KR101601363B1 - 파워 사이클 시험을 위한 장치 및 방법 - Google Patents

파워 사이클 시험을 위한 장치 및 방법 Download PDF

Info

Publication number
KR101601363B1
KR101601363B1 KR1020130079765A KR20130079765A KR101601363B1 KR 101601363 B1 KR101601363 B1 KR 101601363B1 KR 1020130079765 A KR1020130079765 A KR 1020130079765A KR 20130079765 A KR20130079765 A KR 20130079765A KR 101601363 B1 KR101601363 B1 KR 101601363B1
Authority
KR
South Korea
Prior art keywords
igbt
test
current
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130079765A
Other languages
English (en)
Korean (ko)
Other versions
KR20140011471A (ko
Inventor
미치야 구사카
Original Assignee
에스펙 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스펙 가부시키가이샤 filed Critical 에스펙 가부시키가이샤
Publication of KR20140011471A publication Critical patent/KR20140011471A/ko
Application granted granted Critical
Publication of KR101601363B1 publication Critical patent/KR101601363B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1020130079765A 2012-07-18 2013-07-08 파워 사이클 시험을 위한 장치 및 방법 Active KR101601363B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012159273A JP5829986B2 (ja) 2012-07-18 2012-07-18 パワーサイクル試験装置
JPJP-P-2012-159273 2012-07-18

Publications (2)

Publication Number Publication Date
KR20140011471A KR20140011471A (ko) 2014-01-28
KR101601363B1 true KR101601363B1 (ko) 2016-03-08

Family

ID=49946032

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130079765A Active KR101601363B1 (ko) 2012-07-18 2013-07-08 파워 사이클 시험을 위한 장치 및 방법

Country Status (3)

Country Link
US (1) US9453872B2 (https=)
JP (1) JP5829986B2 (https=)
KR (1) KR101601363B1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104251965B (zh) * 2014-09-24 2017-07-04 河北工业大学 一种igbt动态性能测试装置及其运行方法
JP6275629B2 (ja) * 2014-12-08 2018-02-07 エスペック株式会社 パワーサイクル試験装置およびパワーサイクル試験方法
JP6275631B2 (ja) * 2014-12-12 2018-02-07 エスペック株式会社 パワーサイクル試験装置およびパワーサイクル試験方法
CN104566818B (zh) * 2014-12-26 2017-10-31 广东美的制冷设备有限公司 空调器温度应力的监控方法和系统
CN104566819B (zh) * 2014-12-26 2017-05-10 广东美的制冷设备有限公司 空调器温度应力的监控方法和系统
US10338518B2 (en) * 2016-07-29 2019-07-02 Lexmark International, Inc. Redundant electrical contact between a fastener and a component
CN108051724B (zh) * 2018-01-09 2024-10-08 深圳市振华微电子有限公司 功率模块间歇工作寿命试验系统及方法
CN110134100B (zh) * 2018-02-08 2020-09-01 郑州宇通客车股份有限公司 一种电机控制器加速寿命检测方法及装置
RU2685769C1 (ru) * 2018-07-03 2019-04-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский Мордовский государственный университет им. Н.П. Огарёва" Способ определения переходного теплового сопротивления кристалл-корпус и теплового сопротивления кристалл-корпус в состоянии теплового равновесия транзисторов с полевым управлением
CN109342913B (zh) * 2018-10-23 2021-07-30 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Igbt结温监控系统
CN109521347B (zh) * 2018-10-28 2021-11-26 北京工业大学 多个汽车级igbt模块同步pwm功率循环实验装置
JP2020176851A (ja) * 2019-04-16 2020-10-29 株式会社クオルテック 半導体試験装置および半導体素子の試験方法。
JP7306710B2 (ja) * 2019-07-05 2023-07-11 株式会社クオルテック 電気素子試験装置
JP7343180B2 (ja) * 2019-08-07 2023-09-12 株式会社クオルテック 電気素子試験装置
CN110456264B (zh) * 2019-08-16 2021-07-30 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 大功率器件功率循环试验结温监测方法、装置和系统
CN110568338A (zh) * 2019-10-18 2019-12-13 厦门芯泰达集成电路有限公司 一种用于高分子聚合物正系数温度元件的测试装置
CN110907726B (zh) * 2019-11-25 2022-03-25 中国第一汽车股份有限公司 车用控制器热测试系统及方法
CN111289868A (zh) * 2020-03-30 2020-06-16 国网福建省电力有限公司电力科学研究院 一种具有饱和导通压降测试电路的igbt测试系统
JP7419948B2 (ja) * 2020-04-16 2024-01-23 株式会社デンソー 内燃機関の点火装置
CN112491250A (zh) * 2020-11-26 2021-03-12 电子科技大学 一种估算igbt开关转换时间的方法
CN112505526B (zh) * 2020-12-06 2023-06-23 北京工业大学 一种大功率模块内部多芯片温度分布均匀性的评测方法
CN113561778A (zh) * 2021-06-29 2021-10-29 国网天津市电力公司电力科学研究院 一种电动汽车igbt功率模块过热及功率循环控制方法
CN113406470B (zh) * 2021-08-19 2021-10-29 浙江杭可仪器有限公司 一种测试igbt的装置
CN114217261B (zh) * 2021-12-15 2022-09-09 浙江大学 一种用于功率循环测试的功率器件老化参数校正方法
JP7793405B2 (ja) 2022-02-08 2026-01-05 株式会社東芝 電力変換器の診断装置、診断システム、診断方法、及び、診断プログラム
CN114325062B (zh) * 2022-03-10 2022-06-10 杭州飞仕得科技有限公司 一种功率模组的电流测试方法
CN115290945B (zh) * 2022-09-29 2022-12-23 山东阅芯电子科技有限公司 功率循环测试用高精度测试电流源及方法
CN116008764A (zh) * 2022-12-26 2023-04-25 株洲中车时代半导体有限公司 功率芯片功率循环试验装置及方法
CN116087736B (zh) * 2023-03-02 2025-10-10 中国科学院电工研究所 一种碳化硅器件功率循环测试电路及控制方法
CN117148083B (zh) * 2023-06-15 2024-03-08 杭州高裕电子科技股份有限公司 一种sic功率循环测试方法
CN118330271A (zh) * 2024-06-14 2024-07-12 浙江杭可仪器有限公司 一种测试平台外置的igbt功率循环测试设备
US12497855B1 (en) * 2024-06-18 2025-12-16 Halliburton Energy Services, Inc. Shear resistant swellable packers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000074982A (ja) * 1998-09-01 2000-03-14 Honda Motor Co Ltd 電力用半導体の熱ストレス試験装置
JP2000171491A (ja) * 1998-12-03 2000-06-23 Mitsubishi Electric Corp パワー半導体モジュール
JP2003130920A (ja) * 2001-10-29 2003-05-08 Fujitsu Ten Ltd パワーモジュールの繰返し耐久試験方法および試験装置
JP2007278910A (ja) * 2006-04-10 2007-10-25 Fuji Electric Device Technology Co Ltd 検査方法及び検査装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06281693A (ja) 1992-08-28 1994-10-07 Fuji Electric Co Ltd 半導体装置の熱抵抗測定方法
JP2012088154A (ja) 2010-10-19 2012-05-10 Mitsubishi Electric Corp パワーサイクル試験装置およびパワーサイクル試験方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000074982A (ja) * 1998-09-01 2000-03-14 Honda Motor Co Ltd 電力用半導体の熱ストレス試験装置
JP2000171491A (ja) * 1998-12-03 2000-06-23 Mitsubishi Electric Corp パワー半導体モジュール
JP2003130920A (ja) * 2001-10-29 2003-05-08 Fujitsu Ten Ltd パワーモジュールの繰返し耐久試験方法および試験装置
JP2007278910A (ja) * 2006-04-10 2007-10-25 Fuji Electric Device Technology Co Ltd 検査方法及び検査装置

Also Published As

Publication number Publication date
US9453872B2 (en) 2016-09-27
JP5829986B2 (ja) 2015-12-09
JP2014020892A (ja) 2014-02-03
US20140021973A1 (en) 2014-01-23
KR20140011471A (ko) 2014-01-28

Similar Documents

Publication Publication Date Title
KR101601363B1 (ko) 파워 사이클 시험을 위한 장치 및 방법
JP5731448B2 (ja) パワーサイクル試験装置
DK3224631T3 (en) Method for Determining Aging of Power Semiconductor Modules and Device and Circuit Device
US10288672B2 (en) Monitoring aging of power semiconductor devices based on case temperature
KR102712333B1 (ko) 파워모듈의 정션온도 측정 방법
JP6221408B2 (ja) 熱抵抗計測方法及び熱抵抗計測装置
JP2014020892A5 (https=)
JP6616699B2 (ja) 電力変換装置およびパワーモジュールの熱抵抗計測方法
JP2019502913A (ja) 半導体部品を備えるパワーエレクトロニクス機器の経年劣化を検出する方法及び装置、並びにパワーエレクトロニクスシステム
Avenas et al. Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions–Comparison with infrared measurements
CN119199443B (zh) 大电流开关状态下功率器件导通压降与结温关系整定方法
CN111505475B (zh) 一种功率半导体模块电热模型参数的标定方法及装置
Stella et al. Coordinated on-line junction temperature estimation and prognostic of SiC power modules
Race et al. Design for reliability of SiC multichip power modules: The effect of variability
Davis et al. Methodology and apparatus for rapid power cycle accumulation and in-situ incipient failure monitoring for power electronic modules
KR102842184B1 (ko) 전력반도체 소자의 온도 측정을 위한 시험장치 및 그 온도측정 시험방법
ten Have et al. An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress
KR20150003019A (ko) 반도체 소자의 온오프 시험 장치 및 그 방법
Sarkany et al. Effect of power cycling parameters on predicted IGBT lifetime
Yuan et al. Self-calibration for IGBT junction temperature measurement in power converter
JP2019015564A (ja) 熱抵抗測定装置及び熱抵抗測定方法
KR101480439B1 (ko) 반도체 접합부 온도의 측정이 가능한 시험방법 및 이를 응용한 파워사이클링 시 접합부 온도 제어 방법
Hernes et al. Improving monitoring of parallel ageing of IGBT bond-wires and solder layers by temperature compensation
Leung et al. Accelerated power cycling of gan hemts using switching loss and fast temperature measurement
CN121805062A (zh) 衬板焊层热疲劳检测方法、设备、存储介质和计算机程序

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20130708

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140520

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20130708

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20141107

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection
E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20151013

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160119

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160302

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160302

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190218

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190218

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20200129

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20200129

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210218

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20230216

Start annual number: 8

End annual number: 8