step movement in the X direction. Positioning is performed at the exposure position. This effectively prevents the positions of the BM layer pattern areas 51 to 56 (and the colored layer pattern areas) formed on the substrate 50 from overlapping with the positions of the alignment marks to be provided on the substrate 50. The substrate 50 can be properly positioned using an inexpensive exposure apparatus based on a technique using alignment marks.

  Further, according to the present embodiment, when the color filter pixel portion 41 of the photomask 40 and the BM layer pattern regions 51 to 56 of the substrate 50 are arranged so as to coincide with each other in the XY plane, The mask-side alignment marks 42 of the photomask 40 and the BMs of the substrate 50 are separated from the substrate-side alignment marks 57 related to the BM layer pattern regions 51 to 56 by a predetermined shift amount along the X direction. Since the substrate-side alignment marks 57 related to the layer pattern areas 51 to 56 are positioned, the movement from the alignment position to the exposure position can be performed easily and accurately, and the substrate 50 can be positioned more appropriately. It can be carried out.

  Furthermore, according to the present embodiment, at least a part of each of the BM pattern areas 51 to 56 of the substrate 50 is connected to each other along the Y direction in the XY plane to form one large area pattern. In step 111, the substrate 50 is irradiated with exposure light through the photomask 40 while shielding the mask side alignment mark 42 and the gap measurement window 43 of the photomask 40. Even when a pattern with a large area is formed such that the positions of the BM layer pattern areas 51 to 56 (and the colored layer pattern areas) formed thereon overlap the positions of alignment marks to be provided on the substrate 50. The substrate 50 can be properly positioned using an inexpensive exposure apparatus based on a technique using alignment marks. .

  Furthermore, according to the present embodiment, when the steps 106 to 112 are repeated, the color filter pixel portion 41 of the photomask 40 has each BM layer pattern of the substrate 50 immediately before the alignment step (steps 108 and 109). Since the gap between the photomask 40 and the substrate 50 is detected through the gap measurement window 43 at the gap detection position in a state separated from the regions 51 to 56, the gap is formed on the substrate 50. Even when a pattern having a large area is formed such that the positions of the BM layer pattern areas 51 to 56 (and the colored layer pattern areas) to be formed and the positions of the alignment marks to be provided on the substrate 50 overlap. The gap between 40 and the substrate 50 can be detected properly.

  In the embodiment described above, the specific arrangement mode and number of the substrate-side alignment mark 57 provided on the substrate 50 and the mask-side alignment mark 42 provided on the photomask 40 are shown in FIGS. The alignment position, which is a relative two position between the photomask 40 and the substrate 50, and the exposure position are separated from each other by a predetermined shift amount. Any arrangement and number other than this can be adopted as long as it can take an aspect that can move from the alignment position to the exposure position by step movement in the X or Y direction. .

  In the embodiment described above, an example is given in which a part of the BM layer pattern regions 51 to 56 formed on the substrate 50 and a part of the corresponding colored layer pattern region (not shown) are connected to each other. However, the arrangement mode of the BM layer pattern areas 51 to 56 and the corresponding colored layer pattern area (not shown) is not limited to this, and the same applies to other arrangement modes. Can be applied.

  Furthermore, in the above-described embodiment, the gap adjustment process (steps 106 and 107) is performed immediately before the alignment process (steps 108 and 109). However, the present invention is not limited to this, and the alignment process (steps 108 and 109) You may perform between exposure processes (step 110 thru | or 112). In addition, when the fluctuation of the height and inclination of the substrate 50 due to the movement of the exposure stage 12 is small, it is not performed for each shot exposure, but only once before performing exposure for all shots. May be.

The figure which shows an example of the exposure apparatus for implement | achieving the exposure method which concerns on one embodiment of this invention. The flowchart for demonstrating the procedure of the exposure method (colored layer formation process) which concerns on one embodiment of this invention. The top view which shows an example of the board | substrate (board | substrate with which BM layer was formed) used as the exposure object used with the exposure method (colored layer formation process) which concerns on one embodiment of this invention. The top view which shows an example of the photomask used with the exposure method (colored layer formation process) which concerns on one embodiment of this invention. The figure for demonstrating the gap adjustment process of the 1st shot in the exposure method shown in FIG. The figure for demonstrating the alignment process of the 1st shot in the exposure method shown in FIG. The figure for demonstrating the exposure process of the 1st shot in the exposure method shown in FIG. The figure for demonstrating the gap adjustment process of the 2nd shot in the exposure method shown in FIG. The figure for demonstrating the alignment process of the 2nd shot in the exposure method shown in FIG. The figure for demonstrating the exposure process of the 2nd shot in the exposure method shown in FIG. The figure for demonstrating the gap adjustment process of the 3rd shot in the exposure method shown in FIG. The figure for demonstrating the alignment process of the 3rd shot in the exposure method shown in FIG. The figure for demonstrating the exposure process of the 3rd shot in the exposure method shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 11 Base 12 Exposure stage 13 Drive stage 15 Mask stage 16 Gap detection apparatus 17 Position detection apparatus 18 Light shielding plate 19 Light shielding plate drive apparatus 20 Irradiation optical system 21 Super high pressure mercury lamp 22 Parabolic mirror 23 Cold mirror 24 Integrator lens 25 Spherical mirror 26 Shutter 27 Control device 40 Photomask 41 Color filter pixel part 42 Alignment mark 43 Gap measurement window part 44 Effective exposure area 50 Substrate with photosensitive material 51 to 56 BM layer pattern region 57 formed on the substrate 57 Substrate side alignment mark

Claims (14)

In an exposure method for forming a plurality of patterns on the substrate by sequentially performing exposure of a plurality of shots at different exposure positions in a horizontal plane with respect to a single substrate with a photosensitive material,
A substrate with a photosensitive material, including a plurality of rectangular first layer pattern regions arranged at different positions in a horizontal plane, and a plurality of substrate side alignment marks positioned in relation to the first layer pattern regions. A first step of placing on the exposure stage;
A photomask including an exposure pattern area for exposing a second layer pattern area corresponding to each of the first layer pattern areas, and a mask side alignment mark positioned in relation to the exposure pattern area; A second step of disposing the substrate so as to face the substrate placed on an exposure stage, wherein the mask-side alignment mark of the photomask includes the exposure pattern region of the photomask and each of the substrates; When arranged so as to coincide with the first layer pattern region in the horizontal plane, the substrate is aligned with a predetermined shift amount from the substrate-side alignment mark associated with each first layer pattern region of the substrate. A second step, located in
The mask-side alignment mark of the photomask and the substrate-side alignment mark related to a specific first layer pattern region of the plurality of first layer pattern regions of the substrate are aligned with each other in the horizontal plane. A third step of moving the substrate placed on an exposure stage relative to the photomask;
The exposure stage in the horizontal plane from the alignment position where the mask side alignment mark of the photomask and the substrate side alignment mark related to the specific first layer pattern region of the substrate are aligned in the horizontal plane. A step of moving the exposure pattern region of the photomask and the specific first layer pattern region of the substrate in the horizontal plane by moving the step by a predetermined amount relative to the photomask. ,
Exposure light is directed toward the substrate through the photomask at an exposure position where the exposure pattern region of the photomask and the specific first layer pattern region of the substrate coincide with each other in the horizontal plane. Irradiating and forming a second layer pattern region in conformity with the specific first layer pattern region of the substrate,
The third step to the fifth step are repeated while sequentially moving the position of the substrate with respect to the photomask in the horizontal plane, and a plurality of second layer pattern regions are aligned with the plurality of first layer pattern regions of the substrate. Forming an exposure method.   At least a part of each of the first layer pattern regions of the substrate is disposed along a first direction in the horizontal plane, and the substrate-side alignment mark associated with each of the first layer pattern regions is Each of the first layer pattern regions is positioned outside a first direction side extending along the first direction, and the mask-side alignment mark of the photomask is the first of the exposure pattern regions. The mask-side alignment mark of the photomask is positioned outside the second direction side extending along a second direction orthogonal to the direction of the exposure pattern region of the photomask and the substrate of the substrate When the first layer pattern regions are arranged so as to coincide with each other in the horizontal plane, the substrate-side alignment associated with the first layer pattern regions of the substrate is arranged. Characterized in that it is positioned such that the state of being spaced apart by the predetermined shift amount along the second direction from the at sign A method according to claim 1.   The method according to claim 2, wherein the mask side alignment mark of the photomask is positioned outside a central portion of the second direction side of the exposure pattern region. At least a part of each of the first layer pattern regions of the substrate is connected to each other along the first direction in the horizontal plane to form one large area pattern,
4. The exposure light according to claim 2, wherein in the fifth step, exposure light is irradiated toward the substrate through the photomask while shielding the mask side alignment mark of the photomask. Method.   The method according to claim 4, wherein the substrate has at least two large area patterns spaced apart from each other with respect to the second direction in the horizontal plane. A sixth step of adjusting a gap between the photomask and the substrate placed on the exposure stage;
The sixth step is performed immediately before the third step or between the third step and the fourth step when the third step to the fifth step are repeated. The method as described in any one of thru | or 5. The photomask further includes a gap measurement window used to detect a gap between the photomask and the substrate,
Between the photomask and the substrate through the gap measurement window at a gap detection position where the exposure pattern region of the photomask is separated from the first layer pattern regions of the substrate. The method according to claim 6, further comprising detecting a gap.   Each first layer pattern area of the substrate constitutes a black matrix layer of a color filter, and each second layer pattern area constitutes a colored layer of a predetermined color formed in accordance with the pattern of the black matrix layer. The method according to claim 1, characterized in that: In the substrate alignment method used in the exposure method of forming a plurality of patterns on the substrate by sequentially performing a plurality of shot exposures at different exposure positions in a horizontal plane with respect to a single substrate with a photosensitive material,
A substrate with a photosensitive material, including a plurality of rectangular first layer pattern regions arranged at different positions in a horizontal plane, and a plurality of substrate side alignment marks positioned in relation to the first layer pattern regions. A first step of placing on the exposure stage;
A photomask including an exposure pattern area for exposing a second layer pattern area corresponding to each of the first layer pattern areas, and a mask side alignment mark positioned in relation to the exposure pattern area; A second step of disposing the substrate so as to face the substrate placed on an exposure stage, wherein the mask-side alignment mark of the photomask includes the exposure pattern region of the photomask and each of the substrates; When arranged so as to coincide with the first layer pattern region in the horizontal plane, the substrate is aligned with a predetermined shift amount from the substrate-side alignment mark associated with each first layer pattern region of the substrate. A second step, located in
The mask-side alignment mark of the photomask and the substrate-side alignment mark related to a specific first layer pattern region of the plurality of first layer pattern regions of the substrate are aligned with each other in the horizontal plane. A third step of moving the substrate placed on an exposure stage relative to the photomask;
The exposure stage in the horizontal plane from the alignment position where the mask side alignment mark of the photomask and the substrate side alignment mark related to the specific first layer pattern region of the substrate are aligned in the horizontal plane. A step of moving the exposure pattern region of the photomask and the specific first layer pattern region of the substrate in the horizontal plane by moving the step by a predetermined amount relative to the photomask. only including,
The substrate alignment method, wherein the third step and the fourth step are repeated while sequentially moving the position of the substrate with respect to the photomask in the horizontal plane .   At least a part of each of the first layer pattern regions of the substrate is disposed along a first direction in the horizontal plane, and the substrate-side alignment mark associated with each of the first layer pattern regions is Each of the first layer pattern regions is positioned outside a first direction side extending along the first direction, and the mask-side alignment mark of the photomask is the first of the exposure pattern regions. The mask-side alignment mark of the photomask is positioned outside the second direction side extending along a second direction orthogonal to the direction of the exposure pattern region of the photomask and the substrate of the substrate When the first layer pattern regions are arranged so as to coincide with each other in the horizontal plane, the substrate-side alignment associated with the first layer pattern regions of the substrate is arranged. Characterized in that it is positioned such that the state of being spaced apart by the predetermined shift amount along the second direction from the at sign The method of claim 9.   11. The method according to claim 10, wherein the mask side alignment mark of the photomask is positioned outside a central portion of the second direction side of the exposure pattern region.   At least a part of each of the first layer pattern regions of the substrate is connected to each other along the first direction in the horizontal plane to form one large area pattern. 12. The method according to claim 10 or 11.   13. The method of claim 12, wherein the substrate has at least two large area patterns spaced from each other with respect to the second direction in the horizontal plane.   Each first layer pattern area of the substrate constitutes a black matrix layer of a color filter, and each second layer pattern area constitutes a colored layer of a predetermined color formed in accordance with the pattern of the black matrix layer. 14. A method according to any one of claims 9 to 13, characterized in that

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