KR20150110910A - Light emitting device package, backlight unit, lighting device and its manufacturing method - Google Patents

Abstract

The present invention relates to a light emitting element package, a backlight unit, and a method to manufacture a lighting device and a light emitting element package. The present invention includes a substrate formed of an insulating mixture material mixed with a binder and radiation powder; an upper electrode layer formed on an upper surface of the substrate, and including a first channel formed of first and second electrode layers with a first electrode separation electrode; at least first light emitting element placed in an upper part of the substrate to be electrically connected to the first channel formed of the first and second layers of the upper electrode layer; a lower electrode layer formed on a lower surface of the substrate; and a side electrode layer formed on a side of the substrate, and electrically connecting the upper and lower electrode layers. At least one trim cutting surface is formed on a first side of the substrate and/or a third side, the opposite to the first side. The side electrode layer is able to be a plated layer plated on a second side of the substrate and/or the fourth side, the opposite to the second side.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package. More particularly, the present invention relates to a light emitting device package and a method of manufacturing the light emitting device package.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

However, the conventional light emitting device package uses a metal lead frame, a ceramic substrate, or a metal substrate. The manufacturing process and process are complicated and troublesome, such as using a large-capacity press for cutting or cutting a metal mold or a metal material , It is not easy to insulate the metal plate and it is difficult to form a pattern on the metal plate. As a result, the cost of the package is increased and the productivity and the formability are greatly deteriorated.

For example, in the case of using a conventional lead frame or metal substrate of a metal material, it is difficult to form the lead frame by tapping the metal mold or to change it easily once the metal mold is developed, There is a problem that the terminals are easily peeled off from the high temperature due to the difference in thermal expansion coefficient between the resin material of the lead frame and the metal material of the lead frame.

On the other hand, when a conventional ceramic substrate is used, metal interconnects of three-dimensionally very complicated shapes are required inside. In order to accomplish this, it is necessary to plastic-process the ceramic material, And the like.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a high heat dissipation package using a multi-chip and to use a mixture of a binder and a heat- The processes such as trimming, cutting, punching, sheet bonding, pattern formation, and molding are similar to conventional PCB manufacturing processes, so that it is very easy to use PCB equipment, and the package price is reduced by using relatively low- A light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package that can greatly improve the moldability such as multi-flip chip bonding, complicated pattern formation, and additional process do. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space; At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer; A lower electrode layer formed on a lower surface of the substrate; And a side surface electrode layer formed on a side surface of the substrate and electrically connecting the top surface electrode layer and the bottom electrode layer, wherein the first side surface and / or the third side surface of the substrate are at least one trimmed surface, And the side surface electrode layer may be a plating layer plated on the second side surface of the substrate and / or the fourth side surface opposite thereto.

According to an aspect of the present invention, the top surface electrode layer has a second channel including a third electrode layer and a fourth electrode layer having a second electrode separation space, and the side electrode layer has a first side At least one of which is seated above the substrate so as to be electrically connected to the second channel of the third electrode layer and the fourth electrode layer of the top electrode layer, the electrode layer and the second side electrode layer being connected to the second channel, And a second light emitting device.

According to an aspect of the present invention, the binder includes an epoxy-based resin, and the heat-dissipating powder includes at least one selected from ceramic powder, metal powder, metal powder coated with an insulator, Lt; / RTI >

According to an aspect of the present invention, the side electrode layer may be a plating layer plated along the inner wall of the through-hole formed in the substrate, and a part of the V-shaped groove may be formed on the upper or lower portion of the trimmed surface.

The light emitting device package according to the present invention may further include: an additional plating layer formed on the top electrode layer; A bonding medium disposed between the top electrode layer and the first light emitting device; A lower heat dissipation layer provided on a lower surface of the substrate; A lens or a phosphor provided in an optical path of the first light emitting device; And a guide part provided on the substrate or the upper surface electrode layer and guiding an installation position of the lens or the phosphor.

According to an aspect of the present invention, there is provided a backlight unit comprising: a substrate made of an insulating material mixed with a binder and a heat dissipating powder; A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space; At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer; A lower electrode layer formed on a lower surface of the substrate; A side electrode layer formed on a side surface of the substrate and electrically connecting the top electrode layer and the bottom electrode layer; And a light guide plate disposed on a light path of the first light emitting device, wherein at least one trim cut surface is formed on a first side surface and / or a third side surface opposite to the first surface side, And / or the fourth side opposite to the first side and / or the second side.

According to an aspect of the present invention, there is provided an illumination device comprising: a substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space; At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer; A lower electrode layer formed on a lower surface of the substrate; And a side surface electrode layer formed on a side surface of the substrate and electrically connecting the top surface electrode layer and the bottom electrode layer, wherein the first side surface and / or the third side surface of the substrate are at least one trimmed surface, And the side surface electrode layer may be a plating layer plated on the second side surface of the substrate and / or the fourth side surface opposite thereto.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, comprising: preparing an original plate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; Attaching an upper surface electrode layer sheet to an upper surface of the disk and attaching a lower surface electrode layer sheet to a lower surface of the disk; Drilling a plurality of penetrating windows parallel to each other in a first direction on the original plate having the top electrode layer sheet and the bottom electrode layer sheet attached thereto; Plating the plating layer to form a side electrode layer on the inner wall of the through-holes; Attaching a photosensitive mask film to the top electrode layer sheet or the bottom electrode layer sheet so as to form an electrode separation space or a pattern on the top electrode layer sheet or the bottom electrode sheet, And cutting the etched top electrode layer sheet, the bottom electrode layer sheet and the original plate into a unit package along a plurality of cutting lines formed in parallel to each other in a second direction different from the first direction.

A method of manufacturing a light emitting device package according to an aspect of the present invention is a method of manufacturing a light emitting device package including a plurality of cut lines formed in parallel with each other in a second direction different from the first direction, Cutting the V-groove part along the cutting line to the original plate or the top electrode layer sheet before cutting the unit package along the cutting line; Wherein at least one of the top electrode layer sheet, the bottom electrode layer sheet, the side electrode layer, the original plate, and the combination thereof is cut before the step of cutting the etched top electrode layer sheet, the bottom electrode sheet, A step of plating an additional plating layer on a surface of the substrate; And forming a bonding medium on the top electrode layer sheet.

According to an aspect of the present invention, before the step of cutting the etched upper surface electrode layer sheet, the lower surface electrode layer sheet, and the original plate into a unit package, the installation position of the lens or the phosphor is guided to the original or top surface electrode layer sheet Forming a guide portion; Placing at least one first light emitting element driven by a first channel and / or at least one second light emitting element driven by a second channel on the top surface electrode layer sheet; And installing the lens or the phosphor on the guide portion.

According to some embodiments of the present invention as described above, it is possible to facilitate multi-chip mounting by facilitating pattern formation, and it is possible to use a mixed material of a binder and a heat dissipating powder to provide excellent heat dissipation, And productivity can be greatly improved. In addition, it is possible to greatly reduce the production time and production cost by greatly improving the moldability such as multi-flip chip bonding, complicated pattern formation and additional process, and can produce a good quality product . Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view of a light emitting device package of FIG. 1 taken along line II-II.
3 is a cross-sectional view showing a III-III cross-sectional view of the light emitting device package of FIG.
FIGS. 4 to 19 are cross-sectional views illustrating a process of manufacturing the light emitting device package of FIG. 1 step by step.
20 is a cross-sectional view illustrating a light emitting device package according to some other embodiments of the present invention.
21 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
22 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
23 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
24 is a perspective view illustrating a light emitting device package according to still another embodiment of the present invention.
25 is a plan view showing a manufacturing process of the light emitting device package of FIG.
26 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.
27 is a flowchart showing a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view illustrating a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view showing a II-II cross section of the light emitting device package 100 of FIG. 1, and FIG. 3 is a cross-sectional view showing a III-III cross section of the light emitting device package 100 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a first light emitting device 20-1, An electrode layer 30, a bottom electrode layer 50, and a side electrode layer 40.

Here, the substrate 10 is made of an insulating mixed material in which a binder 11 and a heat dissipating powder 12 are mixed. The binder 11 includes an epoxy-based resin, and the heat dissipating powder 12 , At least one of ceramic powder 12-1, metal powder 12-2, metal powder 12-4 coated with insulator 12-3, and combinations thereof may be selected.

The substrate 10 can support the top electrode layer 30, the bottom electrode layer 50 and the side electrode layer 40 as well as the first light emitting device 20-1. And may be made of a mixed material having an appropriate mechanical strength for this purpose.

More specifically, for example, the substrate 10 may be formed of a resin, a glass, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Epoxy Mold Compound, white silicone, photoimageable solder resist Copper, zinc, tin, lead, gold, or the like, which is excellent in thermal conductivity and is coated with various insulators 12-3 such as an oxide layer, that is, Or a mixture of metal powders such as silver.

Here, the insulator 12-3 coated on the metal powder 12-4 is an insulating material that entirely surrounds the metal powder 12-4. For example, the insulator 12-3 may be formed by oxidizing the metal powder 12-4 . When the metal powder 12-4 includes aluminum in the metal, the insulator 12-3 may include alumina, which is aluminum oxide. Although various methods are available for such an oxidation method, an aluminum component may be oxidized on the surface of the metal powder 12-4 by using an anodizing method to form the insulator 12-3.

That is, the metal powder 12-4 may include an aluminum component, and the insulator 12-3 may be an aluminum oxide layer. In addition, the insulator 12-3 may be formed of silicon oxide, silicon nitride, or the like.

The substrate 10 may be an insulating substrate of a flexible printed material such as a printed circuit board (PCB), which is a mixture of the binder 11 and the heat dissipating powder 12, And may be an insulating substrate of a flexible printed circuit board (FPCB).

The binder 11 of the substrate 10 may be a mixture of thermoplastic, thermosetting or volatile materials that can be partially or wholly cured after being mixed with the heat dissipation powder 12.

Therefore, by using the substrate 10 using the mixed material of the binder 11 and the heat-dissipating powder 12, which is excellent in heat dissipation and relatively tighter than metal, by using the heat-dissipating powder 12, The processes such as trimming, cutting, punching, sheet bonding, pattern formation and molding are similar to the conventional PCB manufacturing process, and the existing PCB equipment can be modified and used very economically and the productivity can be greatly improved.

The first light emitting device 20-1 is mounted on the upper surface electrode layer 30 and has a flip chip shape having a first pad P1 and a second pad P2 LED (Light Emitting Diode).

The first light emitting device 20-1 may be formed of a semiconductor, as shown in FIG. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The first light emitting device 20-1 may be formed of a nitride such as InN, AlN, InGaN, AlGaN, or InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD The semiconductor can be epitaxially grown. The first light emitting device 20-1 may be formed of a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the first light emitting device 20-1 can be selected to have an arbitrary wavelength depending on the application such as display use or illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Herein, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the first light emitting device 20 may be in the form of a flip chip having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminals Or a light emitting element in which a bonding wire is applied to only a first terminal or a second terminal in part, or a horizontal or vertical type light emitting element.

In addition, the first pad P1 and the second pad P2 may be formed in various shapes other than the rectangular shape shown in FIG. 1, and may have a finger structure having a plurality of fingers on one arm have.

1, the first light emitting device 20-1 may be provided on the substrate 10, and a plurality of first light emitting devices 20-1 may be provided on the substrate 10 It is also possible.

1 to 3, the top electrode layer 30 is an electrode layer formed on the top surface of the substrate 10, and includes a first electrode layer 31 having a first electrode separation space A1 formed thereon, And a second electrode layer (32).

More specifically, for example, the first electrode layer 31 and the second electrode layer 32 may be formed on the upper surface of the substrate 10 so as to face the first light emitting device 20-1, The first electrode separation space (A1) may be formed between the first electrode layer (31) and the second electrode layer (32).

For example, as shown in FIG. 1, on the upper surface of the substrate 10, the first electrode layer 31 and the second electrode layer 31 are formed on both sides of the first electrode separation space A, The second electrode layer 32 may be formed.

1, a plurality of the first light emitting devices 20-1 (six in FIG. 1) may be arranged on one substrate 10 Even if the top electrode layer 30 is designed to have a very complicated shape, it is possible to freely form a pattern of the top electrode layer 30, for example, a copper foil sheet to be described later by using the conventional PCB equipment, , Large-power, multi-chip packages can be manufactured very easily.

1 to 3, the lower electrode layer 50 may be an electrode layer of a conductive material formed on the lower surface of the substrate 10. Although not shown, the bottom electrode layer 50 may be formed to correspond to a shape of an external power connection terminal or a module substrate so as to be electrically connected to an external power connection terminal or a module substrate.

The top electrode layer 30 and the bottom electrode layer 50 may be formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), platinum (Pt), aluminum (Al) A sheet attaching method in which a sheet having a predetermined thickness is attached to the upper surface and the lower surface of the substrate 10 and is pressed at a high temperature and a high pressure by using a hot press,

Therefore, the manufacturing process is very easy, such as using a hot press, which is a PCB device, similar to the conventional PCB manufacturing process, and a comparatively low-cost mixed material is used as the substrate 10 to reduce the package price, .

In addition, the top electrode layer 30 and the bottom electrode layer 50 may be formed using various processes such as various deposition processes, plating processes such as pulse plating and direct current plating, soldering processes, adhesion processes, and spray processes.

1 to 3, the side surface electrode layer 40 is formed on a side surface of the substrate 10 and electrically connects the top surface electrode layer 30 and the bottom electrode layer 50 to each other And may be a plated layer plated along a part of the inner wall of the penetrating window W formed in the substrate 10.

As shown in FIG. 1 and FIG. 2, the plating method can be performed by electroless plating or electrolytic plating only on the inner wall of the through window W, The plating may be partially or wholly electroless or electrolytic.

The side electrode layer 40 may be formed by plating a conductive paste such as a solder paste on the side surface of the substrate 10, by super-precise transfer, by ultra-precision stamping, In addition, various printing methods such as an inkjet printing method, a stencil printing method, and a squeeze printing method can be used.

As described above, the top electrode layer 30, the bottom electrode layer 50, and the side electrode layer 40 are formed of copper (Cu), gold (Au), silver (Ag), platinum (Pt) Al, solder, nickel, or the like, and may be formed using various processes such as plating with various sheets, vapor deposition, pulse plating or direct current plating, soldering, bonding, spraying .

1 to 3, the first side 10a of the substrate 10 and / or the third side 10c opposite to the first side 10a are formed with at least one trimmed section TC And the side surface electrode layer 40 may be a plating layer plated on the second side surface 10b of the substrate 10 and / or the fourth side surface 10d opposite thereto.

For example, the side electrode layer 40 is a plating layer plated along the inner wall of the penetrating window W formed in the substrate 10, and the V groove portion V is formed on the upper or lower portion of the trimmed cut surface TC. As shown in FIG.

Accordingly, in the light emitting device package 100 according to some embodiments of the present invention, the first side 10a of the substrate 10 and / or the third side 10c opposite to the first side 10a may have at least one trim Since the cut surface TC is formed and the side surface electrode layer 40 is plated on the second side surface 10b of the substrate 10 and / or the fourth side surface 10d opposite thereto, The light emitting device packages 100 can be produced easily and quickly at the same time.

In addition, since the side electrode layer 40 is a plating layer plated along the inner wall of the penetrating window W formed in the substrate 10, the side electrode layer 40 can be easily manufactured using a relatively simple plating process, Since a part of the V groove portion V is formed on the upper or lower portion of the trim cut surface TC, it is very easy to perform the cutting operation in the manual or automatic trim process, and the accuracy of the cut surface when cutting the cut line CL And can produce a large quantity of high quality products. In addition, the idea of the present invention can be widely applied to various packages or modules of the COB (Chip On Board) type or various mounting techniques.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes an additional plating layer 60, a bonding medium 70, a lower heat dissipation layer 80, And a lens 90 or a phosphor and a guide unit G. [

1 to 3, the additional plating layer 60 is formed on the top electrode layer 30 and includes, for example, the top electrode layer 30 and the bottom electrode layer 30, 50 and the side surface electrode layer 40 may be additionally provided on the outer surface of the top surface electrode layer 30 and the bottom electrode layer 50 and the side surface electrode layer 40 so as to be physically or electrically connected to each other .

In addition, the additional plating layer 60 may be a reflective layer formed only on the top electrode layer 30. Although not shown, the reflective layer may be formed of a reflective plating layer of silver (Ag), platinum (Pt), aluminum (Al), nickel, or the like having high reflectivity. Therefore, the physical and electrical characteristics of the package can be improved by using the additional plating layer 60, and the light efficiency of the package can be improved.

In addition to the plating method, the reflective layer may be formed by using a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin, a modified silicone resin composition such as an epoxy modified silicone resin, a polyimide resin composition, a modified polyimide resin composition, PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin and the like.

It is also possible to add a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, have.

In addition, although not shown, a separate sealing material made of various resin materials described above may be additionally molded on the substrate 10.

Here, the plurality of first light emitting devices 20-1 may be seated on the top electrode layer 30 or the additional plating layer 60 described above.

1 to 3, the bonding medium 70 is provided between the top electrode layer 30 and the first light emitting device 20-1, and the first light emitting device The first pad P1 and the second pad P2 of the upper electrode layer 20 are electrically connected to the first electrode 31 and the second electrode 32 of the top electrode layer 30, .

The bonding medium 70 may be AuSn, Sn, SAC (Sn-Ag-Cu) or the like which is a general eutectic bonding material and may be applied to the top electrode layer 30 Or solder paste or solder paste dispensed.

Therefore, the physical and electrical contact between the first light emitting device 20-1 and the top electrode layer 30 or the additional plating layer 60 can be improved by using the bonding medium 70. FIG.

In addition, the bonding medium 70 may be a conductive bonding medium that is in a flowable state during bonding such as a lead layer, a copper layer, an aluminum layer, and a solder layer, or any hardenable material that is cured upon cooling or heating or drying .

1 and 2, the lower surface heat dissipation layer 80 is provided on the lower surface of the substrate 10, and when the lower surface electrode layer 50 is formed, And may be electrically insulated from the lower electrode layer 50 or may be electrically connected to one of the polarities of the lower electrode layer 50.

Therefore, although not shown, the external heat path may be thermally connected to the heat dissipation layer 80 to easily dissipate the heat of the substrate 10 to the outside.

FIGS. 4 to 19 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 of FIG.

FIG. 4 is a plan view illustrating a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 5 is a cross-sectional view taken along line V-V of FIG.

First, as shown in FIG. 4 and FIG. 5, an original plate 1 made of an insulating mixed material in which a binder 11 and a heat dissipating powder 12 are mixed can be prepared.

In this case, the binder 11 may be an epoxy-based insulating resin, and the heat-dissipating powder 12 may be a ceramic powder or an insulated metal powder combined with the binder 11, The disk 1 may have a thickness of 50 to 500 micrometers (μm). For example, the size of the disk 1 may be 510 × 610 mm ² to 1020 × 1200 mm ² have.

FIG. 6 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 7 is a sectional view taken along line VII-VII of FIG.

Next, as shown in FIGS. 6 and 7, the upper surface electrode sheet 3 is pressed to the upper surface of the disk 1 at a high temperature and a high pressure by using a hot press, which is generally used as a PCB manufacturing equipment, And at the same time, the lower surface electrode sheet 5 can be pressed against the lower surface of the disk 1 at a high temperature and a high pressure so as to be thermally adhered and laminated.

At this time, for example, the upper surface electrode layer sheet 3 and the lower surface electrode sheet 5 may be made of copper or aluminum sheet of 10 to 100 micrometers (占 퐉).

FIG. 8 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 9 is a cross-sectional view taken along line IX-IX of FIG.

Next, as shown in FIGS. 8 and 9, the upper surface electrode layer sheet 3 and the upper surface electrode sheet 3 are formed using a general trim equipment, a mold, a drill, a router, an etching equipment, a cutting equipment, a punching equipment, It is possible to perforate the penetrating window W on the original plate 1 to which the electrode layer sheet 5 is attached.

The shape of the penetration window W may be variously formed, such as a circular hole, a square hole, a polygonal hole, an elliptical hole, a long hole, various geometric holes, etc. However, for mass and batch production, Likewise, they can be parallel to each other and long and long in the longitudinal direction. For example, the width of the penetrating window W may be 1 to 2 mm.

10 is a plan view illustrating a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 11 is a cross-sectional view taken along line XI-XI of FIG.

10 and 11, a plating layer may be plated on the inner wall of the through-hole W so that the side-surface electrode layer 40 is formed on the inner wall of the through-hole W using an electroless plating method have.

Here, the electroless plating method is also referred to as chemical plating or autocatalytic plating, in which a reducing agent such as formaldehyde or hydrazine in an aqueous solution supplies electrons such that metal ions are reduced to metal molecules, and this reaction can occur at the catalyst surface.

As the plating agent, copper, nickel-phosphorus, nickel-boron alloy, gold, silver and the like are available, and the plating layer is dense compared to electroplating, and can have a uniform thickness of approximately 25 탆.

In the electroless plating method, not only a conductor but also a graphite powder or the like may be painted on various objects to be processed such as a plastic or an organic material to partially apply the desired portion.

Further, after the electroless plating, the thickness of the plating layer can be further increased by using electrolytic plating again with electricity.

FIG. 12 is a plan view illustrating a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG.

Next, as shown in FIGS. 12 and 13, when it is desired to manufacture a package having high physical and electrical durability and reliability and high optical efficiency, at least the top electrode layer sheet 3, the bottom electrode layer sheet 5, An additional plating layer 60 made of silver, aluminum, gold or the like having a high reflectivity on the surface formed by selecting at least one of the above-mentioned side electrode layer 40, the original plate 1 and a combination thereof is partially or entirely coated .

FIG. 14 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 15 is a sectional view taken along the line XV-XV in FIG.

14 and 15, the upper surface electrode layer sheet 3 and the lower surface electrode layer sheet 5 are formed such that an electrode separation space A or a pattern is formed in the upper surface electrode layer sheet 3 or the lower surface electrode layer sheet 5, A photosensitive mask film may be attached to the electrode layer sheet 5 so that the top electrode layer sheet 3 and the bottom electrode layer sheet 5 can be selectively etched.

Although not shown, DFP (dry film photoresist) used when a printed circuit board or a TFT-LCD is manufactured can be applied to the photosensitive mask film.

When the photosensitive mask film is attached to the top surface electrode layer sheet 3 and the bottom electrode sheet 5, the electrode separation space A of the top surface electrode sheet 3 is exposed to the etching liquid, The penetrating window W may be sealed from the etchant so that the film M can protect the penetrating window W so as to preserve the side surface electrode layer 40 formed on the inner wall of the penetrating window W described above .

Next, the photosensitive mask film attached to the top electrode layer sheet 3 and the bottom electrode sheet 5 may be exposed and then etched with an etching solution.

15, a pattern may be formed on the lower electrode layer sheet 5 so that the lower surface heat dissipation layer 80 may be etched so as to be electrically insulated from the lower electrode layer 50. Referring to FIG.

16 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG.

16, the V-groove portion V may be previously cut along the cutting line CL1 in the disk 1 or the top surface electrode sheet 3, as shown in FIG.

Since the disk 1 is made of the binder 11 and the heat dissipating powder 12 which are relatively easy to cut, the cutting process can be performed by using a general trim device, a die, a drill, a router, It is very easy to cut by using equipment, cutting equipment, sawing equipment, punching equipment, laser drilling equipment.

For example, the width of the V groove portion V may be 0.2 to 0.5 mm.

FIG. 17 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG. 1, and FIG. 18 is a sectional view taken along the line XVII-XVII in FIG.

17 and 18, a bonding medium 70 such as solder paste, solder cream, or solder is applied, dispensed or printed to the top electrode layer sheet 3, A plurality of the first light emitting devices 20-1 may be placed on the bonding medium 70 of the sheet 3. [

The first light emitting device 20-1 may be mounted on the bonding medium 70 of the top surface electrode sheet 3 and then the first and second light emitting devices 20-1 and 20-2 may be cured or re- Process can proceed.

19 is a plan view showing a manufacturing process of the light emitting device package 100 of FIG.

19, the etched top electrode layer sheet 3, the bottom electrode sheet 5 and the original plate 1 may be cut along the cutting line CL1 in a unit package.

Since the disk 1 is made of the binder 11 and the heat dissipating powder 12 which are relatively easy to cut, the cutting process can be performed by using a general trim device, a die, a drill, a router, It is very easy to cut by using a cutting machine, a cutting machine, a punching machine, a laser drilling machine, or the like. Since the V groove portion V is formed in advance, it is very easy to cut by hand.

Therefore, it is possible to easily form a large-capacity package or module such as various multi-chip packages or COB package modules, and to form a highly heat-radiating package by using the above-mentioned heat- At the same time, the processes of trimming, cutting, punching, sheet bonding, pattern formation and molding are performed using a mixed material of the binder 11 and the heat radiation powder 12, which are relatively soft compared to metal, It is very easy to use PCB equipment, and it is possible to use a comparatively low-cost material as the substrate 10 to reduce the package price, to greatly improve the productivity, and the process is very easy, The moldability such as pattern formation and an additional process can be greatly improved.

20 is a cross-sectional view showing a light emitting device package 200 according to some other embodiments of the present invention, FIG. 21 is a sectional view showing a light emitting device package 300 according to still another embodiment of the present invention, 22 is a cross-sectional view illustrating a light emitting device package 400 according to still another embodiment of the present invention.

20, a light emitting device package 200 according to some embodiments of the present invention includes a lens 90 or a phosphor 90 installed in an optical path of the first light emitting device 20-1, And a guide unit G disposed on the substrate 10 or the top electrode layer 30 and guiding the position of the lens 90 or the phosphor.

Here, the lens 90 may guide the path of light generated in the first light emitting device 20-1, and may be a glass epoxy resin composition, a silicone resin composition, a modified epoxy resin such as a silicone modified epoxy resin Modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), epoxy resin, ABS resin, phenol resin, acrylic resin, PBT resin and the like can be applied.

The phosphor may be formed in the same shape as the lens 90 so as to substitute for the function of the lens 90 or may be contained in the lens 90 or may surround the periphery of the first light emitting device 20-1 As shown in Fig.

Such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

As a substitute for the phosphor, materials such as a quantum dot may be used. Alternatively, a fluorescent material and QD may be mixed with the LED or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the coating method of the fluorescent material or the quantum dot may include at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the material in a film form, a method of attaching a sheet form such as a film or a ceramic fluorescent material .

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the first light emitting device 20-1 or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding. .

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

In addition, although not shown, various other reflective members, light-transmitting encapsulants, and various other types of members such as an impervious encapsulant, a filter, a light guide plate, and a display panel are additionally installed around the first light emitting device 20-1 .

20, the ring-shaped guide dam G1 surrounding the upper electrode layer 30 is provided to guide the installation position of the lens 90 or the fluorescent material, Can be applied.

Here, the guide dam G1 may be formed on the upper electrode layer 30 or the upper surface of the substrate 10 by various methods such as molding, printing, dispensing, or etching.

21, the guide portion G includes a guide groove portion G2 formed around the upper electrode layer 30 so as to guide the lens 90 or the installation position of the fluorescent material. .

22, the guide portion G may include a guide step G3 formed concavely in the upper electrode layer 30 so as to guide the installation position of the lens 90 or the fluorescent material. .

Therefore, the lens material or the phosphor material can be applied or dispensed inside the guide portion G as a boundary.

23 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

16, a backlight unit 1000 according to some embodiments of the present invention includes a substrate 10 made of an insulating mixed material in which a binder 11 and a heat dissipating powder 12 are mixed, An upper electrode layer 30 formed on the upper surface of the upper electrode layer 10 and having a first channel formed of a first electrode layer 31 and a second electrode layer 32 having a first electrode separation space A1 formed thereon, At least one first light emitting device 20-1 mounted on the substrate 10 so as to be electrically connected to the first channel formed of the first electrode layer 31 and the second electrode layer 32 of the first electrode layer 30, A lower electrode layer 50 formed on a lower surface of the substrate 10 and a side electrode layer 50 formed on a side surface of the substrate 10 and electrically connecting the upper electrode layer 30 and the lower electrode layer 50. [ (40) and a light guide plate (110) provided in an optical path of the first light emitting device (20-1) At least one trimmed cut surface TC is formed on the first side 10a of the base substrate 10 and / or the third side 10c opposite thereto and the side electrode layer 40 is formed on the substrate 10, And / or a fourth side 10d opposite to the first side 10b.

1 to 22, the substrate 10, the top electrode layer 30, the bottom electrode layer 50, and the side electrode layer 40 may be formed by various methods of the present invention described above The functions and configurations of the light emitting device packages 100, 200, 300, and 400 according to the examples may be the same as those of the light emitting device package 100, 200, 300, Therefore, detailed description is omitted.

In addition, the light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the first light emitting device 20-1.

The light guide plate 110 may be installed in a path of light generated by the first light emitting device 20-1 to transmit light generated by the first light emitting device 20-1 over a wider area have.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

Although not shown, the present invention may include a lighting device including any one or more of the light emitting device packages 100, 200, 300, and 400 according to the technical idea of the present invention described above. Here, the components of the illumination device according to some embodiments of the present invention may have the same configuration and functions as those of the above-described light emitting device package 100 (200) 300, 400 of the present invention. Therefore, detailed description is omitted.

24 is a perspective view illustrating a light emitting device package 500 according to still another embodiment of the present invention.

24, the top electrode layer 30 of the light emitting device package 500 according to still another embodiment of the present invention includes a third electrode layer 33 formed with a second electrode separation space A2, And a second channel made of a fourth electrode layer (34), wherein the side electrode layer (40) has a first side electrode layer (40-1) connected to the first channel and a second side electrode layer (40-2) and is electrically connected to the second channel of the third electrode layer (33) and the fourth electrode layer (34) of the top electrode layer (30) on the substrate And at least one second light emitting device 20-2 that is seated.

Accordingly, the light emitting device package 500 according to still another embodiment of the present invention includes a plurality of first light emitting devices 20-1, which are independently controlled by the first channel, Channel and multi-chip packages in which a plurality of second light emitting devices 20-2 are independently controlled by a plurality of second light emitting devices 20-2.

25 is a plan view showing a manufacturing process of the light emitting device package 500 of FIG.

25, in order to manufacture the light emitting device package 500 according to still another embodiment of the present invention described above, the through windows W are continuously formed like a dotted line, A cutting line CL1 is formed along the V groove portion V and a cutting line CL2 is further formed along the penetrating windows W at an angle of 90 degrees with the cutting line CL1 .

Therefore, according to the present invention, it is possible to manufacture and manufacture a very complicated multi-chip and multi-channel type package by simply controlling the shape, position, size, and length of the through window W, .

26 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

26, a method of manufacturing a light emitting device package according to some embodiments of the present invention includes preparing an original plate 1 made of an insulating mixed material in which a binder 11 and a heat dissipating powder 12 are mixed A step S2 of attaching a top surface electrode sheet 3 to the top surface of the original plate 1 and attaching a bottom electrode sheet 5 to the bottom surface of the original plate 1, (S3) of perforating a plurality of through windows (W) parallel to each other in a first direction on the disk (1) having the top electrode layer sheet (3) and the bottom electrode layer sheet (5) (S4) plating the plating layer so that the side surface electrode layer (40) is formed on the inner wall of the penetrating window (W); and then plating the upper surface electrode layer sheet (3) or the lower surface electrode layer sheet ) A2 or a pattern is formed on the upper electrode sheet 3 or the lower electrode sheet 5 (V) is previously cut along the cutting line (CL1) to the original plate (1) or the top electrode sheet (3) (S5) A step S7 of forming a bonding medium 70 above the top electrode sheet 3 or the additional plating layer 60 and a step S7 of forming a bonding medium 70 on the top electrode sheet 3 or the additional plating layer 60, At least one first light emitting device 20-1 driven by a first channel and / or at least one second light emitting device 20-2 driven by a second channel above the first light emitting device 60 The lower electrode layer sheet 5 and the original plate 1 are cut along a plurality of cutting lines (in this case, the first direction and the second direction) formed in parallel with each other in the second direction different from the first direction (S9) cutting the package into unit packages along the first and second sides CL1.

27 is a flowchart showing a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

27, a method of fabricating a light emitting device package according to some embodiments of the present invention includes forming the upper electrode layer sheet 3, the lower electrode layer sheet 5, At least one of the upper surface electrode layer sheet 3, the lower surface electrode layer sheet 5, the side surface electrode layer 40, the original plate 1, and combinations thereof, before step S9, (Step S10) of plating an additional plating layer 60 on the surface of the upper electrode layer sheet 3 or the upper surface of the upper electrode layer sheet 3, and then guiding the lens 90 or the fluorescent substance mounting position (S11) of forming the guide portion (G), and a step (S12) of installing the lens (90) or the phosphor on the guide portion (G).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1: Disc
3: Top electrode layer sheet
5: Lower electrode layer sheet
10: substrate
10a: the first side
10b: second side
10c: Third aspect
10d: fourth side
20: Light emitting element
20-1: a first light emitting element
20-2: second light emitting element
11: Binder
12: Heat-resisting powder
A1: first electrode separation space
A2: Second electrode separation space
30: upper surface electrode layer
31: first electrode layer
32: second electrode layer
33: Third electrode layer
34: fourth electrode layer
40: side electrode layer
50: lower electrode layer
TC: trim trim
V: V groove
60: additional plating layer
70: bonding medium
80: lower heat radiating layer
90: lens
G: Guide section
CL1, CL2: Cutting line
100: Light emitting device package
1000: Backlight unit

Claims (10)

A substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space;
At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer;
A lower electrode layer formed on a lower surface of the substrate; And
And a side surface electrode layer formed on a side surface of the substrate and electrically connecting the top surface electrode layer and the bottom electrode layer,
Wherein the first side of the substrate and / or the third side opposite thereto is formed with at least one trim cut surface,
Wherein the side electrode layer is a plating layer plated on a second side surface of the substrate and / or a fourth side surface opposite thereto. The method according to claim 1,
Wherein the upper electrode layer has a second channel including a third electrode layer and a fourth electrode layer having a second electrode separation space,
Wherein the side surface electrode layer includes a first side surface electrode layer connected to the first channel and a second side surface electrode layer connected to the second channel,
At least one second light emitting device mounted above the substrate so as to be electrically connected to the second channel formed of the third electrode layer and the fourth electrode layer of the top electrode layer;
Emitting device package. The method according to claim 1,
Wherein the binder comprises an epoxy-based resin, and the heat-dissipating powder is selected from at least one of ceramic powder, metal powder, metal powder coated with an insulator, and combinations thereof. The method according to claim 1,
Wherein the side electrode layer is a plating layer plated along an inner wall of a penetrating window formed in the substrate,
And a part of the V-shaped groove is formed on an upper portion or a lower portion of the trim cut surface. The method according to claim 1,
An additional plating layer formed on the top electrode layer;
A bonding medium disposed between the top electrode layer and the first light emitting device;
A lower heat dissipation layer provided on a lower surface of the substrate;
A lens or a phosphor provided in an optical path of the first light emitting device; And
A guide part provided on the substrate or the upper surface electrode layer and guiding an installation position of the lens or the phosphor;
Emitting device package. A substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space;
At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer;
A lower electrode layer formed on a lower surface of the substrate;
A side electrode layer formed on a side surface of the substrate and electrically connecting the top electrode layer and the bottom electrode layer; And
And a light guide plate installed in an optical path of the first light emitting device,
Wherein the first side of the substrate and / or the third side opposite thereto is formed with at least one trim cut surface,
Wherein the side surface electrode layer is a plating layer plated on a second side surface of the substrate and / or a fourth side surface opposite thereto. A substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
A top electrode layer formed on an upper surface of the substrate and having a first channel including a first electrode layer and a second electrode layer having a first electrode separation space;
At least one first light emitting element mounted above the substrate so as to be electrically connected to the first channel formed of the first electrode layer and the second electrode layer of the top electrode layer;
A lower electrode layer formed on a lower surface of the substrate; And
And a side surface electrode layer formed on a side surface of the substrate and electrically connecting the top surface electrode layer and the bottom electrode layer,
Wherein the first side of the substrate and / or the third side opposite thereto is formed with at least one trim cut surface,
Wherein the side surface electrode layer is a plating layer plated on a second side surface of the substrate and / or a fourth side surface opposite thereto. Preparing an original plate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
Attaching an upper surface electrode layer sheet to an upper surface of the disk and attaching a lower surface electrode layer sheet to a lower surface of the disk;
Drilling a plurality of penetrating windows parallel to each other in a first direction on the original plate having the top electrode layer sheet and the bottom electrode layer sheet attached thereto;
Plating the plating layer to form a side electrode layer on the inner wall of the through-holes;
Attaching a photosensitive mask film to the top electrode layer sheet or the bottom electrode layer sheet so as to form an electrode separation space or a pattern on the top electrode layer sheet or the bottom electrode sheet, And
Cutting the etched top electrode layer sheet, the bottom electrode layer sheet and the original plate into a unit package along a plurality of cutting lines formed in parallel to each other in a second direction different from the first direction;
Emitting device package. 9. The method of claim 8,
The step of cutting the etched top electrode layer sheet, the bottom electrode layer sheet and the original plate into a unit package along a plurality of cutting lines formed in parallel to each other in a second direction different from the first direction, Cutting the V groove part in advance along the cutting line on the electrode layer sheet;
Wherein at least one of the top electrode layer sheet, the bottom electrode layer sheet, the side electrode layer, the original plate, and the combination thereof is cut before the step of cutting the etched top electrode layer sheet, the bottom electrode sheet, A step of plating an additional plating layer on a surface of the substrate; And
Forming a bonding medium on the top electrode layer sheet;
Emitting device package. 9. The method of claim 8,
Forming a guide portion for guiding a mounting position of a lens or a phosphor on the original or top electrode layer sheet before cutting the etched top electrode layer sheet, the bottom electrode layer sheet, and the original plate into a unit package;
Placing at least one first light emitting element driven by a first channel and / or at least one second light emitting element driven by a second channel above the top surface electrode layer sheet; And
Installing the lens or the phosphor on the guide portion;
Emitting device package.

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