KR101572490B1 - 하전 입자빔 묘화 장치 및 버퍼 메모리의 데이터 저장 방법 - Google Patents

하전 입자빔 묘화 장치 및 버퍼 메모리의 데이터 저장 방법 Download PDF

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KR101572490B1
KR101572490B1 KR1020140017905A KR20140017905A KR101572490B1 KR 101572490 B1 KR101572490 B1 KR 101572490B1 KR 1020140017905 A KR1020140017905 A KR 1020140017905A KR 20140017905 A KR20140017905 A KR 20140017905A KR 101572490 B1 KR101572490 B1 KR 101572490B1
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South Korea
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area
data
memory
file
data processing
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Korean (ko)
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KR20140103863A (ko
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준 야시마
야스오 카토
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0631—Configuration or reconfiguration of storage systems by allocating resources to storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/0644—Management of space entities, e.g. partitions, extents, pools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30416—Handling of data

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
KR1020140017905A 2013-02-18 2014-02-17 하전 입자빔 묘화 장치 및 버퍼 메모리의 데이터 저장 방법 Active KR101572490B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013028504A JP6110685B2 (ja) 2013-02-18 2013-02-18 荷電粒子ビーム描画装置、及びバッファメモリのデータ格納方法
JPJP-P-2013-028504 2013-02-18

Publications (2)

Publication Number Publication Date
KR20140103863A KR20140103863A (ko) 2014-08-27
KR101572490B1 true KR101572490B1 (ko) 2015-11-27

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ID=51352156

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140017905A Active KR101572490B1 (ko) 2013-02-18 2014-02-17 하전 입자빔 묘화 장치 및 버퍼 메모리의 데이터 저장 방법

Country Status (4)

Country Link
US (1) US9564293B2 (enExample)
JP (1) JP6110685B2 (enExample)
KR (1) KR101572490B1 (enExample)
TW (1) TWI503663B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6547635B2 (ja) 2016-01-08 2019-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6819475B2 (ja) * 2017-06-14 2021-01-27 株式会社ニューフレアテクノロジー データ処理方法、荷電粒子ビーム描画装置、及び荷電粒子ビーム描画システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011034510A (ja) * 2009-08-05 2011-02-17 Toshiba Corp メモリ割り当て装置およびメモリ割り当て方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534016A (en) * 1983-07-08 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Beam addressed memory system
JPS62154728A (ja) * 1985-12-27 1987-07-09 Hitachi Ltd 荷電粒子線描画装置
JPS6381819A (ja) * 1986-09-25 1988-04-12 Fujitsu Ltd 電子ビ−ム露光の制御方式
JP2553102B2 (ja) 1987-09-17 1996-11-13 富士通株式会社 電子ビーム露光装置
JPH07191199A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd 荷電粒子ビーム露光システム及び露光方法
JPH0983771A (ja) * 1995-09-19 1997-03-28 Fuji Xerox Co Ltd ファクシミリ装置
JP4410871B2 (ja) * 1999-03-25 2010-02-03 キヤノン株式会社 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2001168017A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び制御データの決定方法、該方法を適用したデバイスの製造方法。
JP4010537B2 (ja) 2002-02-21 2007-11-21 株式会社リコー 画像出力装置及び該装置の画像出力方法
JP4313145B2 (ja) * 2003-10-07 2009-08-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
JP4745089B2 (ja) * 2006-03-08 2011-08-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム
JP2008033838A (ja) * 2006-07-31 2008-02-14 Sanyo Electric Co Ltd メモリ管理装置及びメモリ管理方法
US20100180209A1 (en) * 2008-09-24 2010-07-15 Samsung Electronics Co., Ltd. Electronic device management method, and electronic device management system and host electronic device using the method
JP5586183B2 (ja) * 2009-07-15 2014-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011034510A (ja) * 2009-08-05 2011-02-17 Toshiba Corp メモリ割り当て装置およびメモリ割り当て方法

Also Published As

Publication number Publication date
JP2014157952A (ja) 2014-08-28
TW201443642A (zh) 2014-11-16
TWI503663B (zh) 2015-10-11
JP6110685B2 (ja) 2017-04-05
KR20140103863A (ko) 2014-08-27
US20140237196A1 (en) 2014-08-21
US9564293B2 (en) 2017-02-07

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