KR101719628B1 - 발광 소자 패키지 - Google Patents

발광 소자 패키지 Download PDF

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Publication number
KR101719628B1
KR101719628B1 KR1020140145830A KR20140145830A KR101719628B1 KR 101719628 B1 KR101719628 B1 KR 101719628B1 KR 1020140145830 A KR1020140145830 A KR 1020140145830A KR 20140145830 A KR20140145830 A KR 20140145830A KR 101719628 B1 KR101719628 B1 KR 101719628B1
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South Korea
Prior art keywords
layer
electrode
semiconductor layer
light emitting
contact
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KR1020140145830A
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English (en)
Korean (ko)
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KR20160049252A (ko
Inventor
임범진
임우식
서재원
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엘지이노텍 주식회사
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Priority to KR1020140145830A priority Critical patent/KR101719628B1/ko
Priority to EP15189020.9A priority patent/EP3016152B1/en
Priority to JP2015200947A priority patent/JP6826364B2/ja
Priority to US14/922,620 priority patent/US9559264B2/en
Priority to CN201510706196.0A priority patent/CN105552189A/zh
Publication of KR20160049252A publication Critical patent/KR20160049252A/ko
Application granted granted Critical
Publication of KR101719628B1 publication Critical patent/KR101719628B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020140145830A 2014-10-27 2014-10-27 발광 소자 패키지 Active KR101719628B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140145830A KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지
EP15189020.9A EP3016152B1 (en) 2014-10-27 2015-10-08 Light emitting diode package and light emitting apparatus including the package
JP2015200947A JP6826364B2 (ja) 2014-10-27 2015-10-09 発光素子パッケージ及びそれを含む発光装置
US14/922,620 US9559264B2 (en) 2014-10-27 2015-10-26 Light emitting device package and light emitting apparatus including the package
CN201510706196.0A CN105552189A (zh) 2014-10-27 2015-10-27 发光器件封装和包括该封装的发光设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140145830A KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170033760A Division KR20170034813A (ko) 2017-03-17 2017-03-17 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20160049252A KR20160049252A (ko) 2016-05-09
KR101719628B1 true KR101719628B1 (ko) 2017-03-24

Family

ID=54288728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140145830A Active KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지

Country Status (5)

Country Link
US (1) US9559264B2 (https=)
EP (1) EP3016152B1 (https=)
JP (1) JP6826364B2 (https=)
KR (1) KR101719628B1 (https=)
CN (1) CN105552189A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114566579B (zh) * 2016-07-05 2025-03-28 苏州立琻半导体有限公司 半导体元件
KR102372023B1 (ko) * 2017-06-05 2022-03-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자
KR102621240B1 (ko) * 2019-02-15 2024-01-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US11515452B2 (en) * 2019-09-09 2022-11-29 Chongqing Konka Photoelectric Technology Research LED chip, LED array and LED packaging method
KR102845535B1 (ko) * 2021-04-06 2025-08-13 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138499A (ja) 2010-12-27 2012-07-19 Rohm Co Ltd 発光素子、発光素子ユニットおよび発光素子パッケージ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3503439B2 (ja) * 1997-09-11 2004-03-08 日亜化学工業株式会社 窒化物半導体素子
KR20050041536A (ko) * 2003-10-31 2005-05-04 엘지이노텍 주식회사 발광소자
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
TWI531088B (zh) * 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
KR20110135103A (ko) * 2010-06-10 2011-12-16 에스티에스반도체통신 주식회사 반도체 발광 소자 및 그 제조 방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2012124429A (ja) * 2010-12-10 2012-06-28 Rohm Co Ltd 発光素子、発光素子ユニット、発光素子パッケージおよび発光素子の製造方法
KR101712050B1 (ko) * 2011-06-10 2017-03-03 엘지이노텍 주식회사 발광 소자 패키지
KR20130024089A (ko) * 2011-08-30 2013-03-08 엘지이노텍 주식회사 발광소자
KR101654339B1 (ko) 2011-10-28 2016-09-06 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
DE102012101889A1 (de) * 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI455665B (zh) * 2012-11-05 2014-10-01 錸鑽科技股份有限公司 覆晶式發光二極體封裝模組及其製法
JP6100598B2 (ja) * 2013-04-25 2017-03-22 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
CN103367618B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光芯片

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JP2012138499A (ja) 2010-12-27 2012-07-19 Rohm Co Ltd 発光素子、発光素子ユニットおよび発光素子パッケージ

Also Published As

Publication number Publication date
KR20160049252A (ko) 2016-05-09
EP3016152A1 (en) 2016-05-04
JP2016086159A (ja) 2016-05-19
US9559264B2 (en) 2017-01-31
EP3016152B1 (en) 2019-05-15
US20160118543A1 (en) 2016-04-28
JP6826364B2 (ja) 2021-02-03
CN105552189A (zh) 2016-05-04

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