KR101572830B1 - 비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템 - Google Patents

비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템 Download PDF

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KR101572830B1
KR101572830B1 KR1020090055397A KR20090055397A KR101572830B1 KR 101572830 B1 KR101572830 B1 KR 101572830B1 KR 1020090055397 A KR1020090055397 A KR 1020090055397A KR 20090055397 A KR20090055397 A KR 20090055397A KR 101572830 B1 KR101572830 B1 KR 101572830B1
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KR20100137128A (ko
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장준석
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삼성전자주식회사
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Priority to US12/780,978 priority patent/US8391062B2/en
Priority to JP2010140657A priority patent/JP5632210B2/ja
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Priority to US13/757,960 priority patent/US8681543B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020090055397A 2009-06-22 2009-06-22 비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템 Active KR101572830B1 (ko)

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Application Number Priority Date Filing Date Title
KR1020090055397A KR101572830B1 (ko) 2009-06-22 2009-06-22 비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템
US12/780,978 US8391062B2 (en) 2009-06-22 2010-05-17 Nonvolatile memory device and related method of programming
JP2010140657A JP5632210B2 (ja) 2009-06-22 2010-06-21 非揮発性メモリ装置及びそのプログラム方法
US13/757,960 US8681543B2 (en) 2009-06-22 2013-02-04 Nonvolatile memory device and related method of programming

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KR1020090055397A KR101572830B1 (ko) 2009-06-22 2009-06-22 비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템

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KR20100137128A KR20100137128A (ko) 2010-12-30
KR101572830B1 true KR101572830B1 (ko) 2015-11-30

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KR20170092959A (ko) * 2016-02-04 2017-08-14 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
US12592282B2 (en) 2023-02-09 2026-03-31 SK Hynix Inc. Memory device performing program operation and method of operating the same

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KR102930253B1 (ko) 2020-09-25 2026-02-25 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
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KR20170092959A (ko) * 2016-02-04 2017-08-14 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
KR102498248B1 (ko) 2016-02-04 2023-02-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
US12592282B2 (en) 2023-02-09 2026-03-31 SK Hynix Inc. Memory device performing program operation and method of operating the same

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JP2011003263A (ja) 2011-01-06
US20130141974A1 (en) 2013-06-06
US8681543B2 (en) 2014-03-25
JP5632210B2 (ja) 2014-11-26
US8391062B2 (en) 2013-03-05
KR20100137128A (ko) 2010-12-30
US20100321998A1 (en) 2010-12-23

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