TWI512388B - Photomask, laser beam annealing apparatus and exposure apparatus therewith - Google Patents

Description

Photomask, laser annealing device and exposure device using the same

The present invention relates to a reticle that follows a substrate that is transported in a certain direction and selectively illuminates light at a plurality of locations on the substrate, and more particularly relates to a reticle, laser annealing using the reticle The device and the exposure device can satisfactorily follow the moving substrate even when the light is irradiated on the same type of substrate to the position intersecting the substrate transfer direction.

The conventional photomasks are provided with a plurality of mask patterns formed at a certain arrangement pitch in a direction intersecting the substrate transport direction to allow light to pass therethrough, and opposite directions of the substrate transport direction with respect to the plurality of mask patterns. a registration mark formed at a position separated by a distance, wherein the structure of the alignment mark is provided with a pair of thin lines having a plurality of patterns equal to the direction in which the substrate is conveyed in a direction orthogonal to the substrate transport direction. The interval between the integral multiples of the pitches is set to be parallel to the substrate transport direction (for example, JP-A-2008-216593).

However, in the conventional mask, the interval between the pair of thin lines parallel to the substrate transport direction of the alignment mark is equal to the integral multiple of the arrangement pitch of the plurality of patterns provided on the substrate in the direction intersecting the substrate transport direction. Therefore, when the light is irradiated on the same substrate to the position intersecting the substrate transport direction, the pair of thin lines of the alignment mark interfere with the edge portion of the pattern on the substrate parallel to the substrate transport direction. Since it is difficult to perform detection, there is a case where the reference position of the alignment mark cannot be detected correctly. Therefore, there is a decrease in the followability of the reticle to the substrate, and it is impossible to illuminate the target position on the substrate with high precision.

Therefore, the present invention is directed to such a problem, and an object thereof is to provide a photomask, a laser annealing apparatus using the same, and an exposure apparatus, even if the light is irradiated on the same substrate to the substrate transfer direction. In the case of the position in the cross direction, the moving substrate can still be well followed.

In order to achieve the above object, the photomask according to the first aspect of the invention is characterized in that an array-shaped plural pattern is provided on the surface at a constant arrangement pitch, and the light is selectively irradiated at a plurality of positions on the substrate conveyed in a certain direction. There is a plurality of mask patterns formed by a certain arrangement pitch in a direction intersecting the transport direction of the substrate to allow light to pass through; and a plurality of alignment marks, the structure having a pair of thin lines relative to the plurality of masks The curtain patterns are disposed at a position opposite to the substrate transport direction at a predetermined distance from each other in the substrate transport direction, and a predetermined reference position between the pair of thin lines is in a direction intersecting the substrate transport direction. Formed in a state of being offset from each other by a predetermined distance, wherein the pair of thin wires has an interval equal to an integral multiple of an arrangement pitch of the plurality of patterns disposed on the substrate in a direction intersecting the substrate transport direction, and in parallel Formed in the substrate transport direction.

According to the above configuration, when the light is irradiated to the position of the same type of substrate which is shifted to the direction in which the substrate is conveyed, a suitable one of the plurality of alignment marks arranged at a certain distance from each other in the substrate transfer direction is selected. The alignment mark reduces the interference between the pair of thin wires parallel to the substrate transfer direction of the alignment mark and the edge portions of the pattern provided in the substrate parallel to the substrate transfer direction. Thereby, even if the light is irradiated on the same substrate to the position in the direction intersecting the substrate transport direction, the appropriate index can be selected by selecting an appropriate alignment mark from the plurality of alignment marks. The pair of thin wires of the selected alignment mark and the pattern provided by the substrate are parallel to the interference of both edge portions in the substrate transfer direction. Thus, a pair of thin lines of the selected alignment mark can be easily detected, so that the reference position of the alignment mark can be easily calculated. Therefore, the alignment mark selected from the plurality of alignment marks can be used to make the mask follow the moving substrate well.

Further, in a state in which the reference position of the selected alignment mark among the plurality of registration marks provided by the mask and the reference position set by the substrate are aligned, one of the selected alignment marks The thin line is arranged to be substantially aligned with a center line of the pixel provided on the substrate parallel to the substrate transport direction. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially aligned. The center line parallel to the substrate transport direction of the pixels provided on the substrate further reduces the interference between the pair of thin lines and the edge portions of the pattern provided in the substrate parallel to the substrate transport direction. Therefore, since a pair of thin line positions of the alignment mark selected from the plurality of registration marks are located at a slight center position of the pattern farthest from the edge portions of the pattern set in the substrate parallel to the substrate transport direction, The interference between the pair of thin wires and the both edge portions of the above pattern can be avoided, so that the pair of thin wires can be detected more easily.

Further, a plurality of microlenses are formed on the substrate side corresponding to the mask patterns. The plurality of microlenses formed on the substrate side corresponding to the respective mask patterns are used to condense the light on the substrate. Thereby, the utilization efficiency of light can be improved.

Then, the plurality of mask patterns are formed in an array arrangement direction in a substrate arrangement direction and a crossing direction thereof at a constant arrangement pitch. The light is irradiated onto the plurality of positions on the substrate by a plurality of mask patterns formed in an array arrangement direction and a crossing direction thereof in an array arrangement with a constant arrangement pitch. Thus, the irradiation area of the light can be enlarged, so that the time such as the laser annealing treatment step or the exposure step can be shortened.

Further, in the laser annealing apparatus according to the second aspect of the invention, the substrate having the array-shaped plural pattern on the surface and having a predetermined pattern and transported in a certain direction is aligned with the mask disposed opposite to the substrate. The laser light is selectively irradiated at a plurality of positions on the substrate to anneal the film formed on the substrate, and the reticle stage is provided with a reticle stage and a plurality of mask patterns and a plurality of alignment marks a mask, wherein the reticle is moved in a substrate transport direction to select a align mark from the plurality of aligning marks; the plurality of mask patterns are formed at a certain arrangement pitch to intersect the transport direction of the substrate a direction for allowing the laser light to pass through; the structure of the plurality of alignment marks is provided with a pair of thin wires, and is disposed at a position opposite to the substrate transport direction with respect to the plurality of mask patterns at a distance from each other in the substrate transport direction And the reference position preset between the pair of thin wires is formed in a state of being offset from each other by a predetermined distance in a direction intersecting the substrate transport direction, The pair of thin wires have an interval equal to an integral multiple of an arrangement pitch of the plurality of patterns provided on the substrate in a direction intersecting the substrate transport direction, and are formed in parallel in the substrate transport direction; the line camera is configured to be The center axis of the long side of the thin line-shaped photosensitive portion is aligned with a center line intersecting the direction in which the substrate is conveyed from the alignment mark selected from the plurality of registration marks of the mask; and the alignment mechanism is such that the substrate is The mask is relatively moved in the intersecting direction of the substrate transport direction, and the positional relationship between the reference position of the selected alignment mark and the reference position set in advance by the substrate is set in advance.

According to the above configuration, when the laser beam is irradiated on the substrate in the direction in which the offset of the same type of substrate is shifted to the direction in which the substrate is conveyed, the mask is moved in the substrate transfer direction, and the substrate transfer direction is mutually Selecting an appropriate alignment mark among the plurality of registration marks arranged at a certain distance, and taking a line camera to take a pair of thin lines parallel to the substrate transport direction of the alignment mark and the reference position on the substrate, according to the captured image The alignment mechanism moves the substrate and the mask in the direction in which the substrate is conveyed in the direction in which the substrate is moved, so that the positional relationship between the reference position of the alignment mark and the reference position of the substrate is set in advance. Thereby, even if the laser light is irradiated on the same substrate to the position where the offset is in the direction intersecting the substrate transport direction, the annealing process can be performed by selecting an appropriate alignment mark from the plurality of alignment marks. The interference between the pair of thin wires of the selected alignment mark and the edges of the substrate provided in the substrate transport direction is reduced. Thus, a pair of thin lines of the selected alignment mark can be easily detected, so that the reference position of the alignment mark can be easily calculated. Therefore, the alignment mark selected from the plurality of alignment marks can be used to make the mask follow the moving substrate well.

Furthermore, in the state in which the reference position of the selected one of the plurality of registration marks set by the mask and the reference position set by the substrate are aligned, the selected alignment mark The pair of thin wires are arranged to be substantially aligned with a center line parallel to the substrate transport direction of the pixels provided on the substrate. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially The alignment is performed on the center line parallel to the substrate transport direction of the pixels provided on the substrate, thereby further reducing the interference between the pair of thin lines and the edge portions of the substrate disposed in the substrate transport direction. Therefore, a pair of thin line positions of the alignment mark selected from the plurality of alignment marks provided from the photomask are slightly apart from the pattern which is the farthest from the edge portions of the pattern disposed in the substrate parallel to the substrate transport direction. At the center position, interference between a pair of thin wires and both edge portions of the pattern can be avoided, so that the pair of thin wires can be detected more easily. Thus, the reference position of the reticle can be more easily calculated to accurately align the reticle with the substrate, so that the laser light can be irradiated with high precision on the target position set on the substrate.

Then, the mask is formed with a plurality of microlenses on the substrate side corresponding to the mask patterns. The laser light is condensed on the substrate by using a plurality of microlenses formed on the substrate side corresponding to the respective mask patterns. Thus, the power of the laser source can be reduced, thereby reducing the burden on the laser source and extending the life of the source.

Further, in the exposure apparatus according to the third aspect of the invention, the substrate is provided with an array-shaped complex pattern on the surface at a constant arrangement pitch, and the substrate is transported in a certain direction, and the ultraviolet ray is selected in alignment with the mask disposed opposite to the substrate. Irradiating at a plurality of positions on the substrate to expose the photosensitive material coated on the substrate, which is provided with a photomask holder for holding a mask provided with a plurality of mask patterns and a plurality of alignment marks And moving the mask to the substrate transport direction to select one of the plurality of alignment marks, wherein the plurality of mask patterns are formed at a certain arrangement pitch in a direction intersecting the transport direction of the substrate, The ultraviolet ray passes through; the structure of the plurality of alignment marks includes a pair of thin wires, and is disposed at a position opposite to the substrate transfer direction with respect to the plurality of mask patterns at a distance from each other in the substrate transfer direction, and The reference position preset between the pair of thin wires is formed in a state of being offset from each other by a predetermined distance in a direction intersecting the substrate transport direction, wherein The pair of thin wires have an interval equal to an integral multiple of the arrangement pitch of the plurality of patterns provided on the substrate in the direction in which the substrate conveyance direction intersects, and are formed in parallel in the substrate transfer direction; the line type camera is configured as a thin line The central axis of the long side of the photosensitive portion is aligned with a center line intersecting the substrate transport direction from the alignment mark selected from the plurality of alignment marks of the mask; and the alignment mechanism is configured to The photomask is relatively moved in the intersecting direction of the substrate transport direction, and the positional relationship between the reference position of the selected alignment mark and the reference position set in advance by the substrate is set in advance.

According to the above configuration, when the ultraviolet ray is irradiated to the position where the offset of the same type of substrate is shifted to the direction in which the substrate is conveyed, the reticle stage is moved in the substrate transport direction, and the substrate transfer direction is separated from each other. Selecting an appropriate alignment mark among the plurality of registration marks arranged at a certain distance, and using a line camera to capture a pair of thin lines parallel to the substrate transport direction of the alignment mark and a reference position on the substrate, according to the captured image The registration mechanism relatively moves the substrate and the mask in the intersecting direction of the substrate transport direction so that the positional relationship between the reference position of the alignment mark and the reference position of the substrate is set in advance. Therefore, even if the ultraviolet light is irradiated on the same type of substrate to the position where the substrate is in the direction intersecting the substrate transport direction, the exposure can be performed by selecting an appropriate alignment mark from the plurality of alignment marks. The interference between the pair of thin wires of the selected alignment mark and the pattern of the substrate is parallel to both edge portions in the substrate transport direction. Thus, a pair of thin lines of the selected alignment mark can be easily detected, so that the reference position of the alignment mark can be easily calculated. Therefore, the alignment mark selected from the plurality of alignment marks can be used to make the mask follow the moving substrate well.

Furthermore, in the state in which the reference position of the selected one of the plurality of registration marks set by the mask and the reference position set by the substrate are aligned, the selected alignment mark The pair of thin wires are arranged to be substantially aligned with a center line parallel to the substrate transport direction of the pixels provided on the substrate. Thereby, in a state in which the reference position of the selected alignment mark among the alignment marks and the reference position set by the substrate are aligned, the pair of thin lines of the selected alignment mark are arranged to be substantially The alignment is performed on the center line parallel to the substrate transport direction of the pixels provided on the substrate, thereby further reducing the interference between the pair of thin lines and the edge portions of the substrate disposed in the substrate transport direction. Therefore, a pair of thin line positions of the alignment mark selected from the plurality of alignment marks provided from the photomask are slightly apart from the pattern which is the farthest from the edge portions of the pattern disposed in the substrate parallel to the substrate transport direction. At the center position, interference between a pair of thin wires and both edge portions of the pattern can be avoided, so that the pair of thin wires can be detected more easily. Thus, the reference position of the reticle can be more easily calculated to positively align the reticle with the substrate, so that the ultraviolet ray can be irradiated with high precision to the target position set on the substrate.

Then, the mask is formed with a plurality of microlenses on the substrate side corresponding to the mask patterns. The ultraviolet rays are condensed on the substrate by using a plurality of microlenses formed on the substrate side corresponding to the respective mask patterns. Therefore, the power of the light source for exposure can be reduced, and the burden on the light source for exposure can be reduced to extend the life of the light source.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing an embodiment of a photomask according to the present invention, wherein (a) is a plan view and (b) is a cross-sectional view taken along line X-X of (a). The reticle 1 is provided with an array-shaped complex pattern at a certain arrangement pitch on the surface, and selectively illuminates the light at a plurality of positions on the substrate conveyed in a certain direction, and has a plurality of mask patterns 2 and a plurality of micro Lens 3 and complex alignment mark 4.

Furthermore, the use of the herein board system to arranging pitch _{P. 1} on the substrate indicated by the arrow A in FIG. 2 of the conveyance direction and to the arranging pitch P intersecting direction to the substrate conveying direction ₂ is provided with a plurality of patterns (hereinafter, referred to as "pixel 5 ”), for example, a data line 6 is formed along an edge portion of each of the pixels 5 that is parallel to the substrate transport direction, and an edge portion that intersects the substrate transport direction along the respective pixels 5 is formed, for example. A TFT substrate 8 of a gate line 7. In addition, the substrate transport outside the display area of the front side of the direction lines provided shutter front with a central position of the substrate conveying direction side of the source line L ₁ of the abbreviated 7 spaced apart from the cross-shaped notch mark 9 in order to enable the mask 1 and the TFT substrate 8 Pre-alignment. Here, if there is no nick mark 9, the alignment reference on the TFT substrate 8 side (for example, a predetermined specific data line 6) cannot be detected, and another data line 6 is erroneously detected, and the pixel is erroneously The cross direction of the substrate transport direction of 5 is shifted by the number of pitches of the arrangement pitch P ₂ in the same direction to perform alignment. Then, by providing the above-described scribe mark 9 on the TFT substrate 8, the pre-alignment of the reticle 1 and the TFT substrate 8 can be performed, and the specific data line 6 can be easily detected.

As shown in FIG. 1, the plurality of mask patterns 2 are used to selectively illuminate light at a predetermined plurality of positions (hereinafter referred to as "light irradiation target positions") on the TFT substrate 8, which are formed in a transparent manner. The light-shielding film 11 provided on the surface of the substrate 10 allows light to pass through the opening of a certain shape, and is arranged in an array corresponding to the arrangement pitch of the arrangement pitches P ₁ and P ₂ of the plurality of pixels 5 provided on the TFT substrate 8 The ground is formed in the substrate transport direction and the intersecting direction thereof. In the present embodiment, the plurality of mask patterns 2 are displayed in two rows of mask pattern rows 2A and 2B that intersect the substrate transport direction.

As shown in FIG. 1(b), the inner surface (the TFT substrate 8 side) of the transparent substrate 10 is provided with a plurality of microlenses 3. The plurality of microlenses 3 are used to condense light on a convex lens on the TFT substrate 8, and are arranged such that the optical axis is aligned with the center of each mask pattern 2.

The first to third viewing windows 12A, 12B, and 12C formed at positions opposite to the substrate transport direction indicated by the arrow A with respect to the plurality of mask patterns 2 are provided with first, second, and second portions, respectively. 3 alignment marks 4A, 4B, 4C. The first to third alignment marks 4A to 4C are used to move the mask 1 while following the moving TFT substrate 8 while being meandering, and to perform the light irradiation target position on the plurality of mask patterns 2 and the TFT substrate 8. The alignment is arranged such that the substrate transfer direction is spaced apart from each other by a distance L ₂ , and is formed as a central axis intersecting the substrate transfer direction of the first alignment mark 4A and a mask pattern row 2A on the front side in the substrate transfer direction. The long-side central axis constitutes the distance L ₃ .

Further, the first to third alignment marks 4A to 4C are provided with a thin line 4c obliquely intersecting the substrate conveyance direction between the pair of thin wires 4a and 4b, and the pair of thin wires 4a and 4b are provided. An interval nP ₂ (n is an integer of 1 or more) which is equal to an integral multiple of the arrangement pitch P ₂ in the direction in which the plurality of pixels 5 intersect with the substrate transfer direction, and is formed in parallel in the substrate transfer direction, and the second and third alignments The alignment reference position of the marks 4B and 4C (for example, the midpoint position between the pair of thin wires 4a and 4b) is formed so as to be offset from the reference position of the first registration mark 4A by the distance D in the direction of the substrate transfer direction. ₁ , the state of D ₂ .

In this case, the one thin wire 4c which obliquely intersects the substrate conveyance direction is used to make the alignment mark 4 of the photomask 1 when the photomask 1 of the present invention is used in a laser annealing apparatus or an exposure apparatus which will be described later. The center line intersecting the substrate transport direction can correctly face the long side of the elongated photosensitive portion 24 of the line type camera 17 (see FIG. 5) provided for detecting the reference position of the mask 1 and the reference position of the TFT substrate 8. The central axis. Specifically, the position of the pair of thin wires 4a and 4b and the oblique thin line 4c of the registration mark 4 is detected based on the one-dimensional image captured by the line camera 17, and the distance between the thin lines 4a and 4c and the thin lines 4c and 4b are calculated. The distance between the mask 1 and the reticle 1 is adjusted by moving the reticle 1 in the substrate transport direction to make the two distances equal.

Further, the oblique thin wires 4c can be used for detecting the gate lines 7 provided on the TFT substrate 8 in the same manner as described above. For example, the gate line 7 is imaged by the line camera 17 to calculate the partial size of the gate line 7 that is cut by the three thin lines 4a to 4c of the alignment mark 4. Then, when it is detected that the size between the thin wires 4a, 4c of the gate line 7 and the size between the thin wires 4c, 4b become equal, it can be detected that the gate line 7 is aligned with the alignment mark 4 and the substrate transport direction is The moment of the centerline of the cross direction. Then, when the gate line 7 is aligned with the center line of the alignment mark 4, the moving distance or the moving time of the TFT substrate 8 is measured, and when the moving distance or the moving time becomes a predetermined value. When laser light or ultraviolet light is irradiated, the light which is irradiated with laser light or ultraviolet rays on the TFT substrate 8 can be irradiated to the target position.

Further, the reference positions of the first to third alignment marks 4A to 4C are formed to have a constant positional relationship with the mask pattern 2. For example, in the present embodiment, as shown in FIG. 1, the first alignment mark 4A is formed so as to be aligned with the center line of the substrate transfer direction, and is aligned with the two masks adjacent to either of the mask pattern rows 2A and 2B. The midpoint position of the pattern 2 is formed, and the second alignment mark 4B is formed such that the center position thereof is offset from the center position of the first alignment mark 4A by a distance D ₁ = P _{2 in a} direction crossing the substrate conveyance direction. /2 status. Then, the center line of the second registration mark 4B parallel to the substrate conveyance direction is aligned with the center of any of the mask patterns 2. Further, the third registration mark 4C is formed such that the center position thereof is offset from the center position of the first registration mark 4A by a distance D ₂ = mP ₂ /4 (m is an odd number) in a direction crossing the substrate conveyance direction. The state of ). Then, the center line of the third registration mark 4C parallel to the substrate conveyance direction is aligned at a position shifted from the center of any of the mask patterns 2 to the direction in which the substrate conveyance direction is shifted by P ₂ /4.

Further, in the state in which the reference position of the alignment mark 4 selected from the first to third alignment marks 4A to 4C and the reference position set by the TFT substrate 8 are aligned, the selected pair is selected. The pair of thin wires 4a and 4b of the bit 4 are arranged so as to be substantially aligned with the center line of the pixel 5 parallel to the substrate transport direction. Then, in a state in which the alignment of the mask 1 and the TFT substrate 8 is performed using the alignment marks 4A to 4C, the pair of thin lines 4a and 4b of the alignment marks 4A to 4C are respectively positioned in the slave pixels 5. The left and right edge portions parallel to the substrate transport direction are located on a substantially center line of the pixel 5 which is sufficiently distant, so that the thin line 4a can be easily detected without interfering with the data line 6 provided along the edge portion of the pixel 5. 4b. Therefore, the calculation of the reference positions of the alignment marks 4A to 4C can be easily performed.

Further, the reference position of each of the alignment marks 4A to 4C is not limited to the midpoint position between the pair of thin wires 4a and 4b, and may be set at a position that divides the position between the pair of thin wires 4a and 4b at a constant ratio, or may be one. Any one of the thin wires 4a and 4b is set as a reference position.

In the above embodiment, the case where the microlens 3 is provided on the TFT substrate 8 side in accordance with the mask pattern 2 has been described. However, the present invention is not limited thereto, and the microlens 3 may not be provided. In the case of the laser annealing using the photomask 1 of the present invention, since the laser energy can be concentrated, the provision of the microlens 3 is more effective. Further, in the case of exposure, it is not always necessary to provide the microlens 3. However, when the microlens 3 is provided, the mask pattern 2 can be contracted onto the substrate, so that the decomposition ability of the exposure pattern can be improved.

Further, in the above-described embodiment, the case where the two rows of mask pattern rows 2A and 2B are provided has been described. However, the present invention is not limited thereto, and one or three or more rows of mask pattern columns may be provided. .

Next, a description will be given of a laser annealing apparatus using the reticle 1 of the present invention. Fig. 3 is a partial cross-sectional plan view showing a schematic configuration of a laser annealing apparatus of the present invention. In the laser annealing apparatus, for example, the TFT substrate 8 in which the array-shaped plurality of pixels 5 are arranged at a predetermined arrangement pitch and is conveyed in the direction of the arrow A is aligned with the mask 1 disposed opposite to the TFT substrate 8. The laser light 21 is selectively irradiated on the TFT substrate 8 at a plurality of positions to anneal and agglomerate the amorphous thin film formed by the TFT substrate 8, and is provided with a transport mechanism 13 and a laser light source 14. The coupling optical system 15, the mask table 16, the line camera 17, the alignment mechanism 18, and the control mechanism 19 are configured.

The transport mechanism 13 is configured such that the TFT substrate 8 is placed on the upper surface thereof and is transported at a constant speed in the direction of the arrow A shown in FIG. 3, and is provided with a plurality of discharge holes on which gas is to be ejected and which attracts gas. In the gas table 20 of the suction hole, the TFT substrate 8 is held by the transfer roller (not shown) while the TFT substrate 8 is floated by a certain amount on the gas table 20 by the balance of the discharge and the suction of the gas. The end edges of the 8 are transported, and a position sensor or a speed sensor (not shown) is provided.

A laser light source 14 is provided above the transport mechanism 13. The laser source 14 emits a pseudo-electron laser such as laser light 21 having a wavelength of 308 nm or 353 nm at a repetition period of, for example, 50 Hz.

The coupling optical system 15 is disposed in the light path of the laser light 21 emitted by the above-described laser light source 14. The coupling optical system 15 expands the beam diameter of the laser beam 21 to uniformly distribute the intensity distribution in the cross section of the beam to the reticle 1, and is configured by, for example, a plurality of fly-eye lenses or a plurality of condensing lenses.

The mask stage 16 is provided on the downstream side in the traveling direction of the laser light 21 of the coupling optical system 15. The mask stage 16 is close to the TFT substrate 8 for holding the mask 1, and an opening portion 22 is formed in a central portion thereof to sandwich the peripheral portion of the mask 1. Then, by the drive mechanism 23 such as a motor, it is possible to move in the directions of arrows B and C shown in FIG.

Among the first to third viewing windows 12A to 12C of the mask 1 held by the mask unit 16, a pair of viewing windows (the second viewing window 12B in FIG. 3) are disposed on the side of the transport mechanism 13 Type camera 17. The line type camera 17 penetrates the TFT substrate 8 from below to photograph the surface thereof and the alignment mark 4 of the mask 1, and outputs the one-dimensional image, which is formed by linearly arranging a plurality of photosensitive elements. The elongated photosensitive portion 24 (refer to FIG. 5) is disposed such that the central axis of the long side of the photosensitive portion 24 is aligned with the alignment mark 4 selected from the first to third alignment marks 4A to 4C (FIG. 3). A center line intersecting the substrate conveyance direction in the case where the second registration mark 4B is selected is displayed.

Further, the illumination source 25 is provided above the mask table 16 for the line camera 17, and the imaging position of the line camera 17 can be illuminated.

A registration mechanism 18 that moves the mask stage 16 in the intersecting direction of the substrate transport direction is provided. The alignment mechanism 18 is for aligning the TFT substrate 8 with the reticle 1, and is constituted by, for example, a linear motor, an electromagnetic actuator, or a rail and a motor.

A control mechanism 19 connected to the transport mechanism 13, the laser light source 14, the mask table 16, the line camera 17, and the alignment mechanism 18 is provided. The control unit 19 moves the mask 1 in the substrate transport direction in accordance with a predetermined plurality of annealing target positions on the TFT substrate 8, and selects one of the first to third alignment marks 4A to 4C. After the alignment of the pair of marks 4 with the reference position set in advance on the TFT substrate 8, the laser beam 21 is irradiated onto the mask 1 to anneal the target position of the plurality of annealing on the substrate, as shown in FIG. The image processing unit 26, the memory 27, the calculation unit 28, the transport mechanism drive controller 29, the reticle stage drive controller 30, the aligning mechanism drive controller 31, and the laser light source drive controller 32 are provided as shown. Control unit 33.

Here, the image processing unit 26 immediately processes the one-dimensional image captured by the line camera 17 to detect the luminance change in the longitudinal direction of the elongated photosensitive portion 24 of the line camera 17 to detect the setting of the data line 6 of the TFT substrate 8. The position of the reference position and the position of the pair of thin wires 4a and 4b of the registration mark 4 of the mask 1 and the change in the luminance of the substrate transfer direction in the output of the line camera 17 are used to detect the sum of the score marks 9 of the TFT substrate 8. The substrate transport direction is a thin line 9a (refer to FIG. 2).

Further, the memory 27 memorizes the distances L ₂ and L ₃ set by the mask 1 (refer to FIG. 1), the distances L ₁ and P ₁ set by the TFT substrate 8 (refer to FIG. 2), and corresponds to the first 1~ The alignment target values Ds ₁ and Ds _{2 of} the third alignment mark 4A to 4C, and the thin line 9a of the scotch mark 9 of the TFT substrate 8 which intersects with the substrate conveyance direction, and the TFT substrate 8 until the laser light source 14 is turned on The target value Ls of the distance is moved, and the calculation result in the calculation unit 28 described later is temporarily memorized. Further, the alignment target value Ds ₁ is a distance target value between the reference position of the registration mark 4 and the center position of the score mark 9 of the substrate, and the target value Ds ₂ is set by the reference position of the registration mark 4 and the substrate. The distance target value between the reference position (for example, the center position of the specific data line 6).

Further, the calculation unit 28 calculates the distance D between the reference position of the TFT substrate 8 detected by the image processing unit 26 and the reference position of the alignment mark 4 selected in the mask 1, and based on the position of the transport mechanism 13. The output of the sensor is used to calculate the moving distance L of the TFT substrate 8.

Then, the transport mechanism drive controller 29 controls the drive of the transport mechanism 13 by a pulse of a predetermined period so that the TFT substrate 8 can be transported at a predetermined speed.

Further, the mask stage drive controller 30 is configured to move the mask stage 16 in the directions of arrows B and C of FIG. 3 to select one of the first to third alignment marks 4A to 4C formed by the mask 1. The registration mark 4 is capable of driving the drive mechanism 23 provided by the mask table 16.

Further, the registration mechanism drive controller 31 compares the distance D between the reference position of the TFT substrate 8 calculated by the calculation unit 28 and the reference position of the alignment mark 4 selected in the mask 1 with the slave memory. The read target values Ds ₁ and Ds ₂ are read by 27, and the registration mechanism 18 is driven to move the mask 1 in the intersecting direction of the substrate transport direction so as to match the two.

Furthermore, the laser light source drive controller 32 is used to control the opening and closing of the laser light source 14. Then, the control unit 33 integrates the entire control to appropriately operate the above-described constituent elements.

Next, the operation of the above-structured laser annealing apparatus will be described.

First, the memory 27 of the control unit 19 memorizes the required information and becomes the initial setting. Further, the drive mechanism 23 of the mask stage 16 is driven by the mask stage drive controller 30 of the control unit 19 to move the mask stage 16 by a distance L ₂ in the direction of the arrow B shown in FIG. Thereby, the first viewing window 12A is positioned above the line type camera 17 to select the first registration mark 4A.

In this case, the image processing unit 26 detects one of the first alignment marks 4A from the luminance change in the longitudinal direction of the elongated photosensitive portion 24 of the line camera 17 based on the one-dimensional image captured by the line camera 17. The position of the 4b and the oblique thin line 4c is calculated by the calculation unit 28 to calculate the distance between the thin lines 4a and 4c and the distance between the thin lines 4c and 4b, and the reticle stage controller 16 is used to finely adjust the reticle stage 16 In the substrate transport direction, the two distances are equal to each other, so that the center axis of the long side of the light-receiving portion 24 of the line camera 17 and the center line of the first alignment mark 4A of the mask 1 in the direction intersecting with the substrate transport direction are correctly performed. Counterpoint.

Next, the transport mechanism 13 mounts the TFT substrate 8 on which the amorphous germanium film is formed on the upper surface of the gas table 20, and causes the score mark 9 shown in FIG. 2 to be the substrate transfer shown by the arrow A in FIG. In the state of the front side of the direction, the conveyance starts in the direction of the arrow A at a constant speed.

When the TFT substrate 8 is transported so that the score mark 9 reaches the lower side of the first viewing window 12A formed by the mask 1, the line camera 17 starts photographing, and the line image camera 17 outputs the captured image at regular time intervals. The captured image is input to the image processing unit 26 of the control unit 19 to perform image processing, and the luminance of the longitudinal direction of the elongated photosensitive portion 24 of the line camera 17 is changed to detect the nick mark 9 of the TFT substrate 8. The position of the thin line 9b (refer to FIG. 2) parallel to the substrate transport direction, and the position of one of the first alignment marks 4A to the thin lines 4a and 4b.

In the calculation unit 28, the position information of the thin line 9b of the first alignment mark 4A and the position information of the thin line 4a, 4b of the first registration mark 4A are calculated based on the position information of the thin line 9b of the above-described score mark 9 detected by the image processing unit 26. The thin line 9b of 9 is parallel to the distance D between the center line of the substrate transport direction and the reference position (for example, the center position) of the first alignment mark 4A, and is matched with the alignment target value Ds ₁ stored in the memory 27. Comparison.

Next, the alignment mechanism drives the drive controller 31 controls mechanism 18 to the alignment of the mask 1 to the arrow E in FIG. 5, F direction, so that the distance D coincides with the target value Ds for bit _1, the TFT for The substrate 8 is pre-aligned with the reticle 1.

Further, the image processing unit 26 processes the one-dimensional image captured by the line camera 17 and detects the thin line 9a of the notch mark 9 that intersects the substrate conveyance direction by changing the luminance along the substrate conveyance direction. Further, in the calculation unit 28, after the thin line 9a is detected based on the output of the position sensor provided in the transport mechanism 13, the movement distance L of the TFT substrate 8 is calculated, and the distance L is compared with the memory 27. The moving distance of the TFT substrate 8 is a target value Ls (in the present embodiment, Ls = L ₁ + L ₃ ), and when they are identical, the complex data line 6 and the complex gate line 7 of the TFT substrate 8 are as shown in FIG. When the intersection portion is aligned with the center of the plurality of mask patterns 2 of the mask 1, the opening command of the laser light source 14 is output to the laser light source drive controller 32.

When the laser light source drive controller 32 receives the above-described opening command, the laser light source 14 is turned on for a specific time. Thereby, as shown in FIG. 7, the laser light 21 is condensed on the intersection of the data line 6 of the TFT substrate 8 and the gate line 7 by the microlens 3 of the mask 1, to be amorphous to the intersection portion. The ruthenium film is annealed and polymerized.

Then, in the same manner as described above, the data line 6 of the TFT substrate 8 which is close to the reference position set in advance by the light-receiving portion 24 of the line camera 17 is selected as the specific data line 6 based on the captured image captured by the line camera 17, and The position of the specific data line 6 and the position of one of the first alignment marks 4A to the thin lines 4a and 4b are detected. Then, the distance D between the center line of the specific data line 6 and the reference position (for example, the center position) of the first registration mark 4A is calculated, and the alignment mechanism 18 is driven to bring the mask 1 to the arrow E shown in FIG. The F direction is moved so that the distance D coincides with the registration target value Ds ₂ memorized by the memory 27, and the alignment of the TFT substrate 8 with the reticle 1 is performed. Thereby, the photomask 1 can follow the moving TFT substrate 8.

At this time, as shown in FIG. 7, the pair of thin wires 4a and 4b of the first alignment mark 4A are located farthest from the edge portions of the pixel 5 of the TFT substrate 8 which are parallel to the substrate transport direction (arrow A direction). It is parallel to the center line in the direction of arrow A. Therefore, the pair of thin wires 4a, 4b are not interfered with the data line 6 provided along the edge portion of the pixel 5, and can be easily detected. Therefore, the reference position of the first registration mark 4 can be easily calculated, and the mask 1 can accurately follow the moving TFT substrate 8.

In this way, while the TFT substrate 1 to follow the movement of the mask 8, when the side of the TFT substrate 8 is moved whenever 2P ₁ (P ₁ is the pixel substrate 5 with the conveying direction of the column pitch), by laser light source drive controller 32 to turn on the laser light source 14 for a certain period of time. Thereby, the amorphous germanium film of all the annealing target positions 34 on the TFT substrate 8 can be annealed and aggregated.

Next, a description will be given of a case where the same mask 1 is used for the laser annealing treatment on the TFT substrate 8 of the different annealing target positions 34.

In this case, when the annealing target position 34 of the pixel 5 is positioned on the gate line 7 aligned with the center line parallel to the substrate carrying direction (arrow A direction) as shown in FIG. 8, the photomask 1 is placed on the substrate. The intersecting direction of the transport direction (the direction of the arrow A) may be a half-pitch (P ₂ /2) of the arrangement pitch P ₂ of the pixels 5 in the same direction.

However, at this time, as shown in FIG. 8, since the pair of thin wires 4a and 4b of the first alignment mark 4A interfere with the data line 6 of the TFT substrate 8, the above-described thin wires 4a, 4b cannot be used by the line type camera 17 and The data lines 6 are separated and the thin lines 4a, 4b are detected. Therefore, the reference position of the first registration mark 4A cannot be calculated, and the mask 1 cannot be caused to follow the moving TFT substrate 8.

Therefore, in the above case, the present invention drives the drive mechanism 23 by the reticle stage drive controller 30 to move the reticle stage 16 in the direction of the arrow C shown in FIG. 3 by a distance L ₂ , and by the line type camera 17 The detected registration mark 4 is switched from the first registration mark 4A to the second registration mark 4B. Here, since the second registration mark 4B is provided such that the first registration mark 4A is shifted in the direction in which the first alignment mark 4A is shifted in the direction of the substrate conveyance (the direction of the arrow A), D ₁ = P ₂ /2, the second alignment mark 4B is The pair of thin wires 4a and 4b are positioned on the center line of the pixel 5 parallel to the plate transport direction (arrow A direction) as shown in Fig. 8, and the second alignment mark 4B is easily detected. Therefore, the second alignment mark 4B can be used to cause the mask 1 to follow the moving TFT substrate 8, and even if the annealing target position 34 is different from the TFT substrate 8, the same mask 1 can be used for positional accuracy. Good annealing treatment.

Further, in the case where the annealing treatment is performed on the target position different from any of the annealing target positions 34, the third alignment mark 4C formed in the mask 1 corresponding to the target position may be selected. In this case, when the alignment of the TFT substrate 8 and the reticle 1 is performed, the pair of thin wires 4a, 4b of the third alignment mark 4C are positioned at both edges away from the pixel 5 in the direction parallel to the substrate transport direction. In the middle of the pixel 5 of the portion, the pair of thin wires 4a and 4b and the data line 6 do not interfere, and the third alignment mark 4C can be easily detected to cause the mask 1 to follow the moving TFT substrate 8.

Further, in the above embodiment, the case where the substrate is the TFT substrate 8 has been described. However, the present invention is not limited thereto, and the film coated on the surface may be annealed as long as the laser light 21 is irradiated onto the substrate at a plurality of positions. It can be any substrate.

Further, although the above embodiment has been described with respect to the case where the photomask 1 of the present invention is used in a laser annealing apparatus, it is not limited to the laser annealing apparatus, and may be applied to an exposure apparatus for exposing the photosensitive material applied to the substrate. . In this case, the laser light source 14 of the above-described laser annealing apparatus may be replaced by a xenon lamp that emits ultraviolet rays, an ultrahigh pressure mercury lamp, or an exposure light source that emits a laser light source that emits ultraviolet light. Thereby, the mask 1 can be moved in the substrate transport direction corresponding to the plurality of exposure target positions on the substrate, and a pair of bit marks 4 can be selected from the plurality of registration marks 4 to perform the reference of the pair of bit marks 4. After the position is aligned with a predetermined reference position on the substrate, the mask 1 is irradiated with ultraviolet rays to expose the plurality of exposure target positions on the substrate.

In this case, as long as the mask pattern row of the plurality of rows is provided in the mask 1, the exposure target position on the front side in the substrate transport direction is aligned with the mask on the front side in the substrate transport direction among the plurality of mask pattern rows of the mask 1. Each of the mask patterns 2 of the pattern row is irradiated with ultraviolet rays for a certain period of time, and thereafter, each time the substrate moves at a distance equal to the arrangement pitch P ₁ of the substrate pattern 2 in the substrate transfer direction, the ultraviolet rays are irradiated for a certain period of time. The above exposure target position is multiple exposure. Thus, the power of the light source for exposure can be reduced, and the burden of the light source can be reduced, thereby prolonging the life of the light source.

In the above description, the case where the mask 1 is moved in the direction in which the substrate is conveyed in the direction in which the substrate 1 is moved is described. However, the present invention is not limited thereto, and the substrate may be moved. Side, or move both the reticle 1 and the substrate.

D, D ₁ , D ₂ , L ₁ , L ₂ , L ₃ . . . distance

Ds ₁ , Ds ₂ . . . Alignment target value

Ls. . . Moving distance target value

P ₁ , P ₂ . . . spacing

1. . . Mask

2. . . Mask pattern

2A, 2B. . . Mask pattern column

3. . . Microlens

4. . . Alignment mark

4A, 4B, 4C. . . 1st to 3rd alignment marks

4a, 4b, 4c. . . Thin line

5. . . Pixel

6. . . Data line

7. . . Gate line

8. . . TFT substrate

9. . . Scoring mark

9a, 9b. . . Thin line

10. . . Transparent substrate

11. . . Sunscreen

12A, 12B, 12C. . . 1st to 3rd viewing windows

13. . . Transport agency

14. . . Laser source

15. . . Coupling optical system

16‧‧‧mask table

17‧‧‧Linear camera

18‧‧‧ aligning agency

19‧‧‧Control agency

20‧‧‧ gas station

21‧‧‧Laser light

22‧‧‧ Openings

23‧‧‧ drive mechanism

24‧‧‧Photosensitive Department

25‧‧‧Light source for illumination

26‧‧‧Image Processing Department

27‧‧‧ memory

28‧‧‧ Calculation Department

29‧‧‧Transport mechanism drive controller

30‧‧‧Photomask drive controller

31‧‧‧ Alignment mechanism drive controller

32‧‧‧Laser light source drive controller

33‧‧‧Control Department

34‧‧‧ Annealing target position

Fig. 1 is a view showing an embodiment of a photomask according to the present invention, wherein (a) is a plan view and (b) is a cross-sectional view taken along line X-X of (a).

2 is a plan view showing a schematic configuration of a TFT substrate.

Fig. 3 is a partial cross-sectional plan view showing a schematic configuration of a laser annealing apparatus of the present invention.

Fig. 4 is a block diagram showing the structure of a control mechanism of the above-described laser annealing apparatus.

Fig. 5 is a plan view for explaining the pre-alignment of the TFT substrate and the photomask using the notch marks provided on the TFT substrate.

Fig. 6 is a plan view showing the reticle for a moving TFT substrate.

Fig. 7 is an explanatory view showing the positional relationship between the annealing target position of the TFT substrate and the first alignment mark of the photomask.

Fig. 8 is an explanatory view showing the positional relationship between the other annealing target position of the TFT substrate and the second alignment mark of the photomask.

D ₁ , D ₂ , L ₁ , L ₂ , L ₃ . . . distance

P ₁ , P ₂ . . . spacing

1. . . Mask

2. . . Mask pattern

2A, 2B. . . Mask pattern column

3. . . Microlens

4. . . Alignment mark

4A, 4B, 4C. . . 1st to 3rd alignment marks

4a, 4b, 4c. . . Thin line

10. . . Transparent substrate

11. . . Sunscreen

12A, 12B, 12C. . . 1st to 3rd viewing windows

Claims (10)

A reticle is provided with an array-shaped plurality of patterns on a surface at a certain arrangement pitch, and selectively illuminates light at a plurality of positions on a substrate conveyed in a certain direction, and is characterized in that: a plurality of mask patterns are provided Forming a predetermined arrangement pitch in a direction intersecting the transport direction of the substrate to allow light to pass through; and a plurality of alignment marks having a pair of thin lines in a substrate transport direction relative to the plurality of mask patterns Arranged at a distance from the substrate transport direction at a predetermined distance from each other, and a predetermined reference position between the pair of thin lines is mutually offset in a direction intersecting the substrate transport direction. In the state of the distance, the pair of thin wires have an interval equal to an integral multiple of the arrangement pitch of the plurality of patterns provided on the substrate in a direction intersecting the substrate transport direction, and are formed in parallel in the substrate transport direction. . The reticle of claim 1, wherein the selected pair is in a state in which a reference position of the selected one of the plurality of registration marks is aligned with a reference position set by the substrate The pair of thin wires of the bit marks are arranged to be aligned with the parallel center lines of the substrate transfer directions of the two patterns separated from the substrate transfer direction, respectively, in the plurality of patterns provided on the substrate. The photomask of claim 1 is characterized in that a plurality of microlenses are formed on the substrate side corresponding to the mask patterns. The reticle according to any one of claims 1 to 3, wherein the plurality of mask patterns are formed in an array arrangement direction in a substrate arrangement direction and a crossing direction thereof at a certain arrangement pitch. A laser annealing device is a substrate in which an array of a plurality of patterns is arranged at a certain arrangement pitch and is transported in a certain direction, and is aligned with a mask disposed opposite to the substrate to selectively select laser light. Irradiating the plurality of films on the substrate to anneal the film formed on the substrate, wherein the photomask is provided with a photomask provided with a plurality of mask patterns and a plurality of alignment marks. And moving the reticle to the substrate transport direction to select a align mark from the plurality of aligning marks; the plurality of mask patterns are formed at a certain arrangement pitch in a direction intersecting the transport direction of the substrate The laser beam passes through; the structure of the plurality of alignment marks includes a pair of thin wires, and is disposed at a position opposite to the substrate transport direction with respect to the plurality of mask patterns at a distance from each other in the substrate transport direction, and The reference position set in advance between the pair of thin wires is formed in a state of being offset from each other by a predetermined distance in a direction intersecting the substrate conveying direction. In the pair of thin line-based pattern having a plurality of equivalent of the substrate disposed on the substrate as a multiple of the conveying direction of the whole cross direction of arranging spacer pitch, is formed in parallel to the The substrate transport direction is a linear camera in which the center axis of the long side of the thin line-shaped light-receiving portion is aligned with the center line of the alignment mark selected from the plurality of registration marks of the photo-shield in the direction intersecting the substrate transport direction. And a aligning mechanism that relatively moves the substrate and the reticle in a direction in which the reticle is moved in the direction in which the substrate is conveyed, so that the positional relationship between the reference position of the selected alignment mark and the reference position set in advance by the substrate becomes Pre-set relationship. The laser annealing apparatus of claim 5, wherein the reference position of the selected one of the plurality of alignment marks set by the mask and the reference position set by the substrate are aligned In the state, the pair of thin wires of the selected alignment mark are arranged to be respectively aligned in the plurality of patterns provided on the substrate, and are parallel to the substrate transfer direction of the two patterns separated from the direction in which the substrate is conveyed. Center line. A laser annealing apparatus according to claim 5 or 6, wherein the mask is formed with a plurality of microlenses on the substrate side corresponding to the mask patterns. An exposure apparatus for selectively illuminating ultraviolet light by aligning a substrate in which a plurality of patterns are arranged on a surface in a predetermined arrangement and transported in a certain direction, and a photomask disposed opposite to the substrate At a plurality of positions on the substrate, the photosensitive material coated on the substrate is exposed, and is characterized by: The reticle stage maintains a reticle provided with a plurality of mask patterns and a plurality of alignment marks, and moves the reticle to the substrate transport direction to select a registration mark from the plurality of alignment marks, the plurality of masks The pattern is formed at a predetermined arrangement pitch in a direction intersecting the transport direction of the substrate to allow ultraviolet rays to pass through; the structure of the plurality of alignment marks is provided with a pair of thin lines, and the plurality of mask patterns are mutually transported in the substrate transfer direction The ground is disposed at a position opposite to the substrate transport direction at a predetermined distance, and the predetermined reference position between the pair of thin wires is offset from each other by a predetermined distance in a direction intersecting the substrate transport direction. Formed in a state in which the pair of thin wires have an interval equal to an integral multiple of an arrangement pitch of the plurality of patterns provided on the substrate in a direction intersecting the substrate transport direction, and are formed in parallel in the substrate transport direction; The linear camera is configured such that the long-side central axis of the thin-line photosensitive portion is aligned with the alignment selected from the plurality of alignment marks of the photomask a center line intersecting the substrate transport direction; and a registration mechanism for relatively moving the substrate and the mask in a direction in which the substrate is conveyed, so that the reference position of the selected alignment mark is The positional relationship of the reference position set in advance by the substrate is set in advance. An exposure apparatus according to claim 8 wherein a selected one of the plurality of alignment marks set by the mask is selected In a state in which the reference position of the mark and the reference position set by the substrate are aligned, a pair of thin lines of the selected alignment mark are arranged to be respectively aligned with the plural pattern set on the substrate, and the bit is separated from The parallel center line of the substrate transfer direction of the two patterns in the direction in which the substrate transfer directions intersect. The exposure apparatus of claim 8 or 9, wherein the reticle is formed with a plurality of microlenses on the substrate side corresponding to the mask patterns.