JP5965819B2 - 荷電粒子線装置及び重ね合わせずれ量測定方法 - Google Patents

荷電粒子線装置及び重ね合わせずれ量測定方法 Download PDF

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Publication number
JP5965819B2
JP5965819B2 JP2012236901A JP2012236901A JP5965819B2 JP 5965819 B2 JP5965819 B2 JP 5965819B2 JP 2012236901 A JP2012236901 A JP 2012236901A JP 2012236901 A JP2012236901 A JP 2012236901A JP 5965819 B2 JP5965819 B2 JP 5965819B2
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charged particle
particle beam
pattern
deviation amount
overlay
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Japanese (ja)
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JP2014086393A5 (enExample
JP2014086393A (ja
Inventor
山本　琢磨
琢磨 山本
知弘 船越
知弘 船越
谷本　憲史
憲史 谷本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2012236901A priority Critical patent/JP5965819B2/ja
Priority to TW102134768A priority patent/TWI498522B/zh
Priority to PCT/JP2013/078678 priority patent/WO2014065311A1/ja
Priority to KR1020157009208A priority patent/KR101712298B1/ko
Priority to US14/435,203 priority patent/US9224575B2/en
Publication of JP2014086393A publication Critical patent/JP2014086393A/ja
Publication of JP2014086393A5 publication Critical patent/JP2014086393A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2012236901A 2012-10-26 2012-10-26 荷電粒子線装置及び重ね合わせずれ量測定方法 Active JP5965819B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012236901A JP5965819B2 (ja) 2012-10-26 2012-10-26 荷電粒子線装置及び重ね合わせずれ量測定方法
TW102134768A TWI498522B (zh) 2012-10-26 2013-09-26 Measurement method of charged particle beam device and stacking misalignment
PCT/JP2013/078678 WO2014065311A1 (ja) 2012-10-26 2013-10-23 荷電粒子線装置及び重ね合わせずれ量測定方法
KR1020157009208A KR101712298B1 (ko) 2012-10-26 2013-10-23 하전 입자선 장치 및 중첩 어긋남량 측정 방법
US14/435,203 US9224575B2 (en) 2012-10-26 2013-10-23 Charged particle beam device and overlay misalignment measurement method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012236901A JP5965819B2 (ja) 2012-10-26 2012-10-26 荷電粒子線装置及び重ね合わせずれ量測定方法

Publications (3)

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JP2014086393A JP2014086393A (ja) 2014-05-12
JP2014086393A5 JP2014086393A5 (enExample) 2015-08-13
JP5965819B2 true JP5965819B2 (ja) 2016-08-10

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Country Link
US (1) US9224575B2 (enExample)
JP (1) JP5965819B2 (enExample)
KR (1) KR101712298B1 (enExample)
TW (1) TWI498522B (enExample)
WO (1) WO2014065311A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20200047643A (ko) 2017-10-13 2020-05-07 주식회사 히타치하이테크 패턴 계측 장치 및 패턴 계측 방법
US12211668B2 (en) 2021-01-21 2025-01-28 Hitachi High-Tech Corporation Charged particle beam device

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US9418819B2 (en) * 2013-09-06 2016-08-16 Kla-Tencor Corporation Asymmetrical detector design and methodology
US10816332B2 (en) 2016-04-13 2020-10-27 Hitachi High-Tech Corporation Pattern measurement device and pattern measurement method
WO2017184301A1 (en) * 2016-04-22 2017-10-26 Applied Materials, Inc. Method for pecvd overlay improvement
JP6850234B2 (ja) * 2017-09-29 2021-03-31 株式会社日立ハイテク 荷電粒子線装置
US10403471B2 (en) * 2017-11-29 2019-09-03 Asml Netherlands B.V. Systems and methods for charged particle beam modulation
US10473460B2 (en) * 2017-12-11 2019-11-12 Kla-Tencor Corporation Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
JP2019164886A (ja) * 2018-03-19 2019-09-26 株式会社日立ハイテクノロジーズ ビーム照射装置
JP7093242B2 (ja) * 2018-06-27 2022-06-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム画像取得装置
JP2020187876A (ja) * 2019-05-13 2020-11-19 株式会社日立ハイテク 荷電粒子線装置
JP2021034163A (ja) * 2019-08-20 2021-03-01 株式会社日立ハイテク 荷電粒子ビームシステム、及び重ね合わせずれ量測定方法
JP7254940B2 (ja) * 2019-08-23 2023-04-10 株式会社日立ハイテク オーバーレイ計測システム及びオーバーレイ計測装置
WO2021038764A1 (ja) * 2019-08-28 2021-03-04 株式会社日立ハイテク 荷電粒子ビームシステム、及び重ね合わせずれ量測定方法
WO2021081804A1 (en) * 2019-10-30 2021-05-06 Yangtze Memory Technologies Co., Ltd Method for calibrating verticality of particle beam and system applied to semiconductor fabrication process
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
TWI885216B (zh) * 2021-01-29 2025-06-01 日商日立高新技術科學股份有限公司 試料片移設裝置
CN119452449A (zh) * 2022-09-30 2025-02-14 Asml荷兰有限公司 扫描电子显微镜（sem）背向散射电子（bse）聚焦目标和方法

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Cited By (6)

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KR20200047643A (ko) 2017-10-13 2020-05-07 주식회사 히타치하이테크 패턴 계측 장치 및 패턴 계측 방법
KR20210126161A (ko) 2017-10-13 2021-10-19 주식회사 히타치하이테크 패턴 계측 장치 및 패턴 계측 방법
KR20220056255A (ko) 2017-10-13 2022-05-04 주식회사 히타치하이테크 패턴 계측 장치 및 패턴 계측 방법
US11353798B2 (en) 2017-10-13 2022-06-07 Hitachi High-Technologies Corporation Pattern measurement device and pattern measurement method
US12174551B2 (en) 2017-10-13 2024-12-24 Hitachi High-Technologies Corporation Pattern measurement device and pattern measurement method
US12211668B2 (en) 2021-01-21 2025-01-28 Hitachi High-Tech Corporation Charged particle beam device

Also Published As

Publication number Publication date
TW201428232A (zh) 2014-07-16
WO2014065311A1 (ja) 2014-05-01
KR20150054973A (ko) 2015-05-20
TWI498522B (zh) 2015-09-01
KR101712298B1 (ko) 2017-03-03
US9224575B2 (en) 2015-12-29
JP2014086393A (ja) 2014-05-12
US20150287569A1 (en) 2015-10-08

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