KR101578760B1 - Light emitting device package, backlight unit, and illumination device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit and a lighting device for laterally guiding light emitted from a light emitting device. And a reflection member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device, wherein the reflection member includes a portion corresponding to a center portion of the upper surface of the light emitting device, The reflectance of the portion corresponding to the upper surface frame portion may be different from each other.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package, a backlight unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, and a lighting apparatus, and more particularly, to a light emitting device package, a backlight unit and a lighting apparatus for guiding light emitted from a light emitting device in a lateral direction.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, has a strong directivity of light, and can be driven at a low voltage. Further, such an LED is resistant to impact and vibration, does not require preheating time and complicated driving, can be packaged in various forms, can be modularized for various purposes, and can be applied to various lighting devices and display devices.

The direct-type light emitting device package widely used in the backlight unit can widely disperse light generated from the light emitting device package through the secondary lens so as to reduce the thickness of the unit and uniformly irradiate the light to the light guide plate.

However, in the conventional light emitting device package, the overall thickness (O / D: optical distance) of the product is increased due to the secondary lens, and luminance and color deviation are generated. Such luminance and color deviation degrade optical characteristics, There are many problems such as occurrence of phenomenon, Mura phenomenon, ring phenomenon and the like, the uniformity of the light irradiated to the light guide plate or the display panel is significantly lowered, and the product is defective. Particularly, these problems are mostly generated above the central portion of the light emitting element.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to reduce the thickness of a product by reflecting light generated in a central portion of a light emitting device more in a lateral direction, A backlight unit and a lighting device which can improve the light characteristics and produce a good quality product by preventing the phenomenon of light emission, However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a light emitting element; And a reflection member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device, wherein the reflection member includes a portion corresponding to a center portion of the upper surface of the light emitting device, The reflectance of the portion corresponding to the upper surface frame portion may be different from each other.

According to an aspect of the present invention, the reflective member may include: a first reflective portion provided at a portion corresponding to a central portion of an upper surface of the light emitting device, the first reflective portion having a first reflectivity; And a second reflector provided at a portion corresponding to an upper edge of the light emitting device and having a second reflectivity.

According to an aspect of the present invention, the first reflectivity of the first reflector may be larger than the second reflectivity of the second reflector.

According to an aspect of the present invention, the first reflective portion is a first encapsulant including a plurality of reflective grains having a first batch density, and the second reflective portion includes a plurality of reflective grains having a second batch density, As shown in FIG.

According to an aspect of the present invention, the first reflecting portion is a first reflecting plate including a plurality of openings having a first batch density, and the second reflecting portion includes a plurality of openings having a second batch density And may be a second reflector.

According to an aspect of the present invention, the first reflecting portion may be a first reflecting plate including an opening having a first diameter, and the second reflecting portion may be a second reflecting plate including an opening having a second diameter .

According to an aspect of the present invention, the first reflecting portion is a first reflecting layer including a plurality of reflecting units having a first batch density, and the second reflecting portion includes a plurality of reflecting units having a second batch density And the second reflective layer.

According to an aspect of the present invention, the first reflecting portion is a first reflecting layer including a reflecting unit having a first size, and the second reflecting portion is a second reflecting layer including a reflecting unit having a second size .

According to an aspect of the present invention, the first reflecting portion may be a reflecting portion of a first material, and the second reflecting portion may be a reflecting portion of a second material.

According to an aspect of the present invention, the reflection member may be one in which the reflection degree continuously varies from a portion corresponding to the center of the upper surface of the light emitting element to a portion corresponding to the upper surface of the light emitting element.

According to another aspect of the present invention, there is provided a backlight unit comprising: a substrate; A light emitting element mounted on the substrate; A reflective member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device; And a light guide plate installed in a path of light reflected by the reflection member, wherein the reflection member has a reflectivity of a portion corresponding to a center portion of an upper surface of the light emitting element and a reflectance of a portion corresponding to an upper surface frame portion of the light emitting element It can be different.

According to an aspect of the present invention, there is provided an illumination device including: a light emitting element; And a reflection member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device, wherein the reflection member includes a portion corresponding to a center portion of the upper surface of the light emitting device, The reflectance of the portion corresponding to the upper surface frame portion may be different from each other.

According to some embodiments of the present invention as described above, it is possible to reduce the thickness of the product, improve the optical characteristics of the product, prevent the product from being defective, and increase the light emitted from the central portion of the light- It has an effect of reflecting light. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view showing the light emitting device package of FIG.
3 is a plan view showing the light emitting device package of FIG.
4 is a plan view illustrating a light emitting device package according to some other embodiments of the present invention.
5 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
6 is a plan view showing the light emitting device package of FIG.
7 is a plan view showing a light emitting device package according to still another embodiment of the present invention.
8 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
9 is a plan view showing the light emitting device package of Fig.
10 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
11 is a plan view showing the light emitting device package of Fig.
12 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
13 is a plan view showing the light emitting device package of Fig.
14 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
15 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
16 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view illustrating a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view showing the light emitting device package 100 of FIG. 1, and FIG. 3 is a plan view showing the light emitting device package 100 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a light emitting device 20, and a reflective member 30 can do.

The substrate 10 can receive the light emitting device 20 and is electrically connected to the light emitting device 20. The substrate 10 may have appropriate mechanical strength and insulation property to support the light emitting device 20, Or a conductive material.

For example, the substrate 10 may include various wiring layers to connect the light emitting device 20 to an external power source, and may include a printed circuit board (PCB) having a plurality of epoxy resin sheets formed thereon, Lt; / RTI > The substrate 10 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, the substrate 10 may be a synthetic resin substrate such as a resin or a glass epoxy or a ceramic substrate in consideration of a thermal conductivity. In addition, the substrate 10 may be formed of an insulating material such as aluminum, copper, zinc, tin, A metal substrate such as silver can be applied, and a plate or a lead frame substrate can be applied.

The substrate 10 may be made of at least one selected from EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof to improve workability have.

In addition, although not shown in the figure, the wiring layer may be provided in the form of a conductive layer pattern. The wiring layer may be made of at least one selected from copper, aluminum, and combinations thereof, which are excellent in thermal conductivity and relatively inexpensive materials.

At this time, such a pattern forming method may be thermocompression processing, plating processing, adhesive processing, sputtering processing, other etching processing, printing processing, spray processing and the like.

In addition, the light emitting device 20 may be mounted on the substrate 10, and FIG. 1 illustrates a state in which one light emitting device 20 is mounted on the substrate 10.

In addition, a plurality of light emitting devices 20 may be mounted on the substrate 10.

The light emitting device 20 may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, and LEDs of ultraviolet light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The light emitting device 20 can be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Herein, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

The light emitting device 20 may be a flip chip type light emitting device having a first electrode pad B1 and a second electrode pad B2 formed on a lower surface thereof. In addition, the light emitting device 20 may have various signal transmission media such as bumps and solders. In addition, various types of light emitting devices such as vertical type and horizontal type having a signal transmission medium such as wire can be applied.

1 to 3, the reflection member 30 is installed on the upper surface 20a of the light emitting device 20 so as to guide light in a lateral direction of the light emitting device 20 . Here, the reflection member 30 may have a partially different reflection degree.

More specifically, for example, as shown in FIGS. 1 to 3, the reflection member 30 is provided at a portion corresponding to the central portion of the upper surface 20a of the light emitting device 20, And a second reflector 32 provided at a portion corresponding to a rim of the upper surface 20a of the light emitting device 20 and having a second reflectivity.

Here, the light generated at the central portion of the light emitting device 20 is more differently reflected in the lateral direction of the light emitting device 20 than the light generated at the edge of the light emitting device 20, and a small amount of light The first reflectivity of the first reflector 31 may be greater than the second reflectivity of the second reflector 32 so that only the second reflector 32 can pass through.

As such, various methods can be applied to the reflective member 30 to have partially different reflectivity.

For example, as shown in FIG. 2, the first reflecting portion 31 may be a first sealing material 31-1 including a plurality of reflecting grains R1 having a first batch density , And the second reflecting portion 32 may be a second sealing material 32-1 including a plurality of reflecting grains R2 having a second batch density. Here, the light emitted from the central portion of the light emitting device 20 may be reflected more significantly in the lateral direction of the light emitting device 20 than the light generated at the edge of the light emitting device 20, The batch density may be higher than the second batch density.

Therefore, the light reaching the first reflecting portion 31 can be reflected more by the relatively large amount of the reflecting grains R1, and the light reaching the second reflecting portion 32 can be relatively It can be reflected less by the small amount of the reflection grains R2. In addition, it is also possible to vary the reflectance of the aseismic reflector 31 and the reflectance of the second reflector 32 in two steps with different sizes of the reflection grains R1 and the reflection grains R2.

Here, the first encapsulant 31-1 and the second encapsulant 32-1 may be made of an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin, an epoxy modified silicone resin or the like (PPA), a polycarbonate resin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin, a polyimide resin composition, a modified polyimide resin composition, PBT resin and the like can be applied.

The reflection grains R1 and the reflection grains R2 may be any of titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, Chrome, a white-based or metal-based component, and the like. That is, as described above, the first encapsulant 31-1 and the second encapsulant 32-1 may be partially reflective or translucent encapsulant.

3, when the light emitting device 20 is a rectangular LED chip, the boundaries of the first and second reflecting portions 31 and 32 are formed in a concentric rectangle It may be a closed curve.

4 is a plan view illustrating a light emitting device package 200 according to some other embodiments of the present invention.

4, in the light emitting device package 200 according to some other embodiments of the present invention, when the light emitting device 20 is an LED chip in the shape of a rectangular plate, The boundary shape of the second reflecting portion 32 may be a circular closed curve having a concentric shape.

In addition, the boundary shape can be designed to be optimized to have various shapes such as a square, a circle, an ellipse, a polygon, a composite, and a geometric shape which are concentric or asymmetric depending on the shape of the LED chip, the light emission pattern, .

FIG. 5 is a cross-sectional view illustrating a light emitting device package 300 according to still another embodiment of the present invention, and FIG. 6 is a plan view showing the light emitting device package 300 of FIG.

5 and 6, the light emitting device package 300 according to still another embodiment of the present invention is provided between the first reflective portion 31 and the second reflective portion 32, And a third reflector 33 installed on the second reflector.

Accordingly, the light reaching the first reflecting portion 31 can be reflected relatively more, and the light reaching the third reflecting portion 33 can be reflected to a relatively medium degree, The light reaching the light source 32 may be relatively less reflected.

6, when the light emitting device 20 is a rectangular LED chip, the first reflector 31, the second reflector 32, and the third reflector (not shown) 33 may be concentric rectangular closed curves.

7 is a plan view illustrating a light emitting device package 400 according to some other embodiments of the present invention.

7, in the light emitting device package 400 according to some embodiments of the present invention, when the light emitting device 20 is an LED chip in the shape of a rectangular plate, the first reflector 31 and the second reflector The second reflector 32, and the third reflector 33 may be concentric circular closed lines.

In addition, the boundary shape can be designed to be optimized to have various shapes such as a square, a circle, an ellipse, a polygon, a composite, and a geometric shape which are concentric or asymmetric depending on the shape of the LED chip, the light emission pattern, .

As another method for partially reflecting the reflection member 30, a reflection plate, a reflective layer, a reflection unit, or the like made of metal such as aluminum, silver, gold, or copper can be used.

FIG. 8 is a cross-sectional view illustrating a light emitting device package 500 according to still another embodiment of the present invention, and FIG. 9 is a plan view showing the light emitting device package 500 of FIG.

8, the first reflecting portion 31 is a first reflecting plate 31-2 including a plurality of openings H1 having a first batch density, and the second reflecting portion 32 May be a second reflector 32-2 including a plurality of apertures H2 having a second arrangement density.

Here, the light emitted from the central portion of the light emitting device 20 may be reflected more significantly in the lateral direction of the light emitting device 20 than the light generated at the edge of the light emitting device 20, The batch density may be lower than the second batch density.

8, when the openings H1 and H2 are the same diameter, the lights reaching the first reflector 31 are relatively incident on the first reflector 31 having a relatively small opening H1, The light reflected by the first reflector 31-2 may be reflected more and the light reaching the second reflector 32 may be reflected by the second reflector 32-2 having a relatively larger aperture H2, Can be reflected. In addition, it is also possible to vary the reflectivity of the first reflector 31 and the second reflector 32 by varying the sizes of the openings H1 and H2.

10 is a cross-sectional view showing a light emitting device package 600 according to still another embodiment of the present invention, and FIG. 11 is a plan view showing the light emitting device package 600 of FIG.

10 and 11, the light emitting device package 600 according to still another embodiment of the present invention is characterized in that the first reflecting portion 31 has an opening (not shown) having a first diameter D1 And the second reflector 32 may be a second reflector 32-3 including an opening H2 having a second diameter D2, have.

Here, the light emitted from the central portion of the light emitting device 20 may be reflected more significantly in the lateral direction of the light emitting device 20 than the light generated at the edge of the light emitting device 20, The diameter D1 may be smaller than the second diameter D2.

10, the light reaching the first reflecting portion 31 is incident on the opening of the relatively small first diameter D1 (as shown in FIG. 10). Therefore, when the arrangement density of the openings H1 and H2 is the same, The light reflected by the first reflector 31-3 having the second diameter D2 may be reflected more and the light reaching the second reflector 32 may be reflected by the opening H2 of the second diameter D2, The second reflection plate 32-3 having the first reflection plate 32-3 and the second reflection plate 32-3.

FIG. 12 is a cross-sectional view illustrating a light emitting device package 700 according to still another embodiment of the present invention, and FIG. 13 is a plan view showing the light emitting device package 700 of FIG.

12 and 13, the light emitting device package 700 according to still another embodiment of the present invention is characterized in that the first reflective portion 31 is formed by a first arrangement of the first size S1 And the second reflecting portion 32 includes a plurality of reflecting units 32-1 to 32-4 having a second arrangement density of the second size S2, 4). ≪ / RTI >

Here, the light emitted from the central portion of the light emitting device 20 may be reflected more significantly in the lateral direction of the light emitting device 20 than the light generated at the edge of the light emitting device 20, The size S1 may be greater than the second size S2, and the first batch density may be greater than the second batch density.

12, the light reaching the first reflecting portion 31 is reflected by the reflecting unit 31-4 having a relatively large first size S1 and a large first batch density, And the light reaching the second reflecting portion 32 is reflected by the reflecting unit 32-4 of a relatively small second size S2 and a small second batch density It can be reflected less.

Here, the first size S1 and the second size S2 may be various concepts such as a diameter, a radius, a length, a width, an area, a width, and a volume.

14 is a cross-sectional view showing a light emitting device package 800 according to still another embodiment of the present invention.

14, in a light emitting device package 800 according to still another embodiment of the present invention, the first reflective portion 31 is a reflective portion 31-5 of the first material, The second reflecting portion 32 may be a reflecting portion 32-5 of the second material.

Here, the first reflector 31 and the second reflector 32 may be made of different materials having different reflectivities.

Therefore, in order to differentially reflect more light generated in the central portion of the light emitting device 20 in the lateral direction of the light emitting device 20 than light generated in the rim of the light emitting device 20, The first reflectivity of the reflector 31 may be greater than the second reflectivity of the second reflector 32. [

For example, the first reflector 31 may be formed of at least an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin, a modified silicone resin composition such as an epoxy modified silicone resin, a polyimide resin composition, (PPA), a polycarbonate resin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin, a PBT resin and combinations thereof .

The second reflector 32 may be formed of at least an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, an epoxy-modified silicone resin, or the like except for the material of the first reflector 31 (PPA), a polycarbonate resin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin , PBT resin, and combinations thereof.

15 is a cross-sectional view illustrating a light emitting device package 900 according to still another embodiment of the present invention.

15, the light emitting device package 900 according to still another embodiment of the present invention may be configured such that the reflective member 30 is arranged at a position corresponding to the center of the upper surface of the light emitting device 20, The reflectance may be continuously changed to a portion corresponding to the upper surface of the light emitting device 20.

Here, the reflection member 30 in which the reflectance is continuously changed can control the pressure, the temperature, the process time, and the like in the injection molding of the reflection member in a precise manner, or precisely adjust the numbers of the reflection grains, Or continuously formed.

16 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

16, a backlight unit 1000 according to some embodiments of the present invention includes a substrate 10, a light emitting device 20 that is seated on the substrate 10, A reflective member 30 provided on an upper surface 20a of the light emitting device 20 so as to guide light in a lateral direction of the reflective member 30 and a light guide plate 50 And a lens 60 that can be installed between the light emitting device 20 and the light guide plate 50. The reflective member 30 may have a partially different reflectivity.

Here, the substrate 10, the light emitting device 20, and the reflection member 30 are formed on the substrate 10 of the light emitting device package 100 described above and the light emitting device 20, May be the same as the member (30). Therefore, detailed description is omitted.

The backlight unit 1000 is installed on an LCD panel and projects light toward the LCD panel. The backlight unit 1000 is installed in a path of light generated by the light emitting device 20, The light can be transmitted over a larger area.

The light guide plate 50 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , Besides, materials of various translucent resin series can be applied. The light guide plate 50 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

The backlight unit 1000 according to some embodiments of the present invention may be a direct type backlight unit in which the light emitting device 20 is installed below the light guide plate 50. [

On the other hand, although not shown, a phosphor may be provided around the light emitting element 20. For example, such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

As a substitute for the phosphor, materials such as a quantum dot may be used. Alternatively, a fluorescent material and QD may be mixed with the LED or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the coating method of the fluorescent material or the quantum dot may include at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the material in a film form, a method of attaching a sheet form such as a film or a ceramic fluorescent material .

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

On the other hand, although not shown, the present invention can include a lighting device including the light emitting device packages described above. Here, the components of the illumination device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: substrate
20: Light emitting element
20a: upper surface
30: reflective member
B1: first electrode pad
B2: second electrode pad
31:
32:
33:
R1: reflection grains
R2: Reflection grains
31-1: First bag material
32-1: second bag material
H1: opening
H2: opening
31-2: First reflector
32-2: second reflector
D1: first diameter
D2: second diameter
31-3: First reflector
32-3: second reflector
S1: First size
S2: the second size
31-4: First reflective layer
32-4: Second reflective layer
31-5: reflection part of the first material
32-5: reflection part of the second material
50: light guide plate
1000: Backlight unit
100, 200, 300, 400, 500, 600, 700, 800, 900:

Claims (11)

A light emitting element; And
And a reflective member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device,
Wherein the reflective member comprises:
A first reflector provided at a portion corresponding to the center of the upper surface of the light emitting device and having a first reflectivity; And
And a second reflector provided at a portion corresponding to an upper edge of the light emitting device and having a second reflectivity,
The first reflectivity of the first reflector is greater than the second reflectivity of the second reflector,
The first reflecting portion is a first reflecting plate including a plurality of openings having a first batch density,
The second reflecting portion is a second reflecting plate including a plurality of openings having a second batch density,
Wherein the second batch density is greater than the first batch density. delete delete delete A light emitting element; And
And a reflective member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device,
Wherein the reflective member comprises:
A first reflector provided at a portion corresponding to the center of the upper surface of the light emitting device and having a first reflectivity; And
And a second reflector provided at a portion corresponding to an upper edge of the light emitting device and having a second reflectivity,
The first reflectivity of the first reflector is greater than the second reflectivity of the second reflector,
The first reflecting portion is a first reflecting plate including an opening having a first diameter,
The second reflecting portion is a second reflecting plate including an opening having a second diameter,
And the second diameter is larger than the first diameter. A light emitting element; And
And a reflective member provided on an upper surface of the light emitting device so as to guide light in a lateral direction of the light emitting device,
Wherein the reflective member comprises:
A first reflector provided at a portion corresponding to the center of the upper surface of the light emitting device and having a first reflectivity; And
And a second reflector provided at a portion corresponding to an upper edge of the light emitting device and having a second reflectivity,
The first reflectivity of the first reflector is greater than the second reflectivity of the second reflector,
Wherein the first reflecting portion is a first reflecting layer including a plurality of reflecting units having a first batch density,
The second reflecting portion is a second reflecting layer including a plurality of reflecting units having a second batch density,
The first reflecting portion is a first reflecting layer including a reflecting unit having a first size,
The second reflecting portion is a second reflecting layer including a reflecting unit having a second size,
Wherein the first size is greater than the second size and the first batch density is greater than the second batch density. delete delete delete 7. A light emitting device package according to any one of claims 1, 5, and 6; And
And a light guide plate installed in a path of the light reflected by the reflection member. 8. A lighting device comprising a light emitting device package according to any one of claims 1, 5 and 6.

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