KR101592061B1 - 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 - Google Patents

플라즈마 프로세싱 챔버의 하부 전극 어셈블리 Download PDF

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Publication number
KR101592061B1
KR101592061B1 KR1020117010001A KR20117010001A KR101592061B1 KR 101592061 B1 KR101592061 B1 KR 101592061B1 KR 1020117010001 A KR1020117010001 A KR 1020117010001A KR 20117010001 A KR20117010001 A KR 20117010001A KR 101592061 B1 KR101592061 B1 KR 101592061B1
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South Korea
Prior art keywords
edge ring
gap
metal base
lower edge
support surface
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KR1020117010001A
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Korean (ko)
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KR20110081255A (ko
Inventor
제이슨 오거스티노
취안 차우
키스 윌리엄 가프
한 투옹 하
브렛 씨 리차드슨
하르미트 싱
Original Assignee
램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020117010001A 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 Active KR101592061B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19315108P 2008-10-31 2008-10-31
US61/193,151 2008-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157022860A Division KR101624123B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리

Publications (2)

Publication Number Publication Date
KR20110081255A KR20110081255A (ko) 2011-07-13
KR101592061B1 true KR101592061B1 (ko) 2016-02-04

Family

ID=42130005

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117010001A Active KR101592061B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
KR1020167013192A Active KR101701101B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
KR1020157022860A Active KR101624123B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020167013192A Active KR101701101B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
KR1020157022860A Active KR101624123B1 (ko) 2008-10-31 2009-10-29 플라즈마 프로세싱 챔버의 하부 전극 어셈블리

Country Status (7)

Country Link
US (1) US9412555B2 (enExample)
EP (1) EP2342951B1 (enExample)
JP (3) JP5743895B2 (enExample)
KR (3) KR101592061B1 (enExample)
CN (1) CN102187741B (enExample)
TW (1) TWI496511B (enExample)
WO (1) WO2010062345A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US8677586B2 (en) * 2012-04-04 2014-03-25 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
US9070536B2 (en) * 2012-04-24 2015-06-30 Applied Materials, Inc. Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9502279B2 (en) 2013-06-28 2016-11-22 Lam Research Corporation Installation fixture having a micro-grooved non-stick surface
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP2015115421A (ja) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP6540022B2 (ja) * 2014-12-26 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TWI613753B (zh) * 2015-02-16 2018-02-01 麥豐密封科技股份有限公司 靜電吸附承盤側壁之改良密封件
CN106711061B (zh) * 2015-11-18 2019-11-29 北京北方华创微电子装备有限公司 承载装置及反应腔室
JP6545613B2 (ja) * 2015-12-28 2019-07-17 クアーズテック株式会社 フォーカスリング
JP3210105U (ja) * 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
US10256003B2 (en) * 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
KR102251664B1 (ko) 2017-03-31 2021-05-14 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 플라즈마 처리 장치를 위한 페디스털 조립체
CN110462973B (zh) * 2017-04-07 2023-06-27 索尤若驱动有限及两合公司 用于制造用于感应式地将能量传输给可动对象的系统的方法以及用于实施所述方法的装置
KR102591660B1 (ko) * 2017-07-24 2023-10-19 램 리써치 코포레이션 이동가능한 에지 링 설계들
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
KR102652428B1 (ko) * 2017-12-15 2024-03-27 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP6859426B2 (ja) 2018-08-13 2021-04-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジリングの位置決めおよびセンタリング機構を組み込んだプラズマシース調整のための交換可能および／または折りたたみ式エッジリングアセンブリ
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
TWM602283U (zh) 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
JP7752172B2 (ja) 2020-10-05 2025-10-09 ラム リサーチ コーポレーション プラズマ処理システム用の可動エッジリング
CN112466740A (zh) * 2020-11-30 2021-03-09 上海诺硕电子科技有限公司 等离子体处理晶圆用载具及晶圆处理设备
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
US12469733B2 (en) 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
US20250079132A1 (en) * 2022-01-11 2025-03-06 Lam Research Corporation Plasma radical edge ring barrier seal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511175A (ja) * 2004-08-26 2008-04-10 ラム リサーチ コーポレーション プラズマチャンバ内部で使用するためのイットリア絶縁体リング

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH08316299A (ja) * 1995-03-14 1996-11-29 Souzou Kagaku:Kk 静電チャック
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2003152063A (ja) * 2001-11-09 2003-05-23 Applied Materials Inc 静電チャック及び半導体製造装置
US7882800B2 (en) * 2001-12-13 2011-02-08 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4082924B2 (ja) * 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP2004296553A (ja) * 2003-03-25 2004-10-21 Ngk Insulators Ltd 半導体製造装置用部材
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7338578B2 (en) * 2004-01-20 2008-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
US8007591B2 (en) * 2004-01-30 2011-08-30 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP4674512B2 (ja) 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511175A (ja) * 2004-08-26 2008-04-10 ラム リサーチ コーポレーション プラズマチャンバ内部で使用するためのイットリア絶縁体リング

Also Published As

Publication number Publication date
JP2012507860A (ja) 2012-03-29
KR20160063412A (ko) 2016-06-03
EP2342951A4 (en) 2015-10-28
JP5976875B2 (ja) 2016-08-24
KR20110081255A (ko) 2011-07-13
WO2010062345A3 (en) 2010-08-12
JP6385397B2 (ja) 2018-09-05
CN102187741A (zh) 2011-09-14
US9412555B2 (en) 2016-08-09
EP2342951B1 (en) 2019-03-06
KR101701101B1 (ko) 2017-01-31
US20100108261A1 (en) 2010-05-06
TW201031277A (en) 2010-08-16
WO2010062345A2 (en) 2010-06-03
JP2016219820A (ja) 2016-12-22
JP5743895B2 (ja) 2015-07-01
EP2342951A2 (en) 2011-07-13
KR20150102124A (ko) 2015-09-04
TWI496511B (zh) 2015-08-11
CN102187741B (zh) 2014-08-06
KR101624123B1 (ko) 2016-05-25
JP2015181174A (ja) 2015-10-15

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