TWI503663B - A charged particle beam rendering device, and a buffer memory - Google Patents

A charged particle beam rendering device, and a buffer memory Download PDF

Info

Publication number
TWI503663B
TWI503663B TW103104262A TW103104262A TWI503663B TW I503663 B TWI503663 B TW I503663B TW 103104262 A TW103104262 A TW 103104262A TW 103104262 A TW103104262 A TW 103104262A TW I503663 B TWI503663 B TW I503663B
Authority
TW
Taiwan
Prior art keywords
data
area
memory
file
buffer memory
Prior art date
Application number
TW103104262A
Other languages
English (en)
Chinese (zh)
Other versions
TW201443642A (zh
Inventor
Jun Yashima
Yasuo Kato
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201443642A publication Critical patent/TW201443642A/zh
Application granted granted Critical
Publication of TWI503663B publication Critical patent/TWI503663B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0631—Configuration or reconfiguration of storage systems by allocating resources to storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/0644—Management of space entities, e.g. partitions, extents, pools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30416—Handling of data

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW103104262A 2013-02-18 2014-02-10 A charged particle beam rendering device, and a buffer memory TWI503663B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013028504A JP6110685B2 (ja) 2013-02-18 2013-02-18 荷電粒子ビーム描画装置、及びバッファメモリのデータ格納方法

Publications (2)

Publication Number Publication Date
TW201443642A TW201443642A (zh) 2014-11-16
TWI503663B true TWI503663B (zh) 2015-10-11

Family

ID=51352156

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103104262A TWI503663B (zh) 2013-02-18 2014-02-10 A charged particle beam rendering device, and a buffer memory

Country Status (4)

Country Link
US (1) US9564293B2 (enExample)
JP (1) JP6110685B2 (enExample)
KR (1) KR101572490B1 (enExample)
TW (1) TWI503663B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6547635B2 (ja) 2016-01-08 2019-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6819475B2 (ja) * 2017-06-14 2021-01-27 株式会社ニューフレアテクノロジー データ処理方法、荷電粒子ビーム描画装置、及び荷電粒子ビーム描画システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064807A (en) * 1993-12-27 2000-05-16 Fujitsu Limited Charged-particle beam exposure system and method
US6777697B2 (en) * 1999-03-25 2004-08-17 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus and device manufacturing method using the same
CN1607640A (zh) * 2003-10-07 2005-04-20 株式会社日立高新技术 带电粒子束描绘方法和带电粒子束描绘装置
US6903352B2 (en) * 1999-12-13 2005-06-07 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus, charged-particle beam exposure method, control data determination method, and device manufacturing method using this method
TW200731022A (en) * 2005-10-25 2007-08-16 Nuflare Technology Inc Beam dose computing method and writing method and record carrier body and writing apparatus
TW200739250A (en) * 2006-03-08 2007-10-16 Nuflare Technology Inc Writing method of charged particle beam, support apparatus of charged particle beam writing apparatus, writing data generating method and program-recorded readable recording medium

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534016A (en) * 1983-07-08 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Beam addressed memory system
JPS62154728A (ja) * 1985-12-27 1987-07-09 Hitachi Ltd 荷電粒子線描画装置
JPS6381819A (ja) * 1986-09-25 1988-04-12 Fujitsu Ltd 電子ビ−ム露光の制御方式
JP2553102B2 (ja) 1987-09-17 1996-11-13 富士通株式会社 電子ビーム露光装置
JPH0983771A (ja) * 1995-09-19 1997-03-28 Fuji Xerox Co Ltd ファクシミリ装置
JP4010537B2 (ja) 2002-02-21 2007-11-21 株式会社リコー 画像出力装置及び該装置の画像出力方法
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
JP2008033838A (ja) * 2006-07-31 2008-02-14 Sanyo Electric Co Ltd メモリ管理装置及びメモリ管理方法
US20100180209A1 (en) * 2008-09-24 2010-07-15 Samsung Electronics Co., Ltd. Electronic device management method, and electronic device management system and host electronic device using the method
JP5586183B2 (ja) * 2009-07-15 2014-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP5159721B2 (ja) * 2009-08-05 2013-03-13 株式会社東芝 メモリ割り当て装置およびメモリ割り当て方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064807A (en) * 1993-12-27 2000-05-16 Fujitsu Limited Charged-particle beam exposure system and method
US6777697B2 (en) * 1999-03-25 2004-08-17 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus and device manufacturing method using the same
US6903352B2 (en) * 1999-12-13 2005-06-07 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus, charged-particle beam exposure method, control data determination method, and device manufacturing method using this method
CN1607640A (zh) * 2003-10-07 2005-04-20 株式会社日立高新技术 带电粒子束描绘方法和带电粒子束描绘装置
TW200731022A (en) * 2005-10-25 2007-08-16 Nuflare Technology Inc Beam dose computing method and writing method and record carrier body and writing apparatus
TW200739250A (en) * 2006-03-08 2007-10-16 Nuflare Technology Inc Writing method of charged particle beam, support apparatus of charged particle beam writing apparatus, writing data generating method and program-recorded readable recording medium

Also Published As

Publication number Publication date
JP6110685B2 (ja) 2017-04-05
TW201443642A (zh) 2014-11-16
US9564293B2 (en) 2017-02-07
JP2014157952A (ja) 2014-08-28
KR101572490B1 (ko) 2015-11-27
US20140237196A1 (en) 2014-08-21
KR20140103863A (ko) 2014-08-27

Similar Documents

Publication Publication Date Title
JP5809419B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US7504645B2 (en) Method of forming pattern writing data by using charged particle beam
JP5601989B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US20120292537A1 (en) Charged particle beam writing apparatus and method of same
TWI587349B (zh) Charge particle beam mapping device and charged particle beam rendering method
JP2012253316A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5498106B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
KR101477557B1 (ko) 하전 입자빔 묘화 장치 및 다중 묘화용의 하전 입자빔의 조사 시간 배분 방법
TWI503663B (zh) A charged particle beam rendering device, and a buffer memory
KR101504530B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP5620725B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2015095538A (ja) 描画データの作成方法
JP6484491B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6567843B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101916707B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
US9659745B2 (en) Charged particle beam drawing apparatus, information processing apparatus and pattern inspection apparatus
JP5864334B2 (ja) 荷電粒子ビーム描画装置、パターン検査装置及びレイアウト表示方法
JP5586343B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6171062B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TW201734867A (zh) 資料處理方法、帶電粒子束描繪方法及帶電粒子束描繪裝置