KR101755586B1 - 발광 반도체 칩 - Google Patents

발광 반도체 칩 Download PDF

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KR101755586B1
KR101755586B1 KR1020127020140A KR20127020140A KR101755586B1 KR 101755586 B1 KR101755586 B1 KR 101755586B1 KR 1020127020140 A KR1020127020140 A KR 1020127020140A KR 20127020140 A KR20127020140 A KR 20127020140A KR 101755586 B1 KR101755586 B1 KR 101755586B1
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quantum well
semiconductor chip
semiconductor
layer
doping
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KR20120102146A (ko
Inventor
마티아스 페터
토비아스 마이어
알렉산더 발터
테츠야 타키
외르겐 오프
라이너 부텐다이히
요아힘 헤르트콘
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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KR1020127020140A 2009-12-30 2010-12-27 발광 반도체 칩 Active KR101755586B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
DE102009060747.1 2009-12-30
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177017884A Division KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Publications (2)

Publication Number Publication Date
KR20120102146A KR20120102146A (ko) 2012-09-17
KR101755586B1 true KR101755586B1 (ko) 2017-07-07

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KR1020127020140A Active KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020177017884A Ceased KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020187018915A Ceased KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

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KR1020177017884A Ceased KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020187018915A Ceased KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Country Status (8)

Country Link
US (4) US9012885B2 (cg-RX-API-DMAC7.html)
EP (1) EP2519980B1 (cg-RX-API-DMAC7.html)
JP (1) JP5735984B2 (cg-RX-API-DMAC7.html)
KR (3) KR101755586B1 (cg-RX-API-DMAC7.html)
CN (2) CN106229395B (cg-RX-API-DMAC7.html)
DE (1) DE102009060747B4 (cg-RX-API-DMAC7.html)
TW (1) TWI449212B (cg-RX-API-DMAC7.html)
WO (1) WO2011080249A1 (cg-RX-API-DMAC7.html)

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DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
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DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) * 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272B4 (de) * 2013-04-26 2026-06-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
KR102189614B1 (ko) * 2016-07-28 2020-12-11 루미레즈 엘엘씨 초격자를 갖는 iii-p 발광 디바이스
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
DE102016120419B4 (de) * 2016-10-26 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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Also Published As

Publication number Publication date
EP2519980B1 (de) 2019-04-03
KR20180078359A (ko) 2018-07-09
US9799797B2 (en) 2017-10-24
US20120298964A1 (en) 2012-11-29
US20170025570A1 (en) 2017-01-26
WO2011080249A1 (de) 2011-07-07
CN102687290B (zh) 2016-08-17
EP2519980A1 (de) 2012-11-07
KR20120102146A (ko) 2012-09-17
TWI449212B (zh) 2014-08-11
TW201135968A (en) 2011-10-16
DE102009060747A1 (de) 2011-07-07
CN106229395B (zh) 2020-08-14
US20170324001A1 (en) 2017-11-09
JP5735984B2 (ja) 2015-06-17
US20150194570A1 (en) 2015-07-09
JP2013516751A (ja) 2013-05-13
KR20170080718A (ko) 2017-07-10
US10388828B2 (en) 2019-08-20
DE102009060747B4 (de) 2025-01-09
CN102687290A (zh) 2012-09-19
US9530931B2 (en) 2016-12-27
CN106229395A (zh) 2016-12-14
US9012885B2 (en) 2015-04-21

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