KR101719853B1 - 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도 - Google Patents

산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도 Download PDF

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Publication number
KR101719853B1
KR101719853B1 KR1020127015506A KR20127015506A KR101719853B1 KR 101719853 B1 KR101719853 B1 KR 101719853B1 KR 1020127015506 A KR1020127015506 A KR 1020127015506A KR 20127015506 A KR20127015506 A KR 20127015506A KR 101719853 B1 KR101719853 B1 KR 101719853B1
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South Korea
Prior art keywords
indium
indium oxide
composition
layer
alkoxide
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20120095422A (ko
Inventor
위르겐 스타이거
듀이 부 팜
헤이코 팀
알렉세이 머크로브
아르네 호페
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에보니크 데구사 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Chemically Coating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Paints Or Removers (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127015506A 2009-12-18 2010-11-25 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도 Expired - Fee Related KR101719853B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009054997.8 2009-12-18
DE102009054997A DE102009054997B3 (de) 2009-12-18 2009-12-18 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
PCT/EP2010/068185 WO2011073005A2 (de) 2009-12-18 2010-11-25 Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung

Publications (2)

Publication Number Publication Date
KR20120095422A KR20120095422A (ko) 2012-08-28
KR101719853B1 true KR101719853B1 (ko) 2017-04-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127015506A Expired - Fee Related KR101719853B1 (ko) 2009-12-18 2010-11-25 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도

Country Status (9)

Country Link
US (1) US8841164B2 (https=)
EP (1) EP2513355B1 (https=)
JP (1) JP5864434B2 (https=)
KR (1) KR101719853B1 (https=)
CN (1) CN102652187B (https=)
DE (1) DE102009054997B3 (https=)
RU (1) RU2567142C9 (https=)
TW (1) TWI509102B (https=)
WO (1) WO2011073005A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) * 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
JP5871263B2 (ja) * 2011-06-14 2016-03-01 富士フイルム株式会社 非晶質酸化物薄膜の製造方法
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
EP2840590A4 (en) * 2012-04-16 2015-09-02 Korea Electronics Technology METHOD FOR PRODUCING AN OXIDE FILM USING A LOW TEMPERATURE PROCESS, OXIDE FILM AND ELECTRONIC DEVICE THEREFOR
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3009402A1 (de) * 2014-10-15 2016-04-20 Justus-Liebig-Universität Gießen Verfahren zur Herstellung von gemischten Metallhalogenid-Alkoxiden und Metalloxid-Nanopartikeln
US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
JP6828293B2 (ja) 2015-09-15 2021-02-10 株式会社リコー ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法
CN105836792B (zh) * 2016-05-27 2017-08-25 洛阳瑞德材料技术服务有限公司 一种纳米氧化铟的生产方法
JP2019057698A (ja) * 2017-09-22 2019-04-11 株式会社Ｓｃｒｅｅｎホールディングス 薄膜形成方法および薄膜形成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
DE102007013181A1 (de) * 2007-03-20 2008-09-25 Evonik Degussa Gmbh Transparente, elektrisch leitfähige Schicht, ein Verfahren zur Herstellung der Schicht sowie die Verwendung

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198606A (ja) * 1983-04-27 1984-11-10 三菱マテリアル株式会社 透明導電膜形成用組成物
JPS59198607A (ja) 1983-04-27 1984-11-10 三菱マテリアル株式会社 保護膜を備えた透明導電膜
US4681959A (en) 1985-04-22 1987-07-21 Stauffer Chemical Company Preparation of insoluble metal alkoxides
JPH01115010A (ja) 1987-10-28 1989-05-08 Central Glass Co Ltd 透明導電性膜用組成物およびその膜の形成方法
JPH02113033A (ja) * 1988-10-21 1990-04-25 Central Glass Co Ltd 静電防止処理を施された非金属材料およびこれらの処理方法
JPH02145459A (ja) * 1988-11-28 1990-06-04 Central Glass Co Ltd 複写機用ガラスおよびその製造法
FR2659649B1 (fr) * 1990-03-16 1992-06-12 Kodak Pathe Preparation d'alkoxydes d'indium solubles dans les solvants organiques.
RU2118402C1 (ru) * 1994-05-17 1998-08-27 Виктор Васильевич Дроботенко Способ получения металлооксидных покрытий (его варианты)
JPH09157855A (ja) * 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
JPH11106935A (ja) * 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JP4264145B2 (ja) * 1998-07-08 2009-05-13 株式会社Ｋｒｉ Ｉｎ２Ｏ３−ＳｎＯ２前駆体塗布液の製造方法
JP4030243B2 (ja) * 1999-12-20 2008-01-09 日本電気株式会社 強誘電体薄膜形成用溶液及び強誘電体薄膜形成方法
JP4073146B2 (ja) 2000-03-17 2008-04-09 株式会社高純度化学研究所 ガリウムアルコキシドの精製方法
JP2005272189A (ja) 2004-03-24 2005-10-06 Japan Science & Technology Agency 紫外光照射による酸化物半導体薄膜の作製法
WO2005115637A1 (en) * 2004-05-28 2005-12-08 Japan Science And Technology Agency Forming method, unit and material for pattern films, and product gained by said method
JP4767616B2 (ja) * 2005-07-29 2011-09-07 富士フイルム株式会社 半導体デバイスの製造方法及び半導体デバイス
CN101573471A (zh) 2006-12-29 2009-11-04 3M创新有限公司 固化含有金属烷氧化物的膜的方法
DE102007018431A1 (de) 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
GB2454019B (en) 2007-10-27 2011-11-09 Multivalent Ltd Improvements in or relating to synthesis of gallium and indium alkoxides
DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009050703B3 (de) 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
DE102007013181A1 (de) * 2007-03-20 2008-09-25 Evonik Degussa Gmbh Transparente, elektrisch leitfähige Schicht, ein Verfahren zur Herstellung der Schicht sowie die Verwendung

Also Published As

Publication number Publication date
WO2011073005A3 (de) 2011-09-01
US8841164B2 (en) 2014-09-23
EP2513355A2 (de) 2012-10-24
JP2013514246A (ja) 2013-04-25
TWI509102B (zh) 2015-11-21
RU2012130174A (ru) 2014-01-27
CN102652187B (zh) 2016-03-30
KR20120095422A (ko) 2012-08-28
RU2567142C2 (ru) 2015-11-10
TW201137170A (en) 2011-11-01
WO2011073005A2 (de) 2011-06-23
US20130122647A1 (en) 2013-05-16
CN102652187A (zh) 2012-08-29
JP5864434B2 (ja) 2016-02-17
RU2567142C9 (ru) 2016-10-27
DE102009054997B3 (de) 2011-06-01
EP2513355B1 (de) 2017-08-23

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