KR101755768B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

Info

Publication number
KR101755768B1
KR101755768B1 KR1020140129974A KR20140129974A KR101755768B1 KR 101755768 B1 KR101755768 B1 KR 101755768B1 KR 1020140129974 A KR1020140129974 A KR 1020140129974A KR 20140129974 A KR20140129974 A KR 20140129974A KR 101755768 B1 KR101755768 B1 KR 101755768B1
Authority
KR
South Korea
Prior art keywords
plasma
opening
impedance
adjusting member
processing apparatus
Prior art date
Application number
KR1020140129974A
Other languages
English (en)
Korean (ko)
Other versions
KR20150039683A (ko
Inventor
도시히로 도조
가즈오 사사키
마사토 미나미
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20150039683A publication Critical patent/KR20150039683A/ko
Application granted granted Critical
Publication of KR101755768B1 publication Critical patent/KR101755768B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140129974A 2013-10-03 2014-09-29 플라즈마 처리 장치 KR101755768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013207828A JP6435090B2 (ja) 2013-10-03 2013-10-03 プラズマ処理装置
JPJP-P-2013-207828 2013-10-03

Publications (2)

Publication Number Publication Date
KR20150039683A KR20150039683A (ko) 2015-04-13
KR101755768B1 true KR101755768B1 (ko) 2017-07-07

Family

ID=52792945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140129974A KR101755768B1 (ko) 2013-10-03 2014-09-29 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP6435090B2 (zh)
KR (1) KR101755768B1 (zh)
CN (1) CN104517797B (zh)
TW (1) TWI637660B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020092034A (ja) * 2018-12-06 2020-06-11 東京エレクトロン株式会社 プラズマ処理装置
CN112635281B (zh) * 2019-09-24 2024-04-05 中微半导体设备(上海)股份有限公司 零部件及其封孔方法、等离子体处理装置及其工作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103697A (ja) * 2005-10-05 2007-04-19 Hitachi Kokusai Electric Inc 基板処理装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS637155U (zh) * 1986-06-30 1988-01-18
JP2804762B2 (ja) * 1988-07-19 1998-09-30 東京エレクトロン株式会社 プラズマ処理装置
JP3204544B2 (ja) * 1992-07-09 2001-09-04 東京エレクトロン株式会社 処理装置
JP2956494B2 (ja) * 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP4213790B2 (ja) * 1998-08-26 2009-01-21 コバレントマテリアル株式会社 耐プラズマ部材およびそれを用いたプラズマ処理装置
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
JP4437350B2 (ja) * 1999-11-22 2010-03-24 東京エレクトロン株式会社 反応容器及びそれを備えるプラズマ処理装置
US20030159778A1 (en) * 2002-02-27 2003-08-28 Kunihiko Koroyasu Plasma processing apparatus, protecting layer therefor and installation of protecting layer
JP2003264169A (ja) * 2002-03-11 2003-09-19 Tokyo Electron Ltd プラズマ処理装置
US20040069223A1 (en) * 2002-10-10 2004-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wall liner and slot liner for process chamber
JP3962722B2 (ja) * 2003-12-24 2007-08-22 三菱重工業株式会社 プラズマ処理装置
JP5012316B2 (ja) * 2007-08-21 2012-08-29 パナソニック株式会社 プラズマ処理装置
JP5329072B2 (ja) * 2007-12-03 2013-10-30 東京エレクトロン株式会社 処理容器およびプラズマ処理装置
JP5217569B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP5357486B2 (ja) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
TW201100578A (en) * 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
KR101157790B1 (ko) * 2009-12-31 2012-06-20 엘아이지에이디피 주식회사 플라즈마 처리장치
JP2011258622A (ja) * 2010-06-07 2011-12-22 Tokyo Electron Ltd プラズマ処理装置及びその誘電体窓構造
KR101231048B1 (ko) * 2011-06-30 2013-02-07 엘아이지에이디피 주식회사 플라즈마 처리장치
JP5593418B2 (ja) * 2013-05-08 2014-09-24 東京エレクトロン株式会社 処理容器およびプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103697A (ja) * 2005-10-05 2007-04-19 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
JP6435090B2 (ja) 2018-12-05
JP2015072792A (ja) 2015-04-16
TWI637660B (zh) 2018-10-01
CN104517797B (zh) 2018-05-11
TW201534182A (zh) 2015-09-01
CN104517797A (zh) 2015-04-15
KR20150039683A (ko) 2015-04-13

Similar Documents

Publication Publication Date Title
KR101876873B1 (ko) 플라즈마 처리 장치
KR100418228B1 (ko) 유도 결합 플라즈마 처리 장치
JP5396256B2 (ja) プラズマ処理装置
KR101263109B1 (ko) 플라즈마 처리 장치 및 그 유전체창 구조
KR101725564B1 (ko) 플라즈마 처리장치
JP5606821B2 (ja) プラズマ処理装置
US20180358253A1 (en) Electrostatic chuck, a plasma processing apparatus having the same, and a method of manufacturing a semiconductor device using the same
KR20190005750A (ko) 플라즈마 처리 장치
KR102071769B1 (ko) 플라즈마 처리 용기 및 플라즈마 처리 장치
KR20060047589A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
WO2010104120A1 (ja) プラズマ処理装置
KR101755768B1 (ko) 플라즈마 처리 장치
TWI569693B (zh) A plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method
WO2016129437A1 (ja) プラズマ処理装置
KR100627785B1 (ko) 유도 결합 플라즈마 처리 장치
JP5335875B2 (ja) プラズマ処理装置
WO2024101066A1 (ja) プラズマ処理装置
JP7500397B2 (ja) プラズマ処理装置とその製造方法、及びプラズマ処理方法
JP2011071123A (ja) プラズマ処理装置
KR101669083B1 (ko) 플라즈마 발생장치

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant