KR101758382B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR101758382B1
KR101758382B1 KR1020110044979A KR20110044979A KR101758382B1 KR 101758382 B1 KR101758382 B1 KR 101758382B1 KR 1020110044979 A KR1020110044979 A KR 1020110044979A KR 20110044979 A KR20110044979 A KR 20110044979A KR 101758382 B1 KR101758382 B1 KR 101758382B1
Authority
KR
South Korea
Prior art keywords
spiral inductor
straight line
center
node
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020110044979A
Other languages
English (en)
Korean (ko)
Other versions
KR20110126061A (ko
Inventor
다까노리 히로따
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20110126061A publication Critical patent/KR20110126061A/ko
Application granted granted Critical
Publication of KR101758382B1 publication Critical patent/KR101758382B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
KR1020110044979A 2010-05-14 2011-05-13 반도체 장치 Active KR101758382B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-112012 2010-05-14
JP2010112012A JP5494214B2 (ja) 2010-05-14 2010-05-14 半導体装置

Publications (2)

Publication Number Publication Date
KR20110126061A KR20110126061A (ko) 2011-11-22
KR101758382B1 true KR101758382B1 (ko) 2017-07-14

Family

ID=44911242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110044979A Active KR101758382B1 (ko) 2010-05-14 2011-05-13 반도체 장치

Country Status (4)

Country Link
US (1) US8624683B2 (enExample)
JP (1) JP5494214B2 (enExample)
KR (1) KR101758382B1 (enExample)
CN (1) CN102355217B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9735102B2 (en) * 2015-03-18 2017-08-15 Globalfoundries Singapore Pte. Ltd. High voltage device
US9929123B2 (en) * 2015-06-08 2018-03-27 Analog Devices, Inc. Resonant circuit including bump pads
JP6798778B2 (ja) 2015-10-26 2020-12-09 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
JP6606970B2 (ja) * 2015-10-26 2019-11-20 セイコーエプソン株式会社 発振回路、発振モジュール、電子機器及び移動体
JP6672698B2 (ja) * 2015-10-26 2020-03-25 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
US10547274B2 (en) 2015-10-26 2020-01-28 Seiko Epson Corporation Oscillation module, electronic device, and moving object
US11018157B2 (en) 2017-09-28 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Local interconnect structure
JP7183699B2 (ja) * 2018-10-29 2022-12-06 セイコーエプソン株式会社 発振器、電子機器及び移動体
JP7064524B2 (ja) * 2020-03-19 2022-05-10 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
WO2022165670A1 (zh) * 2021-02-03 2022-08-11 香港中文大学（深圳） 芯片的制造方法、冗余金属的填充方法、芯片和计算机可读存储介质
US12451428B2 (en) 2021-06-10 2025-10-21 Samsung Electronics Co., Ltd. Integrated circuit including high-speed device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156681A1 (en) * 2004-01-20 2005-07-21 Koji Takinami Voltage controlled oscillator

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335487A (ja) * 1992-05-28 1993-12-17 Rohm Co Ltd 伝送回路素子
US5952893A (en) * 1998-03-06 1999-09-14 International Business Machines Corporation Integrated circuit inductors for use with electronic oscillators
JP2003124743A (ja) * 2001-10-16 2003-04-25 Oki Electric Ind Co Ltd 電圧制御発振回路
JP4010818B2 (ja) * 2002-02-01 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
US6911870B2 (en) * 2002-08-02 2005-06-28 Agere Systems, Inc. Quadrature voltage controlled oscillator utilizing common-mode inductive coupling
JP2005006153A (ja) * 2003-06-13 2005-01-06 Nec Electronics Corp 電圧制御発振器
JP2005079397A (ja) * 2003-09-01 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置
JP2005236959A (ja) * 2004-01-20 2005-09-02 Matsushita Electric Ind Co Ltd 電圧制御発振器
JP4932147B2 (ja) * 2004-09-30 2012-05-16 三菱電機株式会社 半導体集積回路
JP2006211529A (ja) * 2005-01-31 2006-08-10 Seiko Epson Corp 電圧制御発振器
JP2007059878A (ja) * 2005-07-27 2007-03-08 Seiko Epson Corp 半導体装置、及び発振器
JP2010045133A (ja) * 2008-08-11 2010-02-25 Toshiba Corp 半導体集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156681A1 (en) * 2004-01-20 2005-07-21 Koji Takinami Voltage controlled oscillator

Also Published As

Publication number Publication date
US20110279186A1 (en) 2011-11-17
JP2011243622A (ja) 2011-12-01
CN102355217B (zh) 2016-01-20
KR20110126061A (ko) 2011-11-22
JP5494214B2 (ja) 2014-05-14
US8624683B2 (en) 2014-01-07
CN102355217A (zh) 2012-02-15

Similar Documents

Publication Publication Date Title
KR101758382B1 (ko) 반도체 장치
Lee et al. A 40-Gb/s clock and data recovery circuit in 0.18-μm CMOS technology
US7538603B2 (en) Signal distribution architecture and semiconductor device
US10367514B2 (en) Passive phased injection locked circuit
Frans et al. A 40-to-64 Gb/s NRZ transmitter with supply-regulated front-end in 16 nm FinFET
US7057435B2 (en) Distributed delay-locked-based clock and data recovery systems
US20060158270A1 (en) Electronic circuit including at least one first and one second differential pair with the transistors sharing one and the same well
JP2005006153A (ja) 電圧制御発振器
US7173498B2 (en) Reducing the coupling between LC-oscillator-based phase-locked loops in flip-chip ASICs
CN107565934B (zh) 环形压控振荡器及锁相环
CN113557662B (zh) 一种振荡器以及时钟电路
US20050265053A1 (en) Oscillator and semiconductor device
JP6981097B2 (ja) ４相発振回路及びｃｄｒ回路
JP2012509609A (ja) 電圧制御発振器を用いた方法及び配置
KR100982037B1 (ko) 신호 생성 장치
US8120429B1 (en) Voltage-controlled oscillator methods and apparatus
CN100411305C (zh) 用于压控振荡器的可消除时钟穿通效应的切换式电容电路
US20050206465A1 (en) Voltage control oscillator
US8502348B2 (en) Differential varactor device
US6703905B2 (en) Crystal oscillation circuit
US20130141178A1 (en) Injection Locked Divider with Injection Point Located at a Tapped Inductor
JP2006147961A (ja) 半導体集積回路
Takamiya et al. A 6.7-fF//spl mu/m/sup 2/bias-independent gate capacitor (BIGCAP) with digital CMOS process and its application to the loop filter of a differential PLL
Levantino et al. Differentially-tuned VCO with reduced tuning sensitivity and flicker noise up-conversion
TWI513011B (zh) 差動可變電容元件

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20110513

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160316

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20110513

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20161027

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20170420

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170710

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170710

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20200701

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20220630

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20230320

Start annual number: 7

End annual number: 7