KR101712298B1 - 하전 입자선 장치 및 중첩 어긋남량 측정 방법 - Google Patents

하전 입자선 장치 및 중첩 어긋남량 측정 방법 Download PDF

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KR101712298B1
KR101712298B1 KR1020157009208A KR20157009208A KR101712298B1 KR 101712298 B1 KR101712298 B1 KR 101712298B1 KR 1020157009208 A KR1020157009208 A KR 1020157009208A KR 20157009208 A KR20157009208 A KR 20157009208A KR 101712298 B1 KR101712298 B1 KR 101712298B1
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South Korea
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charged particle
particle beam
pattern
beam device
detector
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KR20150054973A (ko
Inventor
다꾸마 야마모또
도모히로 후나꼬시
겐지 다니모또
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020157009208A 2012-10-26 2013-10-23 하전 입자선 장치 및 중첩 어긋남량 측정 방법 Active KR101712298B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-236901 2012-10-26
JP2012236901A JP5965819B2 (ja) 2012-10-26 2012-10-26 荷電粒子線装置及び重ね合わせずれ量測定方法
PCT/JP2013/078678 WO2014065311A1 (ja) 2012-10-26 2013-10-23 荷電粒子線装置及び重ね合わせずれ量測定方法

Publications (2)

Publication Number Publication Date
KR20150054973A KR20150054973A (ko) 2015-05-20
KR101712298B1 true KR101712298B1 (ko) 2017-03-03

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KR1020157009208A Active KR101712298B1 (ko) 2012-10-26 2013-10-23 하전 입자선 장치 및 중첩 어긋남량 측정 방법

Country Status (5)

Country Link
US (1) US9224575B2 (enExample)
JP (1) JP5965819B2 (enExample)
KR (1) KR101712298B1 (enExample)
TW (1) TWI498522B (enExample)
WO (1) WO2014065311A1 (enExample)

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US9418819B2 (en) * 2013-09-06 2016-08-16 Kla-Tencor Corporation Asymmetrical detector design and methodology
JP6511193B2 (ja) 2016-04-13 2019-05-15 株式会社日立ハイテクノロジーズ パターン計測装置およびパターン計測方法
KR102372842B1 (ko) 2016-04-22 2022-03-08 어플라이드 머티어리얼스, 인코포레이티드 Pecvd 오버레이 개선을 위한 방법
JP6850234B2 (ja) * 2017-09-29 2021-03-31 株式会社日立ハイテク 荷電粒子線装置
CN115507782A (zh) * 2017-10-13 2022-12-23 株式会社日立高新技术 图案测量装置及图案测量方法
US10403471B2 (en) * 2017-11-29 2019-09-03 Asml Netherlands B.V. Systems and methods for charged particle beam modulation
US10473460B2 (en) 2017-12-11 2019-11-12 Kla-Tencor Corporation Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
JP2019164886A (ja) * 2018-03-19 2019-09-26 株式会社日立ハイテクノロジーズ ビーム照射装置
JP7093242B2 (ja) * 2018-06-27 2022-06-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム画像取得装置
JP2020187876A (ja) * 2019-05-13 2020-11-19 株式会社日立ハイテク 荷電粒子線装置
JP2021034163A (ja) * 2019-08-20 2021-03-01 株式会社日立ハイテク 荷電粒子ビームシステム、及び重ね合わせずれ量測定方法
JP7254940B2 (ja) * 2019-08-23 2023-04-10 株式会社日立ハイテク オーバーレイ計測システム及びオーバーレイ計測装置
US12183541B2 (en) 2019-08-28 2024-12-31 Hitachi High-Tech Corporation Charged particle beam system and overlay misalignment measurement method
KR102623888B1 (ko) * 2019-10-30 2024-01-10 양쯔 메모리 테크놀로지스 씨오., 엘티디. 반도체 제조공정에 적용되는 입자빔의 수직도 보정 방법 및 시스템
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
JP2022112137A (ja) 2021-01-21 2022-08-02 株式会社日立ハイテク 荷電粒子ビーム装置
TWI885216B (zh) * 2021-01-29 2025-06-01 日商日立高新技術科學股份有限公司 試料片移設裝置
CN119452449A (zh) * 2022-09-30 2025-02-14 Asml荷兰有限公司 扫描电子显微镜（sem）背向散射电子（bse）聚焦目标和方法

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Also Published As

Publication number Publication date
TWI498522B (zh) 2015-09-01
JP2014086393A (ja) 2014-05-12
WO2014065311A1 (ja) 2014-05-01
TW201428232A (zh) 2014-07-16
US20150287569A1 (en) 2015-10-08
KR20150054973A (ko) 2015-05-20
US9224575B2 (en) 2015-12-29
JP5965819B2 (ja) 2016-08-10

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