KR101640385B1 - Light emitting device package manufacturing method - Google Patents

Abstract

The present invention relates to a method of manufacturing a light emitting device package that can be used for a display or an illumination. The method includes a lower electrode layer having a first electrode on one side and a second electrode on the other side, A substrate preparation step of preparing a substrate including an adhesive layer formed on the adhesive layer and an insulating supporting layer above the adhesive layer; A through hole forming step of forming a first through hole and a second through hole in the substrate such that a part of an upper surface of the first electrode of the lower electrode layer is exposed and a part of an upper surface of the second electrode is exposed; A bonding medium filling step of filling a first bonding medium and a second bonding medium, which are conductive materials, in the first through holes and the second through holes; And a light emitting device mounted on the first bonding medium and the second bonding medium such that the first bonding medium and the first electrode pad are electrically connected and the second bonding medium and the second electrode pad are electrically connected to each other A light emitting element seating step; . ≪ / RTI >

Description

[0001] The present invention relates to a light emitting device package manufacturing method,

The present invention relates to a method of manufacturing a light emitting device package, and more particularly, to a method of manufacturing a light emitting device package that can be used for display or illumination.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

In the conventional light emitting device package, when a PCB substrate composed of a substrate core layer, an upper electrode layer formed on the upper surface of the substrate core layer, and a lower electrode layer formed on the lower surface of the substrate core layer is applied, an adhesive layer is provided for each layer, The upper and lower portions may be provided with a bonding medium, and a light emitting device may be mounted thereon.

However, such a conventional light emitting device package has a problem in that the overall thickness thereof becomes thick due to the thickness of the adhesive layer, the electrode layer and the bonding medium.

In addition, the material cost and the manufacturing cost of the layer-by-layer adhesive layer, the electrode layer, and the bonding medium are additionally required, thereby increasing the unit cost of the product.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to eliminate the upper adhesive layer and the upper electrode layer, to fill the through hole with the bonding medium, Accordingly, it is possible to manufacture an inexpensive product by lowering the unit cost of the product, and to insert the pad of the light emitting element into the through hole, thereby facilitating the alignment of the light emitting element and the alignment of the optical axis. . However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device package including a lower electrode layer having a first electrode on one side and a second electrode on the other side with reference to an electrode separation space, A substrate preparation step of preparing a substrate including an adhesive layer and an insulating support layer above the adhesive layer; A through hole forming step of forming a first through hole and a second through hole in the substrate such that a part of an upper surface of the first electrode of the lower electrode layer is exposed and a part of an upper surface of the second electrode is exposed; A bonding medium filling step of filling a first bonding medium and a second bonding medium, which are conductive materials, in the first through holes and the second through holes; And a light emitting device mounted on the first bonding medium and the second bonding medium such that the first bonding medium and the first electrode pad are electrically connected and the second bonding medium and the second electrode pad are electrically connected to each other And a light emitting element seating step.

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According to an aspect of the present invention, the through hole forming step may include forming the first through hole and the second through hole by punching the adhesive layer and the insulating supporting layer of the substrate with a punch.

According to an aspect of the present invention, the temporary substrate adhering step may include a temporary substrate adhering step of adhering a temporary substrate with an adhesive to the lower surface of the substrate so as to temporarily support the substrate after the substrate preparing step.

According to an aspect of the present invention, the adhesive is a UV adhesive capable of being cured and melted by UV light, and the temporary substrate is a translucent glass substrate through which the UV light can pass. After the light emitting element seating step, And a temporary substrate removing step of irradiating the temporary substrate with UV light so that the UV adhesive can be melted through the temporary substrate and removing the temporary substrate from the substrate.

According to some embodiments of the present invention as described above, it is possible to reduce the thickness of the product to reduce the material cost and the manufacturing cost, thereby lowering the unit cost of the product and produce an inexpensive product. It is possible to facilitate the operation. Of course, the scope of the present invention is not limited by these effects.

1 is an exploded perspective view of a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view showing the light emitting device package of FIG.
FIGS. 3 to 9 are cross-sectional views illustrating steps of manufacturing the light emitting device package of FIG. 1. FIG.
10 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a partially exploded perspective view of a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view showing the light emitting device package 100 of FIG.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 100 made of a lower electrode layer 10, an adhesive layer 20, and an insulating support layer 30 1, a first bonding medium B1, a second bonding medium B2, and a light emitting element 40. [

For example, the substrate 1 may be a printed circuit board (PCB) in which an epoxy resin sheet and the lower electrode layer 10 are multilayered by a PCB manufacturing method using the adhesive layer 20. The substrate 1 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

The lower electrode layer 10 may be a copper layer having a pattern having a first electrode 11 on one side and a second electrode 12 on the other side with respect to the electrode separation space A. However, the lower electrode layer 10 is not necessarily limited to the copper layer but may be formed of a metal material having high electrical conductivity such as aluminum, zinc, tin, lead, gold, or silver.

Also, for example, the adhesive layer 20 may be an epoxy-based adhesive member formed above the lower electrode layer 10. However, the adhesive layer 20 is not necessarily limited to epoxy, and may be applied to all kinds of adhesive materials applied to a PCB manufacturing process such as various organic materials, inorganic materials, and polymer materials.

The insulating support layer 30 may be formed on the adhesive layer 20 and may adhere to the lower electrode layer 10 to support the lower electrode layer 10, A first through hole H1 is formed to expose a part of an upper surface of the first electrode 11 and a second through hole H2 is formed so that a part of an upper surface of the second electrode 12 is exposed. Layer.

More specifically, the insulating support layer 30 may include a polyimide component, a synthetic resin substrate such as various resins and glass epoxy, or a ceramic substrate in consideration of thermal conductivity.

In order to improve workability, the insulating support layer 30 may be formed by partially or wholly selecting at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber, . ≪ / RTI >

1 and 2, the lower electrode layer 10 is made of a copper material containing copper so as to be electrically connected to an external substrate, and the insulating support layer 30 is made of poly And may be an insulating resin material containing a mid component.

Meanwhile, for example, the first bonding medium B1 may be a solder or a solder paste of a conductive material filled in the first through hole H1, and the second bonding medium B2 may be a second through hole H2). ≪ / RTI >

For example, the first through-hole H1 and the second through-hole H2 may be filled with the first bonding medium B1 and the second bonding medium B2 to facilitate filling of the first bonding medium B1 and the second bonding medium B2. A flux such as a solvent can be applied.

Therefore, the depth of the first through hole H1 and the second through hole H2 of the substrate 1 is very low, and the depth of the first through hole H1 and the second through hole H2 are very small, The substrate 1 can be applied to a thin film substrate on which the first bonding medium B1 and the second bonding medium B2 can be easily filled and the substrate 1 can be bonded to the first through hole H1 and the second through hole H2 When the first bonding medium B1 and the second bonding medium B2 are difficult to be easily filled in the first through hole H1 and the second through hole H2 because the depth of the first bonding medium B1 and the second bonding medium B2 are relatively deep, It is easy to charge using flux.

More specifically, for example, as shown in FIGS. 1 and 2, the first through-hole H1 and the second through-hole H2 are formed in the insulating support layer 30 by the punch P of FIG. And the adhesive layer 20 may be punched.

Since the insulating support layer 30 and the adhesive layer 20 are made of a material having a lower strength than the lower electrode layer 10, the height of the punch P is controlled so as not to pass through the lower electrode layer 10, Only the insulating support layer 30 and the adhesive layer 20 can be penetrated.

However, the first through hole H1 and the second through hole H2 can be formed by using a variety of processes such as laser, etching, and cutting, not limited to the punch P described above.

1 and 2, the first bonding medium B1 and the first electrode pad P1 are electrically connected to each other, and the second bonding medium B2 A flip chip type LED (Light Emitting Diode) mounted on the first bonding medium B1 and the second bonding medium B2 so that the first electrode pad P2 and the second electrode pad P2 are electrically connected to each other .

Although not shown, the pad may be in the form of a flip chip having a signal transmission medium such as a pump or a solder in addition to the pad. In addition, a bonding wire may be applied to the terminal, or a bonding wire may be applied only to the first terminal or the second terminal A vertical type light emitting device, or the like may be used as the light emitting device.

In addition, the first and second pads may have various shapes other than the rectangular plate shape shown in FIG. 1, and may have a finger structure or a bump structure having a plurality of fingers on one arm .

1 and 2, one or more light emitting devices 40 may be provided on the substrate 1, and a plurality of light emitting devices 40 may be provided on the substrate 1 It is possible.

In addition, although not shown, the light emitting device 40 may be a horizontal or vertical type light emitting device electrically connected to the substrate 1 using a bonding wire.

As shown in FIGS. 1 and 2, the light emitting device 40 may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The nitride semiconductor such as InN, AlN, InGaN, AlGaN, or InGaAlN is epitaxially grown on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. In addition, the light emitting device 40 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

Since the external quantum efficiency of the light emitting device is lowered by absorbing light generated from the GaN-based semiconductor, the Si (silicon) substrate may be removed, if necessary, and Si, Ge, SiAl, Or a support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB ₂ , HfB ₂ , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Therefore, the existing upper adhesive layer and the upper electrode layer are removed, and the bonding media B1 and B2 are filled in the through holes H1 and H2 to reduce the thickness of the product, thereby reducing the material cost and the manufacturing cost, This allows the product to be manufactured at a low cost to produce an inexpensive product. The pads P1 and P2 of the light emitting device 40 are inserted into the through holes H1 and H2, Alignment and alignment of the optical axis can be facilitated.

On the other hand, a very wide variety of members such as a fluorescent material, a quantum dot, a light-transmitting encapsulant, various fillers, and the like may be disposed above the light emitting device 40.

FIGS. 3 to 9 are cross-sectional views illustrating a manufacturing process of the light emitting device package 100 of FIG. 1 step by step.

As shown in FIGS. 3 to 9, the manufacturing process of the light emitting device package 100 of FIG. 1 will be described. First, as shown in FIG. 3, A lower electrode layer 10 having an electrode 11 and a second electrode 12 on the other side and an adhesive layer 20 formed above the lower electrode layer 10 and an insulating support layer 30 ) Can be prepared.

4, the temporary substrate 2 may be adhered to the lower surface of the substrate 1 with the adhesive 3 so that the substrate 1 can be temporarily supported.

Here, the adhesive 3 may be a UV adhesive that can be cured and melted by UV light, and the temporary substrate 2 may be a transparent glass substrate through which the UV light can pass. In addition, the adhesive 3 may be applied to various kinds of temporary adhesives that are easy to peel off, and the temporary substrate 2 may also be applied to various types of temporary adhesive sheets which are easily peeled off.

5, a portion of the upper surface of the first electrode 11 of the lower electrode layer 10 is exposed, and a portion of the upper surface of the second electrode 12 is exposed. As shown in FIG. 5, The first through hole H1 and the second through hole H2 can be formed.

At this time, the first through hole H1 and the second through hole H2 can be formed by punching the adhesive layer 20 and the insulating support layer 30 of the substrate 1 with the punch P have.

6, a first bonding medium B1 and a second bonding medium B2, which are conductive materials, may be filled in the first through hole H1 and the second through hole H2. have.

7, the first bonding medium B1 and the first electrode pad P1 are electrically connected to each other, and the second bonding medium B2 and the second electrode pad P2 are electrically connected to each other, The light emitting device 40 may be mounted on the first bonding medium B1 and the second bonding medium B2 so as to be connected to the second bonding medium B2.

8, UV light (UV) is applied to the temporary substrate 2 so as to melt the adhesive 3 through the temporary substrate 2, The temporary substrate 2 can be removed from the substrate 1, as shown in FIG.

2, the backlight unit 1000 according to some embodiments of the present invention includes a first electrode 11 on one side and a second electrode 11 on the other side with reference to the electrode separation space A, A lower electrode layer 10 having a lower electrode layer 12 formed on the upper electrode layer 10 and an adhesive layer 20 formed on the lower electrode layer 10 and bonded to the lower electrode layer 10, A first through hole H1 is formed to expose a part of the upper surface of the first electrode 11 of the lower electrode layer 10 and a part of the upper surface of the second electrode 12 A first bonding medium B1 of a conductive material filled in the first through hole H1 and a second bonding medium B1 of a conductive material filled in the second through hole H2, A second bonding medium B2 of a conductive material filled in the first bonding medium B1 and a second bonding medium B2 electrically connected to the first bonding medium B1 and the first electrode pad P1, The light emitting device 40 and the light emitting device 40 are mounted on the first bonding medium B1 and the second bonding medium B2 so that the medium B2 and the second electrode pad P2 are electrically connected to each other. And a light guide plate 110 installed in an optical path of the light guide plate 110.

Here, the substrate 1, the first bonding medium B1, the second bonding medium B2, and the light emitting element (second substrate), each of which comprises the lower electrode layer 10, the adhesive layer 20, The device 40 may have the same configuration and function as those of the light emitting device package 100 according to some embodiments of the present invention shown in FIGS. Therefore, detailed description is omitted.

The light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 40.

The light guide plate 110 is installed in an optical path of light generated from the light emitting device 40, and can transmit light over a wider area.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

Although not shown, the present invention may include a lighting device or a display device including the light emitting device package 100 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

10 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.

1 to 10, a method of manufacturing a light emitting device package according to some embodiments of the present invention includes forming a first electrode 11 on one side and a second electrode 11 on the other side with reference to an electrode separation space A, A substrate 1 including a lower electrode layer 10 having electrodes 12 and an adhesive layer 20 formed above the lower electrode layer 10 and an insulating support layer 30 above the adhesive layer 20, The substrate 1 is prepared so that a part of the upper surface of the first electrode 11 of the lower electrode layer 10 is exposed and a part of the upper surface of the second electrode 12 is exposed. A through hole forming step S3 for forming a first through hole H1 and a second through hole H2 and a second through hole forming step S3 for forming the first through hole H1 and the second through hole H2, A bonding medium filling step S4 filling the bonding medium B1 and the second bonding medium B2 and a step S4 of electrically connecting the first bonding medium B1 and the first electrode pad P1 And the light emitting device 40 is placed on the first bonding medium B1 and the second bonding medium B2 so that the second bonding medium B2 and the second electrode pad P2 are electrically connected to each other And a light emitting element seating step (S5).

Here, the through-hole forming step S3 may be performed by punching the adhesive layer 20 and the insulating supporting layer 30 of the substrate 1 with the punch P to form the first through hole H1 and the second through- And may form the through hole H2.

The method of manufacturing a light emitting device package according to some embodiments of the present invention may further include the step of applying an adhesive agent to the lower surface of the substrate 1 so as to temporarily support the substrate 1 after the substrate preparing step S1 3) for adhering the temporary substrate (2) to the temporary substrate (2).

The adhesive 3 is a UV adhesive capable of being cured and melted by UV light. The temporary substrate 2 is a transparent glass substrate through which the UV light can pass. According to some embodiments of the present invention A method of manufacturing a light emitting device package includes the steps of UV light (UV) applied to the temporary substrate (2) so that the adhesive (3) can be melted after passing through the temporary substrate (2) (S6) for removing the temporary substrate (2) from the substrate (1).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1: substrate
2: temporary substrate
3: Adhesive
10: Lower electrode layer
11: first electrode
12: Second electrode
A: electrode separation space
20: Adhesive layer
30: insulated supporting layer
H1: First through hole
H2: Second through hole
B1: First bonding medium
B2: Second bonding medium
40: Light emitting element
P1: first electrode pad
P2: second electrode pad
P: Punch
100: Light emitting device package
110: light guide plate
1000: Backlight unit

Claims (9)

delete delete delete delete delete Preparing a substrate including a lower electrode layer having a first electrode on one side and a second electrode on the other side of the electrode separation space, an adhesive layer formed above the lower electrode layer, and an insulating support layer above the adhesive layer, ;
A through hole forming step of forming a first through hole and a second through hole in the substrate such that a part of an upper surface of the first electrode of the lower electrode layer is exposed and a part of an upper surface of the second electrode is exposed;
A bonding medium filling step of filling a first bonding medium and a second bonding medium, which are conductive materials, in the first through holes and the second through holes; And
The first bonding medium and the first electrode pad are electrically connected to each other and the second bonding medium and the second electrode pad are electrically connected to each other so that the light emitting device is placed on the first bonding medium and the second bonding medium, A device seating step; Lt; / RTI >
Wherein the through hole forming step forms the first through hole and the second through hole by punching the adhesive layer and the insulating supporting layer of the substrate with a punch,
After the substrate preparation step,
A temporary substrate adhering step of adhering a temporary substrate with an adhesive to a lower surface of the substrate so as to temporarily support the substrate; Emitting device package. delete delete The method according to claim 6,
The adhesive is a UV adhesive capable of being cured and melted by UV light,
Wherein the temporary substrate is a transparent glass substrate through which the UV light can pass,
After the light emitting element seating step,
A temporary substrate removing step of irradiating the temporary substrate with UV light so as to melt the UV adhesive through the temporary substrate and removing the temporary substrate from the substrate; Emitting device package.

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