CN102355217B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN102355217B
CN102355217B CN201110129731.2A CN201110129731A CN102355217B CN 102355217 B CN102355217 B CN 102355217B CN 201110129731 A CN201110129731 A CN 201110129731A CN 102355217 B CN102355217 B CN 102355217B
Authority
CN
China
Prior art keywords
spiral inductor
straight line
center
coupled
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110129731.2A
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English (en)
Chinese (zh)
Other versions
CN102355217A (zh
Inventor
广田尊则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN102355217A publication Critical patent/CN102355217A/zh
Application granted granted Critical
Publication of CN102355217B publication Critical patent/CN102355217B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
CN201110129731.2A 2010-05-14 2011-05-13 半导体器件 Expired - Fee Related CN102355217B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-112012 2010-05-14
JP2010112012A JP5494214B2 (ja) 2010-05-14 2010-05-14 半導体装置

Publications (2)

Publication Number Publication Date
CN102355217A CN102355217A (zh) 2012-02-15
CN102355217B true CN102355217B (zh) 2016-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110129731.2A Expired - Fee Related CN102355217B (zh) 2010-05-14 2011-05-13 半导体器件

Country Status (4)

Country Link
US (1) US8624683B2 (enExample)
JP (1) JP5494214B2 (enExample)
KR (1) KR101758382B1 (enExample)
CN (1) CN102355217B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9735102B2 (en) * 2015-03-18 2017-08-15 Globalfoundries Singapore Pte. Ltd. High voltage device
US9929123B2 (en) * 2015-06-08 2018-03-27 Analog Devices, Inc. Resonant circuit including bump pads
JP6798778B2 (ja) 2015-10-26 2020-12-09 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
JP6606970B2 (ja) * 2015-10-26 2019-11-20 セイコーエプソン株式会社 発振回路、発振モジュール、電子機器及び移動体
JP6672698B2 (ja) * 2015-10-26 2020-03-25 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
US10547274B2 (en) 2015-10-26 2020-01-28 Seiko Epson Corporation Oscillation module, electronic device, and moving object
US11018157B2 (en) 2017-09-28 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Local interconnect structure
JP7183699B2 (ja) * 2018-10-29 2022-12-06 セイコーエプソン株式会社 発振器、電子機器及び移動体
JP7064524B2 (ja) * 2020-03-19 2022-05-10 セイコーエプソン株式会社 発振モジュール、電子機器及び移動体
WO2022165670A1 (zh) * 2021-02-03 2022-08-11 香港中文大学（深圳） 芯片的制造方法、冗余金属的填充方法、芯片和计算机可读存储介质
US12451428B2 (en) 2021-06-10 2025-10-21 Samsung Electronics Co., Ltd. Integrated circuit including high-speed device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335487A (ja) * 1992-05-28 1993-12-17 Rohm Co Ltd 伝送回路素子
US5952893A (en) * 1998-03-06 1999-09-14 International Business Machines Corporation Integrated circuit inductors for use with electronic oscillators
JP2003124743A (ja) * 2001-10-16 2003-04-25 Oki Electric Ind Co Ltd 電圧制御発振回路
JP4010818B2 (ja) * 2002-02-01 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
US6911870B2 (en) * 2002-08-02 2005-06-28 Agere Systems, Inc. Quadrature voltage controlled oscillator utilizing common-mode inductive coupling
JP2005006153A (ja) * 2003-06-13 2005-01-06 Nec Electronics Corp 電圧制御発振器
JP2005079397A (ja) * 2003-09-01 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置
JP2005236959A (ja) * 2004-01-20 2005-09-02 Matsushita Electric Ind Co Ltd 電圧制御発振器
US20050156681A1 (en) * 2004-01-20 2005-07-21 Koji Takinami Voltage controlled oscillator
JP4932147B2 (ja) * 2004-09-30 2012-05-16 三菱電機株式会社 半導体集積回路
JP2006211529A (ja) * 2005-01-31 2006-08-10 Seiko Epson Corp 電圧制御発振器
JP2007059878A (ja) * 2005-07-27 2007-03-08 Seiko Epson Corp 半導体装置、及び発振器
JP2010045133A (ja) * 2008-08-11 2010-02-25 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
US20110279186A1 (en) 2011-11-17
JP2011243622A (ja) 2011-12-01
KR101758382B1 (ko) 2017-07-14
KR20110126061A (ko) 2011-11-22
JP5494214B2 (ja) 2014-05-14
US8624683B2 (en) 2014-01-07
CN102355217A (zh) 2012-02-15

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SE01 Entry into force of request for substantive examination
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Applicant after: Renesas Electronics Corporation

Address before: Kanagawa

Applicant before: Renesas Electronics Corporation

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160120

Termination date: 20180513

CF01 Termination of patent right due to non-payment of annual fee