KR101649298B1 - Multi-chip light emitting device, multi-chip light emitting device package and backlight unit - Google Patents

Abstract

The present invention relates to a multi-chip light emitting device, a multi-chip light emitting device package, and a backlight unit, which can be used for display or illumination, And a second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength

Description

The present invention relates to a multi-chip light emitting device, a multi-chip light emitting device package, and a backlight unit.

The present invention relates to a multi-chip light emitting device, a multi-chip light emitting device package, and a backlight unit, and more particularly, to a multi-chip light emitting device and a multi- will be.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

Conventional light emitting device packaging processes for realizing white light include a process of mounting a plurality of chips emitting lights of different wavelengths in one package, or installing phosphors after chip mounting.

However, such a conventional method of manufacturing a light emitting device package has a problem in that it has a limitation in minimizing a half width of a color and high color reproducibility.

In addition, due to the provision of a plurality of chips and phosphors, the light emitting device package is made small and ultra-thin, resulting in an increase in the price of the product and a decrease in productivity. The resulting light emitting device packages are relatively large in size and thickness, There has been a problem in that it can not be miniaturized and super thinned.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a multi-chip light emitting device having a red, green and blue wavelengths close to each other, A white light source can be effectively formed because a white light source can be sufficiently formed even if the red and green wavelengths are smaller than the blue wavelength or the size of the light source is small. Accordingly, an object of the present invention is to provide a multi-chip light emitting device, a multi-chip light emitting device package, a backlight unit device, and a manufacturing method that can improve color reproducibility, improve productivity, and miniaturize a product. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a multi-chip light emitting device including: a first light emitting device capable of emitting light of a first wavelength; And a second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Wherein the first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on a lower surface thereof and a 1-3 second electrode pad on a top surface thereof, 1-1 electrode pad or the 1-2 second electrode pad, and the second light emitting element has a 2-1 electrode pad on the lower surface, and a 2-2 electrode pad on the upper surface, And may be electrically connected to the second-1 electrode pad on the lower surface and the first-third electrode pad of the first light emitting device.

According to an aspect of the present invention, there is provided a flip chip light emitting element capable of emitting light of the first wavelength, which is one of red, blue or green wavelengths, and the second light emitting element is one of red, The light emitting device may be a vertical type light emitting device capable of generating light of the second wavelength.

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According to an aspect of the present invention, there is provided a multi-chip light emitting device package including: a substrate; And a multi-chip light emitting device mounted on the substrate, wherein the multi-chip light emitting device comprises: a first light emitting device capable of generating light of a first wavelength; And a second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Wherein the first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on a bottom surface and a 1-3 first electrode pad on a top surface to be connected to the substrate, A through electrode capable of electrically connecting the three-electrode pad and the first 1-1 electrode pad or the 1-2 second electrode pad is formed, the second light emitting device has a second-1 electrode pad on the bottom surface, And a second-2 electrode pad, and may be electrically connected to the second-1 electrode pad on the lower surface and the first-third electrode pad of the first light emitting device.

According to another aspect of the present invention, there is provided a backlight unit comprising: a substrate; A multi-chip light emitting device mounted on the substrate; And a light guide plate installed in an optical path of the multi-chip light emitting device, wherein the multi-chip light emitting device includes a first light emitting device capable of generating light of a first wavelength; And a second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Wherein the first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on a bottom surface and a 1-3 first electrode pad on a top surface to be connected to the substrate, A through electrode capable of electrically connecting the three-electrode pad and the first 1-1 electrode pad or the 1-2 second electrode pad is formed, the second light emitting device has a second-1 electrode pad on the bottom surface, And a second-2 electrode pad, and may be electrically connected to the second-1 electrode pad on the lower surface and the first-third electrode pad of the first light emitting device.

According to an embodiment of the present invention as described above, since the distance of the red, green, and blue wavelengths is close to each other, the white light source can be easily displayed, and the red and green wavelengths are smaller than the blue wavelength, A multi-chip light emitting device which can improve the color reproducibility, improve the productivity and miniaturize the product, and the multi-chip light emitting device package and the backlight Unit. ≪ / RTI > Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a multi-chip light emitting device according to some embodiments of the present invention.
2 is a perspective view showing a multi-chip light emitting device according to some other embodiments of the present invention.
3 is a perspective view showing a multi-chip light emitting device according to still another embodiment of the present invention.
4 is a perspective view showing a multi-chip light emitting device according to still another embodiment of the present invention.
5 is a perspective view showing a multi-chip light emitting device according to still another embodiment of the present invention.
6 is a perspective view showing a multi-chip light emitting device according to still another embodiment of the present invention.
7 is a cross-sectional view illustrating a multi-chip light emitting device and a multi-chip light emitting device package according to some embodiments of the present invention.
8 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
9 is a perspective view showing the multi-chip light emitting device of FIG.
10 is a perspective view showing the multi-chip light emitting device of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, in the figures, when the element is turned over, the elements depicted as being on the upper surface of the other elements are oriented on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

FIG. 1 is a perspective view showing a multi-chip light emitting device 100 according to some embodiments of the present invention, and FIG. 9 is a perspective view showing a multi-chip light emitting device 100 of FIG.

First, as shown in FIGS. 1 and 9, the multi-chip light emitting device 100 according to some embodiments of the present invention includes a first light emitting device 10 and a second light emitting device 20 .

For example, the first light emitting device 10 may generate light of a first wavelength, the second light emitting device 20 may be mounted on the first light emitting device 10, Can be generated.

The first light emitting device 10 has a first electrode pad 11 and a first electrode pad 12 on the upper surface thereof and is capable of generating light of a first wavelength, The light emitting element 20 has a second-first electrode pad 21 on the lower surface thereof, a second-second electrode pad 22 on the upper surface thereof, and the second- 1 electrode pad 11 of the light emitting element 10 and can generate light of the second wavelength.

The first light emitting device 10 is a horizontal light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths. The second light emitting device 20 is a red , A blue or green wavelength, and is capable of generating light of the second wavelength, which is the same wavelength as the first wavelength.

For example, as shown in FIG. 1, the multi-chip light emitting device 100 may be configured such that the first light emitting device 10 and the second light emitting device 20 are combined into light having the same wavelength, The device 100 can generate light having the same wavelength.

More specifically, for example, the multi-chip light emitting device 100 includes the first light emitting device 10 that generates light of a blue wavelength and the second light emitting device 20 that generates light of a blue wavelength So that blue light of a larger wavelength can be generated.

Accordingly, in the multi-chip light emitting device 100, the first light emitting device 10 and the second light emitting device 20 can be combined with light having the same wavelength to generate light having a larger wavelength.

1, the first light emitting device 10 and the second light emitting device 20 emit light of red, green, or other wavelengths in addition to the light of the blue wavelength, All of the light emitting elements having the same function can be applied.

The first 1-1 electrode pad 11, the 1-2 first electrode pad 12, the 2-1 electrode pad 21 and the 2-2 second electrode pad 22 are formed in a rectangular shape It may be deformed into various shapes other than the plate shape, for example, a finger structure or a bump structure having a plurality of fingers on one arm.

The first light emitting device 10 and the second light emitting device 20 may include active layers 14 and 24 as shown in FIG.

The active layer 14 and the active layer 14 are a light emitting portion in which electrons and holes meet when a current flows through the first and second light emitting devices 10 and 20 to form a multiple quantum well structure It has a unique color depending on the material.

2 is a perspective view showing a multi-chip light emitting device 101 according to some other embodiments of the present invention.

The multi-chip light emitting device 101 according to some embodiments of the present invention may include a first light emitting device 10 and a second light emitting device 20 as shown in FIG.

More specifically, for example, the first light emitting device 10 is a horizontal light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths, 20 may be a vertical type light emitting device capable of generating light of the second wavelength, which is one of red, blue, and green wavelengths and is a wavelength different from the first wavelength.

2, the first light emitting device 10 and the second light emitting device 20 are coupled to light having different wavelengths, and the first light emitting device 10 and the second light emitting device 20 are coupled to each other, The device 10 and the second light emitting device 20 can emit light of different wavelengths.

FIG. 3 is a perspective view showing a multi-chip light emitting device 200 according to still another embodiment of the present invention, and FIG. 10 is a perspective view showing the multi-chip light emitting device 200 of FIG.

3, the multi-chip light emitting device 200 has the 3-1 electrode pad 31 on the bottom surface, the 3-2 electrode pad 32 on the top surface thereof, The third electrode pad 31 is connected to the first electrode pad 12 of the first light emitting element 10 and the third light emitting element 30 ).

The first light emitting device 10 is a horizontal light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths. The second light emitting device 20 is a red And the third light emitting element 30 is a vertical type light emitting element capable of generating light of the second wavelength which is one of blue or green wavelengths and is the same wavelength as the first wavelength, And a vertical light emitting device capable of generating light of the third wavelength, which is one of the wavelengths, which is the same as the first wavelength and the second wavelength.

10, the first light emitting device 10, the second light emitting device 20, and the third light emitting device 30 include the active layers 14, 24, and 34 can do.

When the current flows through the first light emitting device 10, the second light emitting device 20, and the third light emitting device 30, the active layer 14, 24, It is a light emitting part where light is generated and has a multiple quantum well structure and exhibits a unique color depending on the material.

Accordingly, the multi-chip light emitting device 200 includes the first light emitting device 10 for emitting blue wavelength light, the second light emitting device 20 for emitting blue wavelength light, and the blue wavelength light And the third light emitting device 30 generating the blue light can generate blue light having a larger wavelength.

4 is a perspective view showing a multi-chip light emitting device 201 according to still another embodiment of the present invention.

The multi-chip light emitting device 201 according to still another embodiment of the present invention has the 3-1 electrode pad 31 on the lower surface and the 3-2 electrode pad 32 on the upper surface And the 3-1 electrode pad 31 on the lower surface is connected to the 1-2 electrode pad 12 of the first light emitting element 10, And may further include a third light emitting device 30.

The first light emitting device 10 is a horizontal light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths. The second light emitting device 20 is a red And the third light emitting element 30 is a vertical type light emitting element capable of generating light of the second wavelength which is one of blue or green wavelengths and is different from the first wavelength, And a vertical type light emitting device that is capable of generating light of the third wavelength, which is the same as the first wavelength and is different from the second wavelength.

Accordingly, in the multi-chip light emitting device 201, the first light emitting device 10 for generating light of a blue wavelength and the second light emitting device 20 for generating light of a blue wavelength are combined, The third light emitting device 30 having light may be coupled to generate light having another wavelength.

5 is a perspective view illustrating a multi-chip light emitting device 202 according to some further embodiments of the present invention.

The multi-chip light emitting device 202 according to still another embodiment of the present invention has the 3-1 electrode pad 31 on the lower surface and the 3-2 electrode pad 32 on the upper surface And the 3-1 electrode pad 31 on the lower surface is connected to the 1-2 electrode pad 12 of the first light emitting element 10, And may further include a third light emitting device 30.

The first light emitting device 10 is a horizontal light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths. The second light emitting device 20 is a red And the third light emitting element 30 is a vertical type light emitting element capable of generating light of the second wavelength which is one of blue or green wavelengths and is different from the first wavelength, And a vertical type light emitting device capable of generating light of the third wavelength, which is one of the wavelengths, which is different from the first wavelength and the second wavelength.

Therefore, in the multi-chip light emitting device 202, the first light emitting device 10, the second light emitting device 20, and the third light emitting device are coupled to light of different wavelengths, The second light emitting device 20 and the third light emitting device 30 can generate light having a wavelength different from that of the first light emitting device 10, the second light emitting device 20, and the third light emitting device 30.

6 is a perspective view showing a multi-chip light emitting device 300 according to still another embodiment of the present invention.

6, the multi-chip light emitting device 300 according to still another embodiment of the present invention may include a first light emitting device 10 and a second light emitting device 20 have.

The first light emitting device 10 has the first 1-1 electrode pad 11 and the 1-2 first electrode pad 12 on the bottom surface thereof and the 1-3 first electrode pad 13 on the top surface thereof A through electrode 40 is formed to electrically connect the first 1-3 electrode pad 13 and the 1-1 second electrode pad 11 or the 1-2 second electrode pad 12, The second light emitting element 20 has the second-1 electrode pad 21 on the lower surface thereof, the second-second electrode pad 22 on the upper surface thereof, and the second- And the first to third electrode pads 13 of the first light emitting device 10 may be electrically connected to each other.

Therefore, the first light emitting device 10 in a flip chip form and the second light emitting device in a vertical form can be electrically connected.

6, a bonding wire may be applied to the terminals of the first light emitting device 10, or the first 1-1 electrode pad 11 or the 1-2 first electrode pad 12 may be partially used, And a flip chip light emitting device having a signal transmitting medium such as a pump or a solder may be used in addition to the pad.

More specifically, for example, as shown in FIGS. 1 to 6, the first light emitting device 10 has the first 1-1 electrode pad 11 or the 1-2 first electrode pad 12 And a flip chip type LED (Light Emitting Diode) electrically connected to the substrate 50, which will be described later, using a bonding medium.

Although not shown in the drawing, the first electrode pad 11, the first electrode pad 12, the first electrode pad 13, the second electrode pad 21, Chip type having a signal transmission medium such as a pump or a solder in addition to the 2-2 electrode pad 22, the 3-1 electrode pad 31 and the 3-2 electrode pad 32, A light emitting device in which a bonding wire is applied to only one of the electrode pads on one side or a horizontal type or vertical type light emitting device can be applied.

The first electrode pad 11, the first electrode pad 12, the first electrode pad 13, the second electrode pad 21, the second electrode 2, The pad 22, the 3-1 electrode pad 31 and the 3-2 electrode pad 32 may be modified into various shapes other than the shapes shown in FIGS. 1 through 6, for example, A finger structure having a plurality of fingers, a bump structure, or the like.

The first light emitting device 10, the second light emitting device 20, and the third light emitting device 30 may be made of a semiconductor, as shown in FIGS. 1 to 6. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The first light emitting device 10, the second light emitting device 20 and the third light emitting device 30 can be formed by a vapor phase growth method such as MOCVD or the like using a sapphire substrate for growth, A nitride semiconductor such as InN, AlN, InGaN, AlGaN, or InGaAlN may be epitaxially grown on the carbide substrate. The first light emitting device 10, the second light emitting device 20 and the third light emitting device 30 may be formed of a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, AlInGaP, Can be formed. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. The first light emitting device 10, the second light emitting device 20, and the third light emitting device 30 can be selected to have arbitrary wavelengths depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

Since the external quantum efficiency of the light emitting device is lowered by absorbing light generated from the GaN-based semiconductor, the Si (silicon) substrate may be removed, if necessary, and Si, Ge, SiAl, Or a support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB ₂ , HfB ₂ , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the first light emitting device 10, the second light emitting device 20, and the third light emitting device 30 may emit light having a wavelength other than red, blue, All of the devices can be applied.

7 is a cross-sectional view illustrating a multi-chip light emitting device 100 and a multi-chip light emitting device package 1000 according to some embodiments of the present invention.

The multi-chip light emitting device package 1000 according to some embodiments of the present invention includes a substrate 50 and a multi-chip light emitting device 100 mounted on the substrate 50 as shown in FIG. can do.

More specifically, for example, the substrate 50 may be made of a material or a conductive material having appropriate mechanical strength and insulation that can support or accommodate the multi-chip light emitting device 100.

In addition, the substrate 50 may include a lead frame.

For example, the lead frame may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold, or silver, and may be in the form of a perforated or bent plate.

In order to maximize the reflectance, the lead frame is formed with at least silver (Ag), silver (Ag), silver (Ag) alloy, (Al) alloy, an Al alloy layer, a Cu alloy, a Cu alloy layer, a Cu alloy layer, a Pt alloy, a Pt alloy, a Pt alloy, A reflective layer formed by selecting at least one of an alloy layer, gold (Au), gold (Au) plating layer, gold (Au) alloy layer, palladium (Pd), ruthenium (Ru), rhodium (Rh) Can be installed.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers may be applied instead of the lead frame. The lead frame may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, instead of the lead frame, a synthetic resin substrate such as a resin or a glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the lead frame may be formed by partially or wholly selecting at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof .

Here, the multi-chip light emitting device 100 includes the multi-chip light emitting device 100, 101, 200, 201, 202, 300 May be the same in composition and function as those of the components. Therefore, detailed description is omitted.

8 is a cross-sectional view illustrating a backlight unit 2000 according to some embodiments of the present invention.

8, a backlight unit 2000 according to some embodiments of the present invention includes a substrate 50 and a multi-chip light emitting device 100 and a light guide plate (not shown) 60).

Here, the multi-chip light emitting device 100 and the substrate 50 may include the multi-chip light emitting devices 100, 101, 200, and 201 according to various embodiments of the present invention shown in FIGS. 1 to 7 (202) 300 and the multi-chip light emitting device package 1000 may have the same configuration and function as the components of the multi-chip light emitting device package 1000. Therefore, detailed description is omitted.

The light guide plate 60 may be installed in the optical path of the multi-chip light emitting device 100.

More specifically, for example, the light guide plate 60 may be formed of a material such as polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester And the like. In addition, materials of various translucent resin types may be applied. The light guide plate 60 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 60. In addition, various display panels such as an LCD panel may be provided above the light guide plate 60. [

Meanwhile, the present invention may include a lighting device or a display device including the multi-chip light emitting device package 1000 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

Therefore, the multi-chip light-emitting device 100 of the present invention is easy to express a white light source because the distance of blue, red, or green wavelength is short, and the red and green wavelengths are smaller than the blue light- A white light source can be formed sufficiently even if the size of the white light source is small.

Therefore, the color reproducibility is improved, the productivity is improved, and a miniaturized product can be produced.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: First light emitting element
20: second light emitting element
30: Third light emitting element
40: penetrating electrode
50: substrate
60: light guide plate
100, 200, 300: Multichip light emitting device
1000: Multichip light emitting device package
2000: backlight unit

Claims (10)

A first light emitting element capable of generating light of a first wavelength; And
A second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Lt; / RTI >
The first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on the bottom surface and a 1-3 first electrode pad on the top surface, A through electrode capable of electrically connecting the pad or the first-second electrode pad is formed,
The second light emitting device has a second-electrode pad on the lower surface, a second-electrode pad on the upper surface, a second electrode pad on the lower surface, And electrically connected to the electrode pad. delete delete delete delete delete delete The method according to claim 1,
Wherein the first light emitting device is a flip chip light emitting device capable of generating light of the first wavelength, which is one of red, blue, and green wavelengths,
Wherein the second light emitting device is a vertical light emitting device capable of generating light of the second wavelength, which is one of red, blue, and green wavelengths. Board; And
And a multi-chip light emitting device mounted on the substrate,
The multi-chip light emitting device
A first light emitting element capable of generating light of a first wavelength; And
A second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Lt; / RTI >
The first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on a bottom surface and a 1-3 second electrode pad on a top surface to be connected to the substrate, A through electrode capable of electrically connecting the first 1-1 electrode pad or the 1-2 first electrode pad is formed,
The second light emitting device has a second-electrode pad on the lower surface, a second-electrode pad on the upper surface, a second electrode pad on the lower surface, And electrically connected to the electrode pad. Board;
A multi-chip light emitting device mounted on the substrate; And
And a light guide plate installed in an optical path of the multi-chip light emitting device,
The multi-chip light emitting device
A first light emitting element capable of generating light of a first wavelength; And
A second light emitting device mounted on the first light emitting device and capable of generating light of a second wavelength; Lt; / RTI >
The first light emitting device has a 1-1 electrode pad and a 1-2 first electrode pad on a bottom surface and a 1-3 second electrode pad on a top surface to be connected to the substrate, A through electrode capable of electrically connecting the first 1-1 electrode pad or the 1-2 first electrode pad is formed,
The second light emitting device has a second-electrode pad on the lower surface, a second-electrode pad on the upper surface, a second electrode pad on the lower surface, The backlight unit is electrically connected to the electrode pad.

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