KR101667195B1 - 물리적 기상 증착용 챔버 - Google Patents

물리적 기상 증착용 챔버 Download PDF

Info

Publication number
KR101667195B1
KR101667195B1 KR1020127032144A KR20127032144A KR101667195B1 KR 101667195 B1 KR101667195 B1 KR 101667195B1 KR 1020127032144 A KR1020127032144 A KR 1020127032144A KR 20127032144 A KR20127032144 A KR 20127032144A KR 101667195 B1 KR101667195 B1 KR 101667195B1
Authority
KR
South Korea
Prior art keywords
chamber
target
door
vapor deposition
physical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127032144A
Other languages
English (en)
Korean (ko)
Other versions
KR20130081230A (ko
Inventor
라이너 힌터슈스터
로타르 리페르트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20130081230A publication Critical patent/KR20130081230A/ko
Application granted granted Critical
Publication of KR101667195B1 publication Critical patent/KR101667195B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020127032144A 2010-05-11 2011-05-11 물리적 기상 증착용 챔버 Expired - Fee Related KR101667195B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10162560.6A EP2387063B1 (en) 2010-05-11 2010-05-11 Chamber for physical vapor deposition
EP10162560.6 2010-05-11
PCT/EP2011/057626 WO2011141513A1 (en) 2010-05-11 2011-05-11 Chamber for physical vapor deposition

Publications (2)

Publication Number Publication Date
KR20130081230A KR20130081230A (ko) 2013-07-16
KR101667195B1 true KR101667195B1 (ko) 2016-10-18

Family

ID=42320179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127032144A Expired - Fee Related KR101667195B1 (ko) 2010-05-11 2011-05-11 물리적 기상 증착용 챔버

Country Status (7)

Country Link
US (1) US8758579B2 (enExample)
EP (2) EP2709138B1 (enExample)
JP (2) JP2013530308A (enExample)
KR (1) KR101667195B1 (enExample)
CN (1) CN102918622B (enExample)
TW (1) TWI537411B (enExample)
WO (1) WO2011141513A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206858649U (zh) * 2014-07-22 2018-01-09 应用材料公司 靶材布置和处理设备
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
WO2020048846A1 (en) 2018-09-03 2020-03-12 Agc Glass Europe Kit for mounting a surface treatment chamber
NL2023642B1 (en) 2019-08-14 2021-02-24 Leydenjar Tech B V Silicon composition material for use as battery anode
WO2022058014A1 (en) * 2020-09-17 2022-03-24 Applied Materials, Inc. Cathode assembly, deposition apparatus and method for sputter deposition
KR20240124349A (ko) * 2021-12-16 2024-08-16 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착을 위한 캐소드 조립체, 증착 장치 및 방법
NL2030360B1 (en) * 2021-12-30 2023-07-06 Leydenjar Tech B V Plasma-enhanced Chemical Vapour Deposition Apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040251130A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
JP2008533297A (ja) * 2005-03-11 2008-08-21 ベーカート・アドヴァンスト・コーティングス 単一の直角エンドブロック

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924758U (ja) * 1982-08-04 1984-02-16 株式会社徳田製作所 スパツタリング装置
US4519885A (en) * 1983-12-27 1985-05-28 Shatterproof Glass Corp. Method and apparatus for changing sputtering targets in a magnetron sputtering system
US5591314A (en) * 1995-10-27 1997-01-07 Morgan; Steven V. Apparatus for affixing a rotating cylindrical magnetron target to a spindle
US5824197A (en) * 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
JP4614037B2 (ja) * 2000-09-08 2011-01-19 Agcセラミックス株式会社 円筒状ターゲット
US20050051422A1 (en) * 2003-02-21 2005-03-10 Rietzel James G. Cylindrical magnetron with self cleaning target
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置
DE602005006008T2 (de) * 2004-10-18 2009-06-18 Bekaert Advanced Coatings Endblock für eine sputter-vorrichtung mit drehbarem target
KR101358820B1 (ko) * 2004-10-18 2014-02-10 솔레라스 어드밴스드 코팅스 비브이비에이 회전가능한 스퍼터링 타겟을 지지하기 위한 평탄한엔드-블록
DE102004060423B4 (de) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Rohrtarget und dessen Verwendung
EP1698715A1 (de) * 2005-03-03 2006-09-06 Applied Films GmbH & Co. KG Anlage zum Beschichten eines Substrats und Einschubelement
CN1827545B (zh) * 2005-03-03 2012-11-07 应用材料两合股份有限公司 涂敷基底的系统及插入元件
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
EP2276870A4 (en) * 2008-04-14 2012-07-25 Angstrom Sciences Inc CYLINDRICAL MAGNETRON
US20100101949A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Rotatable sputter target backing cylinder, rotatable sputter target, method of producing a rotatable sputter target, and coating installation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040251130A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
JP2008533297A (ja) * 2005-03-11 2008-08-21 ベーカート・アドヴァンスト・コーティングス 単一の直角エンドブロック

Also Published As

Publication number Publication date
EP2387063A1 (en) 2011-11-16
WO2011141513A1 (en) 2011-11-17
CN102918622B (zh) 2016-03-02
TWI537411B (zh) 2016-06-11
TW201200618A (en) 2012-01-01
EP2709138A1 (en) 2014-03-19
JP2016148106A (ja) 2016-08-18
US20110278166A1 (en) 2011-11-17
US8758579B2 (en) 2014-06-24
JP6275755B2 (ja) 2018-02-07
JP2013530308A (ja) 2013-07-25
KR20130081230A (ko) 2013-07-16
EP2709138B1 (en) 2016-11-30
CN102918622A (zh) 2013-02-06
EP2387063B1 (en) 2014-04-30

Similar Documents

Publication Publication Date Title
KR101667195B1 (ko) 물리적 기상 증착용 챔버
EP2855729B1 (en) Method for coating a substrate and coater
KR101209652B1 (ko) 스퍼터 장치
KR20190077549A (ko) 스퍼터링 장치용 캐소드 유닛
US11244845B2 (en) Vacuum chamber arrangement and method for processing a substrate
KR101386200B1 (ko) 스퍼터 코팅 장치 및 진공 코팅 장치
TWI312012B (en) Improved magnetron sputtering system for large-area substrates having removable anodes
JP5748839B2 (ja) 回転ターゲットを支持するためのデバイスおよびスパッタリング設備
KR101430653B1 (ko) 박막 증착용 인라인 스퍼터 장치
US11898238B2 (en) Shielding device and thin-film-deposition equipment with the same
KR101288133B1 (ko) 기판 증착 장치
JP6393826B2 (ja) 回転カソード用のシールド装置、回転カソード、及び堆積機器中の暗部のシールド方法
KR101780945B1 (ko) 인라인 스퍼터링 시스템
KR102142002B1 (ko) 기판 상의 재료 증착을 위한 방법, 재료 증착 프로세스를 제어하기 위한 제어기, 및 기판 상의 층 증착을 위한 장치
KR101913791B1 (ko) 타겟 어레인지먼트, 그를 구비한 프로세싱 장치 및 그의 제조 방법
CN103060763A (zh) 真空成膜方法及真空成膜装置
CN217556285U (zh) 真空镀膜机
CN115747741A (zh) 溅射镀膜设备
KR20220053109A (ko) 기판처리장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20201013

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20201013