KR101587200B1 - 반도체 합금을 증착하기 이전에 패터닝 비-균일성들을 감소시킴으로써 임계치 조정용 반도체 합금의 두께 변화들의 감소 - Google Patents

반도체 합금을 증착하기 이전에 패터닝 비-균일성들을 감소시킴으로써 임계치 조정용 반도체 합금의 두께 변화들의 감소 Download PDF

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KR101587200B1
KR101587200B1 KR1020117020213A KR20117020213A KR101587200B1 KR 101587200 B1 KR101587200 B1 KR 101587200B1 KR 1020117020213 A KR1020117020213 A KR 1020117020213A KR 20117020213 A KR20117020213 A KR 20117020213A KR 101587200 B1 KR101587200 B1 KR 101587200B1
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silicon
semiconductor region
mask layer
forming
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KR20110113647A (ko
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스테판 크론홀츠
안드레아스 나우만
군다 비르닌크
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020117020213A 2009-01-30 2010-01-27 반도체 합금을 증착하기 이전에 패터닝 비-균일성들을 감소시킴으로써 임계치 조정용 반도체 합금의 두께 변화들의 감소 Active KR101587200B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009006886.4 2009-01-30
DE102009006886A DE102009006886B4 (de) 2009-01-30 2009-01-30 Verringerung von Dickenschwankungen einer schwellwerteinstellenden Halbleiterlegierung durch Verringern der Strukturierungsungleichmäßigkeiten vor dem Abscheiden der Halbleiterlegierung
US12/693,227 US8361858B2 (en) 2009-01-30 2010-01-25 Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy
US12/693,227 2010-01-25

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KR20110113647A KR20110113647A (ko) 2011-10-17
KR101587200B1 true KR101587200B1 (ko) 2016-02-02

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US (2) US8361858B2 (enExample)
JP (1) JP5781944B2 (enExample)
KR (1) KR101587200B1 (enExample)
CN (1) CN102388451B (enExample)
DE (1) DE102009006886B4 (enExample)

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DE102009021484B4 (de) * 2009-05-15 2014-01-30 Globalfoundries Dresden Module One Llc & Co. Kg Höhere Gleichmäßigkeit einer Kanalhalbleiterlegierung durch Herstellen von STI-Strukturen nach dem Aufwachsprozess
DE102009046877B4 (de) 2009-06-30 2012-06-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Erhöhung der Selektivität während der Herstellung einer Kanalhalbleiterlegierung durch einen nassen Oxidationsprozess
DE102009055394B4 (de) * 2009-12-30 2012-06-14 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Halbleiterbauelement mit Erhöhung der Abscheidegleichmäßigkeit für eine Kanalhalbleiterlegierung durch Bilden einer Vertiefung vor der Wannenimplantation
DE102010028459B4 (de) * 2010-04-30 2018-01-11 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Reduzierte STI-Topographie in Metallgatetransistoren mit großem ε durch Verwendung einer Maske nach Abscheidung einer Kanalhalbleiterlegierung
DE102010040064B4 (de) * 2010-08-31 2012-04-05 Globalfoundries Inc. Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen
DE102010063296B4 (de) * 2010-12-16 2012-08-16 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Herstellungsverfahren mit reduzierter STI-Topograpie für Halbleiterbauelemente mit einer Kanalhalbleiterlegierung
DE102011005639B4 (de) 2011-03-16 2016-05-25 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Reduzieren der Defektrate während des Abscheidens einer Kanalhalbleiterlegierung in ein in-situ-abgesenktes aktives Gebiet
DE102011076695B4 (de) * 2011-05-30 2013-05-08 Globalfoundries Inc. Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist
US8508001B2 (en) 2011-08-25 2013-08-13 Globalfoundries Inc. Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same
US8377773B1 (en) 2011-10-31 2013-02-19 Globalfoundries Inc. Transistors having a channel semiconductor alloy formed in an early process stage based on a hard mask
KR102277398B1 (ko) * 2014-09-17 2021-07-16 삼성전자주식회사 반도체 소자 및 이의 제조 방법
KR102707542B1 (ko) * 2016-12-02 2024-09-20 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
US10141430B1 (en) * 2017-07-27 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fin structures with uniform threshold voltage distribution and method of making the same

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Also Published As

Publication number Publication date
CN102388451A (zh) 2012-03-21
DE102009006886A1 (de) 2010-08-19
CN102388451B (zh) 2015-07-15
JP5781944B2 (ja) 2015-09-24
JP2012516555A (ja) 2012-07-19
DE102009006886B4 (de) 2012-12-06
US8361858B2 (en) 2013-01-29
KR20110113647A (ko) 2011-10-17
US20100193881A1 (en) 2010-08-05
US20130161695A1 (en) 2013-06-27

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